2SD1609, 2SD1610 Silicon NPN Epitaxial Application Low frequency high voltage amplifier complementary pair with 2SB1109 and 2SB1110 Outline TO-126 MOD 2 3 1 ID 1. Emitter 2. Collector 3. Base 2 32 k (Typ) 3 0.4 k (Typ) 1 Absolute Maximum Ratings (Ta = 25C) Ratings Item Symbol 2SD1609 2SD1610 Unit Collector to base voltage VCBO 160 200 V Collector to emitter voltage VCEO 160 200 V Emitter to base voltage VEBO 5 5 V Collector current IC 100 100 mA Collector power dissipation PC 1.25 1.25 W Junction temperature Tj 150 150 C Storage temperature Tstg -45 to +150 -45 to +150 C 2SD1609, 2SD1610 Electrical Characteristics (Ta = 25C) 2SD1609 2SD1610 Item Symbol Min Typ Max Min Typ Max Unit Test conditions Collector to base breakdown voltage V(BR)CBO 160 -- -- 200 -- -- V IC = 10 A, IE = 0 Collector to emitter breakdown voltage V(BR)CEO 160 -- -- 200 -- -- V IC = 1 mA, RBE = Emitter to base breakdown voltage V(BR)EBO 5 -- -- 5 -- -- V IE = 10 A, IC = 0 -- -- 10 -- -- -- A VCB = 140 V, IE = 0 -- -- -- -- -- 10 VCE = 160 V, IE = 0 60 -- 320 60 -- 320 VCE = 5 V, IC = 10 mA hFE2 30 -- -- 30 -- -- VCE = 5 V, IC = 1 mA Base to emitter voltage VBE -- -- 1.5 -- -- 1.5 V VCE = 5 V, IC = 10 mA Collector to emitter saturation voltage -- -- 2 -- -- 2 V IC = 30 mA, IB = 3 mA Gain bandwidth product fT -- 140 -- -- 140 -- MHz VCE = 5 V, IC = 10 mA Collector output capacitance -- 3.8 -- -- 3.8 -- pF VCB = 10 V, IE = 0, f = 1 MHz Collector cutoff current ICBO DC current tarnsfer ratio Note: hFE1* 1 VCE(sat) Cob 1. The 2SD1609 and 2SD1610 are grouped by hFE1 as follows. B C D 60 to 120 100 to 200 160 to 320 2 2SD1609, 2SD1610 Maximum Collector Dissipation Curve Collector power dissipation PC (W) 1.5 1.0 0.5 0 50 100 Ambient temperature Ta (C) 150 Typical Output Characteristics Collector current IC (mA) 20 16 120 110 100 90 80 70 60 50 40 30 20 10 A IB = 0 12 8 4 0 2 4 6 8 10 Collector to emitter voltage VCE (V) Typical Transfer Characteristics 100 -25 5C 10 25 20 Ta = 7 Collector current IC (mA) VCE = 5 V 50 5 2 1 0 0.2 0.6 0.8 0.4 Base to emitter voltage VBE (V) 1.0 DC Current Transfer Ratio vs. Collector Current DC current transfer ratio hFE 500 VCE = 5 V Pulse 200 Ta = 75C 100 25 -25 50 20 10 5 1 2 10 20 50 5 Collector current IC (mA) 100 3 2SD1609, 2SD1610 Collector to emitter saturation voltage VCE(sat) (V) Base to emitter saturation voltage VBE(sat) (V) Saturation Voltage vs. Collector Current 5 IC = 10 IB Pulse 2 VBE(sat) 1.0 0.5 Ta = -25C 75 0.2 VCE(sat) 25 75 25 25C 0.1 Ta = - 0.05 1 2 5 20 50 10 Collector current IC (mA) 100 Gain Bandwidth Product vs. Collector Current Gain bandwidth product fT (MHz) 500 VCE = 10 V 200 100 50 20 10 5 0.5 5 10 20 1.0 2 Collector current IC (mA) 50 Collector output capacitance Cob (pF) Collector Output Capacitance vs. Collector to Base Voltage 50 10 5 2 1.0 0.5 4 f = 1 MHz IE = 0 20 1 20 50 100 2 5 10 Collector to base voltage VCB (V) 2SD1609, 2SD1610 When using this document, keep the following in mind: 1. 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