IS43/46DR81280B(L), IS43/46DR16640B(L)
Rev. G 1
3/25/2015
1Gb (x8, x16) DDR2 SDRAM
FEATURES
Clock frequency up to 400MHz
8 internal banks for concurrent operation
4-bit prefetch architecture
Programmable CAS Latency: 3, 4, 5, 6 and 7
Programmable Additive Latency: 0, 1, 2, 3, 4, 5
and 6
Write Latency = Read Latency-1
Programmable Burst Sequence: Sequential or
Interleave
Programmable Burst Length: 4 and 8
Automatic and Controlled Precharge Command
Power Down Mode
Auto Refresh and Self Refresh
Refresh Interval: 7.8 s (8192 cycles/64 ms)
ODT (On-Die Termination)
Weak Strength Data-Output Driver Option
Bidirectional differential Data Strobe (Single-
ended data-strobe is an optional feature)
On-Chip DLL aligns DQ and DQs transitions with
CK transitions
DQS# can be disabled for single-ended data
strobe
Read Data Strobe supported (x8 only)
Differential clock inputs CK and CK#
VDD and VDDQ = 1.8V ± 0.1V
PASR (Partial Array Self Refresh)
SSTL_18 interface
tRAS lockout supported
Operating temperature:
Commercial (TA = 0°C to 70°C ; TC = 0°C to 85°C)
Industrial (TA = -40°C to 85°C; TC = -40°C to 95°C)
Automotive, A1 (TA = -40°C to 85°C; TC = -40°C to 95°C)
Automotive, A2 (TA = -40°C to 105°C; TC = -40°C to
105°C)
OPTIONS
Configuration:
128Mx8 (16M x 8 x 8 banks)
64Mx16 (8M x 16 x 8 banks)
Package:
60-ball TW-BGA for x8
84-ball TW-BGA for x16
Self-Refresh:
Standard
Low Power (L)
ADDRESS TABLE
Parameter
128Mx8
64Mx16
Row Addressing
A0-A13
A0-A12
Column Addressing
A0-A9
A0-A9
Bank Addressing
BA0-BA2
BA0-BA2
Precharge Addressing
A10
A10
Clock Cycle Timing
-3D
-25E
-25D
Units
Speed Grade
DDR2-667D
DDR2-800E
DDR2-800D
CL-tRCD-tRP
5-5-5
6-6-6
5-5-5
tCK
tCK (CL=3)
5
5
5
ns
tCK (CL=4)
3.75
3.75
3.75
ns
tCK (CL=5)
3
3
2.5
ns
tCK (CL=6)
3
2.5
2.5
ns
tCK (CL=7)
3
2.5
2.5
ns
Frequency (max)
333
400
400
MHz
MARCH 2015
IS43/46DR81280B(L), IS43/46DR16640B(L)
Rev. G 2
3/25/2015
Package Ball-out and Description
DDR2 SDRAM (128Mx8) TW-BGA Ball-out (Top-View) (8.00mm x 10.50mm)
Description
Input clocks
Clock enable
Chip Select
Command control pins
Address
Bank Address
I/O
Data Strobe
Redundant Data Strobe
Input data mask
Supply voltage
Ground
DQ power supply
DQ ground
Reference voltage
DLL power supply
DLL ground
On Die Termination Enable
No connect
VDDL
VSSDL
NC
VSS
VDDQ
VSSQ
VREF
ODT
BA[2:0]
DQ[7:0]
DQS, DQS#
RDQS, RDQS#
DM
VDD
Symbol
CK, CK#
CKE
CS#
RAS#,CAS#,WE#
A[13:0]
Notes:
1. Pins B3 and A2 have identical capacitance as pins B7
and A8.
2. For a read, when enabled, strobe pair RDQS & RDQS#
are identical in function and timing to strobe pair DQS &
DQS# and input masking function is disabled.
3. The function of DM or RDQS/RDQS# are enabled by
EMRS command.
4. VDDL and VSSDL are power and ground for the DLL.
IS43/46DR81280B(L), IS43/46DR16640B(L)
Rev. G 3
3/25/2015
DDR2 SDRAM (64Mx16) TW-BGA Ball-out (Top-View) (8.00mm x 12.50mm Body, 0.8mm
pitch)
Description
Input clocks
Clock enable
Chip Select
Command control inputs
Address
Bank Address
I/O
Upper Byte Data Strobe
Lower Byte Data Strobe
Input data mask
Supply voltage
Ground
DQ power supply
DQ ground
Reference voltage
DLL power supply
DLL ground
On Die Termination Enable
No connect
VDDL
VSSDL
NC
ODT
VDD
VSS
VDDQ
VSSQ
LDQS, LDQS#
UDM, LDM
RAS#,CAS#,WE#
A[12:0]
BA[2:0]
VREF
Symbol
CK, CK#
CKE
CS#
DQ[15:0]
UDQS, UDQS#
Note:
VDDL and VSSDL are power and ground for the DLL.
1 2 3 4 5 6 7 8 9
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
IS43/46DR81280B(L), IS43/46DR16640B(L)
Rev. G 4
3/25/2015
Functional Description
Power-up and Initialization
DDR2 SDRAMs must be powered up and initialized in a predefined manner. Operational procedures other than those specified may
result in undefined operation.
Power-up and Initialization Sequence
The following sequence is required for Power-up and Initialization.
1. Either one of the following sequence is required for Power-up:
A. While applying power, attempt to maintain CKE below 0.2 x VDDQ and ODT1 at a LOW state (all other inputs may be
undefined.) The VDD voltage ramp time must be no greater than 200 ms from when VDD ramps from 300 mV to
VDD(Min); and during the VDD voltage ramp, |VDD-VDDQ| ≥ 0.3 V. Once the ramping of the supply voltages is
complete (when VDDQ crosses VDDQ(Min)), the supply voltage specifications provided in the table Recommended DC
Operating Conditions (SSTL_1.8), prevail.
VDD, VDDL and VDDQ are driven from a single power converter output, AND
VTT is limited to 0.95V max, AND
VREF tracks VDDQ/2, VREF must be within ± 300mV with respect to VDDQ/2 during supply ramp time.
VDDQ ≥ VREF must be met at all times
B. While applying power, attempt to maintain CKE below 0.2 x VDDQ and ODT1 at a LOW state (all other inputs may be
undefined, voltage levels at I/Os and outputs must be less than VDDQ during voltage ramp time to avoid DRAM latch-
up. During the ramping of the supply voltages, VDD ≥ VDDL ≥ VDDQ must be maintained and is applicable to both AC
and DC levels until the ramping of the supply voltages is complete, which is when VDDQ crosses VDDQ min. Once the
ramping of the supply voltages is complete, the supply voltage specifications provided in the table Recommended DC
Operating Conditions (SSTL-1.8), prevail.
Apply VDD/VDDL before or at the same time as VDDQ.
VDD/VDDL voltage ramp time must be no greater 200 ms from when VDD ramps from 300 mV to VDD(Min) .
Apply VDDQ before or at the same time as VTT.
The VDDQ voltage ramp time from when VDD(Min) is achieved on VDD to the VDDQ(Min) is achieved on VDDQ
must be no greater than 500 ms.
2. Start clock and maintain stable condition.
3. For the minimum of 200 µs after stable power (VDD, VDDL, VDDQ, VREF, and VTT values are in the range of the minimum and
maximum values specified in the table Recommended DC Operating Conditions (SSTL-1.8)) and stable clock (CK, CK#), then apply
NOP or Deselect and assert a logic HIGH to CKE.
4. Wait minimum of 400 ns then issue a precharge all command. During the 400 ns period, a NOP or Deselect command must be
issued to the DRAM.
5. Issue an EMRS command to EMR(2).
6. Issue an EMRS command to EMR(3).
7. Issue EMRS to enable DLL.
8. Issue a Mode Register Set command for DLL reset.
9. Issue a precharge all command.
10. Issue 2 or more auto-refresh commands.
11. Issue a MRS command with LOW to A8 to initialize device operation. (i.e. to program operating parameters without resetting
the DLL.)
12. Wait at least 200 clock cycles after step 8 and then execute OCD Calibration. EMRS Default command (A9=A8=A7=HIGH)
followed by EMRS OCD Calibration Mode Exit command (A9=A8=A7=LOW) must be issued with other operating parameters of
EMR(1).
13. The DDR2 SDRAM is now ready for normal operation.
Note:
1. To guarantee ODT off, VREF must be valid and a LOW level must be applied to the ODT pin.
IS43/46DR81280B(L), IS43/46DR16640B(L)
Rev. G 5
3/25/2015
Initialization Sequence after Power-Up Diagram
tCH tCL
tIS
CK
CK#
ODT
~
~
~
~
~
~
~
~
~
~
~
~
Command NOP PRE
ALL EMRS MRS REF Any
Com
PRE
ALL REF MRS EMRS EMRS
400ns tRP tMRD
DLL
Enable DLL
Reset
Minimum 200 Cycles
OCD
Default OCD Cal.
Mode Exit
~
~
~
~
tIS
~
~
~
~
~
~
~
~
~
~
~
~
~
~
~
~
~
~
~
~
~
~
~
~
~
~
~
~
tMRD tRP tRFC tRFC Follow OCD
Flowchart
tMRD tOIT
Programming the Mode Register and Extended Mode Registers
For application flexibility, burst length, burst type, CAS# latency, DLL reset function, write recovery time (WR) are user defined
variables and must be programmed with a Mode Register Set (MRS) command. Additionally, DLL disable function, driver impedance,
additive CAS latency, ODT (On Die Termination), single-ended strobe, and OCD (off chip driver impedance adjustment) are also user
defined variables and must be programmed with an Extended Mode Register Set (EMRS) command. Contents of the Mode Register
(MR) or Extended Mode Registers EMR[1] and EMR[2] can be altered by re-executing the MRS or EMRS Commands. Even if the user
chooses to modify only a subset of the MR, EMR[1], or EMR[2] variables, all variables within the addressed register must be
redefined when the MRS or EMRS commands are issued. The x16 option does not have A13, so all references to this address can be
ignored for this option.
MRS, EMRS and Reset DLL do not affect memory array contents, which mean re-initialization including those can be executed at any
time after power-up without affecting memory array contents.
DDR2 Mode Register (MR) Setting
The mode register stores the data for controlling the various operating modes of DDR2 SDRAM. It controls CAS# latency, burst
length, burst sequence, DLL reset, tWR and active power down exit time to make DDR2 SDRAM useful for various applications. The
default value of the mode register is not defined, therefore the mode register must be written after power-up for proper operation.
The mode register is written by asserting LOW on CS#, RAS#, CAS#, WE#, BA0, BA1, and BA2 while controlling the state of address
pins A0 - A13. The DDR2 SDRAM should be in all bank precharge with CKE already HIGH prior to writing into the mode register. The
mode register set command cycle time (tMRD) is required to complete the write operation to the mode register. The mode register
contents can be changed using the same command and clock cycle requirements during normal operation as long as all banks are in
the precharge state. The mode register is divided into various fields depending on functionality. Burst length is defined by A0 - A2
with options of 4 and 8 bit burst lengths. The burst length decodes are compatible with DDR SDRAM. Burst address sequence type is
defined by A3; CAS latency is defined by A4 - A6. The DDR2 doesn’t support half clock latency mode. A7 is used for test mode. A8 is
used for DLL reset. A7 must be set to LOW for normal MRS operation. Write recovery time tWR is defined by A9 - A11. Refer to the
table for specific codes.
IS43/46DR81280B(L), IS43/46DR16640B(L)
Rev. G 6
3/25/2015
Mode Register (MR) Diagram
A12
0
BA2 01
BA1 0
BA0 0A11 A10 A9
A13(1) 0000
001
010
011
100
101
110
111
A8
0A7
1 0
1
A6 A5 A4
000
001
010
011
100
101
110
111
A3
0
1
A2 A1 A0 BL
0 1 0 4
0 1 1 8
Address
Field
Mode
Register
A2
Burst
Length
A6
CAS
Latency
A7
TM
A11
WR
Interleave
A3
BT
5
6
7
A1
Burst Type
Sequential
A0
CAS Latency
Reserved
A5
Reserved
Reserved
A4
3
4
A10
6
Yes
Reserved
A8
DLL
DLL Reset
Mode
No
Normal
7
A9
8
Reserved
A12
PD1
2
3
4
5
WR(cycles)(2)
Slow exit(use tXARDS)
Active power down exit time
Fast exit (use tXARD)
Notes:
1. A13 is reserved for future use and must be set to 0 when programming the MR.
2. WR(write recovery for autoprecharge) min is determined by tCK max and WR max is determined by tCK min. WR in clock cycles is calculated by dividing tWR (in
ns) by tCK (in ns) and rounding up a non-integer value to the next integer (WR[cycles] = tWR(ns)/tCK(ns)). The mode register must be programmed to this value.
This is also used with tRP to determine tDAL.
DDR2 Extended Mode Register 1 (EMR[1]) Setting
The extended mode register 1 stores the data for enabling or disabling the DLL, output driver strength, ODT value selection and
additive latency. The default value of the extended mode register is not defined, therefore the extended mode register must be
written after power-up for proper operation. Extended mode register 1 is written by asserting LOW on CS#, RAS#, CAS#, WE#, BA1,
and BA2, and HIGH on BA0, and controlling pins A0 – A13. The DDR2 SDRAM should be in all bank precharge with CKE already HIGH
prior to writing into the extended mode register. The mode register set command cycle time (tMRD) must be satisfied to complete
the write operation to the extended mode register. Mode register contents can be changed using the same command and clock
cycle requirements during normal operation as long as all banks are in the precharge state. A0 is used for DLL enable or disable. A1 is
used for enabling reduced strength data-output driver. A3 - A5 determines the additive latency, A2 and A6 are used for ODT value
selection, A7 - A9 are used for OCD control, A10 is used for DQS# disable and A11 is used for RDQS enable.
IS43/46DR81280B(L), IS43/46DR16640B(L)
Rev. G 7
3/25/2015
DLL Enable/Disable
The DLL must be enabled for normal operation. DLL enable is required during power up initialization, and upon returning to normal
operation after having the DLL disabled. The DLL is automatically disabled when entering self refresh operation and is automatically
re-enabled upon exit of self refresh operation. Any time the DLL is enabled (and subsequently reset), 200 clock cycles must occur
before a Read command can be issued to allow time for the internal clock to be synchronized with the external clock. Failing to wait
for synchronization to occur may result in a violation of the tAC or tDQSCK parameters.
Extended Mode Register 1(EMR[1]) Diagram
A12
0
BA2 01
BA1 0
BA0 1A11(2)
A13(1) 00 RDQS/DM RDQS# DQS DQS#
1 0 0 DM Hi-Z DQS DQS#
A10 0 1 DM Hi-Z DQS Hi-Z
0 1 0 RDQS RDQS# DQS DQS#
1 1 1 RDQS Hi-Z DQS Hi-Z
A9 A8 A7
000
001
010
100
111
A5 A4 A3
000 A6 A2
001 00
010 01
011 10
100 11
101
110
111
A1 A0
0 0
1 1
RDQS Enable
A11
(RDQS)
A10
(DQS#)
Qoff
Output buffer enabled
Ouput buffer disabled
Strobe Function Matrix
Disable
A11
RDQS
Enable
Disable
A12
Qoff
Enable
DQS#
A10
DQS#
OCD Calibration Program
A9
OCD Calibration mode exit; maintain setting
Reserved
A8
Reserved
Reserved
75 ohms
A7
OCD Calibration default(3)
A6
Rtt
Additive Latency
0
Rtt(NOMINAL)
A5
Additive
Latency
1
ODT Disabled
2
A4
Rtt
Reserved
A1
D.I.C
Output Drive Impedance Control
4
A3
Normal Strength (100%)
Enable
Reduced strength (60%)
3
150 ohms
50 ohms
Disable
A2
OCD
Program
5
6
Address
Field
Mode
Register
DLL enable
A0
DLL
Notes:
1. A13 is reserved for future use and must be set to 0 when programming the EMR[1].
2. If RDQS is enabled, the DM function is disabled. RDQS is active for reads and don’t care for writes. The x16 option does not support RDQS. This must be set to 0
when programming the EMR[1] for the x16 option.
3. After setting to default, OCD calibration mode needs to be exited by setting A9-A7 to 000.
DDR2 Extended Mode Register 2 (EMR[2]) Setting
The extended mode register 2 controls refresh related features. The default value of the extended mode register 2 is not defined.
Therefore, the extended mode register must be programmed during initialization for proper operation. The extended mode register
2 is written by asserting LOW on CS, RAS, CAS, WE, BA0, BA2, and HIGH on BA1, while controlling pins A0-A13. The DDR2 SDRAM
should be in all bank precharge state with CKE already HIGH prior to writing into extended mode register 2. The mode register set
command cycle time (tMRD) must be satisfied to complete the write operation to the extended mode register 2. Mode register
contents can be changed using the same command and clock cycle requirements during normal operation as long as all banks are in
precharge state.
IS43/46DR81280B(L), IS43/46DR16640B(L)
Rev. G 8
3/25/2015
Extended Mode Register 2 (EMR[2]) Diagram
Address
Field
Mode
Register
BA2
0
BA1
1
BA0
0
A13(1) 0
A7
0
1
A2 A1 A0 BA[2:0]
0 0 0 All combinations
0 0 1 000, 001, 010, 011
0 1 0 000, 001
011 000
1 0 0 010, 011, 100, 101, 110, 111
1 0 1 100, 101, 110, 111
1 1 0 110, 111
111 111
A2
PASR(3)
Quarter Array
1/8 array
A1
3/4 array
Half array
A0
Quarter array
1/8 array
A4(1)
0
Partial Array Self Refresh for 8
Banks
A3(1)
0
Full Array
Half Array
A6(1)
0
A5(1)
0
A8(1)
0
High Temperature Self-Refresh Rate Enable
A7
SRFt
Disable
Enable(2)
A10(1)
0
A9(1)
0
A12(1)
0
A11(1)
0
Notes:
1. A3-A6, and A8-A13 are reserved for future use and must be set to 0 when programming the EMR[2].
2. Only Industrial and Automotive grade devices support the high temperature Self-Refresh Mode. The controller can set the EMR (2) [A7] bit to enable this self-
refresh rate if Tc > 85°C while in self-refresh operation. TOPER may not be violated.
3. If PASR (Partial Array Self Refresh) is enabled, data located in areas of the array beyond the specified address range will be lost if self refresh is entered. Data
integrity will be maintained if tREF conditions are met and no Self Refresh command is issued.
DDR2 Extended Mode Register 3 (EMR[3]) Setting
No function is defined in extended mode register 3. The default value of the extended mode register 3 is not defined. Therefore, the
extended mode register 3 must be programmed during initialization for proper operation.
DDR2 Extended Mode Register 3 (EMR[3]) Diagram
BA2 BA1 BA0 A13 A12 A11 A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0
0* 1 1 0* 0* 0* 0* 0* 0* 0* 0* 0* 0* 0* 0* 0* 0*
Address Field
Mode Register
Note: All bits in EMR[3] except BA0 and BA1 are reserved for future use and must be set to 0 when programming the EMR[3].
IS43/46DR81280B(L), IS43/46DR16640B(L)
Rev. G 9
3/25/2015
Truth Tables
Operation or timing that is not specified is illegal, and after such an event, in order to guarantee proper operation, the DRAM must
be powered down and then restarted through the specified initialization sequence before normal operation can continue.
Command Truth Table
Previous
Cycle
Current
Cycle
(Extended) Mode Register HH L L L L BA 1, 2
Refresh (REF) HH L L L H X X X X 1
Self Refresh Entry HL L L L H X X X X 1, 8
HX X X
LH H H
Single Bank Precharge H H LL H L BA X L X 1, 2
Precharge All Banks H H LL H LX X H X 1
Bank Activate H H LL H H BA 1, 2
Write H H LH L L BA XL Column 1, 2, 3, 10
Write with Auto Precharge H H LH L LBA XH Column 1, 2, 3, 10
Read H H LH L H BA XL Column 1, 2, 3, 10
Read with Auto Precharge H H LH L H BA XH Column 1, 2, 3, 10
No Operation (NOP) HX L H H H X X X X 1
Device Deselect HX H X X X X X X X 1
HX X X
LH H H
HX X X
LH H H
Function
CKE
CS#
RAS#
CAS#
WE#
BA2-BA0
An(9)-A11
A10
A9-A0
Notes
Opcode
Sel Refresh Exit
L
H
X
X
X
X
1, 7, 8
Row Address
Power Down Entry
H
L
X
X
X
X
1,4
Power Down Exit
L
H
X
X
X
X
1, 4
Notes:
1. All DDR2 SDRAM commands are defined by states of CS#, RAS#, CAS#, WE# and CKE at the rising edge of the clock.
2. Bank addresses BA0, BA1, and BA2 (BA) determine which bank is to be operated upon. For (E)MRS BA selects an (Extended) Mode Register.
3. Burst reads or writes at BL=4 cannot be terminated or interrupted. See sections "Reads interrupted by a Read" and "Writes interrupted by a Write" for details.
4. The Power Down Mode does not perform any refresh operations. The duration of Power Down is therefore limited by the refresh requirements
5. The state of ODT does not affect the states described in this table. The ODT function is not available during Self Refresh.
6. “X” means “H or L (but a defined logic level)”
7. Self refresh exit is asynchronous.
8. VREF must be maintained during Self Refresh operation.
9. An refers to the MSBs of addresseses. An=A13 for x8, and An=A12 for x16.
IS43/46DR81280B(L), IS43/46DR16640B(L)
Rev. G 10
3/25/2015
Clock Enable (CKE) Truth Table
Previous Cycle(1)(N-1) Current Cycle(1)(N)
L L X Maintain Power-Down 11, 13, 15
L H Deselect or NOP Power Down Exit 4, 8, 11, 13
L L X Maintain Self-Refresh 11, 15, 16
L H Deselect or NOP Self-Refresh Exit 4, 5, 9, 16
Bank(s) Active H L Deselect or NOP Active Power Down Entry 4, 8, 10, 11, 13
H L Deselect or NOP Precharge Power Down Entry 4, 8, 10, 11, 13
H L Refresh Self-Refresh Entry 6, 9, 11, 13
H H 7
Refer to the Command Truth Table
Notes
Power Down
Self Refresh
All Banks Idle
Current State(2)
CKE
Command (N)(3)
RAS#, CAS#, WE#, CS#
Action (N)(3)
Notes:
1. CKE (N) is the logic state of CKE at clock edge N; CKE (N–1) was the state of CKE at the previous clock edge.
2. Current state is the state of the DDR2 SDRAM immediately prior to clock edge N.
3. COMMAND (N) is the command registered at clock edge N, and ACTION (N) is a result of COMMAND (N).
4. All states and sequences not shown are illegal or reserved unless explicitly described elsewhere in this document.
5. On Self Refresh Exit, DESELECT or NOP commands must be issued on every clock edge occurring during the tXSNR period. Read commands may be issued only
after tXSRD (200 clocks) is satisfied.
6. Self Refresh mode can only be entered from the All Banks Idle state.
7. Must be a legal command as defined in the Command Truth Table.
8. Valid commands for Power Down Entry and Exit are NOP and DESELECT only.
9. Valid commands for Self Refresh Exit are NOP and DESELECT only.
10. Power Down and Self Refresh cannot be entered while Read or Write operations, (Extended) Mode Register Set operations or Precharge operations are in
progress.
11. tCKEmin of 3 clocks means CKE must be registered on three consecutive positive clock edges. CKE must remain at the valid input level the entire time it takes to
achieve the 3 clocks of registration. Thus, after any CKE transition, CKE may not transition from its valid level during the time period of tIS + 2 x tCK + tIH.
12. The state of ODT does not affect the states described in this table. The ODT function is not available during Self Refresh.
13. The Power Down does not perform any refresh operations. The duration of Power Down Mode is therefore limited by the refresh requirements outlined in this
datasheet.
14. CKE must be maintained HIGH while the DDRII SDRAM is in OCD calibration mode.
15. “X” means “Don’t Care (including floating around VREF)” in Self Refresh and Power Down. However ODT must be driven HIGH or LOW in Power Down if the ODT
function is enabled (Bit A2 or A6 set to “1” in EMR[1] ).
16. VREF must be maintained during Self Refresh operation.
Data Mask (DM) Truth Table
Name (Functional) DM DQs Note
Write Enable LValid 1
Write Inhibit HX 1
Note:
1. Used to mask write data, provided coincident with the corresponding data.
IS43/46DR81280B(L), IS43/46DR16640B(L)
Rev. G 11
3/25/2015
Commands
DESELECT
The DESELECT function (CS# HIGH) prevents new commands from being executed by the DDR2 SDRAM. The DDR2 SDRAM is
effectively deselected. Operations already in progress are not affected. DESELECT is also referred to as COMMAND INHIBIT.
NO OPERATION (NOP)
The NO OPERATION (NOP) command is used to instruct the selected DDR2 SDRAM to perform a NOP (CS# is LOW; RAS#, CAS#, and
WE# are HIGH). This prevents unwanted commands from being registered during idle or wait states. Operations already in progress
are not affected.
LOAD MODE (LM)
The mode registers are loaded via bank address and address inputs. The bank address balls determine which mode register will be
programmed. See “Mode Register (MR)” in the next section. The LM command can only be issued when all banks are idle, and a
subsequent executable command cannot be issued until tMRD is met.
ACTIVATE
The ACTIVATE command is used to open (or activate) a row in a particular bank for a subsequent access. The value on the bank
address inputs determines the bank, and the address inputs select the row. This row will remains active (or open) for accesses until a
PRECHARGE command is issued to that bank. A PRECHARGE command must be issued before opening a different row in the same
bank.
READ
The READ command is used to initiate a burst read access to an active row. The value on the bank address inputs determine the
bank, and the address provided on address inputs A0–A9 selects the starting column location. The value on input A10 determines
whether or not auto precharge is used. If auto precharge is selected, the row being accessed will be precharged at the end of the
READ burst; if auto precharge is not selected, the row will remain open for subsequent accesses. DDR2 SDRAM also supports the AL
feature, which allows a READ or WRITE command to be issued prior to tRCD(Min) by delaying the actual registration of the
READ/WRITE command to the internal device by AL clock cycles.
WRITE
The WRITE command is used to initiate a burst write access to an active row. The value on the bank select inputs selects the bank,
and the address provided on inputs A0–A9 selects the starting column location. The value on input A10 determines whether or not
auto precharge is used. If auto precharge is selected, the row being accessed will be precharged at the end of the WRITE burst; if
auto precharge is not selected, the row will remain open for subsequent accesses.
DDR2 SDRAM also supports the AL feature, which allows a READ or WRITE command to be issued prior to tRCD(MIN) by delaying the
actual registration of the READ/WRITE command to the internal device by AL clock cycles. Input data appearing on the DQ is written
to the memory array subject to the DM input logic level appearing coincident with the data. If a given DM signal is registered LOW,
the corresponding data will be written to memory; if the DM signal is registered HIGH, the corresponding data inputs will be ignored,
and a WRITE will not be executed to that byte/column location.
PRECHARGE
The PRECHARGE command is used to deactivate the open row in a particular bank or the open row in all banks. The bank(s) will be
available for a subsequent row activation a specified time (tRP) after the PRECHARGE command is issued, except in the case of
concurrent auto precharge, where a READ or WRITE command to a different bank is allowed as long as it does not interrupt the data
transfer in the current bank and does not violate any other timing parameters. After a bank has been precharged, it is in the idle
state and must be activated prior to any READ or WRITE commands being issued to that bank. A PRECHARGE command is allowed if
there is no open row in that bank (idle state) or if the previously open row is already in the process of precharging. However, the
precharge period will be determined by the last PRECHARGE command issued to the bank.
IS43/46DR81280B(L), IS43/46DR16640B(L)
Rev. G 12
3/25/2015
REFRESH
REFRESH is used during normal operation of the DDR2 SDRAM and is analogous to CAS#-before-RAS# (CBR) REFRESH. All banks must
be in the idle mode prior to issuing a REFRESH command. This command is nonpersistent, so it must be issued each time a refresh is
required. The addressing is generated by the internal refresh controller. This makes the address bits a “Don’t Care” during a
REFRESH command.
SELF REFRESH
The SELF REFRESH command can be used to retain data in the DDR2 SDRAM, even if the rest of the system is powered down. When
in the self refresh mode, the DDR2 SDRAM retains data without external clocking. All power supply inputs (including VREF) must be
maintained at valid levels upon entry/exit and during SELF REFRESH operation.
The SELF REFRESH command is initiated like a REFRESH command except CKE is LOW. The DLL is automatically disabled upon
entering self refresh and is automatically enabled upon exiting self refresh.
ODT (On-Die Termination)
The On-Die Termination feature allows the DDR2 SDRAM to easily implement an internal termination resistance (Rtt). For the x8
option, ODT can be configured for DQ[7:0], DQS, DQS#, DM, RDQS, and RDQS# signals. For the x16 option, ODT can be configured for
DQ[15:0], UDQS, LDQS, UDQS#, LDQS#, and UDM, and LDM signals. The ODT feature can be configured with the Extended Mode
Register Set (EMRS) command, and turned on or off using the ODT input signal. Before and after the EMRS is issued, the ODT input
must be received with respect to the timings of tAOFD, tMOD(max), tAOND; and the CKE input must be held HIGH throughout the
duration of tMOD(max).
The DDR2 SDRAM supports the ODT on and off functionality in Active, Standby, and Power Down modes, but not in Self Refresh
mode. ODT timing diagrams follow for Active/Standby mode and Power Down mode.
EMRS to ODT Update Delay
CK#
Command
ODT
CK
EMRS NOP NOP NOP NOPNOP
Old Setting
tMOD(Min)
tMOD(Max)
ODT Ready Updated
tIS
~
~
~
tAOFD
~
~
~
tAOND
IS43/46DR81280B(L), IS43/46DR16640B(L)
Rev. G 13
3/25/2015
ODT Timing for Active/Standby (Idle) Mode and Standard Active Power-Down Mode
CK#
CKE
ODT
CK
RTT
VIH(AC)
VIL(AC)
Internal Term.
Resistance
tIS tIS
tAON(Min)
tAON(Max)
tAOND tAOFD
tIS
tAOF(Min)
tAOF(Max)
012345
tIS
~
~
~
~
tANPD
tAXPD
6 7
Notes:
1. Both ODT to Power Down Entry and Exit Latency timing parameter tANPD and tAXPD are met, therefore Non-Power Down Mode timings have to be applied.
2. ODT turn-on time, tAON(Min) is when the device leaves high impedance and ODT resistance begins to turn on. ODT turn on time max, tAON(Max) is when the
ODT resistance is fully on. Both are measured from tAOND.
3. ODT turn off time min, tAOF(Min), is when the device starts to turn off the ODT resistance. ODT turn off time max, tAOF(Max) is when the bus is in high
impedance. Both are measured from tAOFD.
ODT Timing for Precharge Power-Down Mode
CK#
CKE
ODT
CK
0123456
RTT
VIH(AC)
VIL(AC)
Internal Term.
Resistance
tIS tIS
tAONPD(Max)
tAOFD (Max)
tANPD
tAOFD (Min)
tAONPD(Min)
tAXPD
7 8
Note: Both ODT to Power Down Endtry and Exit Latencies tANPD and tAXPD are not met, therefore Power-Down Mode timings have to be applied.
IS43/46DR81280B(L), IS43/46DR16640B(L)
Rev. G 14
3/25/2015
Absolute Maximum DC Ratings
Symbol
Parameter
Rating
Units
Notes
VDD
Voltage on VDD pin relative to Vss
-1.0 to 2.3
V
1, 3
VDDQ
Voltage on VDDQ pin relative to Vss
- 0.5 to 2.3
V
1, 3
VDDL
Voltage on VDDL pin relative to Vss
- 0.5 to 2.3
V
1, 3
Vin, Vout
Voltage on any pin relative to Vss
- 0.5 to 2.3
V
1, 4
Tstg
Storage Temperature
-55 to +150
°C
1, 2
II
Input Leakage Current
-5 to 5
uA
4
IOZ
Output Leakage Current
-5 to 5
uA
4
IVREF
VREF Leakage Current
-2 to 2
uA
3
Notes:
1. Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect reliability.
2. Storage Temperature is the case surface temperature on the center/top side of the DRAM.
3. VDD and VDDQ must be within 300mV of each other at all times; and VREF must be not greater than 0.6 x VDDQ. When VDD and VDDQ and VDDL are less than
500mV, VREF may be equal to or less than 300mV.
4. Voltage on any input or I/O may not exceed voltage on VDDQ.
AC and DC Operating Conditions
Recommended DC Operating Conditions (SSTL_1.8)
Symbol
Parameter
Rating
Units
Notes
Min.
Typ.
Max.
VDD
Supply Voltage
1.7
1.8
1.9
V
1
VDDL
Supply Voltage for DLL
1.7
1.8
1.9
V
5
VDDQ
Supply Voltage for Output
1.7
1.8
1.9
V
1, 5
VREF
Input Reference Voltage
0.49*VDDQ
0.50*VDDQ
0.51*VDDQ
V
2, 3
VTT
Termination Voltage
VREF-0.04
VREF
VREF+0.04
V
4
Notes:
1. There is no specific device VDD supply voltage requirement for SSTL_1.8 compliance. However, under all conditions VDDQ must be less than or equal to VDD.
2. The value of VREF may be selected by the user to provide optimum noise margin in the system. Typically the value of VREF is expected to be about 0.5 x VDDQ
of the transmitting device and VREF is expected to track variations in VDDQ.
3. Peak to peak AC noise on VREF may not exceed +/-2% VREF(DC).
4. VTT of transmitting device must track VREF of receiving device.
5. AC parameters are measured with VDD, VDDQ and VDDL tied together.
Operating Temperature Condition (1, 2, 3)
Symbol
Parameter
Rating
Units
TOPER
Commercial Operating Temperature
Tc = 0 to 85, Ta = 0 to 70
°C
TOPER
Industrial Operating Temperature, Automotive Operating Temperature (A1)
Tc = -40 to 95, Ta = -40 to 85
°C
TOPER
Automotive Operating Temperature (A2)
Tc = -40 to 105, Ta = -40 to 105
°C
Notes:
1. Tc = Operating case temperature at center of package.
2. Ta = Operating ambient temperature immediately above package center.
3. Both temperature specifications must be met.
IS43/46DR81280B(L), IS43/46DR16640B(L)
Rev. G 15
3/25/2015
Thermal Resistance
Package
Substrate
Theta-ja
(Airflow = 0m/s)
Theta-ja
(Airflow = 1m/s)
Theta-ja
(Airflow = 2m/s)
Theta-jc
Units
60-ball
4-layer
43.2
41.2
40.0
4.7
C/W
84-ball
4-layer
33.6
30.0
27.8
4.5
C/W
AC and DC Logic Input Levels
Single-ended DC Input Logic Level
Symbol
Parameter
Min.
Max.
Units
Notes
VIH(DC)
DC input logic HIGH
VREF + 0.125
VDDQ + 0.3 V
V
VIL(DC)
DC input logic LOW
- 0.3
VREF - 0.125
V
Single-ended AC Input logic level
Symbol
Parameter
DDR2-533
DDR2-667, 800
Units
Min.
Max.
Min.
Max.
VIH(AC)
AC input logic HIGH
VREF + 0.250
VDDQ + Vpeak
VREF + 0.200
VDDQ + Vpeak
V
VIL(AC)
AC input logic LOW
VSSQ - Vpeak
VREF - 0.250
VSSQ - Vpeak
VREF - 0.200
V
Note: Refer to Overshoot and Undershoot Specification for Vpeak value: maximum peak amplitude allowed for overshoot and undershoot.
AC Input Test Conditions
Symbol
Condition
Value
Units
Notes
VREF
Input reference voltage
0.5 x VDDQ
V
1
VREF
Input signal maximum peak to peak swing
1.0
V
1
SLEW
Input signal minimum slew rate
1.0
V/ns
2, 3
Notes:
1. Input waveform timing is referenced to the input signal crossing through the VIH/IL(AC) level applied to the device under test.
2. The input signal minimum slew rate is to be maintained over the range from VREF to VIH(AC) min for rising edges and the range from VREF to VIL(AC) max for
falling edges as shown in the below figure.
3. AC timings are referenced with input waveforms switching from VIL(AC) to VIH(AC) on the positive transitions and VIH(AC) to VIL(AC) on the negative transitions.
AC Input Test Signal Waveform
IS43/46DR81280B(L), IS43/46DR16640B(L)
Rev. G 16
3/25/2015
Differential Input AC logic level
Symbol
Parameter
Min.
Max.
Units
Notes
VID(AC)
AC differential input voltage
0.5
VDDQ
V
1, 3
VIX(AC)
AC differential crosspoint voltage
0.5*VDDQ-0.175
0.5*VDDQ+0.175
V
2
Notes:
1. VID(AC) specifies the input differential voltage |VTR -VCP | required for switching, where VTR is the true input signal (such as CK, DQS, LDQS or UDQS) and VCP
is the complementary input signal (such as CK#, DQS#, LDQS# or UDQS#). The minimum value is equal to V IH(AC) - V IL(AC).
2. The typical value of VIX(AC) is expected to be about 0.5 x VDDQ of the transmitting device and VIX(AC) is expected to track variations in VDDQ. VIX(AC) indicates
the voltage at which differential input signals must cross.
3. Refer to Overshoot and Undershoot Specifications for Vpeak value: maximum peak amplitude allowed for overshoot and undershoot.
IS43/46DR81280B(L), IS43/46DR16640B(L)
Rev. G 17
3/25/2015
Differential Signal Level Waveform
Differential AC Output Parameters
Symbol
Parameter
Min.
Max.
Units
VOX(AC)
AC differential crosspoint voltage
0.5 x VDDQ-0.125
0.5 x VDDQ+0.125
V
Note: The typical value of VOX(AC) is expected to be about 0.5 x VDDQ of the transmitting device and VOX(AC) is expected to track variations in VDDQ. VOX(AC)
indicates the voltage at which differential output signals must cross.
Overshoot and Undershoot Specification
AC Overshoot and Undershoot Specification for Address and Control Pins
Parameter
DDR2-533
DDR2-667
DDR2-800
Unit
Maximum peak amplitude allowed for overshoot area
0.5
0.5
0.5
V
Maximum peak amplitude allowed for undershoot area
0.5
0.5
0.5
V
Maximum overshoot area above VDD*
0.8
0.8
0.66
V-ns
Maximum undershoot area below VSS*
0.8
0.8
0.66
V-ns
Note: Please refer to AC Overshoot and Undershoot Definition Diagram.
AC Overshoot and Undershoot Specification for Clock, Data, Strobe and Mask Pins
Parameter
DDR2-533
DDR2-667
DDR2-800
Unit
Maximum peak amplitude allowed for overshoot area
0.5
0.5
0.5
V
Maximum peak amplitude allowed for undershoot area
0.5
0.5
0.5
V
Maximum overshoot area above VDDQ*
0.23
0.23
0.23
V-ns
Maximum undershoot area below VSSQ*
0.23
0.23
0.23
V-ns
Note: Please refer to AC Overshoot and Undershoot Definition Diagram.
AC Overshoot and Undershoot Definition Diagram
IS43/46DR81280B(L), IS43/46DR16640B(L)
Rev. G 18
3/25/2015
Output Buffer Characteristics
Output AC Test Conditions
Symbol
Parameter
SSTL_18
Units
VOTR
Output Timing Measurement Reference Level
0.5 x VDDQ
V
Note: The VDDQ of the device under test is referenced.
Output DC Current Drive
Symbol
Parameter
SSTL_18
Units
Notes
IOH(DC)
Output Minimum Source DC Current
13.4
mA
1, 3, 4
IOL(DC)
Output Minimum Sink DC Current
-13.4
mA
2, 3, 4
Notes:
1. VDDQ = 1.7 V; VOUT = 1420 mV. (VOUT - VDDQ)/IOH must be less than 21 Ω for values of VOUT between VDDQ and VDDQ - 280 mV.
2. VDDQ = 1.7 V; VOUT = 280 mV. VOUT/IOL must be less than 21 Ω for values of VOUT between 0 V and 280 mV.
3. The dc value of VREF applied to the receiving device is set to VTT
4. The values of IOH(DC) and IOL(DC) are based on the conditions given in Notes 1 and 2. They are used to test device drive current capability to ensure VIH min
plus a noise margin and VIL max minus a noise margin are delivered to an SSTL_18 receiver. The actual current values are derived by shifting the desired driver
operating point (see Section 3.3 of JESD8-15A) along a 21 Ω load line to define a convenient driver current for measurement.
Output Capacitance
Paramater
Symbol
-37C (DDR2-533C)
-3D (DDR2-667D)
-25E (DDR2-800E)/
-25D (DDR2-800D)
Units
Min
Max
Min
Max
Min
Max
Input Capacitance (CK and CK#)
CCK
1.00
2.00
1.00
2.00
1.00
2.00
pF
Input Capacitance Delta (CK and CK#)
CDCK
0.25
0.25
0.25
pF
Input Capacitance (all other input-only pins)
CI
1.00
2.00
1.00
2.00
1.00
1.75
pF
Input Capacitance Delta (all other input-only
pins)
CDI
0.25
0.25
0.25
pF
I/O Capacitance (DQ, DM, DQS, DQS#)
CIO
2.50
4.00
2.50
3.50
2.50
3.50
pF
I/O Capacitance Delta (DQ, DM, DQS, DQS#)
CDIO
0.50
0.50
0.50
pF
IS43/46DR81280B(L), IS43/46DR16640B(L)
Rev. G 19
3/25/2015
ODT DC Electrical Characteristics
Parameter/Condition
Symbol
Min.
Nom.
Max.
Units
Notes
Rtt effective impedance value for EMRS(A6=0, A2=1); 75 ohm
Rtt1(eff)
60
75
90
ohms
1
Rtt effective impedance value for EMRS(A6=1, A2=0); 150 ohm
Rtt2(eff)
120
150
180
ohms
1
Rtt effective impedance value for EMRS(A6=A2=1); 50 ohm
Rtt3(eff)
40
50
60
ohms
1
Deviation of VM with respect to VDDQ/2
Delta VM
-6
+6
%
2
Note:
1. Measurement Definition for Rtt(eff):
Apply VIHac and VILac to test pin seperately, then measure current I(VIHac) and I(VILac) respectively
))AC(VIL(I))AC(VIH(I
)AC(VIL)AC(VIH
)eff(Rtt
2. Measurement Defintion for VM:
Measure voltage (VM) at test pin (midpoint) with no load:
%100x1
VDDQ
VM x 2
VM
ODT AC Electrical Characteristics and Operating Conditions
Symbol
Parameter/Condition
Min.
Max.
Units
Notes
tAOND
ODT turn-on delay
2
2
tCK
tAON
ODT turn-on
tAC(Min)
tAC(Max)+0.7ns
ns
1
tAONPD
ODT turn-on (Power-Down Mode)
tAC(Min)+2ns
2tCK+tAC(Max)+1ns
ns
3
tAOFD
ODT turn-off delay
2.5
2.5
tCK
tAOF
ODT turn-off
tAC(Min)
tAC(Max)+0.6ns
ns
2
tAOFPD
ODT turn-off (Power-Down Mode)
tAC(Min)+2ns
2.5tCK+tAC+1ns
ns
3
tANPD
ODT to Power-Down Mode Entry L:atency
3
tCK
4
tAXPD
ODT Power Down Exit Latency
8
tCK
4
Notes:
1. ODT turn on time min is when the device leaves high impedance and ODT resistance begins to turn on. ODT turn on time max is when the ODT resistance is fully
on. Both are measured from tAOND.
2. ODT turn off time min is when the device starts to turn-off ODT resistance. ODT turn off time max is when the bus is in high impedance. Both are measured from
tAOFD.
3. For Standard Active Power-Down (with MR S A12 = “0”), the non power -down timings (tAOND, tAON, tAOFD and tAOF) apply.
4. tANPD an d tAXPD define the timing limit when either Power Down Mode Timings (tAONPD, tAOFPD) or Non-Power Down Mode timings (tAOND, tAOFD) have
to be applied
IS43/46DR81280B(L), IS43/46DR16640B(L)
Rev. G 20
3/25/2015
IDD Specifications and Conditions
IDD Measurement Conditions
Symbol
Parameter/Condition
IDD0
Operating Current - One bank Active - Precharge:
tCK = tCK(IDD), tRC = tRC(IDD), tRAS = tRASmin(IDD); CKE is HIGH, CS# is HIGH between valid commands; Address bus inputs are SWITCHING;
Data bus inputs are SWITCHING.
IDD1
Operating Current - One bank Active - Read - Precharge:
IOUT = 0mA; BL = 4, CL = CL(IDD), AL = 0; tCK = tCK(IDD), tRC = tRC(IDD), tRAS = tRASmin(IDD), tRCD = tRCD(IDD); CKE is HIGH, CS# is HIGH
between valid commands; Address bus inputs are SWITCHING; Data pattern is same as IDD4W
IDD2P
Precharge Power-Down Current:
All banks idle; tCK = tCK(IDD); CKE is LOW; Other control and address bus inputs are STABLE; Data bus inputs are FLOATING
IDD2Q
Precharge Quiet Standby Current:
All banks idle; tCK = tCK(IDD); CKE is HIGH, CS# is HIGH; Other control and address bus inputs are STABLE; Data bus inputs are FLOATING
IDD2N
Precharge Standby Current:
All banks idle; tCK = tCK(IDD); CKE is HIGH, CS# is HIGH; Other control and address bus inputs are SWITCHING; Data bus inputs are SWITCHING
IDD3Pf
Active Power-Down Current:
All banks open; tCK = tCK(IDD); CKE is LOW; Other control and address bus inputs are STABLE; Data bus inputs are FLOATING. MRS A12 bit is set to
“0”(Fast Power-down Exit).
IDD3Ps
Active Power-Down Current:
All banks open; tCK = tCK(IDD); CKE is LOW; Other control and address bus inputs are STABLE; Data bus inputs are FLOATING. MRS A12 bit is set to
“1”(Slow Power-down Exit).
IDD3N
Active Standby Current:
All banks open;
tCK = tCK(IDD), tRAS = tRASmax(IDD), tRP = tRP(IDD); CKE is HIGH, CS# is HIGH between valid commands; Other control and address bus inputs
are SWITCHING; Data bus inputs are SWITCHING.
IDD4R
Operating Current - Burst Read:
All banks open, Continuous burst reads, IOUT = 0 mA; BL = 4, CL = CL(IDD), AL = 0; tCK = tCK(IDD), tRAS = tRASmax(IDD), tRP = tRP(IDD); CKE is
HIGH, CS# is HIGH between valid commands; Address bus inputs are SWITCHING; Data pattern is same as IDD4W
IDD4W
Operating Current - Burst Write:
All banks open, Continuous burst writes; BL = 4, CL = CL(IDD), AL = 0; tCK = tCK(IDD), tRAS = tRASmax(IDD), tRP = tRP(IDD); CKE is HIGH, CS is
HIGH between valid commands; Address bus inputs are SWITCHING; Data bus inputs are SWITCHING.
IDD5B
Burst Auto-Refresh Current:
tCK = tCK(IDD); Refresh command at every tRFC(IDD) interval; CKE is HIGH, CS# is HIGH between valid commands; Other control and address bus
inputs are SWITCHING; Data bus inputs are SWITCHING.
IDD5D
Distributed Refresh Current:
tCK = tCK(IDD); Refresh command frequency satisfying tREFI; CKE is HIGH, CS# is HIGH between valid commands; Other control and address bus
inputs are SWITCHING; Data bus inputs are SWITCHING.
IDD6
Self-Refresh Current:
CK and CK# at 0 V; CKE 0.2 V; Other control and address bus inputs are FLOATING; Data bus inputs are FLOATING.
IDD7
Operating Bank Interleave Read Current:
All bank interleaving reads, IOUT = 0mA; BL = 4, CL = CL(IDD), AL = tRCD(IDD) - 1 x tCK(IDD); tCK = tCK(IDD), tRC = tRC(IDD), tRRD = tRRD(IDD), tFAW =
tFAW(IDD), tRCD = tRCD(IDD); CKE is HIGH, CS is HIGH between valid commands; Address bus inputs are STABLE during DESELECTs; Data pattern is same as
IDD4R;
Notes:
1. Data bus consists of DQ, DM, DQS, DQS#, RDQS, RDQS#, LDQS, LDQS#, UDQS, and UDQS#. IDD values must be met with all combinations of EMRS bits 10 and 11.
2. For DDR2-667/800 testing, tCK in the Conditions should be interpreted as tCK(avg).
3. Definitions for IDD:
a. LOW is defined as VIN ≤ VILAC(max).
b. HIGH is defined as VIN ≥ VIHAC(min).
c. STABLE = inputs stable at a HIGH or LOW level.
d. FLOATING = inputs at VREF = VDDQ/2.
e. SWITCHING = inputs changing between HIGH and LOW every other clock cycle (once per two clocks) for address and control signals, and inputs
changing between HIGH and LOW every other data transfer (once per clock) for DQ signals not including masks or strobes.
4. Legend: A=Activate, RA=Read with Auto-Precharge, D=DESELECT.
5. Low power self-refresh specification IDD6L is applicable to certain part numbers. Refer to Ordering Information.
IS43/46DR81280B(L), IS43/46DR16640B(L)
Rev. G 21
3/25/2015
IDD Specifications
Symbol
Configuration
-3D
DDR2-667D
-25E/25D
DDR2-800E/800D
Units
IDD0
x8
90
100
mA
x16
100
110
mA
IDD1
x8
105
115
mA
x16
110
120
mA
IDD2P
x8/x16
15
15
mA
IDD2N
x8/x16
45
50
mA
IDD2Q
x8
45
50
mA
x16
50
55
mA
IDD3Pf
x8/x16
33
38
mA
IDD3Ps
x8/x16
15
15
mA
IDD3N
x8/x16
70
75
mA
IDD4R
x8
220
240
mA
x16
220
240
mA
IDD4W
x8
220
240
mA
x16
220
240
mA
IDD5B
x8/x16
210
230
mA
IDD5D
x8/x16
45
45
mA
IDD6
x8/x16
7
7
mA
IDD6(L)
x8/x16
5
5
mA
IDD7
x8
270
290
mA
x16
250
270
mA
Notes:
1. IDD specifications are tested after the device is properly initialized.
2. Input slew rate is specified by AC Parametric Test Condition.
3. IDD parameters are specified with ODT disabled.
4. For A2 temperature grade with TA > 85oC: IDD2P, IDD3P and IDD6 are derated to maximum values 18mA, 22mA and 9mA, respectively.
IS43/46DR81280B(L), IS43/46DR16640B(L)
Rev. G 22
3/25/2015
AC Characteristics
(AC Operating Conditions Unless Otherwise Noted)
Parameter
Symbol
-37C
-3D
-25E
-25D
Units
Notes
DDR2-533C
DDR2-667D
DDR2-800E
DDR2-800D
Min
Max
Min
Max
Min
Max
Min
Max
Row Cycle Time
tRC
55
55
55
55
ns
Auto Refresh Row
Cycle Time
tRFC
127.5
127.5
127.5
127.5
ns
11
Row Active Time
tRAS
40
70K
40
70K
40
70K
40
70K
ns
21
Row Active to
Column Address
Delay
tRCD
15
15
15
12.5
ns
20
Row Active to Row
Active Delay
tRRD(x8)
7.5
7.5
7.5
7.5
ns
tRRD(x16)
10
10
10
10
ns
Four Activate
Window
tFAW(x8)
37.5
37.5
35
35
ns
tFAW(x16)
50
50
45
45
ns
Column Address to
Column Address
Delay
tCCD
2
2
2
2
tCK
Row Precharge Time
tRP
15
15
15
12.5
ns
Write Recovery Time
tWR
15
15
15
15
ns
Auto precharge Write
recovery + Precharge
Time
tDAL
Min = tWR+tRP, Max = n/a
ns
12
Clock Cycle Time
tCK3 (CL=3)
5
8
5
8
ns
2, 24
tCK4 (CL=4)
3.75
8
3.75
8
3.75
8
3.75
8
ns
2, 24
tCK5 (CL=5)
3
8
3
8
2.5
8
ns
2, 24
tCK6 (CL=6)
2.5
8
2.5
8
ns
24
Clock High Level
Width
tCH
0.45
0.55
0.48
0.52
0.48
0.52
0.48
0.52
tCK
Clock Low Level
Width
tCL
0.45
0.55
0.48
0.52
0.48
0.52
0.48
0.52
tCK
Cycle to cycle
tJITcc
250
250
200
200
ps
DQ Output Access
Time from CK, #CK
tAC
-0.5
0.5
-0.45
0.45
-0.4
0.4
-0.4
0.4
ns
DQ Output Access
Time from CK, #CK
tDQSCK
-0.45
0.45
-0.4
0.4
-0.35
0.35
-0.35
0.35
ns
DQS-DQ Skew for DQS
and Related Signals
tDQSQ
0.3
0.24
0.2
0.2
ns
Data-Out Hold Time
from DQS
tQH
Min = tHP(min)-tQHS, Max = n/a
ns
Data Hold Skew
Factor
tQHS
400
340
300
300
ps
Clock Half Period
tHP
Min = tCH(min)/tCL(min), Max = n/a
ns
5
IS43/46DR81280B(L), IS43/46DR16640B(L)
Rev. G 23
3/25/2015
AC Characteristics
(AC Operating Conditions Unless Otherwise Noted)
Parameter
Symbol
-37C
-3D
-25E
-25D
Units
Notes
DDR2-533C
DDR2-667D
DDR2-800E
DDR2-800D
Min
Max
Min
Max
Min
Max
Min
Max
Input Setup Time (fast
slew rate)
tIS
250
200
175
175
ps
15,17
Input Hold Time (fast slew
rate)
tIH
375
275
250
250
ps
15,17
Input Pulse Width
tIPW
0.6
0.6
0.6
0.6
tCK
Write DQS High Level
Width
tDQSH
0.35
0.35
0.35
0.35
tCK
Write DQS Low Level
Width
tDQSL
0.35
0.35
0.35
0.35
tCK
CLK to First Rising Edge of
DQS-In
tDQSS
Min = -0.25tCK, Max = +0.25tCK
tCK
Data-In Setup Time to
DQS-In (DQ, DM)
tDS
100
100
50
50
ps
16,17,
18
Data-In Hold Time to
DQS-In (DQ, DM)
tDH
225
175
125
125
ps
16,17,
18
DQS falling edge from CLK
rising Setup Time
tDSS
0.2
0.2
0.2
0.2
tCK
DQS falling edge from CLK
rising Hold Time
tDSH
0.2
0.2
0.2
0.2
tCK
DQ & DM Pulse Width
tDIPW
0.35
0.35
0.35
0.35
tCK
Read DQS Preamble Time
tRPRE
0.9
1.1
0.9
1.1
0.9
1.1
0.9
1.1
tCK
Read DQS Postamble
Time
tRPST
0.4
0.6
0.4
0.6
0.4
0.6
0.4
0.6
tCK
Write DQS Preamble
Setup Time
tWPRES
0
0
0
0
tCK
Write DQS Preamble Hold
Time
tWPREH
0.25
0.25
0.25
0.25
tCK
Write DQS Preamble Time
tWPRE
0.35
0.35
0.35
0.35
tCK
Write DQS Postamble
Time
tWPST
0.4
0.6
0.4
0.6
0.4
0.6
0.4
0.6
tCK
10
Internal Read to
Precharge Command
Delay
tRTP
7.5
7.5
7.5
7.5
ns
Internal Write to Read
Command Delay
tWTR
7.5
7.5
7.5
7.5
ns
13
Data-Out to High
Impedance from CK/CK#
tHZ
Min = n/a, Max = tAC(max)
ns
7
DQS/DQS# Low
Impedance from CK/CK#
tLZ(DQS)
Min = tAC(min), Max = tAC(max)
ns
7
IS43/46DR81280B(L), IS43/46DR16640B(L)
Rev. G 24
3/25/2015
AC Characteristics
(AC Operating Conditions Unless Otherwise Noted)
Parameter
Symbol
-37C
-3D
-25E
-25D
Units
Notes
DDR2-533C
DDR2-667D
DDR2-800E
DDR2-800D
Min
Max
Min
Max
Min
Max
Min
Max
DQ to Low Impedance from
CK/CK#
tLZ(DQ)
Min = 2 x tAC(min), Max = tAC(max)
ns
7
Mode Register Set Delay
tMRD
2
2
2
2
tCK
9
OCD Drive Mode Output
Delay
tMOD
0
12
0
12
0
12
0
12
ns
ODT Drive Mode Output
Delay
tOIT
0
12
0
12
0
12
0
12
ns
Exit Self refresh to Non-Read
Command
tXSNR
Min = tRFC + 10, Max = n/a
ns
19
Exit Self refresh to Read
Command
tXSRD
200
200
200
200
tCK
Exit Precharge Power Down
to any Non-Read Command
tXP
2
2
2
2
tCK
14
Exit Active Power Down to
Read Command
tXARD
2
2
2
2
tCK
Exit Active Power Down to
Read Command (slow exit,
low power)
tAXRDS
6-AL
7-AL
8-AL
8-AL
tCK
Minimum time clocks
remains ON after CKE
asynchronously drops LOW
tDELAY
Min = tIS+tCK+tIH, Max = n/a
ns
CKE minimum high and low
pulse width
tCKE
3
3
3
3
tCK
Average Periodic Refresh
Interval (-40°C ≤ TC ≤ +85° C)
tREFI
7.8
7.8
7.8
7.8
s
18, 23
Average Periodic Refresh
Interval (+85°C < TC ≤ +95° C)
tREFI
3.9
3.9
3.9
3.9
s
18, 23
Average Periodic Refresh
Interval (+95°C < TC ≤ +105° C)
tREFI
3.9
3.9
3.9
3.9
s
18, 23
Period Jitter
tJITPER
-125
125
-125
125
-100
100
-100
100
ps
22
Duty Cycle Jitter
tJITDTY
-125
125
-125
125
-100
100
-100
100
ps
22
Cycle to Cycle Jitter
tJITCC
-250
250
-250
250
-200
200
-200
200
ps
22
Cumulative error, 2 cycles
tERR(2PER)
-175
175
-175
175
-150
150
-150
150
ps
22
Cumulative error, 3 cycles
tERR(3PER)
-225
225
-225
225
-175
175
-175
175
ps
22
Cumulative error, 4 cycles
tERR(4PER)
-250
250
-250
250
-200
200
-200
200
ps
22
Cumulative error, 5 cycles
tERR(5PER)
-250
250
-250
250
-200
200
-200
200
ps
22
Cumulative error, 6-10 cycles
tERR
(6-10PER)
-350
350
-350
350
-300
300
-300
300
ps
22
Cumulative error, 11-50
cycles
tERR
(11-50PER)
-450
450
-450
450
-450
450
-450
450
ps
22
Notes:
1. Input slew rate is 1 V/ns and AC timings are guaranteed for linear signal transitions.
2. The CK/CK# input reference level (for timing reference to CK/CK#) is the point at which CK and CK# cross the DQS/DQS# input reference level is the cross point
when in differential strobe mode; the input reference level for signals other than CK/CK#, or DQS/DQS# is VREF.
3. Inputs are not recognized as valid until VREF stabilizes. During the period before VREF stabilizes, CKE = 0.2 x VDDQ is recognized as LOW.
4. The output timing reference voltage level is VTT.
IS43/46DR81280B(L), IS43/46DR16640B(L)
Rev. G 25
3/25/2015
5. The values tCL(min) and tCH(min) refer to the smaller of the actual clock low time and the actual clock high time as provided to the device (i.e. this value can be
greater than the minimum specification limits for tCL and tCH.
6. For input frequency change during DRAM operation.
7. Transitions for tHZ and tLZ occur in the same access time windows as valid data transitions. These parameters are not referred to a specific voltage level, but
specify when the device is no longer driving (HZ), or begins driving (LZ).
8. These parameters guarantee device timing, but they are not necessarily tested on each device.
9. The specific requirement is that DQS and DQS# be valid (HIGH, LOW, or some point on a valid transition) on or before this CK edge. A valid transition is defined
as monotonic and meeting the input slew rate specifications of the device. When no writes were previously in progress on the bus, DQS will be transitioning
from Hi-Z to logic LOW. If a previous write was in progress, DQS could be HIGH, LOW, or transitioning from HIGH to LOW at this time, depending on tDQSS.
When programmed in differential strobe mode, DQS is always the logic complement of DQS except when both are in high-Z.
10. The maximum limit for this parameter is not a device limit. The device operates with a greater value for this parameter, but system performance (bus
turnaround) degrades accordingly.
11. A maximum of eight Auto-Refresh commands can be posted to any given DDR2 SDRAM device. (Note: tRFC depends on DRAM density)
12. For each of the terms, if not already an integer, round to the next highest integer. tCK refers to the application clock period. WR refers to the WR parameter
stored in the MRS.
13. Parameter tWTR is at least two clocks independent of operation frequency.
14. User can choose two different active power-down modes for additional power saving via MRS address bit A12. In “standard active power-down mode” (MRS,
A12 = “0”) a fast power-down exit timing tXARD can be used. In “low active power-down mode” (MRS, A12 = “1”) a slow power-down exit timing tXARDS has to
be satisfied.
15. Timings are guaranteed with command / address input slew rate of 1.0 V/ns.
16. Timings are guaranteed with data / mask input slew rate of 1.0 V/ns.
17. Timings are guaranteed with CK/CK# differential slew rate 2.0 V/ns, and DQS/DQS# (and RDQS/RDQS#) differential slew rate 2.0 V/ns in differential strobe
mode.
18. If refresh timing or tDS / tDH is violated, data corruption may occur and the data must be re-written with valid data before a valid READ can be executed.
19. In all circumstances, tXSNR can be satisfied using tXSNR = tRFC + 10 ns.
20. The tRCD timing parameter is valid for both activate command to read or write command with and without Auto-Precharge. Therefore a separate parameter
tRAP for activate command to read or write command with Auto-Precharge is not necessary anymore.
21. tRAS(max) is calculated from the maximum amount of time a DDR2 device can operate without a Refresh command which is equal to 9 x tREFI.
22. Definitions:
a. tCK(avg): tCK(avg) is calculated as the average clock period across any consecutive 200 cycle window.
b. tCH(avg): tCH(avg) is defined as the average HIGH pulse width, as calculated across any consecutive 200 HIGH pulses.
c. tCL(avg): tCL(avg) is defined as the average LOW pulse width, as calculated across any consecutive 200 LOW pulses.
d. tJITDTY: tJITDTY is defined as the cumulative set of tCH jitter and tCL jitter. tCH jitter is the largest deviation of any single tCH from tCH(avg). tCL jitter
is the largest deviation of any single tCL from tCL(avg)
e. tJITPER: tJITPER is defined as the largest deviation of any single tCK from tCK(avg).
f. tJITCC: tJITCC is defined as the difference in clock period between two consecutive clock cycles: tJITCC is not guaranteed through final production
testing
g. tERR: tERR is defined as the cumulative error across multiple consecutive cycles from tCK (avg).
23. Applicable to certain temperature grades. Specified OPER (Tc and Ta) must not be violated for each temperature grade.
24. Speed grade options -3D, -25E, and -25D are backward compatible with all the timing specifications for slower grades, including -37C.
IS43/46DR81280B(L), IS43/46DR16640B(L)
Rev. G 26
3/25/2015
Reference Loads, Slew Rates and Slew Rate Derating
1. Reference Load for Timing Measurements
Figure AC Timing Reference Load represents the timing reference load used in defining the relevant timing parameters of the part. It
is not intended to be either a precise representation of the typical system environment or a depiction of the actual load presented
by a production tester. System designers will use IBIS or other simulation tools to correlate the timing reference load to a system
environment. Manufacturers correlate to their production test conditions (generally a coaxial transmission line terminated at the
tester electronics). This load circuit is also used for output slew rate measurements.
AC Timing Reference Load
CK, CK#
25Ω
Timing
Reference
Points
VTT=VDDQ/2
DQ
DQS
DQS#
RDQS
RDQS#
DUT
VDDQ
The output timing reference voltage level for single ended signals is the crosspoint with VTT. The output timing reference voltage
level for differential signals is the crosspoint of the true (e.g. DQS) and the complement (e.g. DQS#) signal.
2. Slew Rate Measurements
a) Output Slew Rate
Output slew rate is characterized under the test conditions as shown in the figure below.
Output
25Ω
Test Point
VTT=VDDQ/2
DQ
DQS
RDQS
DUT
VDDQ
Output slew rate for falling and rising edges is measured between VTT - 250 mV and VTT + 250 mV for single ended signals. For
differential signals (e.g. DQS – DQS#) output slew rate is measured between DQS – DQS# = - 500 mV and DQS – DQS# = + 500 mV.
Output slew rate is guaranteed by design, but is not necessarily tested on each device.
b) Input Slew Rate
Input slew rate for single ended signals is measured from VREF(DC) to VIH(AC),min for rising edges and from VREF(DC) to VIL(AC),min
for falling edges. For differential signals (e.g. CK – CK#) slew rate for rising edges is measured from CK – CK# = - 250 mV to CK - CK = +
500 mV (+ 250 mV to - 500 mV for falling edges). Test conditions are the same as for timing measurements.
IS43/46DR81280B(L), IS43/46DR16640B(L)
Rev. G 27
3/25/2015
ORDERING INFORMATION
Commercial Range: TC = 0° to +85°C; TA = 0°C to +70°C
Frequency
Speed Grade
CL-tRC-tRP
Order Part No.
Organization
Package
333 MHz
DDR2-667D
5-5-5
IS43DR81280B-3DBL
128Mb x 8
60-ball TW-BGA, lead free
IS43DR16640B-3DBL
64Mb x 16
84-ball TW-BGA, lead free
IS43DR16640BL-3DBL(3)
64Mb x 16
84-ball TW-BGA, lead free
400 MHz
DDR2-800D
5-5-5
IS43DR81280B-25DBL
128Mb x 8
60-ball TW-BGA, lead free
IS43DR16640B-25DBL
64Mb x 16
84-ball TW-BGA, lead free
IS43DR16640BL-25DBL(3)
64Mb x 16
84-ball TW-BGA, lead free
Industrial Range: TC = -40° to +95°C; TA = -40°C to +85°C
Frequency
Speed Grade
CL-tRC-tRP
Order Part No.
Organization
Package
333 MHz
DDR2-667D
5-5-5
IS43DR81280B-3DBLI
128Mb x 8
60-ball TW-BGA, lead free
IS43DR81280B-3DBI
128Mb x 8
60-ball TW-BGA, leaded
IS43DR16640B-3DBLI
64Mb x 16
84-ball TW-BGA, lead free
IS43DR16640BL-3DBLI(3)
64Mb x 16
84-ball TW-BGA, lead free
IS43DR16640B-3DBI
64Mb x 16
84-ball TW-BGA, leaded
400 MHz
DDR2-800D
5-5-5
IS43DR81280B-25DBLI
128Mb x 8
60-ball TW-BGA, lead free
IS43DR16640B-25DBLI
64Mb x 16
84-ball TW-BGA, lead free
IS43DR16640B-25DBI
64Mb x 16
84-ball TW-BGA, leaded
Automotive, A1 Range: TC = -40° to +95°C; TA = -40°C to +85°C
Frequency
Speed Grade
CL-tRC-tRP
Order Part No.
Organization
Package
333 MHz
DDR2-667D
5-5-5
IS46DR81280B-3DBLA1
128Mb x 8
60-ball TW-BGA, lead free
IS46DR16640B-3DBLA1
64Mb x 16
84-ball TW-BGA, lead free
IS46DR16640BL-3DBLA1(3)
64Mb x 16
84-ball TW-BGA, lead free
400 MHz
DDR2-800D
5-5-5
IS46DR81280B-25DBLA1
128Mb x 8
60-ball TW-BGA, lead free
IS46DR16640B-25DBLA1
64Mb x 16
84-ball TW-BGA, lead free
IS46DR16640B-25DBA1
64Mb x 16
84-bell TW-BGA, leaded
Automotive, A2 Range: TC = -40° to +105°C; TA = -40°C to +105°C
Frequency
Speed Grade
CL-tRC-tRP
Order Part No.
Organization
Package
IS46DR81280B -3DBLA2
128Mb x 8
60-ball TW-BGA, lead free
333 MHz
DDR2-667D
5-5-5
IS46DR16640B -3DBLA2
64Mb x 16
84-ball TW-BGA, lead free
IS46DR16640B -3DBA2
64Mb x 16
84-bell TW-BGA, leaded
400 MHz
DDR2-800D
5-5-5
IS46DR81280B -25DBLA2
128Mb x 8
60-ball TW-BGA, lead free
IS46DR16640B-25DBLA2
64Mb x 16
84-ball TW-BGA, lead free
IS46DR16640B-25DBA2
64Mb x 16
84-ball TW-BGA, leaded
Notes:
1. Please contact ISSI for availability of leaded options.
2. The -3D and -25D speed options are backward compatible with all the timing specifications for slower grades, including -37C
3. Low Power self-refresh option has “L” before hyphen.
IS43/46DR81280B(L), IS43/46DR16640B(L)
Rev. G 28
3/25/2015
PACKAGE OUTLINE DRAWING
60-ball TW-BGA: Fine Pitch Ball Grid Array Outline (x8)
IS43/46DR81280B(L), IS43/46DR16640B(L)
Rev. G 29
3/25/2015
84-ball TW-BGA: Fine Pitch Ball Grid Array Outline (x16)