DATA SHEET MOS INTEGRATED CIRCUIT MC-458CB641ES,458CB641PS,458CB641XS 8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM) Description The MC-458CB641ES, MC-458CB641PS and MC-458CB641XS are 8,388,608 words by 64 bits synchronous dynamic RAM module (Small Outline DIMM) on which 4 pieces of 128M SDRAM: PD45128163 are assembled. These modules provide high density and large quantities of memory in a small space without utilizing the surfacemounting technology on the printed circuit board. Decoupling capacitors are mounted on power supply line for noise reduction. Features * 8,388,608 words by 64 bits organization * Clock frequency and access time from CLK Part number /CAS latency Clock frequency (MAX.) Access time from CLK (MAX.) CL = 3 125 MHz 6 ns CL = 2 100 MHz 6 ns MC-458CB641ES-A10 CL = 3 100 MHz 6 ns CL = 2 77 MHz 7 ns MC-458CB641PS-A80 CL = 3 125 MHz 6 ns CL = 2 100 MHz 6 ns CL = 3 100 MHz 6 ns CL = 2 77 MHz 7 ns MC-458CB641XS-A80 CL = 3 125 MHz 6 ns CL = 2 100 MHz 6 ns MC-458CB641XS-A10 CL = 3 100 MHz 6 ns CL = 2 77 MHz 7 ns MC-458CB641ES-A80 MC-458CB641PS-A10 * Fully Synchronous Dynamic RAM, with all signals referenced to a positive clock edge * Pulsed interface * Possible to assert random column address in every cycle * Quad internal banks controlled by BA0, BA1 (Bank Select) * Programmable burst-length: 1, 2, 4, 8 and Full Page * Programmable wrap sequence (Sequential / Interleave) * Programmable /CAS latency (2, 3) * Automatic precharge and controlled precharge * CBR (Auto) refresh and self refresh * Single 3.3 V 0.3 V power supply The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local Elpida Memory, Inc. for availability and additional information. Document No. E0069N10 (1st edition) (Previous No. M14015EJ5V0DS00) Date Published January 2001 CP (K) Printed in Japan Elpida Memory, Inc. is a joint venture DRAM company of NEC Corporation and Hitachi, Ltd. MC-458CB641ES, 458CB641PS, 458CB641XS * LVTTL compatible * 4,096 refresh cycles/64 ms * Burst termination by Burst Stop command and Precharge command * 144-pin small outline dual in-line memory module (Pin pitch = 0.8 mm) * Unbuffered type * Serial PD Ordering Information Part number Clock frequency Package Mounted devices MHz (MAX.) MC-458CB641ES-A80 125 MHz 144-pin Small Outline DIMM 4 pieces of PD45128163G5 (Rev. E) MC-458CB641ES-A10 100 MHz (Socket Type) (10.16mm (400) TSOP (II)) MC-458CB641PS-A80 125 MHz Edge connector: Gold plated 4 pieces of PD45128163G5 (Rev. P) MC-458CB641PS-A10 100 MHz 25.4 mm height (10.16mm (400) TSOP (II)) MC-458CB641XS-A80 125 MHz 4 pieces of PD45128163G5 (Rev. X) MC-458CB641XS-A10 100 MHz (10.16mm (400) TSOP (II)) 2 Data Sheet E0069N10 MC-458CB641ES, 458CB641PS, 458CB641XS Pin Configuration 144-pin Dual In-line Memory Module Socket Type (Edge connector: Gold plated) 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32 34 36 38 40 42 44 46 48 50 52 54 56 58 60 62 64 66 68 70 72 74 76 78 80 82 84 86 88 90 92 94 96 98 100 102 104 106 108 110 112 114 116 118 120 122 124 126 128 130 132 134 136 138 140 142 144 Vss DQ 32 DQ 33 DQ 34 DQ 35 Vcc DQ 36 DQ 37 DQ 38 DQ 39 Vss DQMB4 DQMB5 Vcc A3 A4 A5 Vss DQ 40 DQ 41 DQ 42 DQ 43 Vcc DQ 44 DQ 45 DQ 46 DQ 47 Vss NC NC Vss DQ 0 DQ 1 DQ 2 DQ 3 VCC DQ 4 DQ 5 DQ 6 DQ 7 Vss DQMB0 DQMB1 VCC A0 A1 A2 Vss DQ 8 DQ 9 DQ 10 DQ 11 VCC DQ 12 DQ 13 DQ 14 DQ 15 Vss NC NC CLK0 CKE0 Vcc Vcc /RAS /CAS /WE NC /CS0 NC NC NC NC CLK1 Vss Vss NC NC NC NC VCC Vcc DQ 16 DQ 48 DQ 17 DQ 49 DQ 18 DQ 50 DQ 19 DQ 51 Vss Vss DQ 20 DQ 52 DQ 21 DQ 53 DQ 22 DQ 54 DQ 23 DQ 55 Vcc Vcc A6 A7 A8 BA0 (A13) Vss Vss A9 BA1 (A12) A10 A11 Vcc Vcc DQMB2 DQMB6 DQMB3 DQMB7 Vss Vss DQ 24 DQ 56 DQ 25 DQ 57 DQ 26 DQ 58 DQ 27 DQ 59 VCC Vcc DQ 28 DQ 60 DQ 29 DQ 61 DQ 30 DQ 62 DQ 31 DQ 63 Vss Vss SDA SCL VCC Vcc 1 3 5 7 9 11 13 15 17 19 21 23 25 27 29 31 33 35 37 39 41 43 45 47 49 51 53 55 57 59 61 63 65 67 69 71 73 75 77 79 81 83 85 87 89 91 93 95 97 99 101 103 105 107 109 111 113 115 117 119 121 123 125 127 129 131 133 135 137 139 141 143 Data Sheet E0069N10 /xxx indicates active low signal. A0 - A11 : Address Inputs [Row: A0 - A11, Column: A0 - A8] BA0(A13),BA1(A12) : SDRAM Bank Select DQ0 - DQ63 : Data Inputs/Outputs CLK0, CLK1 : Clock Input CKE0 : Clock Enable Input /CS0 : Chip Select Input /RAS : Row Address Strobe /CAS : Column Address Strobe /WE : Write Enable DQMB0 - DQMB7 : DQ Mask Enable SDA : Serial Data I/O for PD SCL : Clock Input for PD VCC : Power Supply VSS : Ground NC : No Connection 3 MC-458CB641ES, 458CB641PS, 458CB641XS Block Diagram /WE /CS0 LDQM DQMB0 DQ 0 /CS /WE LDQM DQ 0 DQMB4 DQ 32 DQ 0 DQ 1 DQ 1 DQ 33 DQ 1 DQ 2 DQ 2 DQ 34 DQ 2 DQ 3 DQ 3 DQ 35 DQ 3 DQ 4 DQ 4 DQ 36 DQ 4 DQ 5 DQ 5 DQ 37 DQ 5 DQ 6 DQ 6 DQ 38 DQ 6 DQ 7 DQ 7 DQ 39 DQ 7 UDQM D0 UDQM DQMB1 DQ 8 DQ 15 DQMB5 DQ 40 DQ 9 DQ 14 DQ 41 DQ 14 DQ 10 DQ 13 DQ 42 DQ 13 DQ 11 DQ 12 DQ 43 DQ 12 DQ 12 DQ 11 DQ 44 DQ 11 DQ 13 DQ 10 DQ 45 DQ 10 DQ 14 DQ 9 DQ 46 DQ 9 DQ 15 DQ 8 DQ 47 DQ 8 DQMB2 DQ 16 DQ 7 DQMB6 DQ 48 DQ 7 DQ 17 DQ 6 DQ 49 DQ 6 DQ 18 DQ 5 DQ 50 DQ 5 DQ 19 DQ 4 DQ 51 DQ 4 DQ 20 DQ 3 DQ 52 DQ 3 DQ 21 DQ 2 DQ 53 DQ 2 DQ 22 DQ 1 DQ 54 DQ 1 DQ 23 DQ 0 DQ 55 DQ 0 LDQM /CS /WE D1 UDQM DQMB3 D2 DQ 15 LDQM /WE /CS D3 UDQM DQ 24 DQ 8 DQMB7 DQ 56 DQ 25 DQ 9 DQ 57 DQ 9 DQ 26 DQ 10 DQ 58 DQ 10 DQ 27 DQ 11 DQ 59 DQ 11 DQ 28 DQ 12 DQ 60 DQ 12 DQ 29 DQ 13 DQ 61 DQ 13 DQ 30 DQ 14 DQ 62 DQ 14 DQ 31 DQ 15 DQ 63 DQ 15 SERIAL PD /WE /CS DQ 8 VCC D0 - D3 C SCL VSS SDA A0 A1 10 CLK0 CLK : D0 - D3 /RAS A0 - A11 A0 - A11 : D0 - D3 BA0 A13 : D0 - D3 BA1 A12 : D0 - D3 Remarks 1. D0 - D3: PD45128163 (2M words x 16 bits x 4 banks) 2. The value of all resistors is 10 . 4 D0 - D3 A2 Data Sheet E0069N10 CLK1 10 pF /RAS : D0 - D3 /CAS /CAS : D0 - D3 CKE0 CKE : D0 - D3 MC-458CB641ES, 458CB641PS, 458CB641XS Electrical Specifications * All voltages are referenced to VSS (GND). * After power up, wait more than 100 s and then, execute power on sequence and CBR (Auto) refresh before proper device operation is achieved. Absolute Maximum Ratings Parameter Symbol Condition Rating Unit Voltage on power supply pin relative to GND VCC -0.5 to +4.6 V Voltage on input pin relative to GND VT -0.5 to +4.6 V Short circuit output current IO 50 mA Power dissipation PD 4 W Operating ambient temperature TA 0 to +70 C Storage temperature Tstg -55 to +125 C Caution Exposing the device to stress above those listed in Absolute Maximum Ratings could cause permanent damage. The device is not meant to be operated under conditions outside the limits described in the operational section of this specification. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. Recommended Operating Conditions MIN. TYP. MAX. Unit Supply voltage Parameter Symbol VCC Condition 3.0 3.3 3.6 V High level input voltage VIH 2.0 VCC + 0.3 V Low level input voltage VIL -0.3 + 0.8 V Operating ambient temperature TA 0 70 C MAX. Unit pF Capacitance (TA = 25 C, f = 1 MHz) Parameter Input capacitance Data input/output capacitance Symbol Test condition MIN. CI1 A0 - A11, BA0(A13), BA1(A12), /RAS, /CAS, /WE 15 30 CI2 CLK0 23 37 CI3 CKE0 15 26 CI4 /CS0 15 26 CI5 DQMB0 - DQMB7 5 10 CI/O DQ0 - DQ63 5 12 Data Sheet E0069N10 TYP. pF 5 MC-458CB641ES, 458CB641PS, 458CB641XS DC Characteristics (Recommended Operating Conditions unless otherwise noted) Parameter Operating current Symbol ICC1 Test condition Burst length = 1, tRC tRC(MIN.) MIN. /CAS latency = 2 /CAS latency = 3 Precharge standby current in power down mode Precharge standby current in ICC2P ICC2PS ICC2N non power down mode power down mode Active standby current in ICC3P ICC3PS ICC3N non power down mode -A80 440 -A10 440 CKE VIL(MAX.), tCK = 15 ns 4 CKE VIL(MAX.), tCK = 4 CKE VIH(MIN.), tCK = 15 ns, /CS VIH(MIN.), 80 CKE VIH(MIN.), tCK = , Input signals are stable. 32 CKE VIL(MAX.), tCK = 15 ns 20 CKE VIL(MAX.), tCK = 16 CKE VIH(MIN.), tCK = 15 ns, /CS VIH(MIN.), 120 ICC4 CKE VIH(MIN.), tCK = , Input signals are stable. tCK tCK(MIN.), IO = 0 mA /CAS latency = 2 (Burst mode) /CAS latency = 3 CBR (Auto) refresh current 440 440 mA 1 mA mA mA mA Input signals are changed one time during 30 ns. ICC3NS Operating current -A80 -A10 Unit Notes Input signals are changed one time during 30 ns. ICC2NS Active standby current in MAX. ICC5 tRC tRC(MIN.) /CAS latency = 2 /CAS latency = 3 Self refresh current ICC6 CKE 0.2 V Input leakage current II(L) VI = 0 to 3.6 V, All other pins not under test = 0 V Output leakage current IO(L) High level output voltage Low level output voltage 80 -A80 580 -A10 440 -A80 700 -A10 560 -A80 920 -A10 920 -A80 920 -A10 920 mA 2 mA 3 8 mA -4 +4 A DOUT is disabled, VO = 0 to 3.6 V -1.5 +1.5 A VOH IO = - 4.0 mA 2.4 VOL IO = + 4.0 mA V 0.4 V Notes 1. ICC1 depends on output loading and cycle rates. Specified values are obtained with the output open. In addition to this, ICC1 is measured on condition that addresses are changed only one time during tCK(MIN.). 2. ICC4 depends on output loading and cycle rates. Specified values are obtained with the output open. In addition to this, ICC4 is measured on condition that addresses are changed only one time during tCK(MIN.). 3. ICC5 is measured on condition that addresses are changed only one time during tCK(MIN.). 6 Data Sheet E0069N10 MC-458CB641ES, 458CB641PS, 458CB641XS AC Characteristics (Recommended Operating Conditions unless otherwise noted) Test Conditions Parameter AC high level input voltage / low level input voltage Input timing measurement reference level Transition time (Input rise and fall time) Output timing measurement reference level Value Unit 2.4 / 0.4 V 1.4 V 1 ns 1.4 V tCK tCH CLK tCL 2.4 V 1.4 V 0.4 V tSETUP tHOLD Input 2.4 V 1.4 V 0.4 V tAC tOH Output Data Sheet E0069N10 7 MC-458CB641ES, 458CB641PS, 458CB641XS Synchronous Characteristics Parameter Clock cycle time Access time from CLK Symbol -A80 -A10 Unit MIN. MAX. MIN. MAX. Note /CAS latency = 3 tCK3 8 (125 MHz) 10 (100 MHz) ns /CAS latency = 2 tCK2 10 (100 MHz) 13 (77 MHz) ns /CAS latency = 3 tAC3 6 6 ns 1 /CAS latency = 2 tAC2 6 7 ns 1 CLK high level width tCH 3 3 ns CLK low level width tCL 3 3 ns /CAS latency = 3 tOH3 3 3 ns 1 /CAS latency = 2 tOH2 3 3 ns 1 tLZ 0 0 ns /CAS latency = 3 tHZ3 3 6 3 6 ns /CAS latency = 2 tHZ2 3 6 3 7 ns Data-in setup time tDS 2 2 ns Data-in hold time tDH 1 1 ns Address setup time tAS 2 2 ns Address hold time tAH 1 1 ns CKE setup time tCKS 2 2 ns CKE hold time tCKH 1 1 ns CKE setup time (Power down exit) tCKSP 2 2 ns Command (/CS0, /RAS, /CAS, /WE, t CMS 2 2 ns tCMH 1 1 ns Data-out hold time Data-out low-impedance time Data-out high-impedance time DQMB0 - DQMB7) setup time Command (/CS0, /RAS, /CAS, /WE, DQMB0 - DQMB7) hold time Note 1. Output load Z = 50 Output 50 pF Remark These specifications are applied to the monolithic device. 8 Data Sheet E0069N10 MC-458CB641ES, 458CB641PS, 458CB641XS Asynchronous Characteristics Parameter Symbol -A80 MIN. -A10 MAX. MIN. Unit MAX. ACT to REF/ACT command period (Operation) tRC 70 70 ns REF to REF/ACT command period (Refresh) tRC1 70 78 ns ACT to PRE command period tRAS 48 PRE to ACT command period tRP 20 20 ns Delay time ACT to READ/WRITE command tRCD 20 20 ns ACT(one) to ACT(another) command period tRRD 16 20 ns Data-in to PRE command /CAS latency = 3 tDPL3 8 10 ns period /CAS latency = 2 tDPL2 8 10 ns Data-in to ACT(REF) command /CAS latency = 3 tDAL3 1CLK+20 1CLK+20 ns period (Auto precharge) tDAL2 1CLK+20 1CLK+20 ns tRSC 2 2 CLK tT 0.5 /CAS latency = 2 Mode register set cycle time Transition time Refresh time (4,096 refresh cycles) tREF 120,000 30 64 Data Sheet E0069N10 50 1 Note 120,000 ns 30 ns 64 ms 9 MC-458CB641ES, 458CB641PS, 458CB641XS Serial PD (1/2) Byte No. Function Described Hex Bit 7 Bit 6 Bit 5 Bit 4 Bit 3 Bit 2 Bit 1 Bit 0 0 Defines the number of bytes written into serial PD memory 80H 1 0 0 0 0 0 0 0 128 bytes 1 Total number of bytes of serial PD memory 08H 0 0 0 0 1 0 0 0 256 bytes 2 Fundamental memory type 04H 0 0 0 0 0 1 0 0 SDRAM 3 Number of rows 0CH 0 0 0 0 1 1 0 0 12 rows 4 Number of columns 09H 0 0 0 0 1 0 0 1 9 columns 5 Number of banks 01H 0 0 0 0 0 0 0 1 1 bank 6 Data width 40H 0 1 0 0 0 0 0 0 64 bits 7 Data width (continued) 00H 0 0 0 0 0 0 0 0 0 8 Voltage interface 01H 0 0 0 0 0 0 0 1 LVTTL 9 CL = 3 Cycle time 10 CL =3 Access time -A80 80H 1 0 0 0 0 0 0 0 8 ns -A10 A0H 1 0 1 0 0 0 0 0 10 ns -A80 60H 0 1 1 0 0 0 0 0 6 ns -A10 60H 0 1 1 0 0 0 0 0 6 ns 11 DIMM configuration type 00H 0 0 0 0 0 0 0 0 None 12 Refresh rate/type 80H 1 0 0 0 0 0 0 0 Normal 13 SDRAM width 10H 0 0 0 1 0 0 0 0 x16 14 Error checking SDRAM width 00H 0 0 0 0 0 0 0 0 None 15 Minimum clock delay 01H 0 0 0 0 0 0 0 1 1 clock 16 Burst length supported 8FH 1 0 0 0 1 1 1 1 1, 2, 4, 8, F 17 Number of banks on each SDRAM 04H 0 0 0 0 0 1 0 0 4 banks 18 /CAS latency supported 06H 0 0 0 0 0 1 1 0 2, 3 19 /CS latency supported 01H 0 0 0 0 0 0 0 1 0 20 /WE latency supported 01H 0 0 0 0 0 0 0 1 0 21 SDRAM module attributes 00H 0 0 0 0 0 0 0 0 22 SDRAM device attributes : General 0EH 0 0 0 0 1 1 1 0 23 CL = 2 Cycle time -A80 A0H 1 0 1 0 0 0 0 0 -A10 D0H 1 1 0 1 0 0 0 0 13 ns 24 CL = 2 Access time -A80 60H 0 1 1 0 0 0 0 0 6 ns 7 ns -A10 25-26 27 10 Notes tRP(MIN.) 70H 0 1 1 1 0 0 0 0 00H 0 0 0 0 0 0 0 0 10 ns -A80 14H 0 0 0 1 0 1 0 0 20 ns -A10 14H 0 0 0 1 0 1 0 0 20 ns -A80 10H 0 0 0 1 0 0 0 0 16 ns 28 tRRD(MIN.) -A10 14H 0 0 0 1 0 1 0 0 20 ns 29 tRCD(MIN.) -A80 14H 0 0 0 1 0 1 0 0 20 ns -A10 14H 0 0 0 1 0 1 0 0 20 ns 30 tRAS(MIN.) -A80 30H 0 0 1 1 0 0 0 0 48 ns -A10 32H 0 0 1 1 0 0 1 0 50 ns 31 Module bank density 10H 0 0 0 1 0 0 0 0 64M bytes Data Sheet E0069N10 MC-458CB641ES, 458CB641PS, 458CB641XS (2/2) Byte No. 32 33 34 35 Function Described 64-71 72 Bit 3 Bit 2 Bit 1 Bit 0 Notes 0 1 0 0 0 0 0 2 ns signal setup time -A10 20H 0 0 1 0 0 0 0 0 2 ns Command and address -A80 10H 0 0 0 1 0 0 0 0 1 ns signal hold time -A10 10H 0 0 0 1 0 0 0 0 1 ns Data signal input setup time -A80 20H 0 0 1 0 0 0 0 0 2 ns -A10 20H 0 0 1 0 0 0 0 0 2 ns -A80 10H 0 0 0 1 0 0 0 0 1 ns 1 ns Data signal input hold time 10H 0 0 0 1 0 0 0 0 00H 0 0 0 0 0 0 0 0 -A80 12H 0 0 0 1 0 0 1 0 1.2 A -A10 12H 0 0 0 1 0 0 1 0 1.2 A -A80 E7H 1 1 1 0 0 1 1 1 -A10 4DH 0 1 0 0 1 1 0 1 -A80 64H 0 1 1 0 0 1 0 0 100 MHz -A10 64H 0 1 1 0 0 1 0 0 100 MHz Intel specification /CAS -A80 87H 1 0 0 0 0 1 1 1 latency support -A10 85H 1 0 0 0 0 1 0 1 SPD revision Checksum for bytes 0 - 62 Manufacture's JEDEC ID code Manufacturing location 91-92 Revision code 93-94 Manufacturing date 95-98 Assembly serial number 127 Bit 4 0 Manufacture's P/N 126 Bit 5 20H 73-90 99-125 Bit 6 -A80 -A10 63 Bit 7 Command and address 36-61 62 Hex Mfg specific Intel specification frequency Timing Chart Refer to the PD45128441, 45128841, 45128163 Data sheet (E0031N). Data Sheet E0069N10 11 MC-458CB641ES, 458CB641PS, 458CB641XS Package Drawing 144-PIN DUAL IN-LINE MODULE (SOCKET TYPE) A (AREA B) Y M1 (AREA B) R N Q M L M2 (AREA A) S A H (OPTIONAL HOLES) U1 U2 C I T E B D A1 (AREA A) F detail of A part W D2 D1 X V ITEM A MILLIMETERS 67.6 A1 67.60.15 B 23.2 C 29.0 D 4.6 D1 1.50.10 D2 4.0 E F 32.8 3.7 H 0.8 (T.P.) I 3.3 L M 20.0 25.40.15 M1 M2 N 3.4 22.0 3.8 MAX. Q R2.0 R 4.00.10 1.8 S T 1.00.1 U1 U2 3.2 MIN. 4.0 MIN. V 0.25 MAX. W 0.60.05 X 2.55 MIN. Y 2.0 MIN. M144S-80A15 12 Data Sheet E0069N10 MC-458CB641ES, 458CB641PS, 458CB641XS [MEMO] Data Sheet E0069N10 13 MC-458CB641ES, 458CB641PS, 458CB641XS [MEMO] 14 Data Sheet E0069N10 MC-458CB641ES, 458CB641PS, 458CB641XS NOTES FOR CMOS DEVICES 1 PRECAUTION AGAINST ESD FOR SEMICONDUCTORS Note: Strong electric field, when exposed to a MOS device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. Environmental control must be adequate. When it is dry, humidifier should be used. It is recommended to avoid using insulators that easily build static electricity. Semiconductor devices must be stored and transported in an anti-static container, static shielding bag or conductive material. All test and measurement tools including work bench and floor should be grounded. The operator should be grounded using wrist strap. Semiconductor devices must not be touched with bare hands. Similar precautions need to be taken for PW boards with semiconductor devices on it. 2 HANDLING OF UNUSED INPUT PINS FOR CMOS Note: No connection for CMOS device inputs can be cause of malfunction. If no connection is provided to the input pins, it is possible that an internal input level may be generated due to noise, etc., hence causing malfunction. CMOS devices behave differently than Bipolar or NMOS devices. Input levels of CMOS devices must be fixed high or low by using a pull-up or pull-down circuitry. Each unused pin should be connected to V DD or GND with a resistor, if it is considered to have a possibility of being an output pin. All handling related to the unused pins must be judged device by device and related specifications governing the devices. 3 STATUS BEFORE INITIALIZATION OF MOS DEVICES Note: Power-on does not necessarily define initial status of MOS device. Production process of MOS does not define the initial operation status of the device. Immediately after the power source is turned ON, the devices with reset function have not yet been initialized. Hence, power-on does not guarantee out-pin levels, I/O settings or contents of registers. Device is not initialized until the reset signal is received. Reset operation must be executed immediately after power-on for devices having reset function. Data Sheet E0069N10 15 MC-458CB641ES, 458CB641PS, 458CB641XS CAUTION FOR HANDLING MEMORY MODULES When handling or inserting memory modules, be sure not to touch any components on the modules, such as the memory IC, chip capacitors and chip resistors. It is necessary to avoid undue mechanical stress on these components to prevent damaging them. When re-packing memory modules, be sure the modules are NOT touching each other. Modules in contact with other modules may cause excessive mechanical stress, which may damage the modules. * The information in this document is current as of September, 2000. The information is subject to change without notice. For actual design-in, refer to the latest publications of Elpida's data sheets or data books, etc., for the most up-to-date specifications of Elpida semiconductor products. Not all products and/or types are available in every country. Please check with an Elpida Memory, Inc. for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without prior written consent of Elpida. Elpida assumes no responsibility for any errors that may appear in this document. * Elpida does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of Elpida semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of Elpida or others. * Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. Elpida assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. * While Elpida endeavours to enhance the quality, reliability and safety of Elpida semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in Elpida semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. * Elpida semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of Elpida semiconductor products is "Standard" unless otherwise expressly specified in Elpida's data sheets or data books, etc. If customers wish to use Elpida semiconductor products in applications not intended by Elpida, they must contact an Elpida Memory, Inc. in advance to determine Elpida's willingness to support a given application. (Note) (1) "Elpida" as used in this statement means Elpida Memory, Inc. and also includes its majority-owned subsidiaries. (2) "Elpida semiconductor products" means any semiconductor product developed or manufactured by or for Elpida (as defined above). M8E 00. 4