TLP187 Photocouplers InGaAs Infrared LED & Photo Transistor TLP187 1. Applications * Programmable Logic Controllers (PLCs) * I/O Interface Boards * Home Electric Appliances 2. General TLP187 is a photocoupler that consist of a InGaAs infrared light-emitting diode optically coupled to a darlington transistor. Housed in a SO6 package, it has a high noise immunity and a high insulation. With the high breakdown voltage between the collector and emitter, TLP187 is suitable in applications such as 100 VDC output modules of programmable controllers. 3. Features (1) Collector-emitter voltage: 300 V (min) (2) Current transfer ratio: 1000 % (min) (3) Isolation voltage: 3750 Vrms (min) (4) Operation temperature range:-55 to 110 (5) Safety standards UL-approved: UL1577, File No.E67349 cUL-approved: CSA Component Acceptance Service No.5A File No.E67349 VDE-approved: EN60747-5-5, EN60065 or EN60950-1 (Note 1) : EN62368-1 (Pending) (Note 1) CQC-approved: GB4943.1, GB8898 Japan and Thailand Factory Note 1: When a VDE approved type is needed, please designate the Option (V4) (V4). 4. Packaging and Pin Configuration 1: Anode 3: Cathode 4: Emitter 6: Collector 11-4M1S Start of commercial production (c)2015-2018 Toshiba Electronic Devices & Storage Corporation 1 2012-10 2018-01-30 Rev.4.0 TLP187 5. Principle of Operation 5.1. Mechanical Parameters Characteristics Min Unit Creepage distances 5.0 mm Clearance 5.0 Internal isolation thickness 0.4 6. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics LED Symbol Input forward current Input forward current derating Note IF (Ta 90 ) IF/Ta Unit 50 mA -1.43 mA/ 1 A Input forward current (pulsed) IFP Input reverse voltage VR 5 V Input power dissipation PD 100 mW PD/Ta -2.86 mW/ Input power dissipation derating (Ta 90 ) Junction temperature (Note 1) Rating Tj 125 Detector Collector-emitter voltage VCEO 300 V Emitter-collector voltage VECO 0.3 IC 150 Collector current Collector power dissipation Collector power dissipation derating (Ta 25 ) Junction temperature Common Operating temperature Storage temperature Lead soldering temperature (10 s) Total power dissipation Isolation voltage AC, 60 s, R.H. 60 % mA PC 150 mW PC/Ta -1.5 mW/ Tj 125 Topr -55 to 110 Tstg -55 to 125 Tsol 260 PT 200 mW 3750 Vrms BVS (Note 2) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Pulse width (PW) 100 s, f = 1000 Hz Note 2: This device is considered as a two-terminal device: Pins 1 and 3 are shorted together, and pins 4 and 6 are shorted together. (c)2015-2018 Toshiba Electronic Devices & Storage Corporation 2 2018-01-30 Rev.4.0 TLP187 7. Electrical Characteristics (Unless otherwise specified, Ta = 25 ) Characteristics LED Symbol Note Test Condition Min Typ. Max Unit Input forward voltage VF IF = 10 mA 1.1 1.25 1.4 V Input reverse current IR VR = 5 V 10 A V = 0 V, f = 1 MHz Input capacitance Ct 30 pF Detector Collector-emitter breakdown voltage V(BR)CEO IC = 0.1 mA 300 V Emitter-collector breakdown voltage V(BR)ECO IE = 0.1 mA 0.3 Dark Current IDARK VCE = 200 V 0.01 0.2 VCE = 200 V, Ta = 85 20 Collector-emitter capacitance CCE V = 0 V, f = 1 MHz 12 pF A 8. Coupled Electrical Characteristics (Unless otherwise specified, Ta = 25 ) Characteristics Current transfer ratio Symbol Note Test Condition Min Typ. Max Unit % IC/IF IF = 1 mA, VCE = 1 V 1000 4000 Saturated current transfer ratio IC/IF(sat) IF = 10 mA, VCE = 1 V 500 Collector-emitter saturation voltage VCE(sat) IC = 10 mA, IF = 1 mA 1.0 IC = 100 mA, IF = 10 mA 0.3 1.2 OFF-state collector current IC(off) VF = 0.7 V, VCE = 200 V 20 A Min Typ. Max Unit 0.8 pF 1 x 1012 1014 Vrms V 9. Isolation Characteristics (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Note Test Conditions Total capacitance (input to output) CS (Note 1) VS = 0 V, f = 1 MHz Isolation resistance RS (Note 1) VS = 500 V, R.H. 60 % Isolation voltage BVS (Note 1) AC, 60 s 3750 AC, 1s in oil 10000 DC, 60 s in oil 10000 Vdc Note 1: This device is considered as a two-terminal device: Pins 1 and 3 are shorted together, and pins 4 and 6 are shorted together. 10. Switching Characteristics (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Rise time tr Fall time tf Note Test Condition VCC = 10 V, IC = 10 mA, RL = 100 Min Typ. Max Unit 40 s 15 Turn-on time ton 50 Turn-off time toff 15 Turn-on time ton 5 Storage time ts 40 Turn-off time toff 80 See Figure 10.1 RL = 180 , VCC = 10 V, IF = 16 mA Fig. 10.1 Switching Time Test Circuit and Waveform (c)2015-2018 Toshiba Electronic Devices & Storage Corporation 3 2018-01-30 Rev.4.0 TLP187 11. Characteristics Curves (Note) Fig. 11.1 IF - Ta Fig. 11.2 PC - Ta Fig. 11.3 IFP - DR Fig. 11.4 IF - VF Fig. 11.5 VF/Ta - IF Fig. 11.6 IFP - VFP (c)2015-2018 Toshiba Electronic Devices & Storage Corporation 4 2018-01-30 Rev.4.0 TLP187 Fig. 11.7 IC - VCEO Fig. 11.8 IC - IF Fig. 11.9 IDARK - Ta Fig. 11.10 IC/IF - IF Fig. 11.11 VCE(sat) - Ta (c)2015-2018 Toshiba Electronic Devices & Storage Corporation Fig. 11.12 IC - Ta 5 2018-01-30 Rev.4.0 TLP187 Fig. 11.13 Switching Time - RL Note: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. (c)2015-2018 Toshiba Electronic Devices & Storage Corporation 6 2018-01-30 Rev.4.0 TLP187 12. Soldering and Storage 12.1. Precautions for Soldering The soldering temperature should be controlled as closely as possible to the conditions shown below, irrespective of whether a soldering iron or a reflow soldering method is used. * When using soldering reflow. The soldering temperature profile is based on the package surface temperature. (See the figure shown below, which is based on the package surface temperature.) Reflow soldering must be performed once or twice. The mounting should be completed with the interval from the first to the last mountings being 2 weeks. Fig. 12.1.1 An Example of a Temperature Profile When Lead(Pb)-Free Solder Is Used * When using soldering flow Preheat the device at a temperature of 150 (package surface temperature) for 60 to 120 seconds. Mounting condition of 260 within 10 seconds is recommended. Flow soldering must be performed once. * When using soldering Iron Complete soldering within 10 seconds for lead temperature not exceeding 260 or within 3 seconds not exceeding 350 Heating by soldering iron must be done only once per lead. 12.2. Precautions for General Storage * Avoid storage locations where devices may be exposed to moisture or direct sunlight. * Follow the precautions printed on the packing label of the device for transportation and storage. * Keep the storage location temperature and humidity within a range of 5 to 35 and 45 % to 75 %, respectively. * Do not store the products in locations with poisonous gases (especially corrosive gases) or in dusty conditions. * Store the products in locations with minimal temperature fluctuations. Rapid temperature changes during storage can cause condensation, resulting in lead oxidation or corrosion, which will deteriorate the solderability of the leads. * When restoring devices after removal from their packing, use anti-static containers. * Do not allow loads to be applied directly to devices while they are in storage. * If devices have been stored for more than two years under normal storage conditions, it is recommended that you check the leads for ease of soldering prior to use. (c)2015-2018 Toshiba Electronic Devices & Storage Corporation 7 2018-01-30 Rev.4.0 TLP187 Package Dimensions Unit: mm Weight: 0.08 g (typ.) Package Name(s) TOSHIBA: 11-4M1S (c)2015-2018 Toshiba Electronic Devices & Storage Corporation 8 2018-01-30 Rev.4.0 TLP187 RESTRICTIONS ON PRODUCT USE Toshiba Corporation and its subsidiaries and affiliates are collectively referred to as "TOSHIBA". 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Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA ASSUMES NO LIABILITY FOR DAMAGES OR LOSSES OCCURRING AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS. (c)2015-2018 Toshiba Electronic Devices & Storage Corporation 9 2018-01-30 Rev.4.0