Technische Information / Technical Information IGBT-Module IGBT-Modules BSM50GP60G Elektrische Eigenschaften / Electrical properties Hochstzulassige Werte / Maximum rated values Diode Gleichrichter/ Diode Rectifier Periodische Ruckw. Spitzensperrspannung repetitive peak reverse voltage VRRM 1600 V Durchlastrom Grenzeffektivwert RMS forward current per chip I FRMSM 40 A Id 50 A I FSM 315 A Dauergleichstrom DC forward current TC = 80C Stostrom Grenzwert tP = 10 ms, Tvj = surge forward current tP = 10 ms, Tvj = 150C Grenzlastintegral tP = 10 ms, Tvj = 2 I t - value 25C 260 A 500 As 340 As VCES 600 V I C,nom. 50 A IC 70 A I CRM 100 A Ptot 250 W VGES +/- 20V V IF 50 A I FRM 100 A I 2t 760 A2s VCES 600 V TC = 80 C I C,nom. 25 A TC = 25 C IC 35 A 2 25C I t tP = 10 ms, Tvj = 150C 2 2 Transistor Wechselrichter/ Transistor Inverter Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom DC-collector current Tc = 80 C TC = 25 C Periodischer Kollektor Spitzenstrom repetitive peak collector current tP = 1 ms, Gesamt-Verlustleistung total power dissipation TC = 25C TC = 80 C Gate-Emitter-Spitzenspannung gate-emitter peak voltage Diode Wechselrichter/ Diode Inverter Dauergleichstrom DC forward current Tc = 80 C Periodischer Spitzenstrom repetitive peak forw. current tP = 1 ms Grenzlastintegral I 2t - value VR = 0V, tp = 10ms, Tvj = 125C Transistor Brems-Chopper/ Transistor Brake-Chopper Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom DC-collector current Periodischer Kollektor Spitzenstrom repetitive peak collector current tP = 1 ms, TC = 80C I CRM 50 A Gesamt-Verlustleistung total power dissipation TC = 25C Ptot 130 W VGES +/- 20V V IF 12,5 A I FRM 25 A Gate-Emitter-Spitzenspannung gate-emitter peak voltage Diode Brems-Chopper/ Diode Brake-Chopper Dauergleichstrom DC forward current Tc = 80 C Periodischer Spitzenstrom repetitive peak forw. current tP = 1 ms prepared by: Andreas Schulz date of publication:29.03.2001 approved by: Robert Severin revision: 3 1(11) http://store.iiic.cc/ DB-PIM-10.xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM50GP60G Modul Isolation/ Module Isolation Isolations-Prufspannung insulation test voltage RMS, f = 50 Hz, t = 1 min. NTC connected to Baseplate VISOL 2,5 kV Elektrische Eigenschaften / Electrical properties Charakteristische Werte / Characteristic values min. typ. max. VF - 1,3 - V Tvj = 150C V(TO) - - 0,8 V Ersatzwiderstand slope resistance Tvj = 150C rT - - 10,5 m Sperrstrom reverse current Tvj = 150C, IR - 2 - mA Modul Leitungswiderstand, Anschlusse-Chip lead resistance, terminals-chip TC = 25C RAA'+CC' - 4 - m min. typ. max. - 1,95 2,55 V - 2,2 - V VGE(TO) 4,5 5,5 6,5 V Cies - 2,8 - nF Diode Gleichrichter/ Diode Rectifier Durchlaspannung forward voltage Tvj = 150C, Schleusenspannung threshold voltage IF = 50 A VR = 1600 V Transistor Wechselrichter/ Transistor Inverter VGE = 15V, Tvj = 25C, Kollektor-Emitter Sattigungsspannung collector-emitter saturation voltage VGE = 15V, Tvj = 125C, IC = 50 A IC = 50 A IC = 1,0 mA Gate-Schwellenspannung gate threshold voltage VCE = VGE, Eingangskapazitat input capacitance f = 1MHz, Tvj = 25C VCE = 25 V, VGE = 0 V Kollektor-Emitter Reststrom collector-emitter cut-off current VGE = 0V, Tvj = 25C, VCE = 600 V VGE = 0V, Tvj =125C, VCE = 600 V Gate-Emitter Reststrom gate-emitter leakage current Einschaltverzogerungszeit (ind. Last) turn on delay time (inductive load) Anstiegszeit (induktive Last) rise time (inductive load) Abschaltverzogerungszeit (ind. Last) turn off delay time (inductive load) Fallzeit (induktive Last) fall time (inductive load) Einschaltverlustenergie pro Puls turn-on energy loss per pulse Abschaltverlustenergie pro Puls turn-off energy loss per pulse Tvj = 25C, VCE = 0V, VGE =20V, Tvj =25C I C = INenn, VCC = 22 Ohm VGE = 15V, Tvj = 125C, RG = 22 Ohm I C = INenn, 300 V VGE = 15V, Tvj = 25C, RG = 22 Ohm VGE = 15V, Tvj = 125C, RG = 22 Ohm I C = INenn, 300 V VCC = VGE = 15V, Tvj = 25C, RG = 22 Ohm VGE = 15V, Tvj = 125C, RG = 22 Ohm I C = INenn, 300 V VCC = VGE = 15V, Tvj = 25C, RG = 22 Ohm VGE = 15V, Tvj = 125C, RG = 22 Ohm I C = INenn, 300 V VCC = VGE = 15V, Tvj = 125C, RG = I C = INenn, 75 nH VCC = 300 V LS = Kurzschluverhalten SC Data 22 Ohm LS = VGE = 15V, Tvj = 125C, RG = I CES - 1,5 500 A - 2,0 - mA I GES - - 300 nA td,on - 50 - ns - 50 - ns - 55 - ns - 55 - ns 300 V VGE = 15V, Tvj = 25C, RG = VCC = VCE sat 22 Ohm tr td,off - 260 - ns - 275 - ns - 30 - ns - 40 - ns Eon - 2,3 - mWs Eoff - 1,7 - mWs I SC - 200 - A tf 75 nH tP 10s, VGE 15V, RG = Tvj125C, VCC = 360 V dI/dt = 3000 A/s 22 Ohm 2(11) http://store.iiic.cc/ DB-PIM-10.xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM50GP60G Elektrische Eigenschaften / Electrical properties Charakteristische Werte / Characteristic values Modulinduktivitat stray inductance module Modul Leitungswiderstand, Anschlusse-Chip lead resistance, terminals-chip TC = 25C Diode Wechselrichter/ Diode Inverter Durchlaspannung forward voltage VGE = 0V, Tvj = 25C, IF = 50 A VGE = 0V, Tvj = 125C, IF = 50 A Ruckstromspitze peak reverse recovery current Sperrverzogerungsladung recovered charge Abschaltenergie pro Puls reverse recovery energy I F=INenn, - diF/dt = 300 V VGE = -10V, Tvj = 125C, VR = 300 V I F=INenn, 1150A/s VGE = -10V, Tvj = 25C, VR = 300 V VGE = -10V, Tvj = 125C, VR = 300 V I F=INenn, 1150A/s - diF/dt = VGE = -10V, Tvj = 25C, VR = 300 V VGE = -10V, Tvj = 125C, VR = 300 V Transistor Brems-Chopper/ Transistor Brake-Chopper VGE = 15V, Tvj = 25C, Kollektor-Emitter Sattigungsspannung collector-emitter saturation voltage VGE = 15V, Tvj = 125C, IC = 25,0 A IC = 25,0 A IC = 0,5 mA Gate-Schwellenspannung gate threshold voltage VCE = VGE, Eingangskapazitat input capacitance f = 1MHz, Tvj = 25C VCE = 25 V, VGE = 0 V Kollektor-Emitter Reststrom collector-emitter cut-off current VGE = 0V, Tvj = 25C, VCE = 600 V VGE = 0V, Tvj = 125C, VCE = 600 V Gate-Emitter Reststrom gate-emitter leakage current Tvj = 25C, VCE = 0V, VGE = 20V, Tvj = 25C Diode Brems-Chopper/ Diode Brake-Chopper Tvj = 25C, Durchlaspannung forward voltage Tvj = 125C, 25,0 A IF = 25,0 A TC = 25C Abweichung von R100 deviation of R100 TC = 100C, R100 = 493 Verlustleistung power dissipation TC = 25C B-Wert B-value R2 = R1 exp [B(1/T2 - 1/T1)] max. LCE - - 100 nH RCC'+EE' - 7 - m min. typ. max. - 1,25 1,7 V - 1,2 - V - 35 - A - 46 - A - 3,4 - As - 6,2 - As - 0,8 - mWs - 1,3 - mWs min. typ. max. - 2,2 2,75 V - 2,5 - V VGE(TO) 4,5 5,5 6,5 V Cies - 1,1 - nF VF I RM Qr ERQ VCE sat I CES - 0,7 500 A - 1,0 - mA - - 300 nA min. typ. max. - 1,6 2,05 V - 1,65 - V min. typ. max. R25 - 5 - k R/R -5 5 % 20 mW I GES IF = NTC-Widerstand/ NTC-Thermistor Nennwiderstand rated resistance typ. 1150A/s VGE = -10V, Tvj = 25C, VR = - diF/dt = min. VF P25 B25/50 3375 K 3(11) http://store.iiic.cc/ DB-PIM-10.xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM50GP60G Thermische Eigenschaften / Thermal properties Innerer Warmewiderstand thermal resistance, junction to case RthJC Gleichr. Diode/ Rectif. Diode min. typ. max. - - 1 K/W Trans. Wechsr./ Trans. Inverter - - 0,5 K/W Diode Wechsr./ Diode Inverter - - 0,8 K/W Trans. Bremse/ Trans. Brake - - 1 K/W Diode Bremse/ Diode Brake - - 2,3 K/W - 0,04 - K/W - 0,02 - K/W - 0,04 - K/W Ubergangs-Warmewiderstand Gleichr. Diode/ Rectif. Diode Paste=1W/m*K thermal resistance, case to heatsink Trans. Wechsr./ Trans. Inverter grease=1W/m*K RthCK Diode Wechsr./ Diode Inverter Hochstzulassige Sperrschichttemperatur maximum junction temperature Tvj - - 150 C Betriebstemperatur operation temperature Top -40 - 125 C Lagertemperatur storage temperature Tstg -40 - 125 C Mechanische Eigenschaften / Mechanical properties Innere Isolation internal insulation Al2O3 CTI comperative tracking index 225 M Anzugsdrehmoment f. mech. Befestigung mounting torque 3 Nm 10% Gewicht weight G 300 g 4(11) http://store.iiic.cc/ DB-PIM-10.xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM50GP60G Ausgangskennlinienfeld Wechselr. (typisch) Output characteristic Inverter (typical) IC = f (VCE) VGE = 15 V 100 90 80 Tj = 25C 70 Tj = 125C IC [A] 60 50 40 30 20 10 0 0 0,5 1 1,5 2 2,5 3 3,5 4 4,5 5 4 4,5 5 VCE [V] Ausgangskennlinienfeld Wechselr. (typisch) IC = f (VCE) Output characteristic Inverter (typical) Tvj = 125C 100 90 VGE = 20V VGE = 15V 80 VGE = 12V VGE = 10V 70 VGE = 9V IC [A] 60 50 40 30 20 10 0 0 0,5 1 1,5 2 2,5 3 3,5 VCE [V] 5(11) http://store.iiic.cc/ DB-PIM-10.xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM50GP60G Ubertragungscharakteristik Wechselr. (typisch) IC = f (VGE) Transfer characteristic Inverter (typical) VCE = 20 V 100 90 80 70 Tj = 25C Tj = 125C IC [A] 60 50 40 30 20 10 0 0 2 4 6 8 10 12 14 VGE [V] Durchlakennlinie der Freilaufdiode Wechselr. (typisch) Forward characteristic of FWD Inverter (typical) IF = f (VF) 100 90 80 70 Tj = 25C Tj = 125C IF [A] 60 50 40 30 20 10 0 0 0,2 0,4 0,6 0,8 1 1,2 1,4 1,6 VF [V] 6(11) http://store.iiic.cc/ DB-PIM-10.xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM50GP60G Schaltverluste Wechselr. (typisch) Eon = f (IC), Eoff = f (IC), Erec = f (IC) Switching losses Inverter (typical) Tj = 125C, VGE = 15 V, 60 80 VCC = 300 V RGon = RGoff = 22 Ohm 8 7 Eon Eoff E [mWs] 6 Erec 5 4 3 2 1 0 0 20 40 100 120 IC [A] Schaltverluste Wechselr. (typisch) Switching losses Inverter (typical) Eon = f (RG), Eoff = f (RG), Erec = f (RG) Tj = 125C, VGE = +-15 V , Ic = Inenn , 300 V VCC = 4 Eon 3,5 Eoff Erec E [mWs] 3 2,5 2 1,5 1 0,5 0 0 5 10 15 20 25 30 35 40 45 50 RG [ ] 7(11) http://store.iiic.cc/ DB-PIM-10.xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM50GP60G Transienter Warmewiderstand Wechselr. Transient thermal impedance Inverter ZthJC = f (t) 1 Zth-IGBT ZthJC [K/W] Zth-FWD 0,1 0,01 0,001 0,01 0,1 1 10 t [s] Sicherer Arbeitsbereich Wechselr. (RBSOA) IC = f (VCE) Reverse bias save operating area Inverter (RBSOA) Tvj = 125C, VGE = 15V, RG = 22 Ohm 120 100 80 IC,Modul IC [A] IC,Chip 60 40 20 0 0 100 200 300 400 500 600 700 VCE [V] 8(11) http://store.iiic.cc/ DB-PIM-10.xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM50GP60G Ausgangskennlinienfeld Brems-Chopper-IGBT (typisch) Output characteristic brake-chopper-IGBT (typical) IC = f (VCE) VGE = 15 V 50 45 40 Tj = 25C Tj = 125C 35 IC [A] 30 25 20 15 10 5 0 0 0,5 1 1,5 2 2,5 3 3,5 4 4,5 VCE [V] Durchlakennlinie der Brems-Chopper-Diode (typisch) IF = f (VF) Forward characteristic of brake-chopper-FWD (typical) 50 45 40 35 Tj = 25C Tj = 125C IF [A] 30 25 20 15 10 5 0 0 0,5 1 1,5 2 2,5 VF [V] 9(11) http://store.iiic.cc/ DB-PIM-10.xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM50GP60G Durchlakennlinie der Gleichrichterdiode (typisch) Forward characteristic of Rectifier Diode (typical) IF = f (VF) 100 90 80 70 Tj = 25C Tj = 150C IF [A] 60 50 40 30 20 10 0 0 0,2 0,4 0,6 0,8 1 1,2 1,4 1,6 1,8 2 VF [V] NTC- Temperaturkennlinie (typisch) R = f (T) NTC- temperature characteristic (typical) 100000 Rtyp R[ ] 10000 1000 100 0 20 40 60 80 100 120 140 160 TC [C] 10(11) http://store.iiic.cc/ DB-PIM-10.xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM50GP60G Schaltplan/ Circuit diagram 21 8 22 20 1 2 3 23 19 7 14 18 13 4 12 24 9 16 17 5 15 6 NTC 11 10 Gehauseabmessungen/ Package outlines Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. 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