MITSUBISHI Nch POWER MOSFET FS14SM-18A HIGH-SPEED SWITCHING USE FS14SM-18A OUTLINE DRAWING Dimensions in mm 4.5 15.9MAX. 1.5 5.0 r 4 2 20.0 3.2 2 19.5MIN. 4.4 1.0 q w 5.45 e 5.45 0.6 2.8 4 wr q GATE w DRAIN e SOURCE r DRAIN q VDSS ................................................................................ 900V rDS (ON) (MAX) .............................................................. 0.85 ID ......................................................................................... 14A e TO-3P APPLICATION SMPS, DC-DC Converter, battery charger, power supply of printer, copier, HDD, FDD, TV, VCR, personal computer etc. MAXIMUM RATINGS Symbol VDSS VGSS ID IDM PD Tch Tstg -- (Tc = 25C) Parameter Conditions Drain-source voltage VGS = 0V Gate-source voltage Drain current Drain current (Pulsed) Maximum power dissipation Channel temperature VDS = 0V Storage temperature Weight Typical value Ratings Unit 900 30 V V 14 42 275 A A W -55 ~ +150 -55 ~ +150 4.8 C C g Feb.1999 MITSUBISHI Nch POWER MOSFET FS14SM-18A HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS (Tch = 25C) Symbol Parameter V (BR) DSS Drain-source breakdown voltage Gate-source breakdown voltage Gate-source leakage current Drain-source leakage current ID = 1mA, VGS = 0V IGS = 100A, VDS = 0V VGS = 25V, VDS = 0V VDS = 900V, VGS = 0V Gate-source threshold voltage Drain-source on-state resistance ID = 1mA, VDS = 10V ID = 7A, VGS = 10V ID = 7A, VGS = 10V ID = 7A, VDS = 10V V (BR) GSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs Ciss Drain-source on-state voltage Forward transfer admittance Input capacitance Coss Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Crss td (on) tr td (off) tf VSD Rth (ch-c) Limits Test conditions VDS = 25V, VGS = 0V, f = 1MHz VDD = 200V, ID = 7A, VGS = 10V, RGEN = RGS = 50 Turn-off delay time Fall time Source-drain voltage IS = 7A, VGS = 0V Channel to case Thermal resistance Unit Min. Typ. Max. 900 30 -- -- -- -- -- -- 10 V V A -- 2 -- -- -- 3 0.63 4.41 1 4 0.85 5.95 mA V V 9.0 -- -- -- 15.0 2900 290 50 -- -- -- -- S pF pF pF -- -- -- -- 45 65 325 100 -- -- -- -- ns ns ns ns -- 1.0 1.5 V -- -- 0.45 C/W PERFORMANCE CURVES DRAIN CURRENT ID (A) 250 200 150 100 50 0 0 50 100 150 102 7 5 3 2 100ms 101 7 5 3 2 1ms 100 7 5 3 2 10-1 200 tw = 10ms 10ms TC = 25C Single Pulse 100ms DC 3 5 7 101 2 3 5 7 102 2 3 5 7 103 2 3 CASE TEMPERATURE TC (C) DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) 50 DRAIN CURRENT ID (A) MAXIMUM SAFE OPERATING AREA 20 TC = 25C Pulse Test DRAIN CURRENT ID (A) POWER DISSIPATION PD (W) POWER DISSIPATION DERATING CURVE 300 40 VGS = 20V 10V 30 20 5V 10 PD = 275W VGS = 20V 10V TC = 25C Pulse Test 5V 16 PD = 275W 12 8 4.5V 4 4V 4V 0 0 10 20 30 40 50 DRAIN-SOURCE VOLTAGE VDS (V) 0 0 4 8 12 16 20 DRAIN-SOURCE VOLTAGE VDS (V) Feb.1999 MITSUBISHI Nch POWER MOSFET FS14SM-18A HIGH-SPEED SWITCHING USE ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) ID = 30A 30 20 14A 10 7A 0 4 8 12 16 0.8 0.6 0.4 0.2 TRANSFER CHARACTERISTICS (TYPICAL) FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) 2 FORWARD TRANSFER ADMITTANCE yfs (S) 101 30 20 10 4 8 12 16 VDS = 10V Pulse Test 7 5 3 2 75C 100 7 5 3 2 10-1 20 TC = 25C 125C 2 3 5 7 100 2 3 5 7 101 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) SWITCHING CHARACTERISTICS (TYPICAL) 104 7 5 3 2 102 7 5 Ciss 103 7 5 3 2 Coss 102 7 5 3 Tch = 25C 2 f = 1MHZ 101 20V 0 10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 20 TC = 25C VDS = 50V Pulse Test 0 VGS = 10V DRAIN CURRENT ID (A) 40 0 TC = 25C Pulse Test GATE-SOURCE VOLTAGE VGS (V) 50 DRAIN CURRENT ID (A) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) () 40 0 CAPACITANCE Ciss, Coss, Crss (pF) 1.0 TC = 25C Pulse Test Crss VGS = 0V 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN-SOURCE VOLTAGE VDS (V) SWITCHING TIME (ns) DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) 50 ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) td(off) 3 2 tf 101 7 5 tr td(on) 3 Tch = 25C VDD = 200V VGS = 10V RGEN = RGS = 50 2 100 0 10 2 3 5 7 101 2 3 5 7 102 DRAIN CURRENT ID (A) Feb.1999 MITSUBISHI Nch POWER MOSFET FS14SM-18A HIGH-SPEED SWITCHING USE 20 SOURCE CURRENT IS (A) 12 VDS = 250V 400V 8 600V 4 0 40 80 120 160 75C 16 25C 8 0 0.8 1.6 2.4 3.2 4.0 SOURCE-DRAIN VOLTAGE VSD (V) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 5.0 VGS = 10V ID = 1/2ID Pulse Test 3 2 100 7 5 3 2 -50 0 50 100 3.0 2.0 1.0 0 150 BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4 VGS = 0V ID = 1mA 1.2 1.0 0.8 0.6 -50 0 50 100 150 CHANNEL TEMPERATURE Tch (C) VDS = 10V ID = 1mA 4.0 CHANNEL TEMPERATURE Tch (C) 0.4 TC = 125C 24 GATE CHARGE Qg (nC) 101 7 5 10-1 VGS = 0V Pulse Test 32 0 200 GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (tC) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (tC) 40 Tch = 25C ID = 14A 16 0 DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25C) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) -50 0 50 100 150 CHANNEL TEMPERATURE Tch (C) TRANSIENT THERMAL IMPEDANCE Zth (ch-c) (C/W) GATE-SOURCE VOLTAGE VGS (V) GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 101 7 5 3 2 100 7 5 3 2 10-1 7 5 3 2 D = 1.0 0.5 0.2 0.1 0.05 0.02 0.01 Single Pulse 10-2 -4 10 2 3 5710-3 2 3 5710-22 3 5710-12 3 57100 2 3 57101 2 3 57102 PULSE WIDTH tw (s) Feb.1999