SPECIFICATIONS General The PTC 10015 and PTC 10016 Powermode s series 1s of silicon NPN darlington transistors are designed for high voltage, high speed, high power switching applications. These high voltage darlington transistors are ideally suited for applications in switching power supplies, regulators and inverter or converter circuits operating off 240 volt lines. NPN Silicon Power Darlington Transistors 50 Amperes 500 Volts FEATURES @ High Voltage Rating 500 Volts Sustaining @ Glass Passivated Die to Provide Excellent High Temperature Stability @ Overload Short Circuit Rating APPLICATIONS @ High Voltage Switching Power Supplies @ Inverters/Regulators @ Deflection Circuits Control Circuitry 1.050 0.161 (4.09) DIA (26.68) MAX. 0.151 (3.84) . | 2 HOLES , 0.675 (17.65) 1.573 0.655 (16.64) 0.161 Vy 0.181 DIA. 1.197 (30.40) 1.177 (29.90) | 0.225 (5.72)t | 0.205 (5.21) 0.440 (11.18)t 0.420 (10.67) tMEASURED AT SEATING PLANE (39.96) MAX. 0.450 (11.43) 0.875 (22.23) [ 0.250 (6.35) 0.135 MAX. DIA (3.43) MAX. et SEATING > | HH PLANE _~ 0.32 (8.13) MIN. 0.057 (1.45) 51, 0.063 (1.60) Basic dimensions in inches. Dimensions shown in PARENTHESES are in millimeters. Package outline MODIFIED TO-3 LECTRONIC DISTRIBUTORS.SERIES PTC 10015/10016 High Voltage Fast Switching NPN Darlingtons Absolute maximum ratings Thermal and mechanical characteristics Description PTC 10015 | PTC 10016 | Unit | Conditions Description Type | Min. | Typ. | Max. | Unit VCBO Collector-Base Voltage 600 700 Volts RaJC Thermal Resistance dunction to Case All 3 CW VCEO(sus) Collector-Emitter Voltage 400 500 Volts Maximum Lead Temperature for VCEX(sus) Collector-Emitter Voltage 400 500 Volts Soldering Purposes: te from Case 275 C Ic Collector Current Continuous 56 Fy for 5 Seconds Ic Collector Current Peak 75 A tJ,tSTG Operating and Storage Junction 8 , -65 200 Cc IB Base Current Continuous 10 A Temperature Range IB Base Current Peak 15 A Pp Maximum Power Dissipation 250 Ww To = 25C IE Emitter Current Continuous 50 A IE Emitter Current Peak 75 A . . Mnetodt . aot nih Electrical characteristics at 25C (unless otherwise specified) PTC 10015 PTC 10016 ; Description Min. Max. Min. Max. Unit Conditions VCEO(sus) Collector-Emitter Ic =2A L=2mH Sustaining Voltage 400 500 Vv Unclamped VCEX(sus) Collector-Emitter Ic =14 Sustaining Voltage 400 500 v VBE (off) = VCE = Rated VCBO .2 , , \ Collector Cutoff Current = = MA | Veeiot = =1.5 ICEV ollector Cutoff Curren 5 5 mA VCE = Rated VCBO VBE(off) = 1.5V, Tc = + 100C IEBO Emitter Cutoff Current 350 350 mA VEB = 2V y Col F 2.2 2.2 Vv Ic = 204, IB = 1.0A CE(sat) ollector-Emitter 3 " Saturation Voltage 2.6 2.6 v Ic = 204A, IB = 1.0A, Tc = + 100C 5.0 5.0 Vv Ic = 50A, IB = 10A VBE (sat) Base-Emitter . . Saturation Voltage 2.75 2.75 Vv Ic = 204A, IB = 1.0A 25 25 Ic = 20, VCE = 5V h DCC tt Gai FE swenan 10 10 Ic = 40A, VCE = BV VE Diode Forward Voltage 5 5 IF = 20A Is/o Second Breakdown 25 25 VCE = 10V, Collector Current Non Rep. tp = 1s Switching characteristics Description Resistive Load Min. Max. Min. Max. Unit Conditions td Delay Time 03 03 BS ico Ti 10 10 VCC = 250V, Ic = 20A tr Rise Time IB] 1A, IB2 = 4A, ty = 204s ts Storage Time 25 25 BS VBE{off) = 6V tf Fall Time 10 1.0 BS Description Inductive Load, Clamped Min. Max. Min. Max. Unit Conditions tsv Storage Time 3.0 3.0 Velamp = 250V, IC = 208 IB = 1A, IB2 = 4A te Crossover Time 1.0 1.0 VBE(off) = 6V,L = 200uH tev Storage Time 5.6 5.6 Velamp = 250V, TC = + 100C Ip] = 1A, IB2 = 2A, Ic = 20A te Crossover Time 3.0 3.0 VBE(off) = 6V,L = 200H 283