DATA SH EET
Product specification
Supersedes data of September 1994
File under Discrete Semiconductors, SC04
1997 Apr 11
DISCRETE SEMICONDUCTORS
2N1613
NPN medium power transistor
b
ook, halfpage
M3D111
1997 Apr 11 2
Philips Semiconductors Product specification
NPN medium power transistor 2N1613
FEATURES
Low current (max. 500 mA)
Low voltage (max. 50 V).
APPLICATIONS
High-speed switching and amplification.
DESCRIPTION
NPN medium power transistor in a TO-39 metal package.
PINNING
PIN DESCRIPTION
1 emitter
2 base
3 collector, connected to case
Fig.1 Simplified outline (TO-39) and symbol.
handbook, halfpage
3
1
2
MAM317
12
3
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter 75 V
VCEO collector-emitter voltage open base 50 V
ICM peak collector current 1A
P
tot total power dissipation Tamb 25 °C0.8 W
hFE DC current gain IC= 150 mA; VCE = 10 V 40 120
fTtransition frequency IC= 50 mA; VCE = 10 V; f = 100 MHz 60 MHz
1997 Apr 11 3
Philips Semiconductors Product specification
NPN medium power transistor 2N1613
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
Note
1. Refer to TO-39 standard mounting conditions.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter 75 V
VCEO collector-emitter voltage open base 50 V
VEBO emitter-base voltage open collector 7V
I
Ccollector current (DC) 500 mA
ICM peak collector current 1A
I
BM peak base current 200 mA
Ptot total power dissipation Tamb 25 °C0.8 W
Tcase = 100 °C1.7 W
Tcase 25 °C3W
T
stg storage temperature 65 +150 °C
Tjjunction temperature 200 °C
Tamb operating ambient temperature 65 +150 °C
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-a thermal resistance from junction to ambient note 1 218 K/W
Rth j-c thermal resistance from junction to case 58.3 K/W
1997 Apr 11 4
Philips Semiconductors Product specification
NPN medium power transistor 2N1613
CHARACTERISTICS
Tamb =25°C unless otherwise specified.
Note
1. Pulse test: tp300 µs; δ≤0.02.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
ICBO collector cut-off current IE= 0; VCB =60V 10 nA
IE= 0; VCB =60V; T
amb = 150 °C10 µA
IEBO emitter cut-off current IC= 0; VEB =5V 10 nA
hFE DC current gain IC= 0.1 mA; VCE =10V 20
I
C= 10 mA; VCE = 10 V; note 1 35
IC= 10 mA; VCE = 10 V; Tamb =55 °C20
I
C
= 150 mA; VCE = 10 V; note 1 40 120
IC= 500 mA; VCE = 10 V; note 1 20
VCEsat collector-emitter saturation voltage IC= 150 mA; IB=15mA 1.5 V
VBEsat base-emitter saturation voltage IC= 150 mA; IB=15mA 1.3 V
Cccollector capacitance IE=i
e= 0; VCB =10V 25 pF
Ceemitter capacitance IC=i
c= 0; VEB = 0.5 V 80 pF
fTtransition frequency IC= 50 mA; VCE = 10 V; f = 100 MHz 60 MHz
1997 Apr 11 5
Philips Semiconductors Product specification
NPN medium power transistor 2N1613
PACKAGE OUTLINE
UNIT a b D D1jkLw
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
mm 6.60
6.35 0.48
0.41 9.39
9.08 8.33
8.18 0.85
0.75 0.95
0.75 14.2
12.7
α
0.2 45°
DIMENSIONS (mm are the original dimensions)
SOT5/11 TO-39 97-04-11
k
j
DA L
seating plane
b
D1
0 5 10 mm
scale
A
5.08
Metal-can cylindrical single-ended package; 3 leads SOT5/11
A
wA
M M BM
α
B
a
1
2
3
1997 Apr 11 6
Philips Semiconductors Product specification
NPN medium power transistor 2N1613
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data Sheet Status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
1997 Apr 11 7
Philips Semiconductors Product specification
NPN medium power transistor 2N1613
NOTES
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Printed in The Netherlands 117047/00/02/pp8 Date of release: 1997 Apr 11 Document order number: 9397 750 01887