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This is information on a product in full production.
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2N6547
High voltage fast-switching NPN power transistor
Datasheet - product ion data
Figure 1: Internal schematic diagram
Features
• NPN transistor
• High voltage capability
• High current capability
• Fast switching speed
Applications
• Switched mode power supplies
• Flyback and forward single transistor low
power converters
Description
The 2N6547 is a high voltage Multiepitaxial Mesa
NPN transistor mounted in a TO-3 metal case. It
is particularly suited for switching and industrial
applications from single and three-phase mains.
Table 1: Device summary
Order code Marking Packages Packaging
2N6547 2N6547 TO-3 Bag
1
2
TO-3
SC08820
C(TAB)
B(1)
E(2)
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Contents
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Contents
1 Electrical ratings ............................................................................. 3
2 Electrical characteristics ................................................................ 4
3 Package information ....................................................................... 6
3.1 TO-3 mec hanical data ....................................................................... 7
4 Revision history .............................................................................. 8
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Electrical ratings
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1 Electrical ratings
Table 2: A bsolut e maximum r ating s
Symbol Parameter Value Unit
VCER Collector-emitter voltage (RBE = 50 Ω) 850 V
VCES Collector-emitter voltage (VBE = 0) 850 V
VCEO Collector-emitter voltage (IB = 0) 400 V
VEBO Emitter-base voltage (IC = 0) 9 V
IC Collector current 15 A
ICM Collector peak current 30 A
IB Base current 10 A
IBM Base peak current 20 A
PTOT Total dis sipation at Tc = 25 °C 175 W
TSTG Storage temperature -65 to 200 °C
TJ Max. operating junction temperature 200 °C
Table 3: Thermal data
Symbol Parameter Value Unit
Rthj-case Thermal resi stan ce jun cti on-case max. 1 °C/W
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Electrical characteristics
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Table 4: Electri cal characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
ICES
Collector cut-off current
(VBE = 0 )
VCE = 850 V 1 mA
VCE = 850 V, Tc = 100
°C 4 mA
ICER Collector cut-off current (RBE =
10 Ω) VCE = 850 V, Tc = 100
°C 5 mA
IEBO Emitter cut-off current (IC = 0) VEB = 9 V 1 mA
VCEO(sus)(1) Collector-emitter sustaining
voltage (IB = 0) IC = 100 mA 400 V
VCE(sat)(1) Collector-emitter saturation
voltage IC = 10 A, IB = 2 A 1.5 V
IC = 15 A, IB = 3 A 5 V
IC = 10 A, IB = 2 A, Tc =
100 °C 2.5 V
VBE(sat)(1) Base-emitter saturation
voltage IC = 10 A, IB = 2 A 1.6 V
IC = 10 A, IB = 2 A, Tc =
100 °C 1.6 V
hFE(1) DC current gain IC = 5 A, VCE = 2 V 12 30
IC = 10 A, VCE = 2 V 6
fT
(1)
Transition frequency IC = 0.5 A, VCE = 10 V, f
= 1 MHz 3
MHz
CCBO Collector-base capacitance
(IE=0) VCB = 10 V, f = 1 MHz 360 pF
Notes:
(1)Pulse test: pulse duration ≤ 300 µs, duty cycle ≤ 2%
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Electrical characteristics
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Table 5: Resistive load
Symbol Parameter Test conditions Min. Typ. Max. Unit
ton Turn-on time VCC = 250 V, IC = 10 A
IB1 = - IB2 = 2 A, Tp ≥ 25 µs
- - 1 µs
ts Storage time - - 4 µs
tf Fall time - - 0.7 µs
Table 6: Inductive load
Symbol
Parameter Test conditions Min. Typ. Max. Unit
ts Storage
time VCL = 450 V, IC = 10 A, LC = 180 mH, IB1 = 2
A, VBE = -5 V, Tc = 100 °C - - 5 µs
tf Fall time - - 1.5 µs
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Package information
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In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
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0015923_C
3.1 TO-3 mechanical data
Table 7: TO-3 mechanical data
Dim.
mm
Min. Typ. Max.
A 11.00
-
13.10
B 0.97 1.15
C 1.50 1.65
D 8.32 8.92
E 19.00 20.00
G 10.70 11.10
N 16.50 17.20
P 25.00 26.00
R 4.00 4.09
U 38.50 39.30
V 30.00 30.30
Figure 2: TO-3 mechanical data drawing
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Revision history
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Table 8: Revision history
Date Revision Changes
12-Dec-2012 3 Changed FT value in electri cal chara cteristics table.
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