Power Management & Multimarket
SiC
Silicon Carbide Diode
Final Datasheet
Rev. 2.2, 2013-01-15
5th Generation thinQ!TM
650V SiC Schottky Diode
IDW12G65C5
1) J-STD20 and JESD22
2) All devices tested under avalanche conditions for a time periode of 10ms
Final Data Sheet 2 Rev. 2.2, 2013-01-15
1 Description
Features
Revolutionary semiconductor material - Silicon Carbide
Benchmark switching behavior
No reverse recovery/ No forward recovery
Temperature independent switching behavior
High surge current capability
Pb-free lead plating; RoHS compliant
Qualified according to JEDEC1) for target applications
Breakdown voltage tested at 27 mA2)
Optimized for high temperature operation
Benefits
System efficiency improvement over Si diodes
System cost / size savings due to reduced cooling requirements
Enabling higher frequency / increased power density solutions
Higher system reliability due to lower operating temperatures
Reduced EMI
Applications
Switch mode power supply
Power factor correction
Solar inverter
Uninterruptible power supply
Table 1 Key Performance Parameters
Parameter Value Unit
VDC 650 V
QC; VR=400V 18 nC
EC; VR=400V 4.1 µJ
IF @ TC < 125°C 12 A
Table 2 Pin Definition
Pin 1 Pin 2 Pin 3
n.c. C A
Type / ordering Code Package Marking Related links
IDW12G65C5 PG-TO247-3 D1265C5 www.infineon.com/sic
IDW12G65C55th Generation thinQ!™ SiC Schottk
y
Diode
ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC
Schottky Barrier diodes. Thanks to the more compact design and thin-wafer
technology, the new family of products shows improved efficiency over all load
conditions, resulting from both the improved thermal characteristics and a lower
figure of merit (Qc x Vf).
The new thinQ!™ Generation 5 has been designed to complement our 650V
CoolMOS™ families: this ensures meeting the most stringent application
requirements in this voltage range. 1 2 3
1
2
3
CASE
5
th Generation thinQ!TM SiC Schottky Diode
IDW12G65C5
Table of contents
Final Data Sheet 3 Rev. 2.2, 2013-01-15
Table of Contents
1Description .......................................................................................................................................... 2
2Maximum ratings ................................................................................................................................ 4
3Thermal characteristics ..................................................................................................................... 4
4Electrical characteristics ................................................................................................................... 5
5Electrical characteristics diagrams .................................................................................................. 6
6Simplified Forward Characteristics Model ...................................................................................... 8
7Package outlines ................................................................................................................................ 9
8Revision History ............................................................................................................................... 10
5
th Generation thinQ!TM SiC Schottky Diode
IDW12G65C5
Maximum ratings
Final Data Sheet 4 Rev. 2.2, 2013-01-15
2 Maximum ratings
Table 3 Maximum ratings
Parameter Symbol Values Unit Note/Test Condition
Min. Typ. Max.
Continuous forward current IF – –
12
A
TC < 125°C, D=1
Surge non-repetitive forward current,
sine halfwave
IF,SM – –
71 TC = 25°C, tp=10 ms
– –
56 TC = 150°C, tp=10 ms
Non-repetitive peak forward current IF,max – –
505 TC = 25°C, tp=10 µs
i²t value ∫ i²dt – –
25.4 A²s TC = 25°C, tp=10 ms
– –
15.7 TC = 150°C, tp=10 ms
Repetitive peak reverse voltage VRRM – –
650 V
Diode dv/dt ruggedness dv/dt – –
100 V/ns VR=0..480 V
Power dissipation Ptot – –
76 W TC = 25°C
Operating and storage temperature Tj;Tstg -55 – 175 °C
Mounting torque – 50
70 Ncm M3 and M4 screws
3 Thermal characteristics
Table 4 Thermal characteristics TO-247-3
Parameter Symbol Values Unit Note/Test Condition
Min. Typ. Max.
Thermal resistance, junction-case RthJC – 1.5 2.0
K/W
Thermal resistance, junction-
ambient
RthJA – –
62 leaded
Soldering temperature,
wavesoldering only allowed at leads
Tsold – –
260 °C 1.6mm (0.063 in.) from
case for 10 s
5
th Generation thinQ!TM SiC Schottky Diode
IDW12G65C5
Electrical characteristics
Final Data Sheet 5 Rev. 2.2, 2013-01-15
4 Electrical characteristics
Table 5 Static characteristics
Parameter Symbol Values Unit Note/Test Condition
Min. Typ. Max.
DC blocking voltage VDC 650 – –
V
IR= 0.19 mA, Tj = 25°C
Diode forward voltage VF – 1.5 1.7 IF= 12 A, Tj=25°C
– 1.8 2.1 IF= 12 A, Tj=150°C
Reverse current IR – 0.6 190
µA
VR=650 V, Tj=25°C
– 0.2 68 VR=600 V, Tj=25°C
– 2.4 1350 VR=650 V, Tj=150°C
Table 6 AC characteristics
Parameter Symbol Values Unit Note/Test Condition
Min. Typ. Max.
Total capacitive charge Qc – 18
nC VR=400 V, di/dt=200A/µs,
IF≤IF,MAX, Tj=150°C.
Total Capacitance C – 360 –
pF
VR=1 V, f=1 MHz
– 47 – VR=300 V, f=1 MHz
– 46 – VR=600 V, f=1 MHz
5
th Generation thinQ!TM SiC Schottky Diode
IDW12G65C5
Electrical characteristics diagrams
Final Data Sheet 6 Rev. 2.2, 2013-01-15
5 Electrical characteristics diagrams
Table 7
Power dissipation Diode forward current
0
10
20
30
40
50
60
70
80
25 50 75 100 125 150 175
Ptot[W]
TC[°C]
0
10
20
30
40
50
60
70
80
90
100
25 50 75 100 125 150 175
I
F
[A]
T
C
[°C]
0.1
0.3
0.5
0.7
1
Ptot=f(TC); RthJC,max IF=f(TC); Tj≤175°C; RthJC,max; parameter D=duty cycle
Table 8
Typical for ward characteristics Typical for ward characteristics in sur ge current
0
5
10
15
20
25
0123
I
F
[A]
V
F
[V]
0
20
40
60
80
100
120
0123456
I
F
[A]
V
F
[V]
IF=f(VF); tp=200 µs; parameter: Tj IF=f(VF); tp=200 µs; parameter: Tj
-55°C
175°C
150°C
25°C
100°C
-55°C
25°C
100°C
150°C
175°C
5
th Generation thinQ!TM SiC Schottky Diode
IDW12G65C5
Electrical characteristics diagrams
Final Data Sheet 7 Rev. 2.2, 2013-01-15
Table 9
Typ. capacitance charge vs. current slope1) Typ. reverse current vs. reverse voltage
0
2
4
6
8
10
12
14
16
18
20
100 300 500 700 900
Q
C
[nC]
dI
F
/dt [A/µs]
1.E-9
1.E-8
1.E-7
1.E-6
1.E-5
100 200 300 400 500 600
I
R
[A]
V
R
[V]
QC=f(diF/dt); Tj=150°C; VR=400 V; IF≤IF,max IR=f(VR); parameter: Tj
1) Only capacitive charge, guaranteed by design.
Table 10
Max. transient thermal impedance Typ. capacitance vs. reverse voltage
0.01
0.1
1
1.E-06 1.E-03 1.E+00
Z
th,jc
[K/W]
t
p
[s]
0.5
0.2
0.1
0.05
0.02
0.01
single pulse
0
50
100
150
200
250
300
350
400
450
500
0 1 10 100 1000
C[pF]
V
R
[V]
Zth,jc=f(tP); parameter: D=tP/T C=f(VR); Tj=25°C; f=1 MHz
-55°C
175°C
150°C
25°C
100°C
5
th Generation thinQ!TM SiC Schottky Diode
IDW12G65C5
Electrical characteristics diagrams
Final Data Sheet 8 Rev. 2.2, 2013-01-15
Table 11
Typ. capacitance stored energy
0
2
4
6
8
10
12
0 200 400 600
E
C
[µJ]
V
R
[V]
EC=f(VR)
6 Simplified Forward Characteristics Model
Table 12
Equivalent forward current curve Mathematical Equation
I
F
[A]
V
F
[V]
VF=f(IF) Tj in °C; -55°C < Tj < 175°C; IF < 24 A
1/Rdiff
Vth
FDIFFTHF IRVV
0.03910.07110.071
V 04.1001.0
4-
2
6- jjjDIFF
jjTH
TTTR
TTV
5
th Generation thinQ!TM SiC Schottky Diode
IDW12G65C5
Package outlines
Final Data Sheet 9 Rev. 2.2, 2013-01-15
7 Package outlines
Figure 1 Outlines TO-247, dimensions in mm/inches
5
th Generation thinQ!TM SiC Schottky Diode
IDW12G65C5
Revision History
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Edition 2013-01-15
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2013 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all
warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual
property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
The Infineon Technologies component described in this Data Sheet may be used in life-support devices or
systems and/or automotive, aviation and aerospace applications or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the
failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or
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human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to
assume that the health of the user or other persons may be endangered.
Final Data Sheet 10 Rev. 2.2, 2013-01-15
8 Revision History
5
th
Generation thinQ!
TM
SiC Schottky Diode
Revision History : 2013-0 1-15, Rev. 2.2
Previous Revision:
Revision Subjects (major changes since last version)
2.0 Release of the final datasheet.
2.1 Reverse current values, maximum diode forward voltage.
2.2 Reverse current values, tested avalanche current, simplified calculation model
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