2SC2290A
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE
2SC2290A
2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS
(LOW SUPPLY VOLTAGE USE)
z Specified 12.5V, 28MHz Characteristics
z Output Power : Po = 60WPEP (Min.)
z Power Gain : Gp = 11.8dB (Min.)
z Collector Efficiency : ηC = 35% (Min.)
z Intermodulation Distortion : IMD = −30dB (Max.)
MAXIMUM RATINGS (Tc = 25°C)
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO 45 V
Collector-Emitter Voltage VCES 45 V
Collector-Emitter Voltage VCEO 18 V
Emitter-Base Voltage VEBO 4 V
Collector Current IC20 A
Collector Power Dissipation PC175 W
Junction Temperature Tj175 °C
Storage Temperature Range Tstg −65~175 °C
JEDEC —
EIAJ —
TOSHIBA 2−13B1A
Weight: 5.2g
Unit in mm
MARKING
Dot
Lot No.
2SC2290
JAPAN
TOSHIB
A
1 2005-03-09
2SC2290A
ELECTRICAL CHARACTERISTICS (Tc = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector-Emitter Breakdown Voltage V (BR) CEO IC = 100mA, IB = 0 18 — — V
Collector-Emitter Breakdown Voltage V (BR) CES IC = 100mA, VEB = 0 45 — — V
Emitter-Base Breakdown Voltage V (BR) EBO IE = 1mA, IC = 0 4 — — V
DC Current Gain hFE VCE = 5V, IC = 10A * 10 — 150 —
Collector Output Capacitance Cob VCB = 12.5V, IE = 0
f = 1MHz — — 500 pF
Power Gain Gp11.8 13.8 — dB
Input Power Pi— 2.5 4 WPEP
Collector Efficiency ηC35 — — %
Intermodulation Distortion IMD
VCC = 12.5V, f1 = 28.000MHz,
f2 = 28.001MHz
Iidle = 50mA
Po = 60WPEP (Fig.)
— — −30 dB
Series Equivalent Input Impedance Zin — 1.02
−j0.17 — Ω
Series Equivalent Output Impedance Zout
VCC = 12.5V, f1 = 28.000MHz,
f2 = 28.001MHz
Po = 60WPEP — 0.86
−j0.21 — Ω
* Pulse Test: Pulse Width ≤ 100µs, Duty Cycle ≤ 3%
RESTRICTIONS ON P RODUCT USE 030619EAA
• The information contained herein is subject to change without notice.
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The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of
TOSHIBA or others.
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced
and sold, under any law and regulations.
2 2005-03-09
2SC2290A
Fig. Pi TEST CIRCUIT
CAUTION
These are only typical curves and devices are not necessarily guaranteed at these curves.
3 2005-03-09