1.5KE6V8A/440A
1.5KE6V8CA/440CA
TRANSILTM
PEAKPULSEPOWER : 1500 W (10/1000µs)
BREAKDOWN VOLTAGE RANGE :
From6.8V to 440 V
UNIAND BIDIRECTIONALTYPES
LOWCLAMPINGFACTOR
FASTRESPONSETIME
UL RECOGNIZED
FEATURES
CB429
Symbol Parameter Value Unit
PPP Peakpulse powerdissipation(see note 1) Tj initial= Tamb 1500 W
P Powerdissipationon infiniteheatsink Tamb =75°C5W
I
FSM Non repetitivesurge peak forwardcurrent
for unidirectionaltypes tp= 10ms
Tj initial= Tamb 200 A
Tstg
TjStoragetemperaturerange
Maximum junctiontemperature - 65 to+ 175
175 °C
°C
TLMaximum leadtemperaturefor solderingduring 10s at5mm
fromcase 230 °C
Note 1 : For a surge greater than the maximum values, the diodewill failin short-circuit.
ABSOLUTEMAXIMUM RATINGS (Tamb =25°C)
DESCRIPTION
Transil diodes provide high overvoltageprotection
by clampingaction.Their instantaneousresponse
to transient overvoltages makes them particularly
suited to protect voltage sensitive devices such
as MOSTechnologyandlowvoltagesuppliedIC’s.
January 1998 Ed: 2
Symbol Parameter Value Unit
Rth (j-l) Junctionto leads 20 °C/W
Rth (j-a) Junctionto ambienton printedcircuit. Llead =10mm 75 °C/W
THERMAL RESISTANCES
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I
IF
VF
VVCL VBR
VRM
IPP
IRM V
Symbol Parameter
VRM Stand-offvoltage
VBR Breakdownvoltage
VCL Clamping voltage
IRM Leakagecurrent@ VRM
IPP Peak pulsecurrent
αT Voltagetemperaturecoefficient
VFForwardvoltagedrop
ELECTRICALCHARACTERISTICS(Tamb =25°C)
Types IRM @V
RM VBR @I
RV
CL @I
PP VCL @I
PP αTC
max min nom max max max max typ
note2 10/1000µs 8/20µs note3 note4
Unidirectional Bidirectional µA V V V V mA V A V A 10-4/°CpF
1.5KE6V8A 1.5KE6V8CA 1000 5.8 6.45 6.8 7.14 10 10.5 143 13.4 746 5.7 9500
1.5KE7V5A 1.5KE7V5CA 500 6.4 7.13 7.5 7.88 10 11.3 132 14.5 690 6.1 8500
1.5KE10A 1.5KE10CA 10 8.55 9.5 10 10.5 1 14.5 100 18.6 538 7.3 7000
1.5KE12A 1.5KE12CA 5 10.2 11.4 12 12.6 1 16.7 90 21.7 461 7.8 6000
1.5KE15A 1.5KE15CA 1 12.8 14.3 15 15.8 1 21.2 71 27.2 368 8.4 5000
1.5KE18A 1.5KE18CA 1 15.3 17.1 18 18.9 1 25.2 59.5 32.5 308 8.8 4300
1.5KE22A 1.5KE22CA 1 18.8 20.9 22 23.1 1 30.6 49 39.3 254 9.2 3700
1.5KE24A 1.5KE24CA 1 20.5 22.8 24 25.2 1 33.2 45 42.8 234 9.4 3500
1.5KE27A 1.5KE27CA 1 23.1 25.7 27 28.4 1 37.5 40 48.3 207 9.6 3200
1.5KE30A 1.5KE30CA 1 25.6 28.5 30 31.5 1 41.5 36 53.5 187 9.7 2900
1.5KE33A 1.5KE33CA 1 28.2 31.4 33 34.7 1 45.7 33 59.0 169 9.8 2700
1.5KE36A 1.5KE36CA 1 30.8 34.2 36 37.8 1 49.9 30 64.3 156 9.9 2500
1.5KE39A 1.5KE39CA 1 33.3 37.1 39 41.0 1 53.9 28 69.7 143 10.0 2400
1.5KE47A 1.5KE47CA 1 40.2 44.7 47 49.4 1 64.8 23.2 84 119 10.1 2050
1.5KE56A 1.5KE56CA 1 47.8 53.2 56 58.8 1 77 19.5 100 100 10.3 1800
1.5KE62A 1.5KE62CA 1 53.0 58.9 62 65.1 1 85 17.7 111 90 10.4 1700
1.5KE68A 1.5KE68CA 1 58.1 64.6 68 71.4 1 92 16.3 121 83 10.4 1550
1.5KE82A 1.5KE82CA 1 70.1 77.9 82 86.1 1 113 13.3 146 69 10.5 1350
1.5KE100A 1.5KE100CA 1 85.5 95.0 100 105 1 137 11 178 56 10.6 1150
1.5KE120A 1.5KE120CA 1 102 114 120 126 1 165 9.1 212 47 10.7 1000
1.5KE150A 1.5KE150CA 1 128 143 150 158 1 207 7.2 265 38 10.8 850
1.5KE180A 1.5KE180CA 1 154 171 180 189 1 246 6.1 317 31.5 10.8 725
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Types IRM @V
RM VBR @I
RV
CL @I
PP VCL @I
PP αTC
max min nom max max max max typ
note2 10/1000µs 8/20µs note3 note4
Unidirectional Bidirectional µA V V V V mA V A V A 10-4/°CpF
1.5KE200A 1.5KE200CA 1 171 190 200 210 1 274 5.5 353 28 10.8 675
1.5KE220A 1.5KE220CA 1 188 209 220 231 1 328 4.6 388 26 10.8 625
1.5KE250A 1.5KE250CA 1 213 237 250 263 1 344 5.0 442 23 11 560
1.5KE300A 1.5KE300CA 1 256 285 300 315 1 414 5.0 529 19 11 500
1.5KE350A 1.5KE350CA 1 299 332 350 368 1 482 4.0 618 16 11 430
1.5KE400A 1.5KE400CA 1 342 380 400 420 1 548 4.0 706 14 11 390
1.5KE440A 1.5KE440CA 1 376 418 440 462 1 603 3.5 776 13 11 360
Note 2 : Pulse test: tp<50 ms.
Note 3 :
∆VBR =αT*(Tamb - 25)*VBR(25°C).
Note 4 : VR= 0 V, F = 1 MHz. For bidirectional types,
capacitancevalue is dividedby 2.
Fig. 1: Peakpulse powerdissipationversus
initialjunction temperature (printedcircuitboard).
10 s
1000 s
%I
PP
50
0t
PULSE WAVEFORM 10/1000 s
100
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Fig. 2 : Peakpulse power versusexponentialpulse duration.
Fig.3 : Clamping voltageversus peak pulse current.
Exponentialwaveform: tp=20µs________
tp= 1ms-------------
tp= 10 ms...............
Note: The curvesof the figure3 arespecifiedfor a junctiontemperatureof 25°C beforesurge.
The given results maybe extrapolatedfor otherjunction temperaturesby usingthe following formula:
∆VBR =
αT*(Tamb -25)*VBR(25°C).
Forintermediatevoltages,extrapolatethe givenresults.
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Fig. 6 : Transient thermal impedance junction-
ambient versus pulse duration (For FR4 PC
Board with L lead = 10mm).
Fig. 5 : Peak forward voltage drop versus peak
forward current (typical values for unidirectional
types).
Note : Multiply by 2 for units with VBR > 220V.
Fig. 4b : Capacitance versus reverse applied
voltage for bidirectionaltypes (typical values).
Fig. 4a : Capacitance versus reverse applied
voltage for unidirectional types (typical values).
Fig.7 : Relative variation of leakagecurrent
versus junction temperature.
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Packaging: standardpackagingis in tapeand reel.
PACKAGEMECHANICAL DATA
CB429(Plastic)
ORDER CODE
1.5 KE 100 C A RL
PACKAGING:
= Ammopack tape
RL = Tape and reel.
REF. DIMENSIONS
Millimeters Inches
Min. Typ. Max. Min. Typ. Max.
A 9.45 9.50 9.80 0.372 0.374 0.386
B 26 1.024
∅C 4.90 5.00 5.10 0.193 0.197 0.201
∅D 0.94 1.00 1.06 0.037 0.039 0.042
L1 1.27 0.050
Note1 :TheleadisnotcontrolledwithinzoneL1
Weight= 0.85g.
1500 W
BREAKDOWNVOLTAGE
BIDIRECTIONAL
No suffix: Unidirectional
MARKING: Logo, DateCode,Type Code,CathodeBand (forunidirectionaltypesonly).
Information furnished is believedto be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the
consequences of use of such information nor for any infringementof patents or otherrights of third partieswhich may result from its use. No
license is grantedby implicationor otherwise under any patentor patentrights of SGS-THOMSON Microelectronics.Specifications mentioned
in this publication are subject to change withoutnotice. This publication supersedes and replacesall information previously supplied.
SGS-THOMSONMicroelectronics productsare not authorizedforuse as criticalcomponentsin life supportdevices or systems withoutexpress
writtenapproval of SGS-THOMSONMicroelectronics.
1998 SGS-THOMSON Microelectronics - Printed in Italy -All rights reserved.
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China -France - Germany -Italy - Japan - Korea- Malaysia- Malta- Morocco
The Netherlands - Singapore- Spain - Sweden - Switzerland - Taiwan -Thailand - United Kingdom -U.S.A.
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