2N2322 2N2323 2N2324 2N2325 Central 2N2326 2N2327 2N2328 2N2329 TM Semiconductor Corp. SILICON CONTROLLED RECTIFIER 1.6 AMPS, 25 THRU 400 VOLTS DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2322 Series types are hermetically sealed Silicon Controlled Rectifiers designed for sensing circuit applications and control systems. MARKING: FULL PART NUMBER TO-39 CASE MAXIMUM RATINGS: (TC=25C unless otherwise noted) SYMBOL 22 23 24 25 26 27 28 29 UNITS Peak Repetitive Forward Voltage VDRM 25 50 100 150 200 250 300 400 V Peak Repetitive Reverse Voltage VRRM 25 50 100 150 200 250 300 400 V VRSM 40 75 150 225 300 350 400 500 V Non-Repetitive Peak Reverse Voltage RMS On-State Current 2N23__ IT(RMS) 1.6 A Average On-State Current (TC=85C) IT(AV) 1.0 A Peak One Cycle Surge (t=8.3ms) ITSM 15 A Peak Gate Power PGM 0.10 W PG(AV) 0.01 W Peak Gate Current IGM 0.10 A Peak Gate Voltage VGM 6.0 V Junction Temperature TJ -65 to +125 C Storage Temperature Tstg -65 to +150 C Average Gate Power ELECTRICAL CHARACTERISTICS: (TC=25C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX IDRM, IRRM Rated VDRM, VRRM, RGK=1.0k 5.0 UNITS A IGT VD=6.0V, RL=100 200 A IH VD=6.0V, RGK=1.0k 2.0 mA VGT VD=6.0V, RL=100 0.8 V VTM ITM=1.0A, tp=380s 1.5 V R0 (11-December 2008) Central TM 2N2322 2N2323 2N2324 2N2325 Semiconductor Corp. 2N2326 2N2327 2N2328 2N2329 SILICON CONTROLLED RECTIFIER 1.6 AMPS, 25 THRU 400 VOLTS TO-39 CASE - MECHANICAL OUTLINE LEAD CODE: 1) CATHODE 2) GATE 3) ANODE (case) MARKING: FULL PART NUMBER R0 (11-December 2008)