NPN SILICON TRANSISTOR, EPITAXIAL PLANAR *2N 1893 TRANSISTOR NPN SILICIUM, PLANAR EPITAXIAL 2 Preferred device Dispositif recommand - LF amplification (high voltage) Amplification BF (haute tension) - Switching Commutation VcEO 80 V ho7_(150 mA) 40 - 120 fy 50 MHz min i issipati Case TO-39 See outline drawing CB-7 on last pages paximum power dissipation Boitier Voir dessin cot CB-7 dernires pages Prot (Ww) 3 N CF I 1 N\ Bottom view I Re Vue de dessous J 1 N E ~ P| 0 I Tamb C) a) Weight : 1,19 Collector is connected to case 0 50 100160200 T. (C) (2) Masse Le collecteur est reli au boftier ABSOLUTE RATINGS (LIMITING VALUES) = +25 C (Unless otherwise stated) VALEURS LIMITES ABSOLUES D'UTILISATION Tamb (Sauf indications contraires) Collector-base voltage Veso 120 Vv Tension collecteur-base Collector-emitter voltage R <= 102 VceR 100 Vv Tension collecteur-metteur BE. Collector-emitter voltage Vceo 80 Vv Tension collecteur-metteur : Emitter-base voltage VeBo 7 Vv Tension 6metteur-base Tamb = 25C (1) 0,8 Power dissipation Prot w Dissipation de puissance = ry Tease 25C (2) 3 Junction temperature max T. 200 C Temprature de jonction J Storage temperature min T stg 65 C Temprature de stockage max +200 C 76-01 1/4 THOMSON-CSF DMSON SEMCONOUCTEURS 147 Sesweemn2N 1893 STATIC CHARACTERISTICS CARACTERISTIQUES STATIQUES Tamb = 25C (Unless otherwise stated) {Sautf indications contraires) Test conditions Conditions de mesure Min. Typ. Max. Vop =90V 10 nA ig =0 Collector-base cut-off current lcBo Courant rsiduel collecteur-bese Ves =90V Ig =0 15 BA Tamb = 150C Emitter-base cut-off current Veg =5V | Courant rsiduel metteur-base { c = oO EBO 10 nA Collector-base breakdown voltage ig =0 Vv Tension de claquage collecteur-base lo = 100 uA {(BRICBO 120 v Roe = 102 BE V, 2k Ig = 100 mA (BR)CER 100 Collector-emitter breakdown voltage Vv Tension de claquage collecteur-metteur 1 =0 * 1B soma | V(BRICEC! 80 =30m : { =0 Emitter-base breakdown voltage Cc Vv Tension de claquage snetteur-base ' = 100 uA {BR)EBO ? Vv Veg =10V CE h Ig = 100A 2iE 20 Veep = 10V CE te =10mA 38 Static forward current transfer ratio hoy e* Valeur statique du rapport de transfert Vv =10V direct du courant cE~ 40 120 lo = 150mA Vog = 10V Io =10mA hoe 20 ! oO Tamb = 55C ! =50mA c Ig = 5mA 12 Collector-emitter saturation voltage Voesat* Vv Tension de saturation collecreur-metteur Ic = 150 mA = 5 Ip ~15mA Io * 50 mA 09 . . ig ~5mA Base-emitter saturation voltage VeEsat* Vv Tension de saturation base-metteur _ Ip ~ 150 mA 13 1g ~15mA . * Pulsed tp #300us 8 2% impulsions 2/4 1482N 1893 DYNAMIC CHARACTERISTICS (for small signals) CARACTERISTIQUES DYNAMIQUES (pour petits signaux} (Unless otherwise stated} (Sauf indications contraires) Test conditions Conditions de mesure Min. Typ. Max. Vee =5V CE Io =1mA 30 100 Forward current transfer ratio f =1kHz h Repport de transfert direct du 21e Voge = 10V lo =5mA 45 f = 1 kHz Veg =5V lo =1mA 20 30 Input impedance = 1 kHz h impdence dentre 11b Q Vep =10V CB lo =5mA 4 8 f = 1kHz Veg =5V cB le =1mA 1,25 . f =1 kHz Reverse voltage transfer ratio hy 2b 104 Rapport de transfert inverse de la tension Veg = 10V lo =5mA 1,5 f =1 kHz Veg =5V le =imA 0,5 f = 1 kHz Output admittance 9b BS Admittance de sortie Veg =10V Ig =5mA 0,5 t =1 kHz Transition frequency Voce = to va fy 50 MHz Frquence de transition Cc f = 20 MHz Output capacitance Me =o . Coon 15 pF Capacit de sortie e =1MHz Input capacitance VEB - O V c Capacit d'entre c 11b 85 pF f = 1 MHz 3/4 1492N 1893 TYPICAL CHARACTERISTICS CARACTERISTIQUES TYPIQUES oh mA Ip =o mA 0 20 40 60 80 100 Veiv) hore 80 40 1 102 107 10 8 =OmA 10 Vog(v) 414 150