MMSD301T1, MMSD701T1 Preferred Device SOD-123 Schottky Barrier Diodes The MMSD301T1, and MMSD701T1 devices are spin-offs of our popular MMBD301LT1, and MMBD701LT1 SOT-23 devices. They are designed for high-efficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital applications. http://onsemi.com Features * * * * 1 Cathode Extremely Low Minority Carrier Lifetime Very Low Capacitance Low Reverse Leakage Pb-Free Packages are Available 2 Anode SOD-123 CASE 425 STYLE 1 MAXIMUM RATINGS Rating Symbol Value Unit VR 30 70 Vdc Forward Current (DC) Continous IF 200 mA Forward Power Dissipation TA = 25C PF 225 mW Junction Temperature TJ -55 to +125 C Storage Temperature Range Tstg -55 to +150 C Reverse Voltage MMSD301T1 MMSD701T1 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. MARKING DIAGRAM 1 XXX MG G xx = Specific Device Code XT = MMSD301T1 XH = MMSD701T1 M = Date Code G = Pb-Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping MMSD301T1 SOD-123 3000 Tape & Reel MMSD301T1G SOD-123 (Pb-Free) 3000 Tape & Reel MMSD701T1 SOD-123 3000 Tape & Reel MMSD701T1G SOD-123 (Pb-Free) 3000 Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. (c) Semiconductor Components Industries, LLC, 2007 January, 2007 - Rev. 4 1 Publication Order Number: MMSD301T1/D MMSD301T1, MMSD701T1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Reverse Breakdown Voltage (IR = 10 mA) Diode Capacitance (VR = 0 V, f = 1.0 MHz Symbol Typ Max 30 70 - - - - - - 0.9 0.5 1.5 1.0 - - 0.9 0.5 1.5 1.0 - - 13 9.0 200 200 - - - - 0.38 0.52 0.42 0.7 0.45 0.6 0.5 1.0 V(BR)R MMSD301T1 MMSD701T1 MMSD301T1 MMSD701T1 Reverse Leakage (VR = 25 V) (VR = 35 V) MMSD301T1 MMSD701T1 Unit V CT MMSD301T1 MMSD701T1 Total Capacitance (VR = 15 V, f = 1.0 MHz) (VR = 20 V, f = 1.0 MHz) Forward Voltage (IF = 1.0 mAdc) (IF = 10 mA) (IF = 1.0 mAdc) (IF = 10 mA) Min pF CT pF IR VF MMSD301T1 MMSD701T1 http://onsemi.com 2 nAdc nAdc Vdc MMSD301T1, MMSD701T1 TYPICAL CHARACTERISTICS MMSD301T1 2.8 500 t , MINORITY CARRIER LIFETIME (ps) CT, TOTAL CAPACITANCE (pF) MMSD301T1 f = 1.0 MHz 2.4 2.0 1.6 1.2 0.8 0.4 0 0 3.0 6.0 18 9.0 12 15 21 VR, REVERSE VOLTAGE (VOLTS) 24 27 MMSD301T1 400 KRAKAUER METHOD 300 200 100 0 30 0 Figure 1. Total Capacitance 30 40 50 60 70 IF, FORWARD CURRENT (mA) 80 90 100 100 MMSD301T1 IF, FORWARD CURRENT (mA) MMSD301T1 IR, REVERSE LEAKAGE (m A) 20 Figure 2. Minority Carrier Lifetime 10 TA = 100C 1.0 TA = 75C 0.1 0 6.0 12 18 VR, REVERSE VOLTAGE (VOLTS) TA = -40C 10 TA = 85C 1.0 TA = 25C 0.01 0.001 10 24 0.1 30 TA = 25C 0.2 Figure 3. Reverse Leakage 0.4 0.6 0.8 VF, FORWARD VOLTAGE (VOLTS) Figure 4. Forward Voltage http://onsemi.com 3 1.0 1.2 MMSD301T1, MMSD701T1 TYPICAL CHARACTERISTICS MMSD701T1 2.0 500 t , MINORITY CARRIER LIFETIME (ps) CT, TOTAL CAPACITANCE (pF) MMSD701T1 f = 1.0 MHz 1.6 1.2 0.8 0.4 0 0 5.0 10 15 20 25 30 35 VR, REVERSE VOLTAGE (VOLTS) 40 45 MMSD701T1 400 KRAKAUER METHOD 300 200 100 0 50 0 10 Figure 5. Total Capacitance 30 40 50 60 70 IF, FORWARD CURRENT (mA) 80 90 100 Figure 6. Minority Carrier Lifetime 10 100 MMSD701T1 IF, FORWARD CURRENT (mA) MMSD701T1 IR, REVERSE LEAKAGE (m A) 20 TA = 100C 1.0 TA = 75C 0.1 10 TA = 85C TA = -40C 1.0 0.01 0.001 TA = 25C 0 10 20 30 VR, REVERSE VOLTAGE (VOLTS) 40 0.1 50 Figure 7. Reverse Leakage TA = 25C 0.2 0.4 0.8 1.2 VF, FORWARD VOLTAGE (VOLTS) Figure 8. Forward Voltage http://onsemi.com 4 1.6 2.0 MMSD301T1, MMSD701T1 PACKAGE DIMENSIONS SOD-123 CASE 425-04 ISSUE E D AAAA AAAA A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. A1 1 HE DIM A A1 b c D E HE L E L 2 MIN 0.037 0.000 0.020 --- 0.055 0.100 0.140 0.010 INCHES NOM 0.046 0.002 0.024 --- 0.063 0.106 0.145 --- MAX 0.053 0.004 0.028 0.006 0.071 0.112 0.152 --- STYLE 1: PIN 1. CATHODE 2. ANODE C b MILLIMETERS MIN NOM MAX 0.94 1.17 1.35 0.00 0.05 0.10 0.51 0.61 0.71 --- --- 0.15 1.40 1.60 1.80 2.54 2.69 2.84 3.56 3.68 3.86 --- --- 0.25 SOLDERING FOOTPRINT* EE EE EE 0.91 0.036 2.36 0.093 4.19 0.165 EE EE EE SCALE 10:1 1.22 0.048 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. 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