Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
100% Avalanche Test BVDSS 600V
Fast Switching RDS(ON) 8Ω
Simple Drive Requirement ID2A
Description
Absolute Maximum Ratings
Symbol Units
VDS Drain-Source Voltage V
VGS Gate-Source Voltage V
ID@TC=25Continuous Drain Current, VGS @ 10V A
ID@TC=100Continuous Drain Current, VGS @ 10V A
IDM Pulsed Drain Current1A
PD@TC=25Total Power Dissipation W
W/
EAS Single Pulse Avalanche Energy2mJ
IAR Avalanche Current A
EAR Repetitive Avalanche Energy mJ
TSTG
TJOperating Junction Temperature Range
Thermal Data
Symbol Value Unit
Rthj-c Maximum Thermal Resistance, Junction-case 5.7 /W
Rthj-a Maximum Thermal Resistance, Junction-ambient 62 /W
Data & specifications subject to change without notice 1
200806054
RoHS-compliant Product
Storage Temperature Range -55 to 150
3.6
22
Linear Derating Factor 0.176
2
1.26
Parameter Rating
600
AP02N60I
80
-55 to 150
Parameter
2
2
± 30
GDSTO-220CFM(I)
The TO-220CFM package is widely preferred for all commercial-
industrial applications. The device is suited for switch mode power
supplies ,AC-DC converters and high current high speed switching
circuits.
G
D
S
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=1mA 600 - - V
ΔBVDSS/ΔTjBreakdown Voltage Temperature Coefficient Reference to 25, ID=1mA - 0.6 - V/
RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=1A - - 8 Ω
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 2 - 4 V
gfs Forward Transconductance VDS=20V, ID=1A - 0.2 - S
IDSS Drain-Source Leakage Current VDS=600V, VGS=0V - - 10 uA
Drain-Source Leakage Current (Tj=150oC) VDS=480V, VGS=0V - - 100 uA
IGSS Gate-Source Leakage VGS=--
nA
QgTotal Gate Charge3ID=2A - 14 - nC
Qgs Gate-Source Charge VDS=480V - 2 - nC
Qgd Gate-Drain ("Miller") Charge VGS=10V - 8.5 - nC
td(on) Turn-on Delay Time3VDS=300V - 9.5 - ns
trRise Time ID=2A - 12 - ns
td(off) Turn-off Delay Time RG=10Ω,VGS=10V - 21 - ns
tfFall Time RD=150Ω-9-
ns
Ciss Input Capacitance VGS=0V - 155 - pF
Coss Output Capacitance VDS=25V - 27 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 14 - pF
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
ISContinuous Source Current ( Body Diode ) VD=VG=0V , VS=1.5V - - 2 A
ISM Pulsed Source Current ( Body Diode )1- - 3.6 A
VSD Forward On Voltage3Tj=25, IS=2A, VGS=0V - - 1.5 V
Notes:
1.Pulse width limited by Max. junction temperature.
2.Starting Tj=25oC , VDD=50V , L=40mH , RG=25Ω , IAS=2A.
3.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP02N60I
± 30V ±100
AP02N60I
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
Fig 3. Normalized BVDSS v.s. Junction Fig 4. Normalized On-Resistance
Temperature v.s. Junction Temperature
3
0.8
0.9
1
1.1
1.2
-50 0 50 100 150
Tj , Junction Temperature ( oC)
Normal ized BV DSS (V)
0
0.4
0.8
1.2
1.6
2
2.4
2.8
-50 0 50 100 150
Tj , Junction Temperature ( oC )
Normal ized RDS(ON)
VGS=10V
I
D=1A
0
0.5
1
1.5
0 5 10 15 20
VDS , Drain-to-Source Voltage (V)
ID , Drain Curre nt (A)
TC=25oC 10V
5.5V
6.0V
5.0V
VGS=4.5V
0
0.2
0.4
0.6
0.8
0 5 10 15 20
VDS , Drain-to-Source Voltage (V)
ID , Drain Curre nt (A)
TC=150 oC 10V
5.5V
6.0V
5.0V
VGS=4.5V
AP02N60I
Fig 5. Maximum Drain Current v.s. Fig 6. Typical Power Dissipation
Case Temperature
Fig 7. Maximum Safe Operating Area
4
Fig 8. Effective Transient Thermal Impedance
0
10
20
30
0 50 100 150
Tc , Case Temperature ( o
C )
PD (W)
0
0.4
0.8
1.2
1.6
2
2.4
25 50 75 100 125 150
Tc , Case Temperature ( o
C )
ID , Drain Curre nt (A)
0.01
0.1
1
10
1 10 100 1000 10000
VDS (V)
ID (A)
TC=25oC
Single Pulse
100us
1ms
10ms
100ms
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
t , Pulse Width (s)
Normalized Thermal Response (Rthjc)
PDM
Duty Factor = t/T
Peak Tj = PDM x Rthjc + TC
t
T
0.02
0.01
0.05
0.1
0.2
Duty Factor = 0.5
Single Pulse
AP02N60I
Fig 9. Gate Charge Characteristics
Fig 11. Forward Characteristic of Fig 12. Gate Threshold Voltage v.s.
Reverse Diode Junction Temperature
5
Fig 10. Typical Capacitance Characteristics
0
1
2
3
4
5
-50 0 50 100 150
Tj , Junction Temperature ( o C )
VGS(th) (V)
0.1
1
10
100
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
VSD (V)
IS (A)
Tj = 150 oCT
j = 25 oC
0
2
4
6
8
10
12
14
16
0 2 4 6 8 10 12 14 16 18 20
QG , Total Gate Charge (nC)
VGS , Gate to Source Voltage (V)
ID=2A VDS =320V
VDS =400V
VDS =480V
0
40
80
120
160
200
1 5 9 1317212529
VDS (V)
C (pF)
f
=1.0MHz
Ciss
Coss
Crss
AP02N60I
Fig 13. Switching Time Circuit Fig 14. Switching Time Waveform
Fig 15. Gate Charge Circuit Fig 16. Gate Charge Waveform
6
td(on) trtd(off) tf
VDS
VGS
10%
90%
Q
VG
10V
QGS QGD
QG
Charge
0.5x RATED VDS
TO THE
OSCILLOSCOPE
-
+10 V
D
G
S
VDS
VGS
RG
RD
0.8 x RATED VDS
TO THE
OSCILLOSCOPE
-
+
D
G
S
VDS
VGS
ID
IG
1~ 3 m
A
Package Outline : TO-220CFM
Millimeters
MIN NOM MAX
A4.30 4.70 4.90
A1 2.30 2.65 3.00
b0.50 0.70 0.90
b1 0.95 1.20 1.50
c0.45 0.65 0.80
c2 2.30 2.60 2.90
E9.70 10.00 10.40
L12.50 13.00 13.50
L3 2.91 3.41 3.91
L4 14.70 15.40 16.10
φ---- 3.20 ----
e---- 2.54 ----
1.All Dimensions Are in Millimeters.
2.Dimension Does Not Include Mold Protrusions.
Part Marking Information & Packing : TO-220CFM
SYMBOLS
ADVANCED POWER ELECTRONICS CORP.
20N60I
Part Numbe
r
LOGO
Date Code (YWWSSS)
YLast Digit Of The Year
WWWeek
SSSSequence
YWWSSS
Package Code
LOGO
A1
A
c
E
φ
b
b1
e
L4
c2
A1
A
c
E
φ
b
b1
e
L4
c2
L3
L
7