> SILICON POWER TRANSISTORS ome E COMPLEMENTARY 1 AMPERE 8 GET T rtsec Veeco 'c hee hre Package NPN PNP) Max Min. Cont. @2V, 100mA @ 2V, 1A COMMENTS Package Qutline . (Vv) (A) - . yp No. (Ww) Min. Max. Min. D4001 30 50 150 198 30 50 150 198 30 360 198 30 360 198 30 198 TYPICAL APPLICATIONS 45 wes . 198 Amplifier Output and Driver _45 Stages 198 Regulators series, shunt and 45 switching 198 Inverters/Converters 45 198 FEATURES 60 High Free Air Dissipation (1.25 198 Watts @ 25C} 60 1 Low Collector Saturation 98 60 Voltage (0.5V Typ. @ 1.0A) 198 Excellent Linearity 60 Fast Switching 198 @ T0-5 Compatible D40D10 75 Typical ft, 150 MHz 198 D41D10 ~75 198 D40D11 75 198 D41D11 75 198 D40013 75 198 D41D13 75 198 D40D14 75 198 D41D14 ~75 198 aN oO E 198 COMPLEMENTARY 2 AMPERES B Pt h = 9non OV t FE hee . GE Type Tce=25C YCEO Cc @ 2V, 100Ma @2V, 1A Package Outline NPN PNP Max. Min. Cont. Type No. (w) (A) Min. | Max. Min. | Max. BROWN Power Tab BLACK Power Tab BR Power Tab BLACK Powers Tab OWN Power Tab D40E1 50 = 50 50 50 50 50 Power Tab 115Silicon Power Tab Transistors COLOR MOLDED P= Tr D40D The General Electric D40D is a brown, silicone plastic encapsulated, power transistor designed for various specific and general purpose applications, such as: output and driver stages of O amplifiers operating at frequencies from DC to greater than 1.0 MHz; series, shunt and switching regulators; low and high frequency inverters/converters; and many others. FEATURING: High free-air power dissipation @ NPN complement to D41D PNP @ Brown for NPN, black for PNP @ Low collector saturation voltage (0.5V typ. @ 1.0A Ig) Z @ Excellent linearity EY. @ Fast switching B @ Hard solder mount down c Brown Leads Can Be Formed absolute maximum ratings: (25C) (unless otherwise specified) To A T0-5 Pin Configuration D40010 D40D1! D40D11 D40D2 04004 D40D7 D40D13 D40D3 D40D5 D40D8 D400 14 Voltages Collector to Emitter VCEO 30 45 60 75 Volts Emitter to Base VEBO 5 5 5 5 Volts Collector to Emitter VcCES 45 60 75 90 Volts Current? Collector (Continuous) I, 1 _ Amps Collector (Peak) . 1.5 Amps Power Dissipation? Tab at 25C Py 6.25 Watts Tab at 70C 4 Watts Free Air at 25C With Tab ____- 1.67 ___ Watts Without Tab _ 1.25 Watts Free Air at 50C With Tab 1.33 ~~ Watts Without Tab 1.0 Watts Thermal Resistance* Junction to Case Rojc 20 ~ C/W Junction to Ambient RgJa 5 With Tab 75 c/w Without Tab 100 C/W Temperature* Operating Ty -. -55 to +150 C Storage TstG <__ -55 to +150 ___ C Lead Soldering, TL +260 C 1/16 + 1/32 from case for 10 sec max NOTES: 'The last digit is a part number which designates a voltage grade and an hy-g level, Tab and lead forming is specified by a letter after this digit. 2 Please refer to the safe region of operation curves for more information, 3Tab temperature is measured on center of tab, 1/16 from plastic body. . . . oO, D40D1 electrical characteristics: (25C) saopa 04005 (unless otherwise specified) ODO D40D11 D40D13! D402 bD40D3 p40p14 Min. Max. Min. Max. Min. Max. Min. Max. Forward Current Transfer Ratio (VcE = 2 V, I, = 100 mA) herr 50 150 120 360 290 _ 120 360 (VcE =2 V,Ig=1 A) here 10 ~ 20 - 10 - 10 - Min. Typ. Max. Collector to Emitter Voltage (i, = 10 mA) D40D1, 2, 3 VCEO 30 ~ Volts D40D4, 5 VCEO 45 ~- - Volts D40D7, 8 VCEO 60 ~ _ Volts D40D10, 11,13, 14 VcEO 75 - - Volts Collector Saturation Voltage (I, = 500 mA, Ip = 50 mA) . D40D1, 2,4, 5 VCE(SAT) - - 0.5 Volts D40D7, 8, 10, 11, 13, 14 VCE(SAT) _ _ 1.0 Volts Base Saturation Voltage (I, = 500 mA, Ip = 50 mA) VBE(SAT) - _ 1.5 Volts t hre @ 1A. not specified for D40D13. 2 hee @ 1A. not specified for D40D14. 1105D40D Collector Cutoff Current (VcE = Rated \CEs) (Vcg = Rated Vcgg, Ty = 150C) (VcE = Rated VcRo) (VcE = Rated Vcgo, Ty = 150C) Emitter Cutoff Current (VEB=5 V) Collector Capacitance (Vcp =10V,f= 1 MHz Gain Bandwidth Product (Vcr = 10 V, I, = 20 mA) Switching Times Delay Time and Rise Time di, = 1A, Igy = 0.1 A) Storage Time (i, = 1A, Ip, =Ipo = 0.1 A) Fall Time Bre 'B2 (lg = 1A, Tpi =Tpq = 0.1 A) IcES IcEo IEBO CcBo tg t ty ts tf TYP. ome 200 25 200 50 MAX. TYPICAL SATURATION VOLTAGE CHARACTERISTICS I,/T,/0 Yeeisaty SATURATION VOLTAGE - VOLTS oe (sar) I_7 COLLECTOR CURRENT ~ mA 2 & SATURATION VOLTAGE - VOLTS 1/1gs20 Ig -COLLECTOR CURRENT MAXIMUM PERMISSIBLE DC POWER DISSIPATION 111, 13,14 TOOT ~~] Vopg MAXIMUM: D40D 10, i CES \ + VeggMAXIMUM: D40D 7,8 aT 50 Mv aximum:04004,8/ : sb Te=50"C | ees" Y ed i 2% 5 Te? 70C 2 ! ga | . mae fpf ee 2 | | | t g : Ge A pp a I | 8 5 = __} a I = ' : _ Lo . ! o [++ ar | YcegMAXIMUM: D400 1,2,3-}_m} 0 | 4 jo te 10 20 30 40 50 60 70 8 30 100 Vee 1106 -COLLECTOR TO EMITTER VOLTAGE -VOLTS MHz nsec nsec nsecNee TRANSIENT THERMAL IMPEDANCE C /WATT 100 3 5 a Ig - COLLECTOR CURRENT - m& SAFE REGION OF OPERATION 2000 PEAK CURRENT 1000 800 600 400 200 50 4SEC PULSE 100 SEC PULSE 1000 SEC PULSE 100 50 MSEC PULSE a0 60 40 Voes MAX: D4001,2,3 20 Veeg MAX: D4004,5 Vegs MAX? 04007,8 i Voeg MAX! D40D10,11,13,14 I 40 I 2 4 6 8 10 20 40 60 80 100 MAXIMUM COLLECTOR TO EMITTER VOLTAGE - VOLTS I- COLLECTOR CURRENT - mA FORWARD BIASED DUTY CYCLE = 50% Te 70C 2000 PEAK CURRENT 1 wSEC PULSE 10 xSEC PULSE f000 100 wSEC PULSE 800 1000 SEC PULSE SO ~SEC PULSE 600 (00 80 60 40 Voces MAX: 040D1,2,3 Voes MAX? D40D4,5 20 Voes MAX: D4007,8 VeEs MAX: D40010, 11,1314 | 2 4 6 8 10 20 40 60 80100 MAXIMJM COLLECTOR TO EMITTER VOLTAGE - VOLTS TYPICAL Hee VS Ic Voge = 2V 04001,4,740 to 02 Ig - COLLECTOR CURRENT -mA Vog =2V 04002,5,6,1! Ty 25C An =~ 55C Tp- COLLECTOR CURRENT-mA MAXIMUM TRANSIENT THERMAL IMPEDANCE 1075 107 TIME IN SECONDS 10-5 1107 1072 JUNCTION TO AMBIENT WITHOUT TAB JUNCTION TO AMBIENT WITH TAB JUNCTION TO TAB Vog *20V. Ig #200mA. 107! \ 10 100TYPICAL VcER 3 x 3 an 3 30 VoeR- COLLECTOR To EMITTER VOLTAGE -VvoLTS 102 103 104 Rpg BASE TO EMITTER RESISTANCE ~ OHMS I ~COLLECTOR CURRENTmA Vge- BASE EMITTER VOLTAGE -VoLTS TYPICAL INPUT CHARACTERISTICS Ty 7150C Ty7 BASE CURRENT ~ MICROAMPS TYPICAL TRANSCONDUCTANCE CHARACTERISTICS Vog=2 D4001,4,7,10,13 VBE-BASE TO EMITTER VOLTAGE - VOLTS | | 075x450 oes CHAMFER 10s 095 TYPE U LEAD LABELS |. EMITTER 2. BASE 3. COLLECTOR ! 3 b- S 9 2 926 i 105 Org aw ie 105 le 02 095 190 *S5y NOTE 2 Re NOTES |. ALL DIM. ARE IN ITNCHES AND ARE REF. UNLESS TOLERANCED 2..043-.057 LEAD WIDTH WITHIN 0.100 OF BODY Ig-COLLECTOR CURRENT - mA 4 Vpe BASE TOEMITTER VOLTAGE ~ VOLTS i 108 . 96 199 4 7: 140. a Kase 870 CHAMFER TYPE U FITS TO-5 PRINTED CIRCUIT BOARD MOUNTING CONFIGURATION FOR OPTIONAL LEAD CONFIGURATIONS SEE SELECTOR GUIDE 1108