PCP1102-TD-E - ON SEMICONDUCTOR

PCP1102

No. A1163-1/4

Applications

•DC / DC converters, relay drivers, lamp drivers, motor drivers.

Features

•Adoption of FBET, MBIT processes.

•Large current capacitance.

•Low collector-to-emitter saturation voltage.

•High-speed switching.

•High allowable power dissipation.

Specifications

Absolute Maximum Ratings at Ta=25°C

Parameter Symbol Conditions Ratings Unit

Collector-to-Base Voltage VCBO --150 V

Collector-to-Emitter Voltage VCES --150 V

Collector-to-Emitter Voltage VCEO --150 V

Emitter-to-Base Voltage VEBO --7 V

Collector Current IC--2 A

Collector Current (Pulse) ICP --3 A

Base Current IB--400 mA

Collector Dissipation PC

When mounted on ceramic substrate (450mm

✕0.8mm)

1.3 W

Tc=25°C 3.5 W

Junction Temperature Tj 150 °C

Storage Temperature Tstg --55 to +150 °C

Marking : RE

SANYO Semiconductors

DATA SHEET

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Ordering number : ENA1163

73008EA TI IM TC-00001466

Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate

the performance, characteristics, and functions of the described products in the independent state, and are not

guarantees of the performance, characteristics, and functions of the described products as mounted in the

customer

s products or equipment. To verify symptoms and states that cannot be evaluated in an independent

device, the customer should always evaluate and test devices mounted in the customer

s products or

equipment.

Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to

"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,

communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be

intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace

instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety

equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case

of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee

thereof. If you should intend to use our products for applications outside the standard applications of our

customer who is considering such use and/or outside the scope of our intended standard applications, please

consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our

customer shall be solely responsible for the use.

PCP1102 PNP Epitaxial Planar Silicon Transistor

High-Voltage Switching Applications

PCP1102

No. A1163-2/4

Electrical Characteristics at Ta=25°C

Ratings

Parameter Symbol Conditions min typ max Unit

Collector Cutoff Current ICBO VCB=--80V, IE=0A --1 μA

Emitter Cutoff Current IEBO VEB=--4V, IC=0A --1 μA

DC Current Gain hFE VCE=--5V, IC=--100mA 200 560

Gain-Bandwidth Product fTVCE=--10V, IC=--100mA 70 MHz

Output Capacitance Cob VCB=--10V, f=1MHz 20 pF

Collector-to-Emitter Saturation Voltage VCE(sat)1 IC=--1A, IB=--100mA --200 --400 mV

VCE(sat)2 IC=--0.5A, IB=--50mA --100 --200 mV

Base-to-Emitter Saturation Voltage VBE(sat) IC=--1A, IB=--100mA --0.85 --1.2 V

Collector-to-Base Breakdown Voltage V(BR)CBO IC=--10μA, IE=0A --150 V

Collector-to-Emitter Breakdown Voltage V(BR)CES IC=--100μA, RBE=0Ω--150 V

Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=--1mA, RBE=∞--150 V

Emitter-to-Base Breakdown Voltage V(BR)EBO IE=--10μA, IC=0A --7 V

Turn-ON Time ton See specified Test Circuit. 55 ns

Storage T ime tstg See specified Test Circuit. 840 ns

Fall T ime tfSee specified Test Circuit. 40 ns

Package Dimensions Switching Time Test Circuit

unit : mm (typ)

7008A-003

IC -- VCE

Collector-to-Emitter Voltage, VCE -- V Collector-to-Emitter Voltage, VCE -- V

Collector Current, IC -- A

IC -- VCE

Collector Current, IC -- A

--5mA

--500mA

--2.0

--1.5

--1.0

--0.5

00 --0.2 --0.4 --0.5--0.1 --0.3

IB=0mA

IT13557

--2.0

--1.5

--1.0

--0.5

00 --2 --5--1 --3 --4

--20mA

--40mA

--60mA

--80mA

--500mA

--120mA

IB=0mA

IT13558

--10mA

--5mA

--250mA

--200mA

--160mA

--120mA

--10mA

--20mA

--40mA

--60mA

--80mA

--160mA

--200mA

--250mA

--100mA

VRRL

VCC= --75V

VBE=5V

IC= --10IB1=10IB2= --0.7A

50Ω

INPUT OUTPUT

220μF 470μF

PW=20μsIB1

IB2

D.C.≤1%

1 : Base

2 : Collector

3 : Emitter

SANYO : PCP

2.5

4.0

1.0

1.5

0.5

0.4

3.0

4.5

1.6

0.4

123

1.5

Top View

Bottom View

0.75

PCP1102

No. A1163-3/4

Cob -- VCB

VBE(sat) -- IC

VCE(sat) -- IC

hFE -- IC

IC -- VBE

Collector Current, IC -- A

Base-to-Emitter Voltage, VBE -- V Collector Current, IC -- A

DC Current Gain, hFE

Collector Current, IC -- A

Gain-Bandwidth Product, fT -- MHz

Collector-to-Base Voltage, VCB -- V

Output Capacitance, Cob -- pF

Collector Current, IC -- A

Base-to-Emitter

Saturation Voltage, VBE(sat) -- V

Collector Current, IC -- A

Collector-to-Emitter

Saturation Voltage, VCE(sat) -- V

fT -- IC

Collector Current, IC -- A

Collector-to-Emitter Voltage, VCE -- V

A S O PC -- Ta

Collector Dissipation, PC -- W

Ambient Temperature, Ta -- °C

1.6

1.0

1.2

1.4

1.3

0.8

0.6

0.4

0.2

2006040 80 100 140120 160

IT13519

When mounted on ceramic substrate

(450mm

✕0.8mm)

--0.1

--1.0

2.5

--0.01

--0.01 --0.1

2532372 --1.0

537 2 --10

537 2 --100

537

IC= --2A

10ms

1ms

100ms

DC operation(

Tc=25°C

)

ICP= --3A

IT13565

--1.0

--0.1

Ta=--25°C

75°C

223 5 27--10

32357

--0.01

IC / IB=10

IT13564

25°C

--0.1

23 5 27--1.0

32357

--0.01

--0.1

--1.0

--0.01

Ta=75

--25°

IT13563

IC / IB=10

100

--0.1 372--1.0 25372--100

537

--10

IT13562

100

7253232

--0.01 --0.1 753 --1.0 IT13561

100μs500μs

DC operation (Ta=25°C)

When mounted on ceramic substrate (450mm

✕0.8mm)

VCE= --10V f=1MHz

Ta=75

--25°C

VCE= --5V

IT13560

100

--0.01 325 2

--0.1 73235--1.0

Ta=75°C

25°C

--25

--2.5

--2.0

--1.0

--1.5

--0.5

00 --0.2 --0.4 --0.6 --0.8 --1.2--1.0

IT13559

25°C

<10μs

Tc=25°C

Single pulse

PCP1102

No. A1163-4/4

SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using

products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition

ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.

products described or contained herein.

SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all

semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or

malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise

to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt

safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not

limited to protective circuits and error prevention circuits for safe design, redundant design, and structural

design.

Upon using the technical information or products described herein, neither warranty nor license shall be granted

with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third

party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s

intellectual property rights which has resulted from the use of the technical information and products mentioned

above.

Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed

for volume production.

Any and all information described or contained herein are subject to change without notice due to

product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the

SANYO Semiconductor Co.,Ltd. product that you intend to use.

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without the prior written consent of SANYO Semiconductor Co.,Ltd.

PC -- Tc

Collector Dissipation, PC -- W

Case Temperature, Tc -- °C

4.0

2.5

3.0

3.5

2.0

1.5

1.0

0.5

2006040 80 100 140120 160

IT13520

This catalog provides information as of July, 2008. Specifications and information herein are subject

to change without notice.