2SC3650
No.1780-1/4
Applications
•LF amplifiers, various drivers, muting circuit.
Features
•High DC current gain (hFE=800 to 3200).
•Low collector-to-emitter saturation voltage (VCE(sat)≤0.5V).
•Large current capacity (IC=1.2A).
•Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage VCBO 30 V
Collector-to-Emitter Voltage VCEO 25 V
Emitter-to-Base Voltage VEBO 15 V
Collector Current IC1.2 A
Collector Current (Pulse) ICP 2A
Collector Dissipation PC500 mW
Mounted on a ceramic board (250mm
2
✕0.8mm)
1.5 W
Junction Temperature Tj 150 °C
Storage Temperature Tstg --55 to +150 °C
Marking : CF
Ordering number : EN1780B
31010LA TK IM / 61704TN (PC)/N2098HA (KT)/4227KI/3185KI, TS
SANYO Semiconductors
DATA SHEET
2SC3650 NPN Epitaxial Planar Silicon Transistor
High hFE, Low-Frequency
General-Purpose Amplifier Applications
www.semiconductor-sanyo.com/network
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer
'
s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer
'
s products or
equipment.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
2SC3650
No.1780-2/4
Electrical Characteristics at Ta=25°C
Ratings
Parameter Symbol Conditions min typ max Unit
Collector Cutoff Current ICBO VCB=20V, IE=0A 0.1 μA
Emitter Cutoff Current IEBO VEB=10V, IC=0A 0.1 μA
DC Current Gain hFE1V
CE=5V, IC=500mA 800 1500 3200
hFE2V
CE=5V, IC=10mA 600
Gain-Bandwidth Product fTVCE=10V, IC=50mA 220 MHz
Output Capacitance Cob VCB=10V, f=1MHz 17 pF
Collector-to-Emitter Saturation Voltage VCE(sat) IC=500mA, IB=10mA 0.12 0.5 V
Base-to-Emitter Saturation Voltage VBE(sat) IC=500mA, IB=10mA 0.85 1.2 V
Collector-to-Base Breakdown Voltage V(BR)CBO IC=10μA, IE=0A 30 V
Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=1mA, IB=0A 25 V
Emitter-to-Base Breakdown Voltage V(BR)EBO IE=10μA, IC=0A 15 V
Package Dimensions
unit : mm (typ)
7007B-004
IC -- VCE
Collector Current, IC -- mA
Collector-to-Emitter Voltage, VCE -- V
IC -- VCE
Collector Current, IC -- mA
Collector-to-Emitter Voltage, VCE -- V
ITR05749
600
800
1000
400
200
0048 162012
ITR05748
IB=0μA
1200
800
2000
1600
400
00 0.40.2 0.6 0.8 1.0
100μA
200μA
300
μ
A
400
μ
A
900μA
1mA
500
μ
A
700
μ
A
800
μ
A
600μA
Pulse
6mA
8mA
10mA
12mA
14mA
20mA
16mA
18mA
2mA
4mA
IB=0mA
2SC3650
No.1780-3/4
VBE(sat) -- IC
Collector Current, IC -- mA
PC -- Ta
A S O
Collector-to-Emitter Voltage, VCE -- V
Collector Current, IC -- mA
Ambient Temperature, Ta -- °C
Collector Dissipation, PC -- W Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
VCE(sat) -- IC
Collector Current, IC -- mA
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
IC -- VBE
Base-to-Emitter Voltage, VBE -- V
Collector Current, IC -- mA
hFE -- IC
Collector Current, IC -- mA
DC Current Gain, hFE
fT -- IC
Collector Current, IC -- mA
Gain-Brandwidth Product, fT -- MHz
Cob -- VCB
Collector-to-Base Voltage, VCB -- V
Output Capacitance, Cob -- pF
ITR05755
ITR05754
7
0.1
5
3
2
7
1.0
5
3
2
0.01 23 1000 32523 100
53 10
5
IC / IB=50
Pulse
IC / IB=50
Pulse
ITR05757
357 3
1.0 10
253
257
1.2
1.4
1.6
0.8
1.0
0.6
0.4
0.2
00 20 40 80 100
60 140 160
120 ITR05756
5
3
2
3
2
5
7
3
2
5
7
100
10
1.0
Single pulse
Mounted on a ceramic board (250mm2✕0.8mm)
DC operation
100ms
1ms
10ms
Mounted on a ceramic board (250mm2✕0.8mm)
No heat sink
7
0.1
5
3
2
7
1.0
5
3
2
0.01 23 1000 32523 100
53 10
5
ITR05751ITR05750
1000
0
800
600
200
400
7
10000
5
3
1000
2
7
5
3
100
2
VCE=5V
Pulse
Ta=75°C
25°C
--25°C
Ta=75
°
C
--25
°
C
25°C
VCE=5V
Pulse
ITR05753
1000
7
5
3
2
100
7
5
3
2
1010 3257
100 323257
1000 ITR05752
5
3
100
7
5
2
10
7
1.0 23 5 23 5710
VCE=10V
Pulse f=1MHz
0.20 0.60.4 0.8 1.0 735 10 3275100 323275 1000
ICP=200mA
IC=120mA
2SC3650
No.1780-4/4
PS
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This catalog provides information as of March, 2010. Specifications and information herein are subject
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