TRANSISTOR PLANT semiconductor technical data
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IL2931Z-9
IL2931T-9 Chip for low dropout positive voltage regulator IC
Features:
- INPUT-TO-OUTPUT VOLTAGE DIFFERENTIAL OF < 0.6V @ 100mA;
- OUTPUT CURRENT IN EXCESS OF 100 mA;
- LOW BIAS CURRENT;
- 60V LOAD DUMP PROTECTION;
- -50V REVERSE TRANSIENT PROTECTION;
- INTERNAL CURRENT LIMITING WITH THERMAL SHUTDOWN;
IDEALLY SULTED FOR BATTERY POWERED EQUIPMENT
Physical Characteristics:
Wafer Diameter ……100 ± 0.5 mm
Wafer thickness ….. 350 ± 20 µm;
Die size …………….. 2.0 x 1.4 mm2;
Scribe width ………...90 µm
Metallization: Top … Al – 1.4 ± 0.2 µm
bottom... Ti-Ni-Ag
Ti - 0.12 ± 0.02µm
Ni – 0.5 ± 0.1µm
Ag – 0.6 ± 0.1µm
Co-ordinates(bottom left co-
ordinates corner), mm
Pad # Characteristics
Bond Pad (µm)
Note X Y Note
1 output 180 x 180 0.070 0.850
2 GNG 180 x 180 1.085 1.200
3 Input 180 x 180 1.060 1.480
4 Input 180 x 180
- The numbers of
Pads are simulated
When packing Pads 3
and 4 are to be
interconnected 1.060 1.740
Co-ordinates
are given
co-ordinates
on
“metallizatio
n layer”
ELECTRICAL CHARACTERISTICS CHIPS ON WAFER
(Vin=16V,Io=10mA,Ci=0.1ìF,Co=100ìF,Tj=25°C, (Note 1).) Norm
Characteristic Symbol Min Max Unit
Output Voltage
Vin=16V, Io=10mA
Vin=10V to 26V, Io≤100mA Vo
8.58
8.15
9.43
9.85 V
Line Regulation
Vin=13V to 20V
Vin=10V to 26V Regline
-
-
18
58 mV
Load Regulation (Io=5.0mA to 100mA) Regload - 98 mV
Bias Current
Vin=16V, Io=100mA
Vin=10V to 26V, Io=10mA IB
-
-
27
0.9 mA
Dropout Voltage
Io=10mA
Io=100mA VI-Vo
-
-
0.19
0.58 V
Over-Voltage Shutdown Threshold Vth(OV) 27 39 V
Output Voltage with Reverse Polarity Input
(Vin=-15V) -Vo
-0.25
- V
Note 1: Low duty cycle pulse techniques are used during test to maintain junction temperature as to ambient as possible.
