MIL SPECS HUE D MM 0000125 O03eee3 T MNILS TUINCH-POUND_T MIL-S-19500/2058 11_ JUNE _1990 SUPERSEDING MIL-S-19500/205A 16 February 1966 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, GERMANIUM, LOW LEVEL, FORWARD-VOLTAGE-REFERENCE TYPE 1N3287 JAN, JANTX, AND JANTXY This specification is approved for use by all Depart- ments and Agencies of the Department of Defense. 1. SCOPE 1.1 Scope. This specification covers the detail requirements for a germanium semiconductor Three diode. levels of product assurance are provided for each device type as specified in MIL-S-19500, 1.2 Physical dimensions. See figure 1. 1.3 Maximum ratings. Operating ambient temperature: ~65C to +75C. Storage temperature: -65 C to +100 C. Barometric pressure, reduced: 8 mmilg. J i | VR | Io If lFSy I | iv (pk)| mA de | mA de | 1/120 s | \ 1 | ij 6 50 | 100 | O.5A | | | | ( | | 1.4 Primary electrical characteristics. The diode should have salient characteristics at ambient temperature of +25 #3C, unless otherwise specified. |. 7 Ve Tp Ip | Ip = lm de |Yp=s2Vdc |Vp = 6 V (pk) | | Min. 0.208 V dc q |Max. 0.312 Vide | 10 pA 30 yA dc | | be of use in improving this document should be addressed to: Commander, Defense Electronics 1 Supply Center, ATTN: DESC-ECT, 1507 Wilmington Pike, Dayton, OH 45444-5280 by using the | sel f-addressed Standardization Document Proposal (DD Form 1426) appearing at the end of this TBeneticTal comments (recommendations, additions, deletions) and any pertinent data which may 1 | document or by letter. | AMSC N/A 1 of 10 FSC 5961 DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.MIL SPECS W4E D Ml O000125 0032224 1 MEMILS MIL -S-1900/2058 2. APPLICABLE DOCUMENTS 2.1 Sovermens doquments. 2.1.1 { 1 , and handbooks, The following spectficattions, standards, and handbooks form @ pal r 0 the extent specified herein, Unless otherwise specified, the issues of ae documents are those listed in the tsgue of the Oepartment of Defense Index of ifications and Standards (BODISS) and gupplement therete, cited tn the solicitattan (see 6,2), } SPECIFICATION MILITARY " MIL =$219809 = Gemtconducter Devices, General Specification for. STANDARD MILITARY MIL ~STD~750 = Test Methods for Semtconductor Devices. (Unless otherwise tndicated, copies of federal and military spectfications, standards, and handbooks are avatiseble from the Standardization Documents Order Desk, Building 40, 700 Robbins Avenue, Philadelphia, PA 19331-5094.) 2.2 Order of prececenst. In the eyent of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Wothing fn this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Asser ete getall sree rea nace The individual {tem requirements shall be im accordance with MIL-3- and ag gpecitied herein. 3.2 Abbreyiations, symbols and definitions. Abbreviations, symbols, and definitions used herein sha as Speciried th oor . 3.3 Design, constructions ang phere dimensions. The design, construction, and physical dimensions shall be as gpecTfied in WIL-s- > and figure 1 herein. 3.3.1 Lead material and Finish. Lead matertal shall be dumet wire. Lead finish shall be tin plated or solder plated, re a choice of lead material or finish is desired, it shall be specified in the contract or purchase order (see 6,2). 3.4 Marking. . Marking shat! be in accerdance with MIL-S-19500, except at the option of the nanufactirerthe foliawing marking may be omitted from the body of the diode. A. Manufacturer's identification. 8, Country of origin, C. The 1N" portion of the type designation. 4. QUALITY ASSURANCE PROVISIONS 4.1 Sampling and fnspac kien: Sampling and inspection shall be in accerdance with MIL-S-39500, and as specified hereth, : . wie epi itication inspection. Qualiffcation inspection shall be in accordance withMIL SPEC NOTES: Wm Ww Nn * TT S 44E D MM 0000325 0032225 3 MENILS MIL-S-19500/2058 j ' 1 -085 | .107 | 2.16 | 3.30 | 4 at { | i 1,000 11.500 125.40 138.10 | 3 1 To | 1 -019 | .022 | .46 | 56 11,2,3 t | T Tt {Ltr Dimensifons | T T T ( ! Inches ! Miilimeters INotes | | | q ] t | {Min | Max | Min | Max | | | | 1 | j | | .230 | .300 | 5.84 f 7.62 | q 1 | | J ! | | 1 qT | | o [Oo | [> I 1 | { | T | | | T | T | The specified lead diameter applies in the zone between .050 (1.27 om) and 1.000 (25.40 mm) from the diode body. Outside of this zone the lead diameter {is not controlled. Gold plated, tinned, or solder plated leads may be supplied providing units conform to subgroups 2 and 4 of group B fnpsection and subgroup 1 of group C inspection. Both leads shal] be within the specified dimension. The minimum body diameter shall be maintained over 0.15 (0.38 mm) of body length. Metric equivalents are given for general information only. FIGURE 1. Semiconductor device, diode, type 1N3287 (DO-7).MIL SPECS WUE D @@ O0001eS OO3eeecb 5 MENILS MIL-S-19500/205B 4,3 screening (JANTX and JANTXV levels only). Screening shall be in accordance with MIL-S-1 e and a8 specifted herein. The following measurements shall be made tn accordance with table } herein. Devices that exceed the limits of table I herein shall not be acceptable, Measurements | Screen (see table i! . - of MIL-$=19500) JANTX and JANTXY levels 1 3 lat = 100% of initial reading or 5 yA whichever is |Ta = maximum rated storage { temperature = ~T 10 . ITest condition C, Ta at a 155 C, t = 48-brs. minimum 4. T 4 | 1 TR and Ve} 1 | | 12 ISee 4.3.1 | | ae! | t | | | 13 {Subgroup 2 of table I herein; | | | | _. |preater aVF1 = +102 of ; nitial value - 4.3.1 Power burn-in conditions. Power burn-in conditions are as follows: All devices shall be operated at +25 C 3C under the fotlowing condition: : Ip = 50 mA de _ See 4.5.3. 4.4 Quality conformance inspection. Quality conformance inspection shall be in accordance with MIL-S-I9500. , 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-S-19500, and table T herein. {End-potnt electrical measurements shall be in accordance with the applicable steps of teble IV herein.) 4.4.2 Group B inspetion. Group B inspection shall be conducted in accordance with the conditions specitied for subgroup testing in table [Yb of MIL-S-19500, and table II herein. Electrical measurements (end-points) and delta requirements shall be in accordance with the applicable steps of table IV herein. . 4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for subgroup testing in table V of MIL-S-19500, and table III herein. Electrical measurements (end-points) and delta requirements shall be in accordance with the applicable steps of table IV herein. 4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows. 4 45 Pulse meagurements. Conditions for puls measurements shall be as specified in section 0 -STD-750.. .HUE D MB 0000125 OO3eee? 7? MNILS MIL SPECS MIL-S-19500/205B Group A inspection. TABLE I. MIL-STD-750 Conditions 1/ Inspection v o 3 9 wv > < < J 2.3.9 -- N m o o = 8 8 o 4 Po ea ee ee ee N Le a ee oe 2 ~ - _ ~ a 7 we ir a a a ~ > x fe aaaey cn eS coy SO re SE SS RE ce a TS ne ES ce OD eee SE ie SS es Se SS ce nine nS SE mn SY - @ = = ,.e a - Pe ~~ ; a a -@ a E wo = o 2 a @ in Zo >> #72 Bos 2" = So o 2 PP a+ -_ - Ni w ~~ 8 se " " " * BB > od] uw i xe uc" ot $ _ - > > os om Ge Ht ee ont aN! ~~ - -_ wo 2 & $F 2 _3 _ _~F_ - o a S eo = oe a Cd a =) Go NS] OD a e c # + wo wo 6 a go uw ad 2 + S - c c ae sls + 558 BF FF 8 2E of - 3s > > o Yo 2 2 2 2 2 s s? 2 al = 0 eo w 2 a a 2] - 3 si - Ss) & a vn YW & 3 3 3 s a wv ~ s os 5 $ & w eo + 6 en ss = F 3 - - > w | a ae a =z =z =z tl pling plan see MIL-S-19500. 1/ For samMIL SPECS TABLE 12 44E D M@@ 0000125 0032228 9 MEMILS MIL-S-19500/2058 Group B inspection for JAN, JANTX, and JANTXY. Inspection 2/ MIL~STD-750 Conditions Subgroup I Solderability R esistance to solvents Subgroup 2 Thermal shock (temperature cycling) ' a ee Hermetic seal a. Fine leak b. Gross leak Electrical eeasurements Subgroup 3 Steady-state operation life Electrical measurements Subgroup 4 Pecap internal visual < (design verification) * Subgroup Therma) resistance Subgroup 6 High-temperature life nanoperating) ee ee ee ee Electrical measurements - { 2026 1022 1081 1071 1027 2078 4081 1032 / For sampling plan see NIL~$-39500, Test condition A Test condition H Test condition E See table IV, steps 1, 2, 3, 4, 5, and 4.5.2 Ip = 50 mA de See table IV, steps 1, 2, 5, 6, 7, and 4.5.2 Visual criteria in accordance with qualified design Qualification only Ta = *100C, t = 340 hours See tablelV, steps 1, 2, , 6, 7, and 4.5.2 ee eeMIL SPECS WHE D MM 0000125 0032229 0 MBNILS MIL-S-19500/205B TABLE III. Group C inspection (all quality levels). r MIL-STD-750 ! Inspection 1/ } | : | { |Method Conditions Subgroup 1 | Physical dimensions 2066 See figure 1 | Subgroup 2 | Thermal shack (glass 1056 | Test condition A Z " strain) | Terminal strength 2036 Test condition A, 4 1b, t = 15 43 5 | Hermetic seal 1073 | a. Fine leak Test condition H b. Gross leak Test condition | Moisture resistance 1021 External visual 2071 { | Electrical measurements See table [V, steps 1, 2, 3, 4, 5, and 4.5.2 Subgroup 3 Shock 2016 Nonoperating at 1500 g: t = 0.5 ms, 5 blows each | orientation X, Yl, and Y2 | Vibration, variable 2056 | frequency | | Constant acceleration 2066 Nonoperating: g = 20,000 min, 1 minute in each | orientation X, Yl, and Y2 | Electrical measurements See table IV, steps 1, 2, 3, 4, 5, and 4.5.2 Subgroup 4 Salt atmosphere 1041 (corrosion) Subgroup 5 N/A Subgroup 6 Steady-state operation 1026 | Ip = 0 mA dc, Ta at 25C life Io = 50 mA de, vA at 80 V pk t = 1,000 hours Electrical measurements See table IV, steps 1, 2, 5, 6, 7, and 4.5.2 d/ For sampling plan see MILS-19500.MIL SPECS 44E D MM 0000125 0032230 7 MNILS MIL-S-19500/205B TABLE IV. Groups A, B, and C electrical measurements. Step Inspection MIL -STD~750 Symbol Limits unit | | Method Conditions Min Max 1. Forward voltage 1/| 4011 | Ig = 100 mA dc Ve2 1.0 IV dc 2. Forward voltage 1/{ 4011 | Ip = 1 mM dc VF] 0.208 | 0.312 | de 3. Reverse current 4016 Va = 2 V de 1 Ipi 10 wA dc 4, | Reverse current 4016 | YR = 6 V de | Ipo 30 wA dc | 5. Dynamic resi stance| Ip = 1 mM dc Rp 60 ohms | | | | #8 Goris (rms) | 6. | Reverse current | | 4016 | Vp = 2 V de Ip3 | 15 uA dc | 7. | Reverse current | 4016 | Vp 6 Vide Ip 40 uA tc | | | | | | | | / See 4.5.1.MIL SPECS WHE D MM 0000125 0032231 5 MEMILS MIL-S-19500/2058 4.5.2 Time limit for end-points. End-points for qualification and quality conformance inspection shall be competed within 96 hours after completion of the last test fn the subgroup. 4.5.3 Power burn-in criteria. This test shall be conducted with a half-sine wave of the specified peak voltage impressed across the diode in the reverse direction followed by a helf-sine wave form of the specified average rectified current. The forward conduction angle of the rectified current shall not be greater than 160 nor less the 130, and the power shall be equal to or greater than that of a half-sine wave. 5. PACKAGING .1 eae ing requirements. The requirements for packaging shall be in accordance with MIL-S-19500. 6. NOTES {This section contains information of a general or explanatory nature that may be helpful, but is not mandatory.) 6.1 Notes. The notes specified in MIL-S-19500 are applicable to this specification. 6.2 Acquisition requirements. Acquisition documents should specify the following: a. Title, number, and date of the specification. b. Issue of DODISS to be cited in the solicitation, and if required, the specific issue of individual documents referenced (see 2.1). c. Lead finish may be specified (see 3.3.1). 6.3 Substitution information. Devices covered by this specification are substitutable for the manufacturers and users Part or Identifying Number (PIN). This information in no way implies that manufacturers PIN's are suitable as a substitute for the military PIN. Military PIN Manufacturers Manufacturers and users CAGE code PI ce AO eee EE a ET RS A OY NE Oe A SD NE ce SAD DAS a