APT20GF120KR - Advanced Power Technology

GCE

TO-220

G

C

E

PRELIMINARY

MIN TYP MAX

1200

-15

4.5 5.5 6.5

2.7 3.2

3.3 3.9

0.8

5.0

±100

Characteristic / Test Conditions

Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 0.8mA)

Collector-Emitter Reverse Breakdown Voltage (VGE = 0V, IC = 50mA)

Gate Threshold Voltage (VCE = VGE, IC = 350µA, Tj = 25°C)

Collector-Emitter On Voltage (VGE = 15V, IC = 15A, Tj = 25°C)

Collector-Emitter On Voltage (VGE = 15V, IC = 15A, Tj = 125°C)

Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 25°C)

Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 125°C)

Gate-Emitter Leakage Current (VGE = ±20V, VCE = 0V)

Symbol

BVCES

RBVCES

VGE(TH)

VCE(ON)

ICES

IGES

MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.

STATIC ELECTRICAL CHARACTERISTICS

UNIT

Volts

mA

nA

Symbol

VCES

VCGR

VEC

VGE

IC1

IC2

ICM1

ICM2

EAS

PD

TJ,TSTG

TL

Parameter

Collector-Emitter Voltage

Collector-Gate Voltage (RGE = 20KΩ)

Emitter-Collector Voltage

Gate-Emitter Voltage

Continuous Collector Current @ TC = 25°C

Continuous Collector Current @ TC = 90°C

Pulsed Collector Current 1 @ TC = 25°C

Pulsed Collector Current 1 @ TC = 90°C

Single Pulse Avalanche Energy 2

Total Power Dissipation

Operating and Storage Junction Temperature Range

Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.

APT20GF120KR

1200

15

±20

32

20

64

40

22

200

-55 to 150

300

UNIT

Volts

Amps

mJ

Watts

°C

052-6205 Rev C

APT20GF120KR

1200V 32A

The Fast IGBT is a new generation of high voltage power IGBTs. Using

Non-Punch Through Technology the Fast IGBT offers superior ruggedness,

fast switching speed and low Collector-Emitter On voltage.

• Low Forward Voltage Drop • High Freq. Switching to 20KHz

• Low Tail Current • Ultra Low Leakage Current

• Avalanche Rated • RBSOA and SCSOA Rated

Fast IGBT

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

USA

405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388-0364

EUROPE

Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone: (33) 5 5792 1515 FAX: (33) 5 56 47 97 61

APT Website - http://www.advancedpower.com

PRELIMINARY

Symbol

Cies

Coes

Cres

Qg

Qge

Qgc

td(on)

tr

td(off)

tf

td(on)

tr

td(off)

tf

Eon

Eoff

Ets

td(on)

tr

td(off)

tf

Ets

gfe

DYNAMIC CHARACTERISTICS APT20GF120KR

UNIT

°C/W

lb•in

MIN TYP MAX

0.63

80

10

Characteristic

Junction to Case

Junction to Ambient

Mounting Torque using a 6-32 or 3mm Binding Head Machine Screw

Symbol

RΘJC

RΘJA

Torque

THERMAL CHARACTERISTICS

Characteristic

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Total Gate Charge 3

Gate-Emitter Charge

Gate-Collector ("Miller") Charge

Turn-on Delay Time

Rise Time

Turn-off Delay Time

Fall Time

Turn-on Delay Time

Rise Time

Turn-off Delay Time

Fall Time

Turn-on Switching Energy

Turn-off Switching Energy

Total Switching Losses

Turn-on Delay Time

Rise Time

Turn-off Delay Time

Fall Time

Total Switching Losses

Forward Transconductance

Test Conditions

Capacitance

VGE = 0V

VCE = 25V

f = 1 MHz

Gate Charge

VGE = 15V

VCC = 0.50VCES

IC = IC2

Resistive Switching (25°C)

VGE = 15V

VCC = 0.8VCES

IC = IC2

RG = 10Ω

Inductive Switching (150°C)

VCLAMP(Peak) = 0.66VCES

VGE = 15V

IC = IC2

RG = 10Ω

TJ = +150°C

Inductive Switching (25°C)

VCLAMP(Peak) = 0.66VCES

VGE = 15V

IC = IC2

RG = 10Ω

TJ = +25°C

VCE = 20V, IC = 15A

MIN TYP MAX

1100 1500

110 165

70 105

95 150

13 20

55 85

17

75

95

170

20 30

35 70

175 260

90 135

1.2

1.3

2.5

20

35

150

90

2.3

12

UNIT

pF

nC

ns

mJ

ns

mJ

S

1Repetitive Rating: Pulse width limited by maximum junction temperature.

2IC = 15A, VCC = 50V, RGE = 25Ω, L = 200µH, Tj = 25°C

3See MIL-STD-750 Method 3471

APT Reserves the right to change, without notice, the specifications and information contained herein.

052-6205 Rev C

EUROPE

Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone: (33) 5 57 92 15 15 FAX: (33) 5 56 47 97 61

USA

405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388-0364

APT20GF120KR

PRELIMINARY

Power dissipation

P

tot

= ƒ(

T

C

)

parameter:

T

j

≤ 150 °C

020 40 60 80 100 120 °C 160

T

C

0

20

40

60

80

100

120

140

160

180

W

220

P

tot

Collector current

I

C

= ƒ(

T

C

)

parameter:

V

GE

≥ 15 V ,

T

j

≤ 150 °C

020 40 60 80 100 120 °C 160

T

C

0

4

8

12

16

20

24

A

32

I

C

Safe operating area

I

C

= ƒ(

V

CE

)

parameter:

D

= 0

, T

C

= 25°C ,

T

j

≤ 150 °C

-1

10

0

10

1

10

2

10

A

I

C

10

0

10

1

10

2

10

3

V

CE

DC

10 ms

1 ms

100 µs

10 µs

t

p = 9.0µs

Transient thermal impedance IGBT

Z

th JC

= ƒ(

t

p

)

parameter:

D = t

p

/

T

-3

10

-2

10

-1

10

0

10

K/W

Z

thJC

10

-5

10

-4

10

-3

10

-2

10

-1

10

0

s

t

p

single pulse 0.01

0.02

0.05

0.10

0.20

D = 0.50

052-6205 Rev C

EUROPE

Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone: (33) 5 57 92 15 15 FAX: (33) 5 56 47 97 61

USA

405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388-0364

APT20GF120KR

PRELIMINARY

Typ. gate charge

V

GE

= ƒ(

Q

Gate

)

parameter:

I

C puls

= 15 A

010 20 30 40 50 60 70 80 100

Q

Gate

0

2

4

6

8

10

12

14

16

V

20

V

GE

800 V600 V

Typ. capacitances

C

=

f

(

V

CE

)

parameter:

V

GE

= 0 V, f = 1 MHz

0 5 10 15 20 25 30 V 40

V

CE

-2

10

-1

10

0

10

1

10

nF

C

Ciss

Coss

Crss

Short circuit safe operating area

I

Csc

=

f

(

V

CE

) ,

T

j

= 150°C

parameter:

V

GE

= ± 15 V,

t

sc

≤ 10 µs, L < 25 nH

0200 400 600 800 1000 1200 V 1600

V

CE

0

2

4

6

10

I

Csc

/

I

C(90°C)

Reverse biased safe operating area

I

Cpuls

=

f

(V

CE

) ,

T

j

= 150°C

parameter:

V

GE

= 15 V

0200 400 600 800 1000 1200 V 1600

V

CE

0.0

0.5

1.0

1.5

2.5

I

Cpuls

/

I

C

16A

Cies

Coes

Cres

ICpulse/IC1

ICsc /IC2

052-6205 Rev C

EUROPE

Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone: (33) 5 57 92 15 15 FAX: (33) 5 56 47 97 61

USA

405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388-0364

APT20GF120KR

PRELIMINARY

Typ. output characteristics

I

C

=

f

(

V

CE

)

parameter:

t

p

= 80 µs,

T

j

= 25 °C

0 1 2 3 V 5

V

CE

0

2

4

6

8

10

12

14

16

18

20

22

24

A

30

I

C

17V

15V

13V

11V

9V

7V

Typ. output characteristics

I

C

=

f

(

V

CE

)

parameter:

t

p

= 80 µs,

T

j

= 125 °C

0 1 2 3 V 5

V

CE

0

2

4

6

8

10

12

14

16

18

20

22

24

A

30

I

C

17V

15V

13V

11V

9V

7V

Typ. transfer characteristics

I

C

=

f

(

V

GE

)

parameter:

t

p

= 80 µs,

V

CE

= 20 V

0 2 4 6 8 10 V 14

V

GE

0

2

4

6

8

10

12

14

16

18

20

22

24

A

30

I

C