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Is Now Part of
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of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right
to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
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Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
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©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001
BD440/442
PNP Epitaxial Si licon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Electrical Characteristics TC=25°C unless otherwise noted
* Pulse Test: PW=300µs, duty Cycle=1.5% Pulsed
Symbol Parameter Value Units
VCBO Collector-Base Voltag e : BD440
: BD442 - 60
- 80 V
V
VCES Collector-Emitter Voltage: BD440
: BD442 - 60
- 80 V
V
VCEO Collector-Emitter Voltage: BD440
: BD442 - 60
- 80 V
V
VEBO Emitter-Base Voltage - 5 V
IC Collector Current (DC) - 4 A
ICP *Collector Current (Pulse) - 7 A
IB Base Current - 1 A
PC Collector Dissipation (TC=25°C) 36 W
TJ Junction Temperature 150 °C
TSTG Storage Tem perature - 65 ~ 1 50 °C
Symbol Parame ter Test Condit i on Min. Typ. Max. Units
VCEO(sus) Collector- Emitter Sust ainin g Voltage
: BD440
: BD442 IC = - 100mA, IB = 0 -60
-80 V
V
ICBO Collector Cut-off Current : BD440
: BD442 VCB = - 6 0V, IE = 0
VCB = - 8 0V, IE = 0 - 100
- 100 µA
µA
ICES Collector Cut-off Current : BD440
: BD442 VCE = - 6 0V, VBE = 0
VCE = - 8 0V, VBE = 0 - 100
- 100 µA
µA
IEBO Emitter Cut-off Current VEB = - 5V, IC = 0 - 1 mA
hFE * DC Current Gain : BD440
: BD442
: BD440
: BD442
: BD440
: BD442
VCE = - 5 V, IC = - 10mA
VCE = - 1V, IC = - 500mA
VCE = - 1 V, IC = - 2A
20
15
40
40
25
15
140
140
140
140
VCE(sat) * Collector-Emitter Saturation V oltage IC = - 2A, IB = - 0.2 A - 0.8 V
VBE(on) * Base-Emitter ON Voltage VCE = - 5 V, IC = - 10mA
VCE = -1 V, IC = - 2A -0.58 - 1.5 V
V
fT Current G ain Bandwidth Pro duct VCE = - 1V, IC = - 250mA 3 MHz
BD440/442
Medium Power Linear and Switching
Applications
Complement to BD439, BD441 respectively
1TO-126
1. Emitter 2.Collector 3.Base
©2001 Fairchild Semiconductor Corporation
BD440/442
Rev. A1, June 2001
Typical Characteristics
Figure 1. DC current Gain Figure 2. Collector-Emitter Saturation Voltage
Figure 3. Base-Emitter On Voltage Figure 4. Collector-Base Capacitance
Figure 5. Safe Operating Area Figure 6. Power Derating
-0.01 -0.1 -1 -10
1
10
100
1000
VCE = -1V
hFE, DC CURRENT GAIN
IC[A], COLLECTOR CURRENT
-0.1 -1 -10
-0.01
-0.1
-1
IC = 10 IB
VCE(sat)[V], SATURATION VOLTAGE
IC[A], COLLECTOR CURRENT
-0.0 -0.3 -0.5 -0.8 -1.0 -1.3 -1.5 -1.8 -2.0
-0.0
-0.5
-1.0
-1.5
-2.0
-2.5
-3.0
-3.5
-4.0
-4.5
-5.0
VCE = -1 V
IC[A], COLLECTOR CURRENT
VBE[V], BASE-EMITTER VOLTAGE
-0.1 -1 -10 -100
1
10
100
1000
CCBO(pF), COLLECTOR BASE CAPACITANCE
VCB[V], COLLECTOR BASE VOLTAGE
-1 -10 -100
-0.1
-1
-10
1µs
10µs
100
µ
s
1ms
10ms
IC MAX. (Pulsed)
BD442
BD440
DC
IC Max. (Continuous)
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITT ER VOLTAGE
0 25 50 75 100 125 150 175 200
0
6
12
18
24
30
36
42
48
PC[W], POWER DISSIPATION
TC[oC], CASE TEMPERATURE
Package Demensions
©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001
BD440/442
Dimensions in Millimeters
3.25 ±0.20
8.00 ±0.30
ø3.20 ±0.10
0.75 ±0.10
#1
0.75 ±0.10
2.28TYP
[2.28±0.20] 2.28TYP
[2.28±0.20]
1.60 ±0.10
11.00 ±0.20
3.90 ±0.10
14.20MAX
16.10 ±0.20
13.06 ±0.30
1.75 ±0.20
(0.50)
(1.00)
0.50 +0.10
–0.05
TO-126
©2001 Fairchild Semiconductor Corporation Rev. H2
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regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
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