2N6547 High voltage fast-switching NPN power transistor Datasheet - production data Features * * * * NPN transistor High voltage capability High current capability Fast switching speed Applications 1 * * 2 TO-3 ) s ( ct Figure 1: Internal schematic diagram ete u d o r P e Switched mode power supplies Flyback and forward single transistor low power converters t e l o Description s b -O u d o C(TAB) ) s ( ct Pr The 2N6547 is a high voltage Multiepitaxial Mesa NPN transistor mounted in a TO-3 metal case. It is particularly suited for switching and industrial applications from single and three-phase mains. Table 1: Device summary Order code Marking Packages Packaging 2N6547 2N6547 TO-3 Bag l o s B(1) b O E(2) SC08820 December 2012 DocID8252 Rev 3 This is information on a product in full production. 1/9 www.st.com Contents 2N6547 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 3 Package information ....................................................................... 6 3.1 4 TO-3 mechanical data ....................................................................... 7 Revision history .............................................................................. 8 ) s ( ct u d o r P e t e l o ) (s s b O t c u d o r P e t e l o s b O 2/9 DocID8252 Rev 3 2N6547 1 Electrical ratings Electrical ratings Table 2: Absolute maximum ratings Symbol Parameter Value Unit VCER Collector-emitter voltage (RBE = 50 ) 850 V VCES Collector-emitter voltage (VBE = 0) 850 V VCEO Collector-emitter voltage (IB = 0) 400 V VEBO Emitter-base voltage (IC = 0) 9 V IC Collector current 15 ICM Collector peak current 30 IB Base current 10 IBM Base peak current 20 PTOT Total dissipation at Tc = 25 C TSTG Storage temperature TJ Max. operating junction temperature ) (s e t e ol ) s ( ct A A u d o 175 W -65 to 200 C 200 C Pr A A s b O Table 3: Thermal data ct Symbol Parameter Rthj-case Thermal resistance junction-case max. e t e ol du Value Unit 1 C/W o r P s b O DocID8252 Rev 3 3/9 Electrical characteristics 2 2N6547 Electrical characteristics Table 4: Electrical characteristics Symbol Parameter Test conditions ICES Collector cut-off current ICER IEBO VCEO(sus) VCE(sat) VBE(sat) (1) (1) (1) hFE fT (1) (1) Max. Unit VCE = 850 V 1 mA VCE = 850 V, Tc = 100 C 4 mA (VBE = 0 ) Collector cut-off current (RBE = 10 ) VCE = 850 V, Tc = 100 C 5 mA Emitter cut-off current (IC = 0) VEB = 9 V 1 Collector-emitter sustaining voltage (IB = 0) IC = 100 mA Collector-emitter saturation voltage IC = 10 A, IB = 2 A DC current gain ct (s) CCBO u d o Collector-base capacitance (IE=0) V IC = 10 A, IB = 2 A, Tc = 100 C 2.5 V IC = 10 A, IB = 2 A 1.6 V 1.6 V Pr bs IC = 5 A, VCE = 2 V 12 IC = 10 A, VCE = 2 V 6 IC = 10 A, IB = 2 A, Tc = 100 C IC = 0.5 A, VCE = 10 V, f = 1 MHz VCB = 10 V, f = 1 MHz Pulse test: pulse duration 300 s, duty cycle 2% s b O 4/9 V 5 IC = 15 A, IB = 3 A t e l o (1) u d o mA V r P e Notes: (s) ct 400 -O Transition frequency Typ. 1.5 e t e ol Base-emitter saturation voltage Min. DocID8252 Rev 3 30 3 MHz 360 pF 2N6547 Electrical characteristics Table 5: Resistive load Symbol Parameter Test conditions Min. Typ. Max. Unit ton Turn-on time - - 1 s ts Storage time VCC = 250 V, IC = 10 A IB1 = - IB2 = 2 A, Tp 25 s - - 4 s tf Fall time - - 0.7 s Table 6: Inductive load Parameter Test conditions Min. Typ. ts Storage time VCL = 450 V, IC = 10 A, LC = 180 mH, IB1 = 2 A, VBE = -5 V, Tc = 100 C - tf Fall time uc ) s ( t Symbol d o r - - - Max. Unit 5 s 1.5 s P e t e l o ) (s s b O t c u d o r P e t e l o s b O DocID8252 Rev 3 5/9 Package information 3 2N6547 Package information In order to meet environmental requirements, ST offers these devices in different grades of (R) (R) ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. (R) ECOPACK is an ST trademark. ) s ( ct u d o r P e t e l o ) (s s b O t c u d o r P e t e l o s b O 6/9 DocID8252 Rev 3 2N6547 3.1 Package information TO-3 mechanical data Table 7: TO-3 mechanical data Dim. mm Min. Typ. Max. A 11.00 13.10 B 0.97 1.15 C 1.50 1.65 D 8.32 E 19.00 G 10.70 N 16.50 P 25.00 R 4.00 U 38.50 V 30.00 ) s ( ct 8.92 - 20.00 u d o 11.10 r P e t e l o ) (s s b O 17.20 26.00 4.09 39.30 30.30 Figure 2: TO-3 mechanical data drawing t c u d o r P e t e l o s b O 0015923_C DocID8252 Rev 3 7/9 Revision history 4 2N6547 Revision history Table 8: Revision history Date Revision 12-Dec-2012 3 Changes Changed FT value in electrical characteristics table. ) s ( ct u d o r P e t e l o ) (s s b O t c u d o r P e t e l o s b O 8/9 DocID8252 Rev 3 2N6547 Please Read Carefully Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at anytime, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. 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