MCL4148, MCL4448
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Rev. 2.1, 01-Aug-12 1Document Number: 85566
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Small Signal Fast Switching Diodes
MECHANICAL DATA
Case: MicroMELF
Weight: approx. 12 mg
Cathode band color: black
Packaging codes/options:
TR3/10K per 13" reel (8 mm tape), 10K/box
TR/2.5K per 7" reel (8 mm tape), 12.5K/box
FEATURES
• Silicon epitaxial planar diode
• Saving space
• Hermetic sealed parts
• Fits onto SOD-323/SOT-23 footprints
• Electrical data identical with the devices 1N4148
and 1N4448 respectively
• MicroMELF package
• AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Extreme fast switches
PARTS TABLE
PART TYPE DIFFERENTIATION ORDERING CODE INTERNAL CONSTRUCTION REMARKS
MCL4148 VRRM = 100 V, VF at IF 50 mA = 1 V MCL4148-TR3 or MCL4148-TR Single Tape and reel
MCL4448 VRRM = 100 V, VF at IF 100 mA = 1 V MCL4448-TR3 or MCL4448-TR Single Tape and reel
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage VR75 V
Repetitive peak reverse voltage VRRM 100 V
Peak forward surge current tp = 1 μs IFSM 2A
Repetitive peak forward current IFRM 450 mA
Forward continuous current IF200 mA
Average forward current VR = 0 IFAV 150 mA
Power dissipation Ptot 500 mW
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Thermal resistance junction to ambient air
Mounted on epoxy-glass
hard tissue, Fig. 5,
35 μm copper clad, 0.9 mm2
copper area per electrode
RthJA 500 K/W
Junction temperature Tj175 °C
Storage temperature range Tstg - 65 to + 175 °C
MCL4148, MCL4448
www.vishay.com Vishay Semiconductors
Rev. 2.1, 01-Aug-12 2Document Number: 85566
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Fig. 1 - Reverse Current vs. Junction Temperature
Fig. 2 - Forward Current vs. Forward Voltage
Fig. 3 - Reverse Current vs. Reverse Voltage
Fig. 4 - Diode Capacitance vs. Reverse Voltage
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL SYMBOL MIN. TYP. MAX. UNIT
Forward voltage
IF = 5 mA MCL4448 VF0.620 0.720 V
IF = 50 mA MCL4148 VF0.860 1 V
IF = 100 mA MCL4448 VF0.930 1 V
Reverse current
VR = 20 V IR25 nA
VR = 20 V, Tj = 150 °C IR50 μA
VR = 75 V IR5μA
Breakdown voltage IR = 100 μA, tp/T = 0.01,
tp = 0.3 ms V(BR) 100 V
Diode capacitance VR = 0 V, f = 1 MHz,
VHF = 50 mV CD4pF
Rectification effiency VHF = 2 V, f = 100 MHz r45 %
Reverse recovery time
IF = IR = 10 mA,
iR = 1 mA trr 8
ns
IF = 10 mA, VR = 6 V,
iR = 0.1 x IR, RL = 100 trr 4
0 0.4 0.8 1.2 1.6
0.1
1
10
100
1000
I-Forward Current (mA)
F
V
F
- Forward Voltage (V)
2.0
16641
MCL 4148
Scattering Limit
T
j
= 25 °C
0 0.4 0.8 1.2 1.6
0.1
1
10
100
1000
I-Forward Current (mA)
F
VF- Forward Voltage (V)
2.0
16643
MCL 4448
Scattering Limit
Tj=25°C
1
10
100
1000
I
R
- Reverse Current (nA)
V
R
- Reverse Voltage (V)
10 1 100
94 9098
T
j
= 25 °C
Scattering Limit
0.1 1 10
0
0.5
1.0
1.5
2.0
3.0
C
D
- Diode Capacitance (pF)
100
94 9099
2.5
V
R
- Reverse Voltage (V)
f = 1 MHz
T
j
= 25 °C
MCL4148, MCL4448
www.vishay.com Vishay Semiconductors
Rev. 2.1, 01-Aug-12 3Document Number: 85566
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 5 - Board for RthJA definition (in mm)
PACKAGE DIMENSIONS in millimeters (inches): MicroMELF
25
2.5
10
0.71 1.3 1.27
9.9
24
0.152
0.355
95 10329
Cathode indification
surface plan1 (0.039)
glass
glass
surface plan
2 (0.079)
1.8 (0.071)
0.25 (0.010)
0.15 (0.006)
1.2 (0.047)
1.1 (0.043)
> R2.5 (0.098)
< 1.35 (0.053)
0.6 (0.024)
Foot print recommendation:
Reflow soldering Wave soldering
2.4 (0.094) 2.8 (0.110)
0.8 (0.031)0.8 (0.031) 0.9 (0.035) 0.9 (0.035)
1.2 (0.047)
0.8 (0.031)
1.4 (0.055)
1 (0.039)
Document no.:6.560-5007.01-4
Rev. 13 - Date: 07.June.2006
96 12072
Created - Date: 26.July.1996
*
* The gap between plug and glass can
be either on cathode or anode side
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www.vishay.com Vishay
Revision: 08-Feb-17 1Document Number: 91000
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