SuperFET TM FCP11N60F/FCPF11N60F 600V N-Channel MOSFET Features Description * 650V @TJ = 150C SuperFETTM is, Fairchild's proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. * Typ. RDS(on) = 0.32 * Fast Recovery Type ( trr = 120ns) * Ultra Low Gate Charge (typ. Qg = 40nC) This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency. * Low Effective Output Capacitance (typ. Cosseff.=95pF) * 100% avalanche tested * RoHS Compliant D ! " ! " " " G! TO-220 G DS TO-220F GD S ! S Absolute Maximum Ratings Symbol ID Parameter Drain Current FCP11N60F FCPF11N60F Units - Continuous (TC = 25C) 11 11 * A - Continuous (TC = 100C) 7 7* A 33 33 * IDM Drain Current VGSS Gate-Source Voltage - Pulsed EAS Single Pulsed Avalanche Energy (Note 2) 340 mJ IAR Avalanche Current (Note 1) 11 A EAR Repetitive Avalanche Energy (Note 1) 12.5 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns PD Power Dissipation (TC = 25C) (Note 1) 30 - Derate above 25C TJ, TSTG Operating and Storage Temperature Range TL Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds A V 125 36 * W 1.0 0.29 * W/C -55 to +150 C 300 C * Drain current limited by maximum junction termperature. Thermal Characteristics Symbol Parameter FCP11N60F FCPF11N60F Units RJC Thermal Resistance, Junction-to-Case 1.0 3.5 C/W RCS Thermal Resistance, Case-to-Sink 0.5 -- C/W RJA Thermal Resistance, Junction-to-Ambient 62.5 62.5 C/W (c)2008 Fairchild Semiconductor Corporation FCP11N60F/FCPF11N60F Rev. A1 1 www.fairchildsemi.com FCP11N60F/FCPF11N60F 600V N-Channel MOSFET December 2008 Device Marking Device Package Reel Size Tape Width Quantity FCP11N60F FCP11N60F TO-220 -- -- 50 FCPF11N60F FCPF11N60F TO-220F -- -- 50 Electrical Characteristics Symbol TC = 25C unless otherwise noted Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 A, TJ = 25C 600 -- -- V VGS = 0 V, ID = 250 A, TJ = 150C -- 650 -- V BVDSS/ TJ Breakdown Voltage Temperature Coefficient ID = 250 A, Referenced to 25C -- 0.6 -- V/C BVDS Drain-Source Avalanche Breakdown Voltage VGS = 0 V, ID = 11 A -- 700 -- V IDSS Zero Gate Voltage Drain Current VDS = 600 V, VGS = 0 V -- -- 10 A VDS = 480 V, TC = 125C -- -- 100 A IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA 3.0 -- 5.0 V -- 0.32 0.38 -- 9.7 -- S On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 A RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 5.5 A gFS Forward Transconductance VDS = 40 V, ID = 5.5 A (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Coss Output Capacitance VDS = 480 V, VGS = 0 V, f = 1.0 MHz Coss eff. Effective Output Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 1148 1490 pF -- 671 870 pF -- 63 82 pF -- 35 -- pF VDS = 0V to 480 V, VGS = 0 V -- 95 -- pF VDD = 300 V, ID = 11 A, RG = 25 -- 34 80 ns -- 98 205 ns -- 119 250 ns -- 56 120 ns Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge (Note 4, 5) VDS = 480 V, ID = 11 A, VGS = 10 V (Note 4, 5) -- 40 52 nC -- 7.2 -- nC -- 21 -- nC 11 A Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 33 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 11 A -- -- 1.4 V trr Reverse Recovery Time 120 -- ns Reverse Recovery Charge VGS = 0 V, IS = 11 A, dIF / dt = 100 A/s -- Qrr -- 0.8 -- C (Note 4) Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. IAS = 5.5A, VDD = 50V, RG = 25 , Starting TJ = 25C 3. ISD 11A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating temperature 2 FCP11N60F/FCPF11N60F Rev. A1 www.fairchildsemi.com FCP11N60F/FCPF11N60F 600V N-Channel MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 2 10 VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V 1 10 1 ID , Drain Current [A] ID, Drain Current [A] Top : 0 10 * Notes : 1. 250 s Pulse Test o 2. TC = 25 C -1 10 o 150 C o o 25 C 0 10 -55 C * Note 1. VDS = 40V 2. 250 s Pulse Test 10 -1 -1 0 10 10 1 10 10 2 4 6 8 10 VGS , Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue IDR , Reverse Drain Current [A] RDS(ON) [], Drain-Source On-Resistance 1.0 0.8 VGS = 10V 0.6 VGS = 20V 0.4 0.2 1 10 0 10 o o 150 C 25 C * Notes : 1. VGS = 0V 2. 250 s Pulse Test o * Note : TJ = 25 C 0.0 -1 0 5 10 15 20 25 30 35 10 40 0.2 0.4 0.6 ID, Drain Current [A] Figure 5. Capacitance Characteristics 1.4 1.6 VDS = 100V VGS, Gate-Source Voltage [V] Capacitance [pF] 1.2 12 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 5000 4000 Coss 3000 1000 1.0 Figure 6. Gate Charge Characteristics 6000 2000 0.8 VSD , Source-Drain Voltage [V] * Notes : 1. VGS = 0 V 2. f = 1 MHz Ciss Crss VDS = 250V 10 VDS = 400V 8 6 4 2 * Note : ID = 11A 0 -1 10 0 0 10 1 0 10 3 FCP11N60F/FCPF11N60F Rev. A1 5 10 15 20 25 30 35 40 45 QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V] www.fairchildsemi.com FCP11N60F/FCPF11N60F 600V N-Channel MOSFET Typical Performance Characteristics FCP11N60F/FCPF11N60F 600V N-Channel MOSFET Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 1.1 1.0 * Notes : 1. VGS = 0 V 2. ID = 250 A 0.9 0.8 -100 -50 0 50 100 150 2.5 2.0 1.5 1.0 * Notes : 1. VGS = 10 V 2. ID = 5.5 A 0.5 0.0 -100 200 -50 0 o 2 100 us 1 ID, Drain Current [A] ID, Drain Current [A] 2 10 10 1 ms 10 ms DC 10 * Notes : o 1. TC = 25 C -1 10 200 Operation in This Area is Limited by R DS(on) 100 us 1 10 1 ms 10 ms 100 ms 0 10 DC * Notes : o 1. TC = 25 C -1 10 o o 2. TJ = 150 C 3. Single Pulse 2. TJ = 150 C 3. Single Pulse -2 10 150 Figure 9-2. Safe Operating Area for FCPF11N60F Operation in This Area is Limited by R DS(on) 0 100 TJ, Junction Temperature [ C] Figure 9-1. Safe Operating Area for FCP11N60F 10 50 o TJ, Junction Temperature [ C] -2 0 1 10 2 10 10 3 10 10 0 10 VDS, Drain-Source Voltage [V] 1 10 2 10 3 10 VDS, Drain-Source Voltage [V] Figure 10. Maximum Drain Current vs. Case Temperature 12.5 ID, Drain Current [A] 10.0 7.5 5.0 2.5 0.0 25 50 75 100 125 150 o TC, Case Temperature [ C] 4 FCP11N60F/FCPF11N60F Rev. A1 www.fairchildsemi.com FCP11N60F/FCPF11N60F 600V N-Channel MOSFET Typical Performance Characteristics (Continued) Figure 11-1. Transient Thermal Response Curve for FCP11N60F 10 0 ZJC(t), Thermal Response D = 0 .5 0 .2 * N o te s : o 1 . Z J C ( t) = 1 .0 C /W M a x . 2 . D u ty F a c to r, D = t 1 /t 2 3 . T J M - T C = P D M * Z J C (t) 0 .1 -1 10 0 .0 5 0 .0 2 0 .0 1 PDM s in g le p u ls e -2 10 t1 t2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a re W a v e P u ls e D u r a tio n [s e c ] Figure 11-2. Transient Thermal Response Curve for FCPF11N60F D = 0 .5 ZJC(t), Thermal Response 10 0 0 .2 0 .1 * N o te s : o 1 . Z J C ( t) = 3 .5 C /W M a x . 2 . D u ty F a c to r , D = t 1 /t 2 3 . T J M - T C = P D M * Z J C ( t) 0 .0 5 10 -1 0 .0 2 0 .0 1 PDM s in g le p u ls e 10 t1 -2 t2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a r e W a v e P u ls e D u r a t io n [s e c ] 5 FCP11N60F/FCPF11N60F Rev. A1 www.fairchildsemi.com FCP11N60F/FCPF11N60F 600V N-Channel MOSFET Gate Charge Test Circuit & Waveform VGS Same Type as DUT 50K Qg 200nF 12V 10V 300nF VDS VGS Qgs Qgd DUT 3mA Charge Resistive Switching Test Circuit & Waveforms VDS RL VDS 90% VDD VGS RG VGS DUT 10V 10% td(on) tr td(off) t on tf t off Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD L VDS BVDSS IAS ID RG VDD tp tp 6 FCP11N60F/FCPF11N60F Rev. A1 VDS (t) VDD DUT 10V ID (t) Time www.fairchildsemi.com FCP11N60F/FCPF11N60F 600V N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD * dv/dt controlled by RG * ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop 7 FCP11N60F/FCPF11N60F Rev. A1 www.fairchildsemi.com FCP11N60F/FCPF11N60F 600V N-Channel MOSFET Mechanical Dimensions TO - 220 Dimensions in Millimeters 8 FCP11N60F/FCPF11N60F Rev. A1 www.fairchildsemi.com 3.30 0.10 TO-220F 10.16 0.20 2.54 0.20 o3.18 0.10 (7.00) (1.00x45) 15.87 0.20 15.80 0.20 6.68 0.20 (0.70) 0.80 0.10 ) 0 (3 9.75 0.30 MAX1.47 #1 +0.10 0.50 -0.05 2.54TYP [2.54 0.20] 2.76 0.20 2.54TYP [2.54 0.20] 9.40 0.20 4.70 0.20 0.35 0.10 Dimensions in Millimeters 9 FCP11N60F/FCPF11N60F Rev. A1 www.fairchildsemi.com FCP11N60F/FCPF11N60F 600V N-Channel MOSFET Mechanical Dimensions (Continued) FRFET(R) Global Power ResourceSM Green FPSTM Green FPSTM e-SeriesTM GTOTM IntelliMAXTM ISOPLANARTM MegaBuckTM MICROCOUPLERTM MicroFETTM MicroPakTM MillerDriveTM MotionMaxTM Motion-SPMTM OPTOLOGIC(R) OPTOPLANAR(R) Build it NowTM CorePLUSTM CorePOWERTM CROSSVOLTTM CTLTM Current Transfer LogicTM EcoSPARK(R) EfficentMaxTM EZSWITCHTM * TM (R) tm Fairchild(R) Fairchild Semiconductor(R) FACT Quiet SeriesTM FACT(R) FAST(R) FastvCoreTM FlashWriter(R) * FPSTM F-PFSTM Programmable Active DroopTM QFET(R) QSTM Quiet SeriesTM RapidConfigureTM TM Saving our world, 1mW /W /kW at a timeTM SmartMaxTM SMART STARTTM SPM(R) STEALTHTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SupreMOSTM SyncFETTM (R) (R) tm PDP SPMTM Power-SPMTM PowerTrench(R) PowerXSTM tm TinyBoostTM TinyBuckTM TinyLogic(R) TINYOPTOTM TinyPowerTM TinyPWMTM TinyWireTM SerDesTM UHC(R) Ultra FRFETTM UniFETTM VCXTM VisualMaxTM XSTM The Power Franchise(R) * EZSWITCHTM and FlashWriter(R) are trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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