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Tanceram® chip capaciTors
TANCERAM
®
chip capacitors can replace tantalum capacitors
in many applications and offer several key advantages over
traditional tantalums. Because Tanceram
®
capacitors exhibit
extremely low ESR, equivalent circuit performance can often
be achieved using considerably lower capacitance values.
Low DC leakage reduces current drain, extending the battery
life of portable products. Tancerams
®
high DC breakdown
voltage ratings offer improved reliability and eliminate large
voltage de-rating common when designing with tantalums.
AdvAntAges
• Low ESR • Low DC Leakage
• Higher Surge Voltage • Non-polarized Devices
• Reduced CHIP Size • Improved Reliability
• Higher Insulation Resistance • Higher Ripple Current
0.01
0.1
1
10
0.001 0.01 0.1 110 100
ESR (Ohms)
Frequency (MHz)
Typical ESR Comparison
1.0 μF / 16V Tantalum
1.0 μF / 16V TANCERAM
0%
25%
50%
75%
100%
0 100 200 300 400 500
% Distribution
DC Breakdown Voltage
Typical Breakdown Voltage Comparison
1.0 μF / 16V
Tantalum
1.0 μF / 16V TANCERAM
ApplicAtions
• Switching Power Supply Smoothing (Input/Output) • Backlighting Inverters
• DC/DC Converter Smoothing (Input/Output) • General Digital Circuits
How to order tAncerAM®
Part number written: 100R15X106MV4E
100 R15 X 106 M V4E
VOLTAGE SIZE DIELECTRIC CAPACITANCE TOLERANCE TERMINATION MARKING PACKING
6R3 = 6.3 V
100 = 10 V
160 = 16 V
250 = 25 V
500 = 50 V
101 = 100 V
See Chart
W = X7R
X = X5R
1st two digits are
significant; third digit
denotes number of
zeros.
105 = 1.00 µF
476 = 47.0 µF
107 = 100 µF
K = ±10%
M = ±20%
V = Nickel Barrier
with 100% Tin
Plating (Matte)
T = SnPb*
(*available on
select parts)
4 = Unmarked
Code Type Reel
E Plastic 7”
T Paper 7”
Tape specifications
conform to EIA RS481
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electricAl cHArActeristics
Dielectric: X7R X5R
Temperature Coefficient:
±15% (-55 to +125°C) ±15% (-55 to +85°C)
Dissipation Factor:
For ≥ 50 VDC: 5% max.
For ≤ 25 VDC: 10% max.
For ≥ 50 VDC: 5% max.
For ≤ 25 VDC: 10% max.
Insulation Resistance (Min. @ 25°C, Wvdc)
100 ΩF or 10 GΩ, whichever is less
Dielectric Strength:
2.5 X WVDC, 25°C, 50mA max.
Test Conditions:
Capacitance values ≤ 22 µF: 1.0kHz±50Hz @ 1.0±0.2 Vrms
Capacitance values > 22 µF: 120Hz±10Hz @ 0.5V±0.1 Vrms
Other: See page 35 for additional dielectric specifications.
Tanceram® chip capaciTors
cAse size cApAcitAnce selection
EIA / JDI
Inches (mm)
VDC
1.0 µF 2.2 µF 3.3 µF 4.7 µF 10 µF 22 µF 47 µF 100 µF
0402
R07
L
W
T
EB
.040 ±.004
.020 ±.004
.025 Max.
.008 ±.004
(1.02 ±.10)
(0.51 ±.10)
(0.64)
(0.20±.10)
16
10
6.3
0603
R14
L
W
T
EB
.063 ±.008
.032 ±.008
.035 Max.
.010±.005
(1.60 ±.20)
(0.81 ±.20)
(0.89)
(.25±.13)
25
16
10
6.3
0805
R15
L
W
T
EB
.080 ±.010
.050 ±.010
.060 Max.
.020±.010
(2.03 ±.25)
(1.27 ±.25)
(1.52)
(0.51±.25 )
50
25
16
10
6.3
1206
R18
L
W
T
EB
.125 ±.013
.062 ±.010
.070 Max.
.020 +.015-0.01
(3.17 ±.35)
(1.57 ±.25)
(1.78)
(0.51+.38-.25)
100
50
35
25
16
10
6.3
1210
S41
L
W
T
EB
.126 ±.016
.098 ±.012
.110 Max.
.020 +.015-.010
(3.20 ±.40)
(2.50 ±.30)
(2.8)
(0.51+.38-.25)
100
50
35
25
16
10
6.3
1812
S43
L
W
T
EB
.177 ±.016
.126 ±.012
.140 Max.
.035 ±.020
(4.50 ±.40)
(3.20 ±.30)
(3.55)
(0.89 ±0.51)
100
50
25
16
10
6.3
W X W X W X W X W X W X W X W X
L
W
TE/B
DIELECTRIC
W (X7R)
X (X5R)
