OptoHiTE Series, High-Temperature Phototransistor Optocoupler in Half-Pitch Mini-Flat 4-Pin Package FODM8801A, FODM8801B, FODM8801C www.onsemi.com HALF-PITCH MINI-FLAT Description In the OptoHiT series, the FODM8801 is a first-of-kind phototransistor, utilizing ON Semiconductor's leading-edge proprietary process technology to achieve high operating temperature characteristics, up to 125C. The opto-coupler consists of an aluminum gallium arsenide (AlGaAs) infrared light-emitting diode (LED) optically coupled to a phototransistor, available in a compact half-pitch, mini- flat, 4-pin package. It delivers high current transfer ratio at very low input current. The input-output isolation voltage, VISO, is rated at 3750 VACRMS. MFP4 2.5 x 4.4, 1.27P CASE 100AL MARKING DIAGRAM ON 8801x VXYYM Features * Utilizing Proprietary Process Technology to Achieve High Operating * * * * * * Temperature: Up to 125C Guaranteed Current Transfer Ratio (CTR) Specifications Across Full Temperature Range Excellent CTR Linearity at High-Temperature CTR at Very Low Input Current, IF High Isolation Voltage Regulated by Safety Agency: C-UL / UL1577, 3750 VACRMS for 1 Minute and DIN EN/IEC60747-5-5 Compact Half-Pitch, Mini-Flat, 4-Pin Package (1.27 mm Lead Pitch, 2.4 mm Maximum Standoff Height) >5 mm Creepage and Clearance Distance Applicable to Infrared Ray Reflow, 245C These are Pb-Free Devices 8801x = Specific Device Code (x = A, B, C) V = DIN EN/IEC60747-5-5 Option (only appears on component ordered with this option) X = One-Digit Year Code YY = Digit Work Week M = Assembly Package Code PIN CONNECTIONS ANODE 1 CATHODE 2 4 COLLECTOR 3 EMITTER Applications * * * * * Primarily Suited for DC-DC Converters Ground-Loop Isolation, Signal-Noise Isolation Communications - Adapters, Chargers Consumer - Appliances, Set-Top Boxes Industrial - Power Supplies, Motor Control, Programmable Logic Control (c) Semiconductor Components Industries, LLC, 2010 June, 2020 - Rev. 4 1 ORDERING INFORMATION See detailed ordering and shipping information on page 9 of this data sheet. Publication Order Number: FODM8801A/D FODM8801A, FODM8801B, FODM8801C SAFETY AND INSULATION RATINGS (As per DIN EN/IEC 60747-5-5, this optocoupler is suitable for "safe electrical insulation" only within the safety limit data. Compliance with the safety ratings shall be ensured by means of protective circuits.) Parameter Characteristics Installation Classifications per DIN VDE 0110/1.89 Table 1, For Rated Mains Voltage <150 VRMS I-IV <300 VRMS I-III Climatic Classification 40/125/21 Pollution Degree (DIN VDE 0110/1.89) 2 Comparative Tracking Index Symbol 175 Value Unit Input-to-Output Test Voltage, Method A, VIORM x 1.6 = VPR, Type and Sample Test with tm = 10 s, Partial Discharge < 5 pC 848 Vpeak Input-to-Output Test Voltage, Method B, VIORM x 1.875 = VPR, 100% Production Test with tm = 1 s, Partial Discharge <5 pC 1060 Vpeak VIORM Maximum Working Insulation Voltage 565 Vpeak VIOTM Highest Allowable Over-Voltage 6000 Vpeak External Creepage 5 mm External Clearance 5 mm VPR Parameter DTI Distance Through Insulation (Insulation Thickness) 0.5 mm TS Case Temperature (Note 1) 150 C IS,INPUT Input Current (Note 1) 200 mA PS,OUTPUT Output Power (Note 1) 300 mW Insulation Resistance at TS, VIO = 500 V (Note 1) >109 W Value Unit RIO 1. Safety limit values - maximum values allowed in the event of a failure. ABSOLUTE MAXIMUM RATINGS (TA = 25C, unless otherwise noted) Symbol Parameter TOTAL PACKAGE TSTG Storage Temperature -40 to +150 C TOPR Operating Temperature -40 to +125 C Junction Temperature -40 to +140 C Lead Solder Temperature 245 for 10 s C Continuous Forward Current 20 mA Reverse Input Voltage 6 V Power Dissipation (Note 2, 4) 40 mW Continuous Collector Current 30 mA VCEO Collector-Emitter Voltage 75 V VECO Emitter-Collector Voltage 7 V PDC Collector Power Dissipation (Note 3, 4) 150 mW TJ TSOL EMITTER IF(average) VR PDLED DETECTOR IC(average) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 2. Derate linearly from 73C at a rate of 0.24 mW/C. 3. Derate linearly from 73C at a rate of 2.23 mW/C. 4. Functional operation under these conditions is not implied. Permanent damage may occur if the device is subjected to conditions outside these ratings. www.onsemi.com 2 FODM8801A, FODM8801B, FODM8801C RECOMMENDED OPERATING CONDITIONS Symbol TA VFL(OFF) IFH Value Unit Operating Temperature Parameter -40 to +125 C Input Low Voltage -5.0 to +0.8 V 1 to 10 mA Input High Forward Current Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability. ISOLATION CHARACTERISTICS Symbol Parameter VISO Input-Output Isolation Voltage RISO CISO Conditions Min Typ Max Unit f = 60 Hz, t = 1 min., II-O 10 mA (Note 5, 6) 3.750 - - VACRMS Isolation Resistance VI-O = 500 V (Note 5) 1012 - - W Isolation Capacitance f = 1 MHz - 0.3 0.5 pF 5. Device is considered a two-terminal device: pins 1 and 2 are shorted together and pins 3 and 4 are shorted together. 6. 3,750 VACRMS for 1 minute is equivalent to 4,500 VACRMS for 1 second. ELECTRICAL CHARACTERISTICS Apply over all recommended conditions (TA = -40C to +125C unless otherwise specified.) All typical values are measured at TA = 25C Parameter Symbol Conditions Min Typ Max Unit 1.80 V EMMITER VF Forward Voltage IF = 1 mA 1.00 1.35 Forward-Voltage Coefficient IF = 1 mA - -1.6 - mV/C IR Reverse Current VR = 6 V - - 10 mA CT Terminal Capacitance V = 0 V, f = 1 MHz - 30 - pF BVCEO Collector-Emitter Breakdown Voltage IC = 0.5 mA, IF = 0 mA 75 130 - V BVECO Emitter-Collector Breakdown Voltage IE = 100 mA, IF = 0 mA 7 12 - V Collector Dark Current VCE = 75 V, IF = 0 mA, TA = 25C - - 100 nA VCE = 50 V, IF = 0 mA - - 50 mA VCE = 5 V, IF = 0 mA - - 30 mA VCE = 0 V, f = 1 MHz - 8 - pF DVF / DTA DETECTOR ICEO CCE Capacitance Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 3 FODM8801A, FODM8801B, FODM8801C TRANSFER CHARACTERISTICS Apply over all recommended conditions (TA = -40C to +125C unless otherwise specified.) All typical values are measured at TA = 25C Symbol CTRCE Parameter Current Transfer Ratio (Collector-Emitter) Device FODM8801A FODM8801B FODM8801C CTRCE(SAT) Saturated Current Transfer Ratio (Collector-Emitter) FODM8801A FODM8801B FODM8801C VCE(SAT) Saturation Voltage FODM8801A FODM8801B FODM8801C Conditions Min Typ Max Unit IF = 1.0 mA, VCE = 5 V @ TA = 25C 80 120 160 % IF = 1.0 mA, VCE = 5 V 35 120 230 IF = 1.6 mA, VCE = 5 V 40 125 - IF = 3.0 mA, VCE = 5 V 45 138 - IF = 1.0 mA, VCE = 5 V @ TA = 25C 130 195 260 IF = 1.0 mA, VCE = 5 V 65 195 360 IF = 1.6 mA, VCE = 5 V 70 202 - IF = 3.0 mA, VCE = 5 V 75 215 - IF = 1.0 mA, VCE = 5 V @ TA = 25C 200 300 400 IF = 1.0 mA, VCE = 5 V 100 300 560 IF = 1.6 mA, VCE = 5 V 110 312 - IF = 3.0 mA, VCE = 5 V 115 330 - IF = 1.0 mA, VCE = 0.4 V @ TA = 25C 65 108 150 IF = 1.0 mA, VCE = 0.4 V 30 108 - IF = 1.6 mA, VCE = 0.4 V 25 104 - IF = 3.0 mA, VCE = 0.4 V 20 92 - IF = 1.0 mA, VCE = 0.4 V @ TA = 25C 90 168 245 IF = 1.0 mA, VCE = 0.4 V 45 168 - IF = 1.6 mA, VCE = 0.4 V 40 155 - IF = 3.0 mA, VCE = 0.4 V 35 132 - IF = 1.0 mA, VCE = 0.4 V @ TA = 25C 140 238 380 IF = 1.0 mA, VCE = 0.4 V 75 238 - IF = 1.6 mA, VCE = 0.4 V 65 215 - IF = 3.0 mA, VCE = 0.4 V 55 177 - IF = 1.0 mA, IC = 0.3 mA - 0.17 0.40 IF = 1.6 mA, IC = 0.4 mA - 0.16 0.40 IF = 3.0 mA, IC = 0.6 mA - 0.15 0.40 IF = 1.0 mA, IC = 0.45 mA - 0.17 0.40 IF = 1.6 mA, IC = 0.6 mA - 0.16 0.40 IF = 3.0 mA, IC = 1.0 mA - 0.16 0.40 IF = 1.0 mA, IC = 0.75 mA - 0.18 0.40 IF = 1.6 mA, IC = 1.0 mA - 0.17 0.40 IF = 3.0 mA, IC = 1.6 mA - 0.17 0.40 www.onsemi.com 4 % V FODM8801A, FODM8801B, FODM8801C SWITCHING CHARACTERISTICS Apply over all recommended conditions (TA = -40C to +125C unless otherwise specified). All typical values are measured at TA = 25C Symbol tON tOFF Parameter Turn-On Time Device Conditions Min Typ Max Unit All Devices IF = 1.6 mA, VCC = 5 V, RL = 0.75 kW 1 6 20 ms IF = 1.6 mA, VCC = 5 V, RL = 4.7 kW - 6 - IF = 1.6 mA, VCC = 5 V, RL = 0.75 kW 1 6 20 Turn-Off Time All Devices IF = 1.6 mA, VCC = 5 V, RL = 4.7 kW - 40 - tR Output Rise Time (10% to 90%) All Devices IF = 1.6 mA, VCC = 5 V, RL = 0.75 kW - 5 - ms tF Output Fall Time (90% to 10%) All Devices IF = 1.6 mA, VCC = 5 V, RL = 0.75 kW - 5.5 - ms CMH Common-Mode Rejection Voltage (Transient Immunity) - Output High All Devices TA = 25C, IF = 0 mA, VO > 2.0 V, RL = 4.7 kW, VCM = 1000 V (Note 7), Figure 14 - 20 - kV/ms CML Common-Mode Rejection Voltage (Transient Immunity) - Output Low All Devices TA = 25C, IF = 1.6 mA, VO < 0.8 V, RL = 4.7 kW, VCM = 1000 V (Note 7), Figure 14 - 20 - kV/ms ms 7. Common-mode transient immunity at output high is the maximum tolerable positive dVcm/dt on the leading edge of the common-mode impulse signal, VCM, to assure that the output remains high. www.onsemi.com 5 FODM8801A, FODM8801B, FODM8801C TYPICAL PERFORMANCE CURVES 100 IC - COLLECTOR CURRENT (mA) IF - FORWARD CURRENT (mA) 100 10 TA = 125C 1.0 0.1 1.0 1.1 1.2 = 125C 1.3 TA = -40C 1.4 1.5 1.6 1.7 TA = 125C VCE = 5.0 V 10 VCE = 0.4 V 1.0 0.1 0.1 1.8 1 VF - FORWARD VOLTAGE (V) CTR - CURRENT TRANSFER RATIO (%) VCE = 5 V TA = 125C 100 10 0.1 1 10 100 10 VCE = 5 V TA = 25C NORMALIZED TO IF = 1 mA 1.0 0.1 0.1 1 IF - FORWARD CURRENT (mA) 1.2 NORMALIZED CTR @ 25C NORMALIZED CTR @ 25C IF = 0.5 mA IF = 1 mA 0.6 0.4 0.2 0 -40 -20 0 20 40 60 80 100 VCE = 5 V 1.0 IF = 2 mA 0.8 100 Figure 4. Normalized CTR vs. Forward Current VCE = 2 V 1.0 10 IF - FORWARD CURRENT (mA) Figure 3. Current Transfer Ratio vs. Forward Current 1.2 100 Figure 2. Collector Current vs. Forward Current CTR (NORMALIZED) = CTR(IF) / CTR (IF = 1 mA) Figure 1. Forward Current vs. Forward Voltage 1000 10 IF - FORWARD CURRENT (mA) IF = 2 mA 0.8 IF = 0.5 mA IF = 1 mA 0.6 0.4 0.2 0 -40 -20 120 140 TA - AMBIENT TEMPERATURE (C) 0 20 40 60 80 100 120 140 TA - AMBIENT TEMPERATURE (C) Figure 5. Normalized CTR vs. Ambient Temperature Figure 6. Normalized CTR vs. Ambient Temperature www.onsemi.com 6 FODM8801A, FODM8801B, FODM8801C TYPICAL PERFORMANCE CURVES (continued) 100 40 IC - COLLECTOR CURRENT (mA) IC - COLLECTOR CURRENT (mA) VCE = 5 V IF = 20 mA IF = 10 mA 10 IF = 5.0 mA IF = 3.0 mA IF = 1.6 mA IF = 1.0 mA 1.0 IF = 0.5 mA 0.1 -40 -20 0 20 40 60 80 100 120 IF = 15 mA 25 IF = 20 mA 20 IF = 10 mA 15 IF = 5 mA 10 5 IF = 1 mA 0 1 4 5 1000 VCE = 5 V TA = 25C IF = 1.6 mA 10000 SWITCHING TIME (ms) VCE = 75 V 1000 VCE = 48 V 100 VCE = 24 V VCE = 10 V 10 1 100 tOFF tF 10 tON tR 1 VCE = 5 V 0.1 0.01 -40 -20 0 20 40 60 80 100 0.1 100 120 10 TA - AMBIENT TEMPERATURE (C) Figure 10. Switching Time vs. Load Resistance 300 CTR - CURRENT TRANSFER RATIO (%) 0.35 0.30 IF = 1.6 mA, IC = 1.6 mA 0.20 IF = 3.0 mA, IC = 1.8 mA 0.15 0.10 0.05 0.00 -40 -20 0 20 40 60 80 100 100 RL - LOAD RESISTANCE (kW) Figure 9. Collector Dark Current vs. Ambient Temperature VCE(SAT) - COLLECTOR-EMITTER SATURATION VOLTAGE (V) 3 Figure 8. Collector Current vs. Collector-Emitter Voltage 100000 0.25 2 VCE - COLLECTOR-EMITTER VOLTAGE (V) Figure 7. Collector Current vs. Ambient Temperature ICEO - COLLECTOR DARK CURRENT (nA) 30 0 TA - AMBIENT TEMPERATURE (C) TA = 25C 35 120 TA - AMBIENT TEMPERATURE (C) VCE = 5 V, IF = 3 mA 250 VCE = 5 V, IF = 1 mA VCE = 5 V, IF = 1.6 mA VCE = 0.4 V, IF = 1 mA 200 VCE = 0.4 V, IF = 1.6 mA 150 VCE = 0.4 V, IF = 3 mA 100 50 -40 -20 0 20 40 60 80 100 120 TA - AMBIENT TEMPERATURE (C) Figure 11. Collector-Emitter Saturation Voltage vs. Ambient Temperature Figure 12. Current Transfer Ration vs. Ambient Temperature www.onsemi.com 7 FODM8801A, FODM8801B, FODM8801C TEST CIRCUITS +5 V Pulse Generator: tr = 5 ns ZO = 50 W PW =50 ms DC = 1% IF IF Monitor + 1 4 2 3 RL = 4.7 kW VO VO Monitoring Node GND RM (IF = 1.6 mA) Input Pulse tR tF 90% Output Pulse 5V 10% VOL tON tOFF Figure 13. Test Circuit for Propagation Delay, Rise Time, and Fall Time +5 V IF + RL = 4.7 kW 1 4 2 3 SW VO Monitoring Node GND RM VCM Pulse Gen 1 kV VCM 90% 10% 0V VOH VO (IF = 0 mA) 2V 0.8 V VO (IF = 1.6 mA) VOL Figure 14. Test Circuit for Instantaneous Common-Mode Rejection Voltage www.onsemi.com 8 FODM8801A, FODM8801B, FODM8801C REFLOW PROFILE 260 245 240 220 TP Max. Ramp-up Rate = 3C/s Max. Ramp-down Rate = 6C/s tP TL 200 Tsmax tL Temperature (C) 180 160 140 Tsmin tS 120 100 80 60 40 20 0 120 240 360 Time 25C to Peak Figure 15. Reflow Profile Table 1. REFLOW PROFILE Profile Freature Pb-Free Assembly Profile Temperature Minimum (Tsmin) 150C Temperature Maximum (Tsmax) 200C Time (tS) from (Tsmin to Tsmax) 60 - 120 seconds Ramp-up Rate (tL to tP) 3C/second maximum Liquidous Temperature (TL) 217C Time (tL) Maintained Above (TL) 60 - 150 seconds Peak Body Package Temperature 245C +0C / -5C Time (tP) within 5C of 245C 30 seconds Ramp-down Rate (TP to TL) 6C/second maximum Time 25C to Peak Temperature 8 minutes maximum ORDERING INFORMATION Part Number Package Shipping FODM8801A Half Pitch Mini-Flat 4-Pin 100 Units / Tube FODM8801AR2 Half Pitch Mini-Flat 4-Pin 2500 / Tape & Reel FODM8801AV Half Pitch Mini-Flat 4-Pin, DIN EN/IEC60747-5-5 Option 100 Units / Tube FODM8801AR2V Half Pitch Mini-Flat 4-Pin, DIN EN/IEC60747-5-5 Option 2500 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 8. The product orderable part number system listed in this table also applies to the FODM8801B, FODM8801C products. OptoHIT is trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. www.onsemi.com 9 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS MFP4 2.5X4.4, 1.27P CASE 100AL ISSUE O DATE 31 AUG 2016 0.3-0.51 PIN ONE 0.61 1.52 1 3 0.55-0.75 4.83 7.87 4.40 (Typ) 6.30-7.29 2 4 2.31-2.69 1.27 2.39 (Max) LAND PATTERN RECOMMENDATION 1.95-2.11 0-0.20 R0.15 (Typ) 2\: R0.15 (Typ) 1.27+/- .127 0.30-0.89 0.18-0.25 1.19 (Typ) NOTES: A) NO STANDARD APPLIES TO THIS PACKAGE B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH, AND TIE BAR EXTRUSION DOCUMENT NUMBER: DESCRIPTION: 98AON13485G MFP4 2.5X4.4, 1.27P Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped "CONTROLLED COPY" in red. 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