LESHAN RADIO COMPANY, LTD.
M18–1/4
1
3
2
MMBT5088LT1
MMBT5089LT1
CASE 318-08, STYLE 6
SOT-23 (TO-236AB)
MAXIMUM RATINGS
Rating Symbol 5088LT 15089LT1 Unit
Collector–Emitter V oltage V CEO 30 25 Vdc
Collector–Base Voltage V CBO 35 30 Vdc
Emitter–Base V oltage V EBO 4.5 Vdc
C
ollector Current — Continuous
I C 50 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR- 5 Board (1) P D225 mW
T A =25 °C
Derate above 25 °C 1.8 mW/ °C
Thermal Resistance, Junction to Ambient R θJA 556 °C/W
Total Device Dissipation P D300 mW
Alumina Substrate,(2) TA=25°C
Derate above 25°C 2.4 mW/ °C
Thermal Resistance,Junction to Ambient R θJA 417 °C/W
Junction and Storage Temperature T J , T stg
–55 to + 150
°C
DEVICE MARKING
MMBT5088LT1 = 1Q; MMBT5089L T1 = 1R
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage V (BR)CEO Vdc
(I C = 1.0 mAdc, I B = 0) MMBT5088 30 —
MMBT5089 25 —
Collector–Base Breakdown Voltage V(BR)CBO Vdc
(I C = 100 µAdc, I E = 0) MMBT5088 35 —
MMBT5089 30 —
Collector Cutoff Current I CBO nAdc
(V CB = 20 Vdc, I E = 0 ) MMBT5088 — 5 0
(V CB = 15 Vdc, I E = 0 ) MMBT5089 — 5 0
Emitter Cutoff Current I EBO nAdc
(VEB(off)= 3.0Vdc, I C = 0 ) MMBT5088 — 50
(VEB(off) = 4.5Vdc, I C = 0 ) MMBT5089 — 1 0 0
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Low Noise Transistors
NPN Silicon
2
EMITTER
1
BASE
COLLECTOR
3
LESHAN RADIO COMPANY, LTD.
M18–2/4
MMBT5088LT1 PNP MMBT5089LT1
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS
DC Current Gain hFE —
(IC=100µAdc,VCE=5.0Vdc) MMBT5088 300 900
MMBT5089 400 1200
(IC=1.0mAdc,V CE=5.0Vdc) MMBT5088 350 —
MMBT5089 450 —
(IC = 10mAdc, VCE=5.0Vdc) MMBT5088 300 —
MMBT5089 400 —
Collector–Emitter Saturation Voltage VCE(sat) Vdc
(IC=10mAdc,IB=1.0mAdc) — 0.5
Base–Emitter Saturation Voltage VBE(sat) Vdc
(IC =10mAdc,IB=1.0mAdc) — 0.8
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product f TMHz
(IC= 500 µAdc,VCE=5.0Vdc,f=20MHz) 50 —
Collector–Base Capacitance C cb pF
(VCB=5.0Vdc,IE=0,f=1.0MHz emitter guarded) — 4.0
Emitter–Base Capacitance C eb pF
(VEB=0.5Vdc,IC=0,f=1.0MHz collector guarded) — 10
Small Signal Current Gain h fe —
(IC=1.0mAdc,VCE=5.0Vdc,f=1.0kHz) MMBT5088 350 1400
MMBT5089 450 1800
Noise Figure N F dB
(IC=100µAdc,VCE=5.0Vdc, R S=10κΩ,f=1.0kHz) MMBT5088 — 3.0
MMBT5089 — 2.0
IDEAL
TRANSISTOR
R Sin
en
Figure 1.Transistor Noise Model
~
LESHAN RADIO COMPANY, LTD.
M18–3/4
MMBT5088LT1 MMBT5089LT1
NOISE CHARACTERISTICS
(V CE = 5.0 Vdc, T A = 25°C)
NOISE VOLTAGE
f, FREQUENCY (Hz)
Figure 2. Effects of Frequency
I C , COLLECTOR CURRENT (mA)
Figure 3. Effects of Collector Current
f, FREQUENCY (Hz)
Figure 4. Noise Current
R S , SOURCE RESIST ANCE (OHMS)
Figure 5. Wideband Noise Figure
100 Hz NOISE DATA
R S , SOURCE RESIST ANCE (OHMS)
Figure 6. Total Noise Voltage
R S , SOURCE RESIST ANCE (OHMS)
Figure 7. Noise Figure
BANDWIDTH=1.0Hz
e n , NOISE VOLTAGE (nV)
I n , NOISE CURRENT (pA)
V T , TO TAL NOISE VOLTAGE (nV)
e n , NOISE VOLTAGE (nV)
NF, NOISE FIGURE (dB)
NF, NOISE FIGURE (dB)
I
C
= 10 mA
300µA
R
S
~
0
3.0mA
1.0mA
~
R
S
~
0
~
f = 10Hz
100Hz
10kHz 1.0kHz
100kHz
I
C
=10mA
3.0mA
1.0mA
300µA
100µA
10µA
BANDWIDTH=1.0Hz
BANDWIDTH=10 Hz to15.7 kHz
I
C
=1.0 mA
500µA
100µA
10µA
I
C
=10mA
I
C
= 10mA
3.0mA
1.0mA
300µA
100µA
30µA
10µA
300µA
100µA
30µA
3.0mA
1.0mA
10µA
BANDWIDTH=1.0Hz
30µA
R
S
~
0
~
BANDWIDTH=1.0Hz
BANDWIDTH=1.0Hz
30
20
10
7.0
5.0
3.0 10 20 50 100 200 5001.0k 2.0k 5.0k10k 20k 50k100k
30
20
10
7.0
5.0
3.0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10
20
16
12
8.0
4.0
010 20 50 100 200 500 1k 2k 5k 10k 20k 50k 100k
10
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1 10 20 50 100 200 5001.0k 2.0k 5.0k10k 20k 50k100k
10 20 50 100 200 5001.0k 2.0k 5.0k10k 20k 50k100k 10 20 50 100 200 500 1.0k 2.0k 5.0k 10k 20k 50k 100k
300
200
100
70
50
30
20
10
7.0
5.0
3.0
20
16
12
8.0
4.0
0
LESHAN RADIO COMPANY, LTD.
M18–4/4
MMBT5088LT1 MMBT5089LT1
V
CE
=5.0 V
I C , COLLECTOR CURRENT (mA)
Figure 8. DC Current Gain
h FE, DC CURRENT GAIN (NORMALIZED)
V, VOLTAGE (VOLTS)
R θVBE , BASE– EMITTER
TEMPERATURE COEFFICIENT (mV/ °C)
f T , CURRENT– GAIN — BANDWIDTH
PRODUCT (MHz)
C, CAP ACIT ANCE (pF)
I C , COLLECTOR CURRENT (mA)
Figure 9. “On” Voltages I C , COLLECTOR CURRENT (mA)
Figure 10. Temperature Coefficients
V R , REVERSE VOLT AGE (VOLTS)
Figure 11. Capacitance
I C , COLLECTOR CURRENT (mA)
Figure 12. Current–Gain — Bandwidth Product
T
A
=125°C
25°C
–55°C
T
J
=25°C
V
CE(sat)
@ I
C
/I
B
=10
V
BE
@ V
CE
= 5.0V
T
J
=25°C to 125°C
–55°C to25°C
T
J
= 25°C
C
cb
C
ob
C
eb
C
ib
V
CE
= 5.0 V
T
J
= 25°C
4.0
3.0
2.0
1.0
0.7
0.5
0.4
0.3
0.20.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10
1.0
0.8
0.6
0.4
0.2
00.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100
–0.4
–0.8
–1.2
–1.6
–2.0
–0.40.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100
0.8
0.6
0.4
0.3
0.2
1.0
0.80.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100
500
300
200
100
70
50 1.0 2.0 5.0 10 20 50 100
