UT8512-20UCA - Aeroflex, Inc.

FEATURES

q20ns (3.3 volt supply) maximum address access time

qAsynchronous operation for compatibility with industry-

standard 512K x 8 SRAMs

qTTL compatible inputs and output levels, three-state

bidirectional data bus

qTypical radiation performance

- Total dose: 50krads

- >100krads(Si), for any orbit, using Aeroflex UTMC

patented shielded package

- SEL Immune >80 MeV-cm2/mg

- LETTH(0.25) = >10 MeV-cm2/mg

- Saturated Cross Section cm2 per bit, 5.0E-9

- <1E-8 errors/bit-day, Adams 90% geosynchronous

heavy ion

qPackaging options:

- 36-lead ceramic flatpack (3.42 grams)

- 36-lead flatpack shielded (10.77 grams)

qStandard Microcircuit Drawing 5962-99607

- QML T and Q compliant

INTRODUCTION

The QCOTSTM UT8Q512 Quantified Commercial Off-the-

Shelf product is a high-performance CMOS static RAM

organized as 524,288 words by 8 bits. Easy memory

expansion is provided by an active LOW Chip Enable (E),

an active LOW Output Enable (G), and three-state drivers.

This device has a power-down feature that reduces power

consumption by more than 90% when deselected.

Writing to the devic e i s accomplished by taking Chip Enable

one (E) input LOW and Write Enable (W) inputs LOW.

Data on the eight I/O pins (DQ0 through DQ7) is then written

into the location specified on the address pins (A0 through

A18). Reading from the device is accomplished by taking

Chip Enable one (E) and Output Enable (G) LOW while

forcing Write Enable (W) HIGH. Under these conditions,

the contents of the memory location specified by the address

pins will appear on the I/O pins.

The eight input/output pins (DQ0 through DQ7) are placed

in a high impedance state when the device is deselected (E,

HIGH), the outputs are disabled (G HIGH), or during a write

operation (E LOWand W LOW).

Standard Products

QCOTSTM UT8Q512 512K x 8 SRAM

Data Sheet

February, 2003

Memory Array

1024 Rows

512x8 Columns

Pre-Charge Circuit

Clk. Gen.

Row Select

I/O Circuit

Column Select

Data

Control

CLK

Gen.

A10

A11

A12

A13

A14

A15

A16

A17

A18

- DQ

Figure 1. UT8Q512 SRAM Block Diagram

PIN NAME S

DEVICE OPERATION

The UT8Q512 has three control inputs called Enable 1 (E), Write

Enable (W), and Output Enable (G); 19 address inputs, A(18:0);

and eight bidirectional data lines, DQ(7:0). E Device Enable

controls device selection, active, and standby modes. Asserting

E enables the device, causes IDD to rise to its active value, and

decodes the 19 address inputs to select one of 524,288 words in

the memory. W controls read and write operations. During a

read cycle, G must be asserted to enable the outputs.

Table 1. Device Operation Truth Table

Notes:

1. “X” is defined as a “don’t care” condition.

2. Device active; outputs disabled.

READ CYCLE

A combination of W greater than VIH

(min) and E less than VIL

(max) defines a read cycle. Read access time is measured from

the latter of Device Enable, Output Enable, or valid address to

valid data output.

SRAM Read Cycle 1, the Address Access in figure 3a, is

initiated by a change in address inputs while the chip is enabled

with G asserted and W deasserted. Valid data appears on data

outputs DQ(7:0) after the specified tAVQV is satisfied. Outputs

remain active throughout the entire cycle. As long as Device

Enable and Output Enable are active, the address inputs may

change at a rate equal to the minimum read cycle time (tAVAV).

SRAM read Cycle 2, the Chip Enable - Controlled Access in

figure 3b, is initiated by E going active while G remains asserted,

W remains deasserted, and the addresses remain stable for the

entire cycle. After the specified tETQV is satisfied, the eight-bit

word addressed by A(18:0) is accessed and appears at the data

outputs DQ(7:0).

SRAM read Cycle 3, the Output Enable - Controlled Access in

figure 3c, is initiated by G going active while E is asserted, W

is deasserted, and the addresses are stable. Read access time is

tGLQV unless tAVQV or tETQV have not been satisfied.

A(18:0) Address

DQ(7:0) Data Input/Output

EEnable

WWrite Enable

GOutput Enable

VDD Power

VSS Ground

1 36

2 35

3 34

4 33

5 32

6 31

7 30

8 29

9 28

10 27

11 26

12 25

13 24

14 23

15 22

16 21

17 20

18 19

Figure 2. 25ns SRAM Pinout (36)

A18

A17

A16

A15

DQ7

DQ6

VSS

VDD

DQ5

DQ4

A14

A13

A12

A11

A10

DQ0

DQ1

VDD

VSS

DQ2

DQ3

GWEI/O Mode Mode

X1X13-state Standby

X0 0 Data in Write

1103-state Read2

010Data out Read

WRITE CYCLE

A combination of W less than VIL(max) and E less than

VIL(max) defines a write cycle. The state of G is a “don’t care”

for a write cycle. The outputs are placed in the high-impedance

state when either G is greater than VIH(min), or when W is less

than VIL(max).

Write Cycle 1, the Write Enable - Controlled Access in figure

4a, is defined by a write terminated by W going high, with E

still active. The write pulse width is defined by tWLWH when the

write is initiated by W, and by tETWH when the write is initiated

by E. Unless the outputs have been previously placed in the high-

impedance state by G, the user must wait tWLQZ before applying

data to the nine bidirectional pins DQ(7:0) to avoid bus

contention.

Write Cycle 2, the Chip Enable - Controlled Access in figure

4b, is defined by a write terminated by the latter of E going

inactive. The write pulse width is defined by tWLEF when the

write is initiated by W, and by tETEF when the write is initiated

by the E going active. For the W initiated write, unless the

outputs have been previously placed in the high-impedance state

by G, the user must wait tWLQZ before applying data to the eight

bidirectional pins DQ(7:0) to avoid bus contention.

TYPICAL RADIATION HARDNESS

Table 2. Typical Radiation Hardness

Design Specifications1

Notes:

1. The SRAM will not latchup during radiation exposure under recommended

operating conditions.

2. 90% worst case particle environment, Geosynchronous orbit, 100 m ils of

Aluminum.

Total Dose 50 krad(Si) nominal

Heavy Ion

Error Rate2<1E-8 Errors/Bit-Day

ABSOLUTE MAXIMUM RATINGS1

(Referenced to VSS)

Notes:

1. Stresses outside the listed absolute maximum ratings may cause permanent damage to the device. This is a stress rating only, and functional operation of the device

at these or any other conditions beyond limits indicated in the operational sections of this specification is not recommended. Exposure to absolute maximum rating

conditions for extended periods may affect device reliability and performance.

2. Maximum junction temperature may be increased to +175°C during burn-in and steady-static life.

3. Test per MIL-STD-883, Method 1012.

RECOMMENDED OPERATING CONDITIONS

SYMBOL PARAMETER LIMITS

VDD DC supply voltage -0.5 to 4.6V

VI/O Voltage on any pin -0.5 to 4.6V

TSTG Storage temperature -65 to +150°C

PDMaximum power dissipation 1.0W

TJMaximum junction temperature 2+150°C

ΘJC Thermal resistance, junction-to-case310°C/W

IIDC input current ±10 mA

SYMBOL PARAMETER LIMITS

VDD Positive supply voltage 3.0 to 3.6V

TCCase temperature range (C) screening: -55° to +125°C

(E) screening: -40° to +125°C

VIN DC input voltage 0V to VDD

DC ELECTRICAL CHARACTERISTICS (Pre/Post-Radiation)*

(-55°C to +125°C for (C) screening and -40oC to +125oC for (W) screening) (VDD = 3.3V + 0.3)

Notes:

* Post-radiation performance guaranteed at 25°C per MIL-STD-883 Method 1019.

1. Measured only for initial qualification and after process or design changes that could affect input/output capacitance.

2. Supplied as a design limit but not guaranteed or tested.

3. Not more than one output may be shorted at a time for maximum duration of one second.

SYMBOL PARAMETER CONDITION MIN MAX UNIT

VIH High-level input voltage (CMOS) 2.0 V

VIL Low-level input voltage (CMOS) 0.8 V

VOL1 Low-level output voltage IOL = 8mA, VDD =3.0V 0.4 V

VOL2 Low-level output voltage IOL = 200µA,VDD =3.0V 0.08V

VOH1High-level output voltage IOH = -4mA,VDD =3.0V 2.4 V

VOH2High-level output voltage IOH = -200µA,VDD =3.0V VDD-0.10 V

CIN1Input capacitance ƒ = 1MHz @ 0V 10 pF

CIO1Bidirectional I/O capacitance ƒ = 1MHz @ 0V 12 pF

IIN Input leakage current VSS < VIN < VDD, VDD = VDD (max) -2 2µA

IOZ Three-state output leakage current 0V < VO < VDD

VDD = VDD (max)

G = VDD (max)

-2 2µA

IOS2, 3 Short-circuit output current 0V < VO < VDD -90 90 mA

IDD(OP) Supply current operating

@ 1MHzInputs: VIL = 0.8V,

VIH = 2.0V

IOUT = 0mA

VDD = VDD (max)

125 mA

IDD1

(OP) Supply current operating

@40MHzInputs: VIL = 0.8V,

VIH = 2.0V

IOUT = 0mA

VDD = VDD (max)

180 mA

IDD2(SB) Nominal standby supply current

@0MHzInputs: VIL = VSS

IOUT = 0mA

E = VDD - 0.5

VDD = VDD (max)

VIH = VDD - 0.5V

-55°C and 25°C

-40oC and 25oC

+125°C

AC CHARACTERISTICS READ CYCLE (Pre/Post-Radiation)*

(-55°C to +125°C for (C) screening and -40oC to +125oC for (W) screening) (VDD = 3.3V + 0.3)

Notes: * Post-radiation performance guaranteed at 25°C per MIL-STD-883 Method 1019.

1. Functional test.

2. Three-state is defined as a 300mV change from steady-state output voltage (see Figure 3).

3. The ET (enable true) notation refers to the falling edge of E. SEU immunity does not affect the read parameters.

4. The EF (enable false) notation refers to the rising edge of E. SEU immunity does not affect the read parameters.

SYMBOL PARAMETER MIN MAX UNIT

tAVAV1Read cycle time 20 ns

tAVQV Read access time 25 ns

tAXQX Output hold time 3ns

tGLQX G-controlled Output Enable time 0ns

tGLQV G-controlled Output Enable time (Read Cycle 3) 10 ns

tGHQZ2G-controlled output three-state time 10 ns

tETQX3E-controlled Output Enable time 3ns

tETQV3E-controlled access time 25 ns

tEFQZ1,2,4E-controlled output three-state time 10 ns

{

{}

}

VLOAD + 300mV

VLOAD - 300mV

VLOAD

VH - 300mV

VL + 300mV

Active to High Z LevelsHigh Z to Active Levels

Figure 3. 3-Volt SRAM Loading

Assumptions:

1. E and G < VIL (max) and W > VIH (min)

A(18:0)

DQ(7:0)

Figure 4a. SRAM Read Cycle 1: Address Access

tAVAV

tAVQV

tAXQX

Previous Valid Data Valid Data

Assumptions:

1. G < VIL (max) and W > VIH (min)

A(18:0)

Figure 4b. SRAM Read Cycle 2: Chip Enable-Controlled Access

DATA VALID

tEFQZ

tETQX

tETQV

DQ(7:0)

Figure 4c. SRAM Read Cycle 3: Output Enable-Controlled Access

A(18:0)

DQ(7:0)

GtGHQZ

Assumptions:

1. E< VIL (max) and W > VIH (min)

tGLQV

tGLQX

tAVQV

DATA VALID

AC CHARACTERISTICS WRITE CYCLE (Pre/Post-Radiation)*

(-55°C to +125°C for (C) screening and -40oC to +125oC for (E) screening) (VDD = 3.3V + 0.3)

Notes:

* Post-radiation performance guaranteed at 25°C per MIL-STD-883 Method 1019.

1. Functional test performed with outputs disabled (G high).

2. Three-state is defined as 300mV change from steady-state output voltage (see Figure 3).

SYMBOL PARAMETER MIN MAX UNIT

tAVAV1Write cycle time 20 ns

tETWH Device Enable to end of write 20 ns

tAVET Address setup time for write (E - controlled) 0ns

tAVWL Address setup time for write (W - controlled) 0ns

tWLWH Write pulse width 20 ns

tWHAX Address hold time for write (W - controlled) 2ns

tEFAX Address hold time for Device Enable (E - controlled) 2ns

tWLQZ2W - controlled three-state time 10 ns

tWHQX W - controlled Output Enable time 5ns

tETEF Device Enable pulse width (E - controlled) 20 ns

tDVWH Data setup time 15 ns

tWHDX2Data hold time 2ns

tWLEF Device Enable controlled write pulse width 20 ns

tDVEF2Data setup time 15 ns

tEFDX Data hold time 2ns

tAVWH Address valid to end of write 20 ns

tWHWL1Write disable time 5ns

Assumptions:

1. G < VIL (max). If G > VIH (min) then Q(8:0) will be

in three-state for the entire cycle.

2. G high for tAVAV cycle.

tAVWL

Figure 5a. SRAM Write Cycle 1: Write Enable - Controlled Access

A(18:0)

Q(7:0)

tAVAV2

D(7:0) APPLIED DATA

tDVWH tWHDX

tETWH

tWLWH tWHAX

tWHQX

tWLQZ

tAVWH

tWHWL

tEFDX

Assumptions & Notes:

1. G < V IL (max). If G > V IH (min) then Q(7:0) will be in three-state for the entire cycle.

2. Either E scenario above can occur.

3. G high for tAVAV cycle.

A(18:0)

Figure 5b. SRAM Write Cycle 2: Chip Enable - Controlled Access

D(7:0) APPLIED DATA

Q(7:0) tWLQZ

tETEF

tWLEF

tDVEF

tAVAV3

tAVET

tETEF

tEFAX

Notes:

1. 50pF including scope probe and test socket capacitance.

2. Measurement of data output occurs at the low to high or high to low transition mid-point

(i.e., CMOS input = V DD/2).

90%

Figure 6. AC Test Loads and Input Waveforms

Input Pulses

10%

< 5ns < 5ns

VLOAD = 1.55V

300 ohms

50pF

CMOS

0.5V

VDD-0.05V

10%

DATA RETENTION CHARACTERISTICS (Pre/Post-Irradiation)

(1 Second Data Retention Test)

Notes:

1. E = VDD - .2V, all other inputs = VDR or VSS.

2. Data retention current (IDDR

) Tc = 25oC.

3. Not guaranteed or tested.

DATA RETENTION CHARACTERISTICS (Pre/Post-Irradiation)

(10 Second Data Retention Test, Tc= -55oC to +125oC for (C) screening

Notes:

1. Performed at VDD (min) and VDD (max).

2. E = VSS, all other inputs = VDR or VSS.

3. Not guaranteed or tested.

SYMBOL PARAMETER MINIMUM MAXIMUM UNIT

VDR VDD for data retention 2.0 -- V

IDDR 1,2 Data retention current -- 2.0mA

tEFR1,3Chip select to data retention time 0ns

tR1,3Operation recovery time tAVAV ns

SYMBOL PARAMETER MINIMUM MAXIMUM UNIT

VDD1VDD for data retention 3.0 3.6 V

tEFR2, 3 Chip select to data retention time 0ns

tR2, 3 Operation recovery time tAVAV ns

VDD

DATA RETENTION MODE

50%

50% VDR > 2.0V

Figure 7. Low VDD Data Retention Waveform

tEFR

PACKAGING

Figure 8. 36-pin Ceramic FLATPACK

1. All exposed metalized areas are gold plated over electroplated nickel per MIL-PRF-38535.

2. The lid is electrically connected to VSS.

3. Lead finishes are in accordance to MIL-PRF-38535.

4. Lead position and coplanarity are not measured.

5. ID mark is vendor option.

6. Total weight is approx. 3.42 grams

1. All package finishes are per MIL-PRF-38535.

2. Letter designations are for cross-reference to MIL-STD-1835.

3. All leads increase max. limit by 0.003 measured at the center of the flat, when lead finish A (solder) is applied.

4. Total weight is approx. 10.77 g.

5. X-rays are an ineffective test for shielded packages.

Figure 9. 36-lead flatpack shielded package

ORDERING INFORMATION

512K x 8 SRAM:

= 25ns access time, 3.3V operation

20 = 20ns access time, 3.3V operation

Package Type:

(I) = 36-lead flatpack shielded package (bottom brazed)

(U) = 36-lead flatpack package (bottom brazed)

Screening:

(P) = Prototype flow

(W) = Extended Industrial Temperature Range Flow (-40oC to +125oC)

Lead Finish:

(A) = Hot solder dipped

(X) = Factory option (gold or solder)

Notes:

1. Lead finish (A,C, or X) must be specified.

2. If an “X” is specified when ordering, then the part marking will match the lead finish and will be either “A” (solder) or “C” (gold).

3. Prototype flow per UTMC Manufacturing Flows Document. Tested at 25°C only. Lead finish is GOLD ONLY. Radiation neither

tested nor guaranteed.

4. Military Temperature Range flow per UTMC Manufacturing Flows Document. Devices are tested at -55 °C, room temp, and +125 °C.

Radiation neither tested nor guaranteed.

5. 36LBBFP Shielded Package for reduced high rel orders only.

6. Extended Industrial Temperature Range flow per UTMC Manufacturing Flows Document. Devices are tested at -40°C to +125°C.

Radiation neither tested nor guaranteed.

UT8Q512 - * * * *

-Aeroflex UTMC Core Part Number

512K x 8 SRAM: SMD

5962 -

Lead Finish:

(A) =Hot solder dipped

(X) =Factory Option (gold or solder)

Case Outline:

(X) =36-lead flatpack shielded package (bottom-brazed)

(U)=36-lead ceramic flatpack (bottom-brazed)

Class Designator:

(T) =QML Class T

(Q) =QML Class Q

Device Type

01 =25ns access time, 3.3V operation, Mil-Temp

02 =25ns access time, 3.3V operation, Extended Industrial Temp (-40oC to +125oC)

03 =20ns access time, 3.3V operation, Mil-Temp

04 =20ns access time, 3.3V operation, Extended Industrial Temp (-40oC to +125oC)

Drawing Number: 99607

Total Dose:

(D) =1E4 (10krad)(Si))

(P) =3E4 (30krad)(Si)) (contact factory)

(L) =5E4 (50krad(Si)) (contact factory)

Federal Stock Class Designator: No options

* * ***

Notes:

1.Lead finish (A,C, or X) must be specified.

2.If an “X” is specified when ordering, part marking will match the lead finish and will be either “A” (solder) or “C” (gold).

3.Total dose radiation must be specified when ordering.

99607