MAXIMUM RATINGS: (TC=25°C unless otherwise noted) 2N23__
SYMBOL 22 23 24 25 26 27 28 29 UNITS
Peak Repetitive Forward Voltage VDRM 25 50 100 150 200 250 300 400 V
Peak Repetitive Reverse Voltage VRRM 25 50 100 150 200 250 300 400 V
Non-Repetitive Peak Reverse Voltage VRSM 40 75 150 225 300 350 400 500 V
RMS On-State Current IT(RMS) 1.6 A
Average On-State Current (TC=85°C) IT(AV) 1.0 A
Peak One Cycle Surge (t=8.3ms) ITSM 15 A
Peak Gate Power PGM 0.10 W
Average Gate Power PG(AV) 0.01 W
Peak Gate Current IGM 0.10 A
Peak Gate Voltage VGM 6.0 V
Junction Temperature TJ-65 to +125 °C
Storage Temperature Tstg -65 to +150 °C
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN MAX UNITS
IDRM, IRRM Rated VDRM, VRRM, RGK=1.0kΩ 5.0 μA
IGT VD=6.0V, RL=100Ω 200 μA
IHVD=6.0V, RGK=1.0kΩ 2.0 mA
VGT VD=6.0V, RL=100Ω 0.8 V
VTM ITM=1.0A, tp=380μs 1.5 V
2N2322 2N2326
2N2323 2N2327
2N2324 2N2328
2N2325 2N2329
SILICON CONTROLLED RECTIFIER
1.6 AMPS, 25 THRU 400 VOLTS
TO-39 CASE
Central
Semiconductor Corp.
TM
R0 (11-December 2008)
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N2322
Series types are hermetically sealed Silicon
Controlled Rectifiers designed for sensing
circuit applications and control systems.
MARKING: FULL PART NUMBER
Central
Semiconductor Corp.
TM
TO-39 CASE - MECHANICAL OUTLINE
2N2322 2N2326
2N2323 2N2327
2N2324 2N2328
2N2325 2N2329
SILICON CONTROLLED RECTIFIER
1.6 AMPS, 25 THRU 400 VOLTS
R0 (11-December 2008)
LEAD CODE:
1) CATHODE
2) GATE
3) ANODE (case)
MARKING: FULL PART NUMBER
