2N4125
PNP General Purpose Amplifier
2N4125
This device is designed for use as general purpose amplifiers
and switches requiring collector currents of 10 µA to 100 mA.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Value Units
VCEO Collec tor- Emitter Voltage 30 V
VCBO Coll ec tor- Base Volt age 30 V
VEBO Emit ter- Base Voltage 4.0 V
ICC ol lector Current - Cont inuous 200 m A
TJ, Tstg Oper at ing and S torage Juncti on Tem perature Range -55 to +150 °C
Symbol Characteristic Max Units
2N4125
PDTot al Device D issipation
Der ate above 25°C625
5.0 mW
mW/°C
RθJC Therm al Resi stance, Junct i on to Cas e 83.3 °C/W
RθJA Thermal Resi stance, J unct i on to A mbient 200 °C/W
CBETO-92
2001 Fairchild Semiconductor Corporation
2N4125, Rev A
2N4125
PNP General Purpose Amplifier
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
OFF CHARACTERISTICS
Sy mb ol Pa rameter Test Conditions Min Max Un its
V(BR)CEO Collec tor-Emitter Break down
Voltage* IC = 1.0 m A, IB = 0 30 V
V(BR)CBO Col lector- Base B reakdown Voltage IC = 10 µA, IE = 0 30 V
V(BR)EBO Emitt er -Base Breakdow n Voltage IE = 10 µA, IC = 0 4.0 V
ICBO Colle ct o r-C u toff Cur ren t VCB = 20 V, IE = 0 50 nA
IEBO Emitter-Cutoff Current VEB = 3.0 V, IC = 0 50 nA
ON CHARACTERISTICS*
hFE DC Current Gain VCE = 1.0 V, IC = 2. 0 mA
VCE = 1 .0 V, IC = 50 mA 50
25 150
VCE(sat)C oll ector- Emitter Saturation Voltage IC = 50 mA, IB = 5. 0 m A 0.4 V
VBE(sat)Base-Emitter Saturation Voltage IC = 50 mA , IB = 5. 0 m A 0.95 V
SMALL SIGNAL CHARACTERISTICS
Cob Output Capacitance VCB = 5.0 V, f = 100 kHz 4. 5 pF
Cib Input Capacitance VBE = 0.5 V, f = 100 kHz 10 pF
hfe Small-Signal Cur rent Gain IC = 2.0 m A, VCE = 10 V ,
f = 1.0 kH z
IC = 10 m A, VCE = 20 V ,
f = 100 MHz
50
2.0
200
NF Noise Figure VCE = 5.0 V, IC = 100 µA,
RS = 1.0 k Ω,
f = 10Hz to 15.7 kHz,
5.0 dB
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
2N4125
Typical Characteristics
Common-B ase Op en Circuit
Input and O ut put Capacit ance
vs Rever se Bias Vol tage
0.1 1 10
0
2
4
6
8
10
REVERSE BIAS VOLT AGE (V)
CAPACITANCE (pF)
Cobo
C
ibo
PNP General Purpose Amplifier
(continued)
Typi cal Pu lsed Cu rr en t Gain
vs Colle c t or Curre n t
0.1 0.2 0.5 1 2 5 10 20 50 100
50
100
150
200
250
I - COLLECTOR CURRENT (mA )
h - TYPICA L PULSED CURRENT GAIN
C
FE
125 ° C
25 ° C
- 40 °C
V = 1.0V
CE
Colle c t or- E mit te r Sat ura t ion
V olta ge vs Collector Current
110100200
0
0.05
0.1
0.15
0.2
0.25
0.3
I - COLLECTOR CURRE NT (mA)
V - COLLEC TOR EMITTE R VOLTAGE (V)
C
CESAT
25 °C
- 4 0 °C
125°C
β= 10
B ase-Emitter Sat uratio n
Vo lt ag e vs C o llector Cu rrent
110100200
0
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V - BA SE EMITTER VOLTAGE (V)
C
BESAT
β= 10
25 °C
- 40 °C
125 °C
Base Emitter ON Voltage vs
Collect or Curre nt
0.1 1 10 25
0
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRE NT (mA)
V - B ASE EMITTER ON VOLTA GE (V)
C
BE(ON)
V = 1V
CE
25 °C
- 4 0 °C
125 °C
C o ll ector -C uto ff Cu r rent
vs A mb ient Temperatu re
25 50 75 100 125
0.01
0.1
1
10
100
T - AM BIENT TEMP E RATURE ( C)
I - COLLE CTOR CURRENT (nA)
A
CBO
°
V = 25V
CB
Power Dissipation vs
Ambient Temperature
0 25 50 75 100 125 150
0
0.25
0.5
0.75
1
TEMPERATUR E ( C)
P - PO WER DISSIPATION (W )
D
o
SOT-223
SOT-23
TO-92
Typical Characteristics (continued)
Nois e Figur e vs Fre que ncy
0.1 1 10 100
0
1
2
3
4
5
6
f - FREQUENCY (kHz)
NF - NOIS E FIGURE ( d B)
I = 100 µA, R = 200Ω
C
V = 5.0V
CE
S
I = 100 µA, R = 2.0 kΩ
CS
I = 1.0 mA, R = 200Ω
CS
Nois e Figur e vs Source R e sis tan ce
0.1 1 10 100
0
2
4
6
8
10
12
R - SOURCE RESIS TAN CE ( )
NF - NOISE FIGURE (dB)
kΩ
I = 100 µA
C
V = 5.0V
f = 1.0 kHz
CE
I = 1.0 mA
C
S
Switching Times
vs Collec to r C urren t
1 10 100
1
10
100
500
I - COLLECTOR CURRENT (m A)
TIME (nS)
I = I = tr
t
s
B1
C
B2 Ic
10
tf
td
Tu rn On and Turn Off Tim es
vs Collector Current
1 10 100
1
10
100
500
I - COLL E CTOR CURR ENT ( mA )
TIME (nS)
I = I =
t
off
B1 B2 Ic
10
t
on
V = 0.5V
BE(OFF)
t I =
on
t
off
B1 Ic
10
2N4125
PNP General Purpose Amplifier
(continued)
2N4125
Typical Characteristics (continued)
PNP General Purpose Amplifier
(continued)
Input Impeda nce
0.1 1 10
0.1
1
10
I - COL LE CT OR CU RR ENT ( mA)
h - INPUT IMPEDANCE ( k )
V = 10 V
CE
C
ie
f = 1.0 kH z
Ω
Outp ut Admi tta n ce
0.1 1 10
10
100
1000
I - COL LECTOR CURRENT ( mA)
h - OUTPUT ADMITTANCE ( mhos)
V = 10 V
CE
C
oe
f = 1.0 kH z
µ
Cur rent Gain
0.1 1 10
10
20
50
100
200
500
1000
I - COLLECTOR CURRENT (mA)
h - CURRENT GAIN
V = 10 V
CE
C
fe
f = 1.0 kHz
Vol tage Feedback Ratio
0.1 1 10
1
10
100
I - COLLE CTOR CURRENT (mA)
h - VOLTAGE FEE DBACK RATIO (x10 )
C
re
_4
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Definition of Terms
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Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
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changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
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any time without notice in order to improve design.
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Formative or
In Design
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