2SC3650 Ordering number : EN1780B SANYO Semiconductors DATA SHEET 2SC3650 NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier Applications Applications * LF amplifiers, various drivers, muting circuit. Features * * * * High DC current gain (hFE=800 to 3200). Low collector-to-emitter saturation voltage (VCE(sat)0.5V). Large current capacity (IC=1.2A). Ultrasmall size making it easy to provide high-density, small-sized hybrid IC's. Specifications Absolute Maximum Ratings at Ta=25C Parameter Collector-to-Base Voltage Symbol Conditions Ratings Unit VCBO VCEO 30 V 25 V 15 V Collector Current VEBO IC 1.2 A Collector Current (Pulse) ICP Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Dissipation PC Junction Temperature Tj Storage Temperature Tstg 2 500 Mounted on a ceramic board (250mm20.8mm) A mW 1.5 W 150 C --55 to +150 C Marking : CF Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. www.semiconductor-sanyo.com/network 31010LA TK IM / 61704TN (PC)/N2098HA (KT)/4227KI/3185KI, TS No.1780-1/4 2SC3650 Electrical Characteristics at Ta=25C Parameter Symbol Collector Cutoff Current ICBO Emitter Cutoff Current IEBO min typ VCE=5V, IC=500mA VCE=5V, IC=10mA hFE2 Gain-Bandwidth Product fT Output Capacitance Cob Collector-to-Emitter Saturation Voltage VCE(sat) Base-to-Emitter Saturation Voltage VBE(sat) Collector-to-Base Breakdown Voltage V(BR)CBO Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage 800 Unit max VCB=20V, IE=0A VEB=10V, IC=0A hFE1 DC Current Gain Ratings Conditions 1500 0.1 A 0.1 A 3200 600 VCE=10V, IC=50mA VCB=10V, f=1MHz 220 MHz IC=500mA, IB=10mA IC=500mA, IB=10mA 0.12 0.5 0.85 1.2 17 pF V V 30 V V(BR)CEO IC=10A, IE=0A IC=1mA, IB=0A 25 V V(BR)EBO IE=10A, IC=0A 15 V Package Dimensions unit : mm (typ) 7007B-004 IC -- VCE 0 1m A Collector Current, IC -- mA 90 A 800 400A 300A 400 200A 100A 200 IB=0A 0 0 4 8 12 Pulse 18mA 16mA 14mA 12mA 10mA 8mA 6mA A 20m A 800 A 0 0 7 600A A 500 600 IC -- VCE 2000 Collector Current, IC -- mA 1000 16 Collector-to-Emitter Voltage, VCE -- V 1600 1200 4mA 800 2mA 400 IB=0mA 0 20 ITR05748 0 0.2 0.4 0.6 0.8 1.0 Collector-to-Emitter Voltage, VCE -- V ITR05749 No.1780-2/4 2SC3650 IC -- VBE 1000 hFE -- IC 10000 VCE=5V Pulse VCE=5V Pulse 7 DC Current Gain, hFE 25C 400 --25C 600 Ta=75C Collector Current, IC -- mA 5 800 3 Ta=75C 25C --25C 2 1000 7 5 3 200 2 100 0 0 0.2 0.4 0.6 0.8 Base-to-Emitter Voltage, VBE -- V 3 7 5 7 100 2 3 5 7 1000 2 3 ITR05751 Cob -- VCB 100 VCE=10V Pulse f=1MHz 7 Output Capacitance, Cob -- pF 5 3 2 100 7 5 3 2 5 3 2 10 7 2 10 3 5 7 100 2 3 5 7 1000 Collector Current, IC -- mA 2 5 1.0 3 2 5 7 2 10 3 IC / IB=50 Pulse Base-to-Emitter Saturation Voltage, VBE(sat) -- V 7 5 3 2 0.1 7 5 3 2 0.01 5 ITR05753 VBE(sat) -- IC 1.0 IC / IB=50 Pulse 7 3 Collector-to-Base Voltage, VCB -- V ITR05752 VCE(sat) -- IC 1.0 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 2 Collector Current, IC -- mA 10 5 3 2 0.1 7 5 3 2 0.01 3 5 2 10 3 5 2 100 3 5 2 3 1000 ITR05754 Collector Current, IC -- mA 3 3 2 3 1000 ITR05755 PC -- Ta eat s ink ) m 8m 0. Collector Dissipation, PC -- W No h 0.4 2 Collector-to-Emitter Voltage, VCE -- V 0.6 m m 50 2 (2 10 d 7 ar bo 5 ic am 3 0.8 0.2 Single pulse Mounted on a ceramic board (250mm20.8mm) 2 1.0 er ac 3 1.2 on 10 7 5 1.0 5 d n 2 7 3 e nt tio 5 2 100 ou ms 10 s op era 3 3 5 M s 1m DC 0m 10 100 7 5 1.0 3 1.4 IC=120mA 2 2 10 1.6 ICP=200mA 2 5 Collector Current, IC -- mA ASO 5 Collector Current, IC -- mA 5 7 10 ITR05750 f T -- IC 1000 Gain-Brandwidth Product, f T -- MHz 3 1.0 0 3 5 ITR05757 0 20 40 60 80 100 120 Ambient Temperature, Ta -- C 140 160 ITR05756 No.1780-3/4 2SC3650 SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of March, 2010. Specifications and information herein are subject to change without notice. PS No.1780-4/4