TO-220 Plastic-Encapsulated Transistors
TIP125, 126, 127 Darlington TRANSISTOR (PNP)
FEATURES
Power dissipation
PCM: 2 W (Tamb=25℃)
Collector current
ICM: -5 A
Collector-base voltage
V(BR)CBO: TIP125: -60 V
TIP126: -80 V
TIP127: -100 V
Operating and storage junction temperature range
TJ, T stg: -55℃ to +1 5 0 ℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN MAX UNIT
Collector-base breakdown voltage TIP125
TIP126
TIP127
V(BR)CBO Ic= -1mA, IE=0
-60
-80
-100
V
Collector-emitter breakdown voltage TIP125
TIP126
TIP127
V(BR)CEO Ic= -100mA, IB=0
-60
-80
-100
V
Collector cut-off current TIP125
TIP126
TIP127
ICBO
VCB= -60V, IE=0
VCB= -80V, IE=0
VCB= -100V, IE=0
-0.2
-0.2
-0.2
mA
Collector cut-off current TIP125
TIP126
TIP127
ICEO
VCE=-30V, IB=0
VCE=-40V, IB=0
VCE=-50V, IB=0
-0.5
-0.5
-0.5
mA
Emitter cu t-off cu rre n t IEBO V
EB= -5V, IC=0 -2 mA
hFE(1) V
CE= -3V, IC= -0.5A 1000
DC current gain hFE(2) V
CE= -3V, IC= -3 A 1000
Collector-emitter saturation voltage VCE(sat) IC=-3A, IB=-12 mA
IC=-5 A , IB=-20 mA -2
-4 V
Base-emitter ON voltage VBE(on) VCE=-3V, I C=- 3 A -2.5 V
1 2 3
TO-220
1. BASE
2. COLLECTOR
3. EMITTER
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