110A
PHASE CONTROL THYRISTORS Stud Version
ST110S SERIES
1
Bulletin I25167 rev. B 01/94
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Features
Center gate
Hermetic metal case with ceramic insulator
(Also available with glass-metal seal up to 1200V)
International standard case TO-209AC (TO-94)
Threaded studs UNF 1/2 - 20UNF2A
Compression Bonded Encapsulation for heavy duty
operations such as severe thermal cycling
Typical Applications
DC motor controls
Controlled DC power supplies
AC controllers
IT(AV) 110 A
@ TC90 °C
IT(RMS) 175 A
ITSM @ 50Hz 2700 A
@ 60Hz 2830 A
I2t@
50Hz 36.4 KA2s
@ 60Hz 33.2 KA2s
VDRM/VRRM 400 to 1600 V
tqtypical 100 µs
TJ- 40 to 125 °C
Parameters ST110S Units
Major Ratings and Characteristics
case style
TO-209AC (TO-94)
ST110S Series
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Bulletin I25167 rev. B 01/94
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage V DRM/VRRM, max. repetitive VRSM , maximum non- IDRM/IRRM max.
Type number Code peak and off-state voltage repetitive peak voltage @ TJ = TJ max
VVmA
04 400 500
08 800 900
ST110S 12 1200 1300 20
14 1400 1500
16 1600 1700
IT(AV) Max. average on-state current 110 A 180° conduction, half sine wave
@ Case temperature 90 °C
IT(RMS) Max. RMS on-state current 175 A DC @ 85°C case temperature
ITSM Max. peak, one-cycle 2700 t = 10ms No voltage
non-repetitive surge current 2830 t = 8.3ms reapplied
2270 t = 10ms 100% VRRM
2380 t = 8.3ms reapplied Sinusoidal half wave,
I2t Maximum I2t for fusing 36.4 t = 10ms No voltage Initial TJ = TJ max.
33.2 t = 8.3ms reapplied
25.8 t = 10ms 100% VRRM
23.5 t = 8.3ms reapplied
I2√t Maximum I2√t for fusing 364 KA2√s t = 0.1 to 10ms, no voltage reapplied
VT(TO)1 Low level value of threshold
voltage
VT(TO)2High level value of threshold
voltage
rt1 Low level value of on-state
slope resistance
rt2 High level value of on-state
slope resistance
VTM Max. on-state voltage 1.52 V Ipk= 350A, TJ = TJ max, tp = 10ms sine pulse
IHMaximum holding current 600
ILTypical latching current 1000
0.90 (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
1.79 (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
1.81 (I > π x IT(AV)),TJ = TJ max.
Parameter ST110S Units Conditions
0.92 (I > π x IT(AV)),TJ = TJ max.
On-state Conduction
KA2s
V
mΩ
mA TJ = 25°C, anode supply 12V resistive load
A
di/dt Max. non-repetitive rate of rise Gate drive 20V, 20Ω, tr ≤ 1µs
of turned-on current TJ = TJ max, anode voltage ≤ 80% VDRM
Gate current 1A, d ig/dt = 1A/µs
Vd = 0.67% VDRM, TJ = 25°C
ITM = 100A, TJ = TJ max, di/dt = 10A/µs, VR = 50V
dv/dt = 20V/µs, Gate 0V 100Ω, tp = 500µs
Parameter ST110S Units Conditions
tdTypical delay time 2.0
Switching
tqTypical turn-off time 100 µs
500 A/µs
ST110S Series
3
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Bulletin I25167 rev. B 01/94
dv/dt Maximum critical rate of rise of
off-state voltage
IRRM Max. peak reverse and off-state
IDRM leakage current
Blocking
500 V/µs TJ = TJ max. linear to 80% rated VDRM
Parameter ST110S Units Conditions
20 mA TJ = TJ max, rated VDRM/VRRM applied
TJMax. operating temperature range -40 to 125
Tstg Max. storage temperature range -40 to 150
RthJC Max. thermal resistance,
junction to case
RthCS Max. thermal resistance,
case to heatsink
T Mounting torque, ± 10% 15.5 Non lubricated threads
(137)
14 Lubricated threads
(120)
wt Approximate weight 130 g
Parameter ST110S Units Conditions
0.195 DC operation
0.08 Mounting surface, smooth, flat and greased
Thermal and Mechanical Specification
PGM Maximum peak gate power 5 T J = TJ max, t p ≤ 5ms
PG(AV) Maximum average gate power 1 T J = TJ ma x, f = 50Hz, d% = 50
IGM Max. peak positive gate current 2.0 A T J = TJ max, t p ≤ 5ms
+VGM Maximum peak positive
gate voltage
-VGM Maximum peak negative
gate voltage
IGT DC gate current required T J = - 40°C
to trigger m A T J = 25°C
TJ = 125°C
VGT DC gate voltage required T J = - 40°C
to trigger V TJ = 25°C
TJ = 125°C
IGD DC gate current not to trigger 10 m A
Parameter ST110S Units Conditions
20
5.0
Triggering
VGD DC gate voltage not to trigger 0.25 V TJ = TJ max
TYP. MAX.
180 -
90 150
40 -
2.9 -
1.8 3.0
1.2 -
Max. gate current/ voltage not to
trigger is the max. value which
will not trigger any unit with rated
VDRM anode-to-cathode applied
Max. required gate trigger/ cur-
rent/ voltage are the lowest value
which will trigger all units 12V
anode-to-cathode applied
W
°C
K/W
Nm
(lbf-in)
Case style TO - 209AC (TO-94) See Outline Table
VT
J = TJ max, tp ≤ 5ms
ST110S Series
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Bulletin I25167 rev. B 01/94
Ordering Information Table
53 4
ST 11 0 S 16 P 0 V
7
689
∆RthJC Conduction
(The following table shows the increment of thermal resistence RthJC when devices operate at different conduction angles than DC)
Device Code
12
180° 0.035 0.025 TJ = TJ max.
120° 0.041 0.042
90° 0.052 0.056 K/W
60° 0.076 0.079
30° 0.126 0.127
Conduction angle Sinusoidal conduction Rectangular conduction Units Conditions
1- Thyristor
2- Essential part number
3-0 = Converter grade
4-S = Compression bonding Stud
5- Voltage code: Code x 100 = VRRM (See Voltage Rating Table)
6- P = Stud base 20UNF threads
7- 0 = Eyelet terminals (Gate and Auxiliary Cathode Leads)
1 = Fast - on terminals (Gate and Auxiliary Cathode Leads)
2 = Flag terminals (For Cathode and Gate Terminals)
8- V = Glass-metal seal (only up to 1200V)
None = Ceramic housing (over 1200V)
9- Critical dv/dt: None = 500V/µsec (Standard value)
L = 1000V/µsec (Special selection)
ST110S Series
5
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Bulletin I25167 rev. B 01/94
Fast-on Terminals
Case Style TO-209AC (TO-94)
All dimensions in millimeters (inches)
Outline Table
C.S. 0.4 mm2
10 (0.39)
RED SHRINK
RED CATHODE
RED SILICON RUBBER
4.3 (0.17) DIA
21 (0.83)
12.5 (0.49) MAX.
157 (6.18)
170 (6.69)
(.0006 s.i.)
8.5 (0.33) DIA.
16.5 (0.65) MAX.
MAX.
70 (2.75) MIN.
CERAMIC HOUSING
22.5 (0.88) MAX. DIA.
29 ( 1.14) MAX.
SW 27
C.S. 16mm2
FLEXIBLE LEAD
(.025 s.i.)
2.6 (0.10) MAX.
WHITE SHRINK
20 (0.79) MIN.
29.5 (1.16)
MAX.
1/2"-20UNF-2A
9.5 (0.37) MIN.
WHITE GATE
215 (8.46)
C.S. 0.4 mm2
215 (8.46) 10 (0.39)
WHITE SHRINK
RED SHRINK
RED CATHODE
RED SILICON RUBBER
4.3 (0.17) DIA
21 (0. 83)
12.5 (0.49) MAX.
157 (6.18)
170 (6.69)
(.0006 s.i.)
GLASS METAL SEAL
8.5 (0.33) DIA.
16.5 (0.65) MAX.
23.5 (0.93) MAX. DIA.
MAX.
29 (1.14) MAX.
70 (2.75) MIN.
C.S. 16mm 2
FLEXIBLE LEAD
(.025 s.i.)
2.6 (0.10) MAX.
20 (0.79) MIN.
29.5 (1.16) MAX.
1/2"-20UNF-2A
SW 27
9.5 (0.37) MIN.
WHITE GATE
AMP. 280000-1
REF-250
ST110S Series
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Bulletin I25167 rev. B 01/94
Case Style TO-208AD (TO-83)
All dimensions in millimeters (inches)
Outline Table
10
1/2"-20UNF-2A
29.5 (1.16)
MAX.
MAX.
46 (1.81)
10
7.5
(0.30)
22.5 DIA.
16.5
(0.65)
12.5 (0.49)
5.2 (0.20) DIA.
29 (1.14)
(0.39)
(0.89) MAX.
21(0.83)
1.5 (0.06) DIA.
(0.39)
49 (1.93)
MAX.
CERAMIC HOUSING
FLAG TERMINALS
SW 27
2.4 (0.09)
10
1/2"-20UNF-2A
29.5 (1.16)
MAX.
46 (1.81)
23.5 DIA.
16.5
(0.65)
12 .5 (0 .49 )
29 (1.14) MAX.
(0.93) MAX.
21(0.83)
1.5 (0.06) DIA.
(0.39)
49 (1.93)
MAX.
GLASS-METAL SEAL
FLAG TERMINALS
SW 27
2.4 (0.09)
10
7.5
(0.30)
5.2 (0.20) DIA.
(039)
ST110S Series
7
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Bulletin I25167 rev. B 01/94
Fig. 4 - On-state Power Loss Characteristics
80
90
100
110
120
130
0 20406080100120
Max imum All ow able C a se Tempe rature (°C)
30°60° 90° 120° 180°
Average On-state Current (A)
Condu ction Angl e
S T110S Serie s
R (DC) = 0.195 K/W
thJC
Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics
80
90
100
110
120
130
0 20 40 60 80 100 120 140 160 180
DC
30°60°
90°120° 180°
Average O n-state Current (A)
Maxim um Allowable Case Temperature (°C)
Conduction Period
ST110S S er ies
R (DC) = 1.95 K/W
thJC
25 50 75 100 125
Maximum Allowable Ambient Temperature (°C)
R = 0.1 K/W - Delta R
thSA
0.2 K/W
0.3 K/W
0.4 K/W
0.6 K/W
0.8 K/W
1 K/W
0.5 K/W
1.2 K/W
0
20
40
60
80
100
120
140
160
180
200
220
0 20 40 60 80 100 120 140 160 180
DC
180°
120°
90°
60°
30°
RMS Li mit
Conduction Peri od
Maximum Average On-state Power Loss (W)
Average On-state Current (A)
ST110S Series
T = 125°C
J
25 50 75 100 125
Maxi mum Allo wable Ambi en t T empe r ature (°C)
R = 0.1 K/W - Delta R
0.2 K/W
0.3 K/W
0.4 K/W
0.5 K/W
0.6 K/W
1 K/W
0.8 K/W
1.2 K/W
thSA
0
20
40
60
80
100
120
140
160
0 20406080100120
180°
120°
90°
60°
30°
RMS Li mit
Con ducti on Angle
Maximum Aver age On-stat e Power Loss (W)
A v erage On-stat e C urrent (A)
ST 11 0 S Se ri es
T = 125°C
J
Fig. 3 - On-state Power Loss Characteristics
ST110S Series
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Bulletin I25167 rev. B 01/94
1000
1200
1400
1600
1800
2000
2200
2400
110100
Number Of Equal Amplitude Half Cycle Curre nt Pulses (N)
Peak Half Sine Wave On-state Cur rent (A)
I nitial T = 1 2 5 °C
@ 60 Hz 0.00 83 s
@ 50 Hz 0.01 00 s
S T110S Ser ies
J
At Any Rated Load Condition A nd With
R ated V Applied F ollowing Sur ge.
RRM
1000
1200
1400
1600
1800
2000
2200
2400
2600
2800
0.01 0.1 1 10
Pulse Train Duration (s)
Maximum No n Re pe titive Surge Current
Versus Pulse Train Dur ati o n. Co ntrol
O f Condu ction May N ot Be M a in ta i ne d .
Pe ak Half S ine Wav e On-state C urr e nt ( A )
Initial T = 125°C
No Vol tage Reapplie d
Rat ed V Reappli ed
J
RRM
ST1 1 0S Series
10
100
1000
10000
0.511.522.533.544.55
T = 25°C
J
Instantane o us On -stat e Curren t (A )
Insta n ta n eous On - s ta te Vo l ta ge ( V )
T = 125°C
J
ST 11 0 S Series
Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current
0.001
0.01
0.1
1
0.001 0.01 0.1 1 10
S q ua re Wav e P u lse Dura t ion (s)
thJC
Transie nt Thermal Impedan ce Z (K/W)
ST110S Series
Stead y Sta te Va lu e
R = 0.195 K / W
(DC Opera tion)
thJC
Fig. 8 - Thermal Impedance ZthJC Characteristic
Fig. 7 - On-state Voltage Drop Characteristics
ST110S Series
9
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Bulletin I25167 rev. B 01/94
Fig. 9 - Gate Characteristics
0.1
1
10
100
0.001 0.01 0.1 1 10 100
VGD IGD
(b)
(a)
Tj=25 °C
Tj=125 °C
Tj=-40 °C
(1) (2) (3)
Instant aneous Gate Curr ent (A)
Instantaneous Gate Voltage (V)
a) Recomm ended lo ad line for
b ) Rec ommended lo ad line fo r
<=30% rated di/dt : 10V, 1 0ohms
Freq uency Limited by PG( AV)
rated di/dt : 20V, 1 0ohms; tr<=1 µs
tr<=1 µs
(1) PGM = 10W, tp = 4ms
(2) PGM = 20W, tp = 2ms
(3) PGM = 40W, tp = 1ms
(4) P GM = 60W, tp = 0.66ms
Device: ST110S Seri es
Re ctangular gate pulse
(4)
