tt a St N-CHANNEL IRFM110 POWER MOSFETS FEATURES SOT-223 + Lower Rosion) * Improved inductive ruggedness + Fast switching times Rugged polysilicon gate cell structure + Lower input capacitance * Extended safe operating area + Improved high temperature reliability 1. Gate 2. Drain 3. Source PRODUCT SUMMARY Part Number BVpss Rpsjon) Ib IRFM110 100V 0.540 1.5A ABSOLUTE MAXIMUM RATINGS Characteristic Symbol IRFM110 Unit Drain-Source Voltage (1) Voss 100 Vde Drain-Gaie Voltage (Ras=1.0M2 \(1) VoGR 100 Vde Gate-Source Voltage Vas +20 Vde Continuous Drain Current Tc=25C Ip 1.5 Adc Continuous Drain Current Tc=100C lo 0.96 Adc Drain Current - Pulsed (3) IDM 12 Adc Single Pulsed Avalanche Energy (4) Eas 150 mJ Avalanche Current las 1.5 A Total Power Dissipation at Tc=25 C Pp 3.1 Watts Derate above 25 C 0.025 w/C Operating and Storage Tu, TsTG ~55 to +150 C Junction Temperature Range Maximum Lead Temp. for Soldering : Purposes, 1/8" from case for 5 seconds Tm $00 c Notes : (1) Tu=25C to 150C (2) Pulse test : Pulse width<300zs, Duty Cycle<2% (3) Repetitive rating : Pulse width limited by junction temperature (4) L=25mH, Vad=25V, Re=250, , Starting Ts=25C Mm 79b4R4e O0295e4 7TT ELECTRONICSN-CHANNEL IRFM110 POWER MOSFETS ELECTRICAL CHARACTERISTICS (Tc=25C unless otherwise specified) Symbol Characteristic Min | Typ | Max | Units Test Conditions BVoss | Drain-Source Breakdown Voltage 100 - - V_ | Ves=0V, [p=2500A Vesitth) | Gate Threshold Voltage 2.0 - 4.0 V_ | Vos=Vas, In=2502A Iess | Gate-Source Leakage Forward - : 100 | nA | Vos=20V lass | Gate-Source Leakage Reverse - - | -100] nA | Voes=-20V loss Zero Gate Voltage Drain Current - - 250 | #A | Vps=Max. Rating, Ves=0V - - | 1000] #A | Vos=0.8 Max. Rating, Ves=0V, To=150C Rosjon) | Static Drain-Source On Resistance(2) - | - | 054) 2 | Vas=10V, ID=0.9A fs Forward Transconductance (2) 11 - - U | Vos=50V, Ip=0.9A Ciss Input Capacitance - 180 - pF Coss | Output Capacitance - 81 - PF | Vas=0V, Vos=25V, f=1MHz Crss Reverse Transfer Capacitance - 15 - pF tion) | Turn-On Delay Time - | 69] - | MS | Vp0=0.5 BVoss, ID=5.6A, Zo=240 tr __|_Rise Time - | 16 | - | MS | (MOSFET switching times are essentially tajor) | Turn-Off Delay Time -_| 15 | - | MS | independent of operating temperature) tf Fall Time - 9.4 - ns Qq | Total Gate Charge - - | 83 | nC | Ves=10V, In=5.6A, Vos=0.8 Max. Rating (Gate-Source Plus Gate-Drain} (Gate charge is essentially independent of Qgs | Gate-Source Charge - | 23 nC | operating temperature) Qad Gate-Drain ("Miller") Charge - 3.8 nc THERMAL RESISTANCE Symbol Characteristics IRFM110 Units Remark Rttuc | Juntion-to-case MAX 40 KAW Rina Junction-to-Ambient MAX 60 KW | Free Air Operation Notes : (1) Tu=25C to 150C (2) Pulse test : Pulse width < 300s, Duty Cycle<2% (3) Repetitive rating : Pulse width limited by max. junction temperature 990 at MB 7964142 9029529 635 a ELECTRONICSa matte N-CHANNEL IRFM110 POWER MOSFETS SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol Characteristic Min | Typ; Max | Units Test Conditions ti Cc tt is | Continuous Source Curren - | - | 15] a | Modified MOSFET : (Body Diode) symbol showing the () Pulse Source Current integral reverse / ism . - | - | 12 | A | P-N junction rectifier (Body Diode) (3) Vsp Diode Forward Voltage (2) - - 2.5 V_ | TJ=28C, Is=1.5A, Vas=0V ter Reverse Recovery Time - 100; 200 | ns | Ty=25C, IF=1.5A, dlF/dt=100A/S Notes : (1) Tu=25C to150C (2) Pulse test : Pulse width < 300us, Duty Cycle<2% (3) Repetitive rating : Pulse width limited by max. junction temperature - an ELECTRONICS 991 Me 7964142 0029530 357 a