DATA SHEET
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
PHOTOCOUPLER
PS2502-1,-2,-4,PS2502L-1,-2,-4
HIGH ISOLATION VOLTAGE
DARLINGTON TRANSISTOR TYPE
MULTI PHOTOCOUPLER SERIES NEPOC Series
Document No. PN10226EJ01V0DS (1st edition)
(Previous No. P11303EJ5V0DS00)
Date Published February 2003 CP(K)
Printed in Japan
NEC Compound Semiconductor Devices 1988, 2003
The mark
shows major revised poi nts.
DESCRIPTION
The PS2502-1, -2, -4 and PS2502L-1, -2, -4 are optically coupled isolators containing a GaAs light emitting diode
and an NPN silicon darlington connected phototransistor.
The PS2502-1, -2, -4 are in a plastic DIP (Dual In-line Package) and the PS2502L-1, -2, -4 are lead bending type
(Gull-wing) for surface mount.
FEATURES
High isolation voltage (BV = 5 000 Vr.m.s.)
High current transfer ratio (CTR = 2 000 % TYP.)
High-speed switching (tr, tf = 100
µ
s TYP.)
Ordering number of tape product: PS2502L-1-E3, E4, F3, F4, PS2502L-2-E3, E4
Safety standards
UL approved: File No. E72422 (S)
APPLICATIONS
Power supply
Telephone/FAX
FA/OA equipment
Programmable logic controller
Data Sheet PN10226EJ01V0DS
2
PS2502-1,-2,-4,PS2502L-1,-2,-4
PACKAGE DIMENSIONS (UNIT : mm)
DIP Type (New package)
PS2502-1TOP VIEW
3.5±0.3
4.15±0.43.2±0.4
2.54
1.25±0.15 0.50±0.10
0.25
M
4.6±0.35
6.5±0.5
0 to 15˚
7.62
0.25
+0.1
–0.05
12
431. Anode
2. Cathode
3. Emitter
4. Collector
Caution New package 1-ch only
DIP Type
PS2502-4
PS2502-1TOP VIEW
TOP VIEW
9.7±0.5
6.5±0.5
3.5±0.3
4.15±0.43.3±0.5
2.54
1.25±0.15 0.50±0.10
0.25
M
0 to 15˚
7.62
0.25
+0.1
–0.05
PS2502-2
4.6±0.5
6.5±0.5
3.5±0.3
4.15±0.43.3±0.5
2.54
1.25±0.15 0.50±0.10
0.25
M
0 to 15˚
7.62
0.25
+0.1
–0.05
19.8±0.5
6.5±0.5
0 to 15˚
7.62
0.25
+0.1
–0.05
3.5±0.3
4.15±0.43.3±0.5
2.54
1.25±0.15 0.50±0.10
0.25
M
TOP VIEW
12
43
1234
8765
12345678
16 15 14 13 12 11 10 9
1, 3. Anode
2, 4. Cathode
5, 7. Emitter
6, 8. Collector
1. Anode
2. Cathode
3. Emitter
4. Collector
1, 3, 5, 7. Anode
2, 4, 6, 8. Cathode
9, 11, 13, 15. Emitter
10, 12, 14, 16. Collector
Data Sheet PN10226EJ01V0DS 3
PS2502-1,-2,-4,PS2502L-1,-2,-4
Lead Bending Type (New package)
PS2502L-1
TOP VIEW
0.25
M
4.6±0.35
6.5±0.5
3.5±0.3
2.54
1.25±0.15
0.15
0.9±0.25
9.60±0.4
0.25+0.1
–0.05
0.1+0.1
–0.05
12
431. Anode
2. Cathode
3. Emitter
4. Collector
Caution New package 1-ch only
Lead Bending Type
PS2502L-2
TOP VIEW
PS2502L-1
TOP VIEW
PS2502L-4 TOP VIEW
4.6±0.5
6.5±0.5
0.25
M
3.5±0.3
2.54
1.25±0.15
0.15
0.9±0.25
9.60±0.4
0.25
+0.1
–0.05
0.1
+0.1
–0.05
9.7±0.5
6.5±0.5
2.54
1.25±0.15
0.25
M
0.15
3.5±0.3
0.9±0.25
9.60±0.4
0.25
+0.1
–0.05
0.1
+0.1
–0.05
19.8±0.5
6.5±0.5
2.54
1.25±0.15
0.25
M
3.5±0.3
0.15
0.9±0.25
9.60±0.4
0.25
+0.1
–0.05
0.1
+0.1
–0.05
12
43
1234
8765
12345678
16 15 14 13 12 11 10 9
1, 3. Anode
2, 4. Cathode
5, 7. Emitter
6, 8. Collector
1. Anode
2. Cathode
3. Emitter
4. Collector
1, 3, 5, 7. Anode
2, 4, 6, 8. Cathode
9, 11, 13, 15. Emitter
10, 12, 14, 16. Collector
Data Sheet PN10226EJ01V0DS
4
PS2502-1,-2,-4,PS2502L-1,-2,-4
MARKING EXAMPLE
2502
MD003 PS2502-2
MD003
D
E
F
PS2502-1 PS2502-2, -4
Assembly Lot
Week Assembled
Year Assembled
(Last 1 Digit)
In-house Code
CTR Rank Code
No. 1 pin
Mark
Package
New PKG
Standard PKG
Made in Japan Made in Taiwan
No. 1 pin
Mark
M
DF
Week Assembled
Year Assembled
(Last 1 Digit)
In-house Code
CTR Rank Code
Package
New PKG
Standard PKG
Made in Japan Made in Taiwan
003
M003
Country Assembled
Type Number
Assembly Lot
DD
H
Data Sheet PN10226EJ01V0DS 5
PS2502-1,-2,-4,PS2502L-1,-2,-4
ORDERING INFORMATION
Part Number Package Packi ng Styl e Applic at i on Part Number*1
PS2502-1 4-pin DIP Magazine c ase 100 pcs PS2502-1
PS2502L-1
PS2502L-1-E3 Embossed Tape 1 000 pcs/reel
PS2502L-1-E4
PS2502L-1-F3 Embossed Tape 2 000 pcs/reel
PS2502L-1-F4
PS2502-2 8-pin DIP Magazine c ase 45 pcs PS2502-2
PS2502L-2
PS2502L-2-E3 Embossed Tape 1 000 pcs/reel
PS2502L-2-E4
PS2502-4 16-pin DIP Magazine c ase 20 pcs PS2502-4
PS2502L-4
*1 For the application of the Safety Standard, following part number should be used.
ABSOLUTE MAXIMUM RATINGS (TA = 25 °
°°
°C, unless otherwise specified)
Parameter Symbol Ratings Unit
PS2502-1,
PS2502L-1 PS2502-2,-4
PS2502L-2,-4
Diode Reverse V ol tage VR6V
Forward Current (DC) IF80 mA
Power Dissipati on Derating
PD/°C 1.5 1.2 mW/°C
Power Dissipati on PD150 120 mW/ch
Peak Forward Current*1 IFP 1A
Transistor Collector to Emitter Voltage VCEO 40 V
Emitter to Collector Voltage VECO 6V
Collector Current IC200 160 mA/ch
Power Dissipati on Derating
PC/°C 2.0 1.6 mW/°C
Power Dissipati on PC200 160 mW/ch
Isolat i on Voltage*2 B V 5 000 Vr.m. s.
Operating Am bi ent Tem perature TA–55 to +100 °C
Storage Temperat ure Tstg –55 to +150 °C
*1 PW = 100
µ
s, Duty Cycle = 1 %
*2 AC voltage for 1 minute at TA = 25 °C, RH = 60 % between input and output
Data Sheet PN10226EJ01V0DS
6
PS2502-1,-2,-4,PS2502L-1,-2,-4
ELECTRICAL CHARACTERISTICS (TA = 25 °
°°
°C)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Diode Forward Voltage VFIF = 10 mA 1.17 1.4 V
Reverse Current I RVR = 5 V 5
µ
A
Terminal Capaci tance CtV = 0 V, f = 1.0 MHz 50 pF
Transistor Collector to E m i t ter Dar k
Current ICEO VCE = 40 V, I F = 0 m A 400 nA
Coupled Current Transfer Ratio
(IC/IF)*1 CTR IF = 1 mA, VCE = 2 V 200 2 000 %
Collector Saturatio n
Voltage VCE(sat) IF = 1 mA, IC = 2 mA 1.0 V
Isolat i on Resist ance RI-O VI-O = 1.0 kVDC 1011
Isolat i on Capacitanc e CI-O V = 0 V, f = 1. 0 M Hz 0.5 pF
Rise Time*2 trVCC = 10 V, I C = 2 mA, RL = 100 100
µ
s
Fall Time*2 tf100
*1 CTR rank (only PS2502-1, PS2502L-1)
K : 2 000 to (%)
L : 700 to 3 400 (%)
M : 200 to 1 000 (%)
*2 Test circuit for switching time
V
CC
V
OUT
R
L
= 100
50
I
F
Pulse Input
PW = 1 ms
Duty Cycle = 1/10
Data Sheet PN10226EJ01V0DS 7
PS2502-1,-2,-4,PS2502L-1,-2,-4
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise specified)
150
100
50
02550
75 100 125 150
0.5
0.1
1
5
10
50
100
0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 0
20
40
60
80
100
120
140
160
246810
5 mA
2 mA
1 mA
I
F
= 0.5 mA
10
1
100
1000
10 000
–50 –25 0 25 50 75 100 0.2
0.5
1
5
10
200
50
0.4
100
0.6 0.8 1.0 1.2 1.4 1.6
5 mA
2 mA
1 mA
0.5 mA
I
F
= 0.1 mA
0.2 mA
1.5 mW/˚C
1.2 mW/˚C
PS2502-1
PS2502L-1
PS2502-2
PS2502L-2
PS2502-4
PS2502L-4
0 ˚C
–25 ˚C
–55 ˚C
V
CE
= 2 V
5 V
10 V
24 V
40 V
+60 ˚C
+25 ˚C
T
A
= +100 ˚C
Diode Power Dissipation P
D
(mW)
Transistor Power Dissipation P
C
(mW)
Ambient Temperature T
A
(˚C)
Forward Current I
F
(mA)
Forward Voltage V
F
(V)
Collector Current I
C
(mA)
Collector to Emitter Voltage V
CE
(V)
Collector to Emitter Dark Current I
CEO
(nA)
Collector Saturation Voltage V
CE(sat)
(V)
Ambient Temperature T
A
(˚C)
Ambient Temperature T
A
(˚C)
DIODE POWER DISSIPATION vs.
AMBIENT TEMPERATURE TRANSISTOR POWER DISSIPATION
vs. AMBIENT TEMPERATURE
FORWARD CURRENT vs.
FORWARD VOLTAGE COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
COLLECTOR TO EMITTER DARK
CURRENT vs. AMBIENT TEMPERATURE COLLECTOR CURRENT vs.
COLLECTOR SATURATION VOLTAGE
Collector Current I
C
(mA)
150
100
50
02550
75 100 125 150
2 mW/˚C
1.6 mW/˚C
200
PS2502-2
PS2502L-2
PS2502-4
PS2502L-4
PS2502-1
PS2502L-1
Data Sheet PN10226EJ01V0DS
8
PS2502-1,-2,-4,PS2502L-1,-2,-4
1.4
25
1.2
1.0
0.8
0.6
0.4
0.2
–50 0–25 50 75 100
8 000
0
1 000
2 000
3 000
4 000
5 000
6 000
7 000
V
CE
= 2 V
0.1 0.5 1 5 10 30
1 000
500
100
50
10
5
2100
50 500 1 k 5 k
V
CC
= 5 V,
I
C
= 2 mA,
CTR = 2 280 %
t
f
500
50
1 k300
10
100
1 000
5 000
10 000
5 k 10 k 50 k 510
0.2 0.5 1 2 20 50 100 200
I
F
= 1 mA,
V
CE
= 2 V
–20
–15
–10
–5
0
1 500
2 000
2 500
3 000
0
500
1 000
V
CE
= 2 V
50 10010 500
R
L
= 100
V
CC
= 5 V,
I
F
= 1 mA,
CTR = 2 280 %
t
d
t
s
30
500 100 k
t
f
t
s
t
r
t
d
t
r
Normalized to 1.0
at T
A
= 25 ˚C,
I
F
= 1 mA, V
CE
= 2 V
Forward Current I
F
(mA)
Ambient Temperature T
A
(˚C)
Load Resistance R
L
()
Frequency f (kHz)
Normalized Current Transfer Ratio CTR
Current Transfer Ratio CTR (%)
Normalized Gain G
V
Load Resistance R
L
()
Switching Time t ( s)
µ
NORMALIZED CURRENT TRANSFER
RATIO vs. AMBIENT TEMPERATURE CURRENT TRANSFER RATIO vs.
FORWARD CURRENT
SWITCHING TIME vs.
LOAD RESISTANCE
SWITCHING TIME vs.
LOAD RESISTANCE FREQUENCY RESPONSE
Switching Time t ( s)
µ
Forward Current I
F
( A)
Current Transfer Ratio CTR (%)
CURRENT TRANSFER RATIO vs.
FORWARD CURRENT
µ
Sample A
B
C
D
Sample A
B
C
D
Data Sheet PN10226EJ01V0DS 9
PS2502-1,-2,-4,PS2502L-1,-2,-4
10 10
2
10
3
10
4
10
5
10
6
0.6
0
0.2
0.4
0.8
1.0
1.2
T
A
= 25
o
C
T
A
= 60
o
C
Time (Hr)
CTR (Relative Value)
LONG TERM CTR DEGRADATION
I
F
= 1 mA
Remark The graphs indicate nominal characteristics.
Data Sheet PN10226EJ01V0DS
10
PS2502-1,-2,-4,PS2502L-1,-2,-4
TAPING SPECIFICATIONS (UNIT : mm)
Tape Direction
Outline and Dimensions (Tape)
Outline and Dimensions (Reel)
PS2502L-1-E3 PS2502L-1-E4
1.55±0.1
2.0±0.1
4.0±0.1
1.75±0.1
4.5 MAX.
4.0±0.1
0.4
5.3±0.1
8.0±0.1
7.5±0.1
16.0±0.3
10.3±0.1
1.5
+0.1
–0
φ
Packing: 1 000 pcs/reel
2.0±0.5
R 1.0
13.0±0.2
φ
21.0±0.8
φ
254±2.0
80.0±1.0
2.0±0.5
φ
φ
15.9 to 19.4
Outer edge of
flange
21.5±1.0
17.5±1.0
Data Sheet PN10226EJ01V0DS 11
PS2502-1,-2,-4,PS2502L-1,-2,-4
Tape Direction
Outline and Dimensions (Tape)
Outline and Dimensions (Reel)
PS2502L-1-F3 PS2502L-1-F4
1.55±0.1
2.0±0.1
4.0±0.1
1.75±0.1
4.5 MAX.
4.0±0.1
0.4
5.3±0.1
8.0±0.1
7.5±0.1
16.0±0.3
10.3±0.1
1.5
+0.1
–0
φ
Packing: 2 000 pcs/reel
2.0±0.5
R 1.0
13.0±0.2
φ
21.0±0.8
φ
330±2.0
100±1.0
2.0±0.5
φ
φ
15.9 to 19.4
Outer edge of
flange
21.5±1.0
17.5±1.0
Data Sheet PN10226EJ01V0DS
12
PS2502-1,-2,-4,PS2502L-1,-2,-4
Tape Dimesion
PS2502L-2-E3 PS2502L-2-E4
Outline and Diumensions (Tape)
1.55±0.1
2.0±0.1
4.0±0.1
1.75±0.1
4.5 MAX.
10.4±0.1
12.0±0.1
Outline and Dimensions (Reel)
Packing: 1 000 pcs/reel
330±2.0
100±1.0
2.0±0.5
13.0±0.2
R 1.0 21.0±0.8
2.0±0.5
1.5
+0.1
–0
7.5±0.1
10.3±0.1
16.0±0.3
4.0±0.1
0.3
15.9 to 19.4
Outer edge of
flange
17.5±1.0
21.5±1.0
Data Sheet PN10226EJ01V0DS 13
PS2502-1,-2,-4,PS2502L-1,-2,-4
NOTES ON HANDLING
1. Recommended soldering conditions
(1) Infrared reflow soldering
Peak reflow temperature 260°C or below (package surface temperature)
Time of peak reflow temperature 10 seconds or less
Time of temperature higher than 220°C 60 seconds or less
Time to preheat temperature from 120 to 180°C 120±30 s
Number of reflows Three
Flux Rosin flux containing small amount of chlorine (The flux with a
maximum chlorine content of 0.2 Wt% is recommended.)
120±30 s
(preheating)
220˚C
180˚C
Package Surface Temperature T (˚C)
Time (s)
Recommended Temperature Profile of Infrared Reflow
(heating)
to 10 s
to 60 s
260˚C MAX.
120˚C
(2) Wave soldering
Temperature 260°C or below (molten solder temperature)
Time 10 seconds or less
Preheating conditions 120°C or below (package surface temperature)
Number of times One (Allowed to be dipped in solder including plastic mold portion.)
Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine
content of 0.2 Wt% is recommended.)
(3) Cautions
•Fluxes
Avoid removing the residual flux with freon-based and chlorine-based cleaning solvent.
2. Cautions regarding noise
Be aware that when voltage is applied suddenly between the photocoupler’s input and output or between
collector-emitters at startup, the output side may enter the on state, even if the voltage is within the absolute
maximum ratings.
Data Sheet PN10226EJ01V0DS
14
PS2502-1,-2,-4,PS2502L-1,-2,-4
USAGE CAUTIONS
1. Protect against static electricity when handling.
2. Avoid storage at a high temperature and high humidity.
Data Sheet PN10226EJ01V0DS 15
PS2502-1,-2,-4,PS2502L-1,-2,-4
M8E 00. 4 - 0110
The information in this document is current as of February, 2003. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or
data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all
products and/or types are available in every country. Please check with an NEC sales representative
for availability and additional information.
No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of
third parties by or arising from the use of NEC semiconductor products listed in this document or any other
liability arising from the use of such products. No license, express, implied or otherwise, is granted under any
patents, copyrights or other intellectual property rights of NEC or others.
Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of customer's equipment shall be done under the full
responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third
parties arising from the use of these circuits, software and information.
While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers
agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize
risks of damage to property or injury (including death) to persons arising from defects in NEC
semiconductor products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment, and anti-failure features.
NEC semiconductor products are classified into the following three quality grades:
"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products
developed based on a customer-designated "quality assurance program" for a specific application. The
recommended applications of a semiconductor product depend on its quality grade, as indicated below.
Customers must check the quality grade of each semiconductor product before using it in a particular
application.
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and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots
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support systems and medical equipment for life support, etc.
The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's
data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not
intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness
to support a given application.
(Note)
(1) "NEC" as used in this statement means NEC Corporation, NEC Compound Semiconductor Devices, Ltd.
and also includes its majority-owned subsidiaries.
(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for
NEC (as defined above).
NEC Compound Semiconductor Devices Hong Kong Limited
Hong Kong Head Office
Taipei Branch Office
Korea Branch Office
TEL: +852-3107-7303
TEL: +886-2-8712-0478
TEL: +82-2-558-2120
FAX: +852-3107-7309
FAX: +886-2-2545-3859
FAX: +82-2-558-5209
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TEL: +49-211-6503-01 FAX: +49-211-6503-487
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TEL: +1-408-988-3500 FAX: +1-408-988-0279
0302
NEC Compound Semiconductor Devices, Ltd.
5th Sales Group, Sales Division TEL: +81-44-435-1588 FAX: +81-44-435-1579 E-mail: salesinfo@csd-nec.com
For further information, please contact
PS2502-1,-2,-4,PS2502L-1,-2,-4
SAFETY INFORMATION ON THIS PRODUCT
Caution GaAs Products The product contains gallium arsenide, GaAs.
GaAs vapor and powder are hazardous to human health if inhaled or inges ted.
Do not destroy or burn the product.
Do not cut or cleave of f any part of the product .
Do not crush or chemic al l y di ssolve the product .
Do not put the product in t he m outh.
Follow related l aws and ordinances for dispos al . The product should be exc l uded from general
industri al was te or household garbage.