AP02N60I RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET 100% Avalanche Test D Fast Switching Simple Drive Requirement G BVDSS 600V RDS(ON) 8 ID 2A S Description The TO-220CFM package is widely preferred for all commercialindustrial applications. The device is suited for switch mode power supplies ,AC-DC converters and high current high speed switching circuits. GD S TO-220CFM(I) Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 600 V VGS Gate-Source Voltage 30 V ID@TC=25 Continuous Drain Current, VGS @ 10V 2 A ID@TC=100 Continuous Drain Current, VGS @ 10V 1.26 A 1 IDM Pulsed Drain Current 3.6 A PD@TC=25 Total Power Dissipation 22 W 0.176 W/ Linear Derating Factor 2 EAS Single Pulse Avalanche Energy 80 mJ IAR Avalanche Current 2 A EAR Repetitive Avalanche Energy 2 mJ TSTG Storage Temperature Range -55 to 150 TJ Operating Junction Temperature Range -55 to 150 Thermal Data Symbol Parameter Value Unit Rthj-c Maximum Thermal Resistance, Junction-case 5.7 /W Rthj-a Maximum Thermal Resistance, Junction-ambient 62 /W Data & specifications subject to change without notice 1 200806054 AP02N60I Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units 600 - - V BVDSS Drain-Source Breakdown Voltage BVDSS/Tj Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA - 0.6 - V/ RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=1A - - 8 VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 2 - 4 V gfs Forward Transconductance VDS=20V, ID=1A - 0.2 - S IDSS Drain-Source Leakage Current VDS=600V, VGS=0V - - 10 uA Drain-Source Leakage Current (Tj=150 C) VDS=480V, VGS=0V - - 100 uA Gate-Source Leakage VGS= 30V - - 100 nA ID=2A - 14 - nC VGS=0V, ID=1mA o IGSS 3 Qg Total Gate Charge Qgs Gate-Source Charge VDS=480V - 2 - nC Qgd Gate-Drain ("Miller") Charge VGS=10V - 8.5 - nC VDS=300V - 9.5 - ns 3 td(on) Turn-on Delay Time tr Rise Time ID=2A - 12 - ns td(off) Turn-off Delay Time RG=10,VGS=10V - 21 - ns tf Fall Time RD=150 - 9 - ns Ciss Input Capacitance VGS=0V - 155 - pF Coss Output Capacitance VDS=25V - 27 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 14 - pF Min. Typ. - - 2 A - - 3.6 A - - 1.5 V Source-Drain Diode Symbol IS ISM VSD Parameter Test Conditions VD=VG=0V , VS=1.5V Continuous Source Current ( Body Diode ) Pulsed Source Current ( Body Diode ) 1 3 Forward On Voltage Tj=25, IS=2A, VGS=0V Max. Units Notes: 1.Pulse width limited by Max. junction temperature. 2.Starting Tj=25oC , VDD=50V , L=40mH , RG=25 , IAS=2A. 3.Pulse test THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP02N60I 1.5 T C =25 o C 10V 6.0V T C =150 o C 0.8 10V 6.0V 5.5V ID , Drain Current (A) ID , Drain Current (A) 5.5V 1 5.0V 0.5 0.6 5.0V 0.4 V GS =4.5V 0.2 V GS =4.5V 0 0 0 5 10 15 0 20 5 10 15 20 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 2.8 1.2 I D =1A V GS =10V 2.4 1.1 Normalized R DS(ON) Normalized BVDSS (V) 2 1 1.6 1.2 0.8 0.9 0.4 0 0.8 -50 0 50 100 150 T j , Junction Temperature ( o C) Fig 3. Normalized BV DSS v.s. Junction Temperature -50 0 50 100 150 o T j , Junction Temperature ( C ) Fig 4. Normalized On-Resistance v.s. Junction Temperature 3 AP02N60I 2.4 30 20 1.6 PD (W) ID , Drain Current (A) 2 1.2 10 0.8 0.4 0 0 25 50 75 100 125 0 150 50 o 100 150 o Tc , Case Temperature ( C ) Tc , Case Temperature ( C ) Fig 5. Maximum Drain Current v.s. Fig 6. Typical Power Dissipation Case Temperature 10 1 Normalized Thermal Response (R thjc) Duty Factor = 0.5 100us 1 ID (A) 1ms 10ms 100ms 0.1 T C =25 o C Single Pulse 0.01 0.2 0.1 0.1 0.05 PDM 0.02 t 0.01 T Single Pulse Duty Factor = t/T Peak Tj = P DM x Rthjc + TC 0.01 1 10 100 1000 10000 V DS (V) Fig 7. Maximum Safe Operating Area 0.00001 0.0001 0.001 0.01 0.1 1 10 t , Pulse Width (s) Fig 8. Effective Transient Thermal Impedance 4 AP02N60I f=1.0MHz 200 16 160 Ciss I D =2A 12 V DS =320V V DS =400V 10 C (pF) VGS , Gate to Source Voltage (V) 14 V DS =480V 8 120 80 6 4 40 Coss Crss 2 0 0 0 2 4 6 8 10 12 14 16 18 1 20 5 9 13 17 21 25 29 V DS (V) Q G , Total Gate Charge (nC) Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics 100 5 4 10 T j = 150 o C VGS(th) (V) IS (A) 3 T j = 25 o C 2 1 1 0.1 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 V SD (V) Fig 11. Forward Characteristic of Reverse Diode -50 0 50 100 150 o T j , Junction Temperature ( C ) Fig 12. Gate Threshold Voltage v.s. Junction Temperature 5 AP02N60I VDS 90% RD VDS D 0.5x RATED VDS G RG TO THE OSCILLOSCOPE 10% + S 10 V VGS VGS - td(on) Fig 13. Switching Time Circuit td(off) tf tr Fig 14. Switching Time Waveform VG VDS 10V 0.8 x RATED VDS G S QG TO THE OSCILLOSCOPE D QGS QGD VGS + 1~ 3 mA IG ID Charge Fig 15. Gate Charge Circuit Q Fig 16. Gate Charge Waveform 6 ADVANCED POWER ELECTRONICS CORP. Package Outline : TO-220CFM E A Millimeters SYMBOLS c2 L4 MIN NOM MAX A 4.30 4.70 4.90 A1 2.30 2.65 3.00 b b1 c c2 0.50 0.70 0.90 0.95 1.20 1.50 0.45 0.65 0.80 2.30 2.60 2.90 E 9.70 10.00 10.40 L 12.50 13.00 13.50 L3 2.91 3.41 3.91 L4 14.70 15.40 16.10 e ---- 3.20 ---- ---- 2.54 ---- L3 A1 b1 1.All Dimensions Are in Millimeters. 2.Dimension Does Not Include Mold Protrusions. L b c e Part Marking Information & Packing : TO-220CFM Part Number LOGO 20N60I Package Code YWWSSS Date Code (YWWSSS) YLast Digit Of The Year WWWeek SSSSequence 7