BPX43-3/4 - OSRAM Opto Semiconductors

BPX 43

NPN-Silizium-Fototransistor

Silicon NPN Phototransistor

Lead (Pb) Free Product - RoHS Compliant

2007-04-02 1

Wesentliche Merkmale

• Speziell geeignet für Anwendunge n im Bereich

von 450 nm bis 1100 nm

• Hohe Linearität

• Hermetisch dichte Metallbauform (TO-18) mit

Basisanschluss, geeignet bis 125 °C

• Gruppiert lieferbar

Anwendungen

• Lichtschranken für Gleich- und

Wechsellichtbetrieb

• Industrieelektronik

• „Messen/Steuern/Regeln“

Typ

Type Bestellnummer

Ordering Code Fotostrom , Ee= 0.5 mW/cm2, λ = 950 nm, VCE = 5 V

Photocurrent

Ipce (mA)

BPX 43 Q62702P0016 > 0.8

BPX 43-3/4 1)

1) nur eine Gruppe in einer Verpackungseinheit (siehe “Kennwerte”) / only one bin within one packing unit (see

“Characteristics”)

Q62702P3581 1.25…4.0

BPX 43-4 Q62702P0016S004 2.0…4.0

BPX 43-4/5 1) Q62702P3582 > 2.0

BPX 43-5 Q 62702P0016S005 > 3.2

Features

• Especially suitable for applications from

450 nm to 1100 nm

• High linearity

• Hermetically sealed metal package (TO-18)

with base connection suitable up to 125 °C

• Available in groups

Applications

• Photointerrupters

• Industrial electronics

• For control and drive circuits

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BPX 43

Grenzwerte

Maximum Ratings

Bezeichnung

Parameter Symbol

Symbol Wert

Value Einheit

Unit

Betriebs- und Lagertemperatur

Operating and storage temperature range Top; Tstg – 40 … + 125 °C

Kollektor-Emitterspannung

Collector-emitter voltage VCE 50 V

Kollektorstrom

Collector cu rr ent IC50 mA

Kollektorspitzenstrom, τ < 10 μs

Collector surge current ICS 200 mA

Emitter-Basisspannung

Emitter-base voltage VEB 7 V

Verlustleistung, TA = 25 °C

Total power dissipation Ptot 220 mW

Wärmewiderstand

Thermal resistance RthJA 450 K/W

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Kennwerte (TA = 25 °C, λ = 950 nm)

Characteristics

Bezeichnung

Parameter Symbol

Symbol Wert

Value Einheit

Unit

Wellenlänge der max. Fotoempfindlichkeit

Wavelength of max. sensitivity λS max 880 nm

Spektraler Bereich der Fotoempfindlichkeit

S = 10% von Smax

Spectr al range of sen s itivity

S = 10% of Smax

λ450 … 1100 nm

Bestrahlungsempfindliche Fläche

Radiant sensitive area A0.675 mm2

Abmessung der Chipfläche

Dimensions of chip area L × B

L × W1 × 1 mm × mm

Halbwinkel

Half angle ϕ ± 15 Grad

deg.

Fotostrom der Kollektor-Basis-Fotodiode

Photocurrent of collector-base photodiode

Ee = 0.5 mW/cm2, VCB = 5 V

Ev = 1000 Ix, Normlicht/standard light A,

VCB = 5 V

IPCB

μA

Kapazität

Capacitance

VCE = 0 V, f = 1 MHz, E = 0

VCB = 0 V, f = 1 MHz, E = 0

VEB = 0 V, f = 1 MHz, E = 0

CCE

CCB

CEB

Dunkelstrom

Dark current

VCE = 25 V, E = 0

ICEO 20 (≤ 100) nA

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BPX 43

Die Fototransistoren werden nach ihrer Fotoempfindlichkeit gruppiert und mit arabischen Ziffern

gekennzeichnet.

The phototransistors are grouped according to their spectral sensitivity and distinguished by

arabian figures.

Bezeichnung

Parameter Symbol

Symbol Wert

Value Einheit

Unit

-2 -3 -4 -5

Fotostrom, λ = 950 nm

Photocurrent

Ee = 0.5 mW/cm2, VCE = 5 V

Ev = 1000 Ix, Normlicht/standard light A,

VCE = 5 V

IPCE

0.8 …1.6

3.8

1.25 …2.5

6.0

2.0…4.0

9.5

≥ 3.2

15.0

Anstiegszeit/Abfallzeit

Rise and fall time

IC = 1 mA, VCC = 5 V, RL = 1 kΩ

tr, tf912 15 18 μs

Kollektor-Emitter-Sättigungsspannung

Collector-emitter saturation voltage

IC = IPCEmin1) × 0.3

Ee = 0.5 mW/cm2

VCEsat 200 220 240 260 mV

Stromverstärkung

Current gain

Ee = 0.5 mW/cm2, VCE = 5 V

110 170 270 430 –

1) IPCEmin ist der minimale Fotostrom der jeweiligen Gruppe.

1) IPCEmin is the min. photocurrent of th e specified group.

IPCE

IPCB

------------

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Relative Spectral Sensitivity

Srel = f (λ)

Output Characteristics

IC = f (VCE), IB = Parameter

Photocurrent

IPCE/IPCE25o = f (TA), VCE = 5 V

Photocurrent

IPCE = f (Ee), VCE = 5 V

Output Characteristics

IC = f (VCE), IB = Parameter

Dark Current

ICEO/ICEO25o = f (TA), VCE = 25 V, E = 0

Total Power Dissipation

Ptot = f (TA)

Dark Current

ICEO = f (VCE), E = 0

Collector-Emitter Capacitance

CCE = f (VCE), f = 1 MHz, E = 0

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Collector-Base Capacitance

CCB = f (VCB), f = 1 MHz, E = 0

Directional Characteristics

Srel = f (ϕ)

Emitter-Base Capacitance

CEB = f (VEB), f = 1 MHz, E = 0

BPX 43

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Maßzeichnung

Package Outlines

Maße in mm (inch) / Dimensions in mm (inch)

ø5.6 (0.220)

ø5.3 (0.209)

2.54 (0.100)

spacing

ø4.8 (0.189)

E C B

(2.7 (0.106))

5.1 (0.201)

4.8 (0.189)

14.5 (0.571)

12.5 (0.492)

ø0.45 (0.018)

Radiant

GMOY6019

ø4.6 (0.181)

5.4 (0.213)

6.2 (0.244)

Chip position sensitive area

0.9 (0.035)

1.1 (0.043)

0.9 (0.035)

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BPX 43

Lötbedingungen

Soldering Conditions

Wellenlöten (TTW) (nach CECC 00802)

TTW Soldering (acc. to CECC 00802)

Published by

OSRAM Opto Semiconductors GmbH

Wernerwerkstrasse 2, D-93049 Regensburg

www.osram-os.com

The information describes the type of component and shall not be considered as assured characteristics.

Terms of delivery and rights to change design reserved. Due to technical requirements components may contain

dangerous substances. For information on the types in question please contact our Sales Organization.

Packing

Please use the recycling operators known to you. We can also help you – get in touch with your nearest sales office.

By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing

material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs

incurred.

Components used in life-support devices or systems must be expressly authorized for such purpose! Critical

components 1 , may only be used in life-support dev ices or systems 2 with the expres s written approval of OSRAM OS.

1 A critical componen t is a component usedin a life-support device or syste m whose failure can reasonably be expected

to cause the failure of that life-support devic e or system, or to a ffect its safety or e ffectiveness of that device or system.

2 Life support devices or syste ms are intended (a) to be implanted in the human body, o r (b) to support and/or maintain

and sustain human life. If they fail, it is reasonable to assume that the health of the user may be en dangered.

OHLY0598

050 100 150 200 250

100

150

200

250

300

235 C

10 s

C... 260

1. Welle

1. wave

2. Welle

2. wave

5 K/s 2 K/s

ca 200 K/s

CC... 130100

2 K/s Zwangskühlung

forced cooling

Normalkurve

standard curve

Grenzkurven

limit curves