oi LINEAR SYSTEMS Linear Integrated Systems FEATURES LOW "psion) < 30 HIGH OFF-ISOLATION I, (off) <100pA HIGH SPEED t,,, <20nS PACKAGING OPTIONS AVAILABLE: : PLASTIC SOIC ABSOLUTE MAXIMUMRATINGS . 2S @ 25C (unless otherwise noted) ~ ee Reverse Gate to Drain or Source -40V TO-18 Gate Current 50mA (3 lead) Operating Junction Temperature 1.8W Storage Temperature -65C to +200C ELECTRICAL CHARACTERISTICS @ 25C (unless otherwise noted) _ SYMBOL CHARACTERISTICS 2N4391 2N4392 2N4393. -JUNITS] CONDITIONS MIN J MAX | MIN | MAX | MIN | MAX lass Gate Reverse Current -100 -100 100] pA | Vg.=-20V Vp5=0 -200 -200 -200] nA 150C BV uss Gate-Source Breakdown -40 ~40 -40 Vv Ig=1HA Vpg=0 lnxotf) Drain Cutoff Current 100 | pA | V,.=20V Vega OV 200 | nA 150C 100 pA Ves=-7V 200 nA 150C 100 pA Veg=12V 200 nA 150C Vesin Gate-Source Forward 1 1 1 Vv IgaimA Vpg=9 Vasiom | Gate-Source Cutoff 4 -10 | -2 [-5 0.5 | -3 Vos =20 |,=1nA logs Saturation Drain Current 50 150 | 25 175 5 30 mA ve =20 V_.=0 (NOTE 1) Vos on) Drain Source ON 04 q,V Ves=9 Ip=3mA 0.4 [p=6mA 0.4 Ij=t2ma Toscon) Static Drain-Source ON Resistance 30 60 1007 Q Ves=0 [p=imA devon) Drain-Source ON Resistance 30 60 100 Ves=0 [,=0 f=1kHz Css Common Source Input Capacitance 14 14 14 pF Vi.=20V Ves= ree Common Source Reverse Transfer 3.5 [| pF | Vp g=0 | Vag=-5V | f=1 KHz Capacitance 3.5 Vag2-7V 3.5 Vgg2712V taron) Turn-ON Delay Time 15 15 15 ns Vop=10V Vesion)=? L Rise Time 5 5 5 |,=(on) Vesiomn RL taomn Turn-OFF Delay Time 20 35 50 2N4391 12mA -12V ty Fall Time 15 20 30 2N4392 6 -7 2N4393_ 3 5 NOTE 1: Pulse test required, pulse width=300ps, duty cycle 3%. Linear Integrated Systems 3105. Milpitas Biva., Milpitas, CA 95035 TEL: (408) 263-8401 * FAX: (408) 263-7280