HT-F195 Series Top View LED (Lead Frame type) Electrical / Optical Characteristics C O Features Package Outline Dimensions (Unit: mm Tolerance:+/-0.1) Part Number Chip LED ( 1.6x0.8x0.4 ) 0.40.08 1.1 1.6 LED Die I F ( mA ) Viewing Angle 2 _12 max. D P min. typ. HT-F195UYG Ultra Bright Yellow Green AllnGaP 2.0 2.4 573 574 20 36 60 20 140 HT-F195UY Ultra Bright Yellow AllnGaP 1.9 2.4 591 593 15 40 90 20 140 HT-F195UD Ultra Bright Amber AllnGaP 1.9 2.4 605 609 17 50 120 20 140 AllnGaP 1.9 2.4 622 636 17 50 120 20 140 HT-F195USD Ultra Bright Orange 0.4 Polarity Resin Directive Characteristics 0 -30 Forward Voltage(VF) Wavelength (nm) typ. Luminous Intensity (mcd)* Cathode side (0.6) Lead frame Material typ. Super compact 0.8 Emitting color HT-F195NB Blue InGaN 3.3 3.9 470 468 40 36 90 20 140 HT-F195NG Green lnGaN 3.3 3.9 527 520 40 90 160 20 140 HT-F195TW White lnGaN 3.3 3.9 x=0.29 y=0.31 - - 140 250 20 140 HT-F195NB5 Blue InGaN 2.8 3.15 472 470 40 14 30 5 140 HT-F195NG5 Green lnGaN 2.8 3.15 529 522 40 25 50 5 140 HT-F195TW5 White lnGaN 2.8 3.15 x=0.29 y=0.32 - - 36 90 5 140 30 -60 60 *Per NIST standards Recommended Soldering Pattern 100% 50% 0 50% (Unit:mm) 100% It's not recommended this area has any print. 0 -30 Forward Current vs. Forward Voltage Relative Intensity vs. Forward Current Forward Current vs. Forward Voltage Relative Intensity vs. Forward Current 150 30 150 30 30 0.8 100% 50% 0 50% 60 12 UYG 0 0 6 12 18 24 60 NG/NB 18 NG 12 NB 6 1.7 InGaN 72 117 Unit mW 0 2.5 6 12 18 24 30 2.0 Forward Current vs. Forward Voltage 2.4 2.8 3.2 3.6 4.0 Forward Voltage (VF) Forward Current(mA) Forward Current vs. Ambient Temperature 35 AlInGaP/AlGaAs 90 30 200 Forward Current (mA) PD AllnGaP 2.3 100 250 Relative Intensity (%) Symbol C 2.1 Forward Voltage (VF) Relative Intensity vs. Forward Current o 1.9 150 100 50 80 Forward Current (mA) Absolute Maximum Ratings 0 0 1.5 30 Forward Current(mA) Power Dissipation 90 24 100% 0 Item 120 30 6 30 0.8 18 Forward Current (mA) 90 24 Relative Intensity (%) 60 Forward Current (mA) -60 Relative Intensity (%) 0.8 UY/UD/USD 120 70 60 50 40 30 20 GaP/GaAsP 25 InGaN 20 15 10 5 DC Forward Current IF 30 30 mA 10 0 0 0 Pulsed Forward Current I FP* Reverse Voltage VR 5 Operating Temperature T OP -30 to 80 Storage Temperature T ST -40 to 85 120 120 mA 20 40 Forward Current (mA) 60 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Forward Voltage (VF) 4.0 4.5 5.0 0 10 20 30 40 50 60 70 80 90 100 Ambient Temperature (OC) V o C o C * 0.1msec pulse, 10% duty cycle. 54 55 HT-F195 Series Top View LED (Lead Frame type) Electrical / Optical Characteristics C O Features Package Outline Dimensions (Unit: mm Tolerance:+/-0.1) Part Number Chip LED ( 1.6x0.8x0.4 ) 0.40.08 1.1 1.6 LED Die I F ( mA ) Viewing Angle 2 _12 max. D P min. typ. HT-F195UYG Ultra Bright Yellow Green AllnGaP 2.0 2.4 573 574 20 36 60 20 140 HT-F195UY Ultra Bright Yellow AllnGaP 1.9 2.4 591 593 15 40 90 20 140 HT-F195UD Ultra Bright Amber AllnGaP 1.9 2.4 605 609 17 50 120 20 140 AllnGaP 1.9 2.4 622 636 17 50 120 20 140 HT-F195USD Ultra Bright Orange 0.4 Polarity Resin Directive Characteristics 0 -30 Forward Voltage(VF) Wavelength (nm) typ. Luminous Intensity (mcd)* Cathode side (0.6) Lead frame Material typ. Super compact 0.8 Emitting color HT-F195NB Blue InGaN 3.3 3.9 470 468 40 36 90 20 140 HT-F195NG Green lnGaN 3.3 3.9 527 520 40 90 160 20 140 HT-F195TW White lnGaN 3.3 3.9 x=0.29 y=0.31 - - 140 250 20 140 HT-F195NB5 Blue InGaN 2.8 3.15 472 470 40 14 30 5 140 HT-F195NG5 Green lnGaN 2.8 3.15 529 522 40 25 50 5 140 HT-F195TW5 White lnGaN 2.8 3.15 x=0.29 y=0.32 - - 36 90 5 140 30 -60 60 *Per NIST standards Recommended Soldering Pattern 100% 50% 0 50% (Unit:mm) 100% It's not recommended this area has any print. 0 -30 Forward Current vs. Forward Voltage Relative Intensity vs. Forward Current Forward Current vs. Forward Voltage Relative Intensity vs. Forward Current 150 30 150 30 30 0.8 100% 50% 0 50% 60 12 UYG 0 0 6 12 18 24 60 NG/NB 18 NG 12 NB 6 1.7 InGaN 72 117 Unit mW 0 2.5 6 12 18 24 30 2.0 Forward Current vs. Forward Voltage 2.4 2.8 3.2 3.6 4.0 Forward Voltage (VF) Forward Current(mA) Forward Current vs. Ambient Temperature 35 AlInGaP/AlGaAs 90 30 200 Forward Current (mA) PD AllnGaP 2.3 100 250 Relative Intensity (%) Symbol C 2.1 Forward Voltage (VF) Relative Intensity vs. Forward Current o 1.9 150 100 50 80 Forward Current (mA) Absolute Maximum Ratings 0 0 1.5 30 Forward Current(mA) Power Dissipation 90 24 100% 0 Item 120 30 6 30 0.8 18 Forward Current (mA) 90 24 Relative Intensity (%) 60 Forward Current (mA) -60 Relative Intensity (%) 0.8 UY/UD/USD 120 70 60 50 40 30 20 GaP/GaAsP 25 InGaN 20 15 10 5 DC Forward Current IF 30 30 mA 10 0 0 0 Pulsed Forward Current I FP* Reverse Voltage VR 5 Operating Temperature T OP -30 to 80 Storage Temperature T ST -40 to 85 120 120 mA 20 40 Forward Current (mA) 60 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Forward Voltage (VF) 4.0 4.5 5.0 0 10 20 30 40 50 60 70 80 90 100 Ambient Temperature (OC) V o C o C * 0.1msec pulse, 10% duty cycle. 54 55