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SUMMARY
V(BR)DSS
DSSDSS
DSS=-30V; RDS(ON)=0.075⍀
ID
DD
D=-3.8A
DESCRIPTION
This new generation of high density MOSFETs from Zetex utilises a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.
FEATURES
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
Low profile SOIC package
APPLICATIONS
DC - DC Converters
Power Management Functions
Disconnect switches
Motor control
ORDERING INFORMATION
DEVICE REEL SIZE
(inches) TAPE WIDTH (mm) QUANTITY
PER REEL
ZXM64P03XTA 7 12mm embossed 1000 units
ZXM64P03XTC 13 12mm embossed 4000 units
DEVICE MARKING
ZXM4P03
30V P-CHANNEL ENHANCEMENT MODE MOSFET
MSOP8
ZXM64P03X
1234
8
7
65
S
S
S
G
D
D
D
D
145
PROVISIONAL ISSUE A - JULY 1999
ZXM64P03X
146
THERMAL RESISTANCE
PARAMETER SYMBOL VALUE UNIT
Junction to Ambient (a) R
JA 113 °C/W
Junction to Ambient (b) R
JA 70 °C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t⭐10 secs.
(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal
Impedance graph.
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDSS -30 V
Gate- Source Voltage VGS
20 V
Continuous Drain Current (VGS=4.5V; TA=25°C)(b)
(V
GS=4.5V; TA=70°C)(b) ID-3.8
-3.0 A
Pulsed Drain Current (c) IDM -19 A
Continuous Source Current (Body Diode)(b) IS-2.3 A
Pulsed Source Current (Body Diode)(c) ISM -19 A
Power Dissipation at TA=25°C (a)
Linear Derating Factor PD1.1
8.8 W
mW/°C
Power Dissipation at TA=25°C (b)
Linear Derating Factor PD1.8
14.4 W
mW/°C
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
PROVISIONAL ISSUE A - JULY 1999
ZXM64P03X
0.1 10 100
0.0001 100
0 80 160
-VDS - Drain-Source Voltage (V)
Safe Operating Area
100m
1
100
-I
D
- Drain Current (A)
D=0.1
D=0.2
Thermal Resistance (°C/W)
80
40
0
Max Power Dissipation (Watts)
2.0
1.0
0
T - Temperature (°C)
Derating Curve
Single Pulse
D=0.5
Themal Resistance (°C/W)
0.0001
01000
60
120
Single Pulse
D=0.5
D=0.2
D=0.1
1
10
0.5
1.5
140120100604020
1010.010.001 1001010.10.010.001
90
30
60
20
0.1
Pulse Width (s)
Transient Thermal Impedance
Pulse Width (s)
Transient Thermal Impedance
Refer Note (b) Refer Note (a)
Refer Note (b)
Refer Note (a)
CHARACTERISTICS
DC
1s
100ms
10ms
1ms
100us
Refer Note (a)
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PROVISIONAL ISSUE A - JULY 1999
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
STATIC
Drain-Source Breakdown Voltage V(BR)DSS -30 V ID=-250
A, VGS=0V
Zero Gate Voltage Drain Current IDSS -1
AVDS=-30V, VGS=0V
Gate-Body Leakage IGSS
100 nA VGS=
20V, VDS=0V
Gate-Source Threshold Voltage VGS(th) -1.0 V ID=-250
A, VDS=
VGS
Static Drain-Source On-State Resistance
(1) RDS(on) 0.075
0.100
VGS=-10V, ID=-2.4A
VGS=-4.5V, ID=-1.2A
Forward Transconductance (3) gfs 2.3 S VDS=-10V,ID=-1.2A
DYNAMIC (3)
Input Capacitance Ciss 825 pF VDS=-25 V, VGS=0V,
f=1MHz
Output Capacitance Coss 250 pF
Reverse Transfer Capacitance Crss 80 pF
SWITCHING(2) (3)
Turn-On Delay Time td(on) 4.4 ns
VDD
=-15V, ID=-2.4A
RG=6.2
, RD=6.2
(Refer to test
circuit)
Rise Time tr6.2 ns
Turn-Off Delay Time td(off) 40 ns
Fall Time tf29.2 ns
Total Gate Charge Qg46 nC VDS=-24V,VGS=-10V,
ID=-2.4A
(Refer to test
circuit)
Gate-Source Charge Qgs 9nC
Gate Drain Charge Qgd 11.5 nC
SOURCE-DRAIN DIODE
Diode Forward Voltage (1) VSD -0.95 V Tj=25°C, IS=-2.4A,
VGS=0V
Reverse Recovery Time (3) trr 30.2 ns Tj=25°C, IF=-2.4A,
di/dt= 100A/
s
Reverse Recovery Charge(3) Qrr 27.8 nC
(1) Measured under pulsed conditions. Width=300
s. Duty cycle
2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
148
ZXM64P03X
PROVISIONAL ISSUE A - JULY 1999
0.1 10 100
2.5 6
0.1 100 0.2 0.8 1.4
+200
0.1 10 100
-VDS - Drain-Source Voltage (V)
Output Characteristics
100m
10
100
-ID - Drain Current (A)
-VGS
10V
VDS=-10V
-I
D
- Drain Current (A)
100
1
100m
-VGS - Gate-Source Voltage (V)
Typical Transfer Characteristics
R
DS(on)
- Drain-Source On-Resistance (
)
1
100m
10m
-ID- Drain Current (A)
On-Resistance v Drain Current
-I
D
- Drain Current (A)
100
1
100m
-VDS - Drain-Source Voltage (V)
Output Characteristics
Normalised R
DS(on)
and V
GS(th)
1.7
Tj - Junction Temperature (°C)
Normalised RDS(on) and VGS(th)
v Temperature
-I
SD
- Reverse Drain Current (A)
100
10m
-VSD - Source-Drain Voltage (V)
Source-Drain Diode Forward Voltage
T=+150°C
T=+25°C
T=+150°C
VGS=-10V
T=+25°C
RDS(on)
ID=-2.4A
VGS=VDS
ID=-250uA
VGS(th)
1
1
8V 6V 5V
4.5V
4V
3.5V
3V
+25°C +150°C
10V 8V 6V 5V
-VGS
4.5V
4V
3.5V
2.5V
3V
1
10
10
5.554.543.53+1000-100
1.5
1.3
1.1
0.9
0.7
0.5
101
Vgs=-4.5V
Vgs=-10V
Vgs=-3V
1.21.00.60.4
10
100m
1
TYPICAL CHARACTERISTICS
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ZXM64P03X
PROVISIONAL ISSUE A - JULY 1999
0.1 1 100 0 10 40
-VDS - Drain Source Voltage (V)
Capacitance v Drain-Source Voltage
0
800
1600
C - Capacitance (pF)
ID=-2.4A
-V
GS
- Gate-Source Voltage (V)
14
0
Q -Charge (nC)
Gate-Source Voltage v Gate Charge
VDS=-24V
Ciss
Coss
Crss
Vgs=0V
f=1MHz
10
1200
400
VDS=-15V
20 30
12
10
4
2
8
6
TYPICAL CHARACTERISTICS
Basic Gate Charge Waveform Gate Charge Test Circuit
Switching Time Waveforms Switching Time Test Circuit
ZXM64P03X
150
PROVISIONAL ISSUE A - JULY 1999
ZXM64P03X
151
PROVISIONAL ISSUE A - JULY 1999
ZXM64P03X
H
E
D
e X 6
A
A1
L
C
1234
5678
B
Conforms to JEDEC MO-187 Iss A
PACKAGE DIMENSIONS
PAD LAYOUT DETAILS
152
DIM Millimetres Inches
MIN MAX MIN MAX
A 1.10 0.043
A1 0.05 0.15 0.002 0.006
B 0.25 0.40 0.010 0.016
C 0.13 0.23 0.005 0.009
D 2.90 3.10 0.114 0.122
e 0.65 BSC 0.0256 BSC
E 2.90 3.10 0.114 0.122
H4.90BSC0.193BSC
L 0.40 0.70 0.016 0.028
q° 0° 6° 0° 6°
Zetex plc.
Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom.
Telephone: (44)161 622 4422 (Sales), (44)161 622 4444 (General Enquiries)
Fax: (44)161 622 44 20
Zet ex GmbH Zetex Inc. Zetex (Asia ) Ltd. These are supported by
Streitfeldstraße 19 47 Mall Drive, Unit 4 3510 Metroplaza, Tower 2 agents and distributors in
D-81673 Münch en Com mack NY 11725 Hing Fong Road, major countries world-wide
German y USA Kwai Fo ng , Hon g K on g
Zet ex plc 1999
Telefon: (49) 89 45 49 49 0 Telephone: (516) 543-7100 Telephone:(852) 26100 611
Fax: (49) 8 9 45 49 49 49 Fax: (516) 864-7630 Fax: (852) 24250 494 Internet:http://www.zetex.com
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any
purpose or fo rm par t of any or de r or cont ract or be regarded as a repre sen ta tio n re l at ing to th e pr od ucts or services concerned. The Company reserves the
right to alter without noti ce the spec ification, design, price or conditio ns of supply of any product or service.
PROVISIONAL ISSUE A - JULY 1999
