|SAMSUNG SEMICONDUCTOR INC = =s-L4E Off 2964242 oonz288 & MMBTAOS NPN EPITAXIAL SILICON TRANSISTOR Tae DRIVER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS (T.=25C) . Characteristic Symbol | Rating | Unit Collector-Base Voltage Veso 60 Vv Cotlector-Emitter: Voltage Veeo 60 Vv Emitter-Base Voltage , Veao 4 Vv . Collector Current (max) i 500 mA Collector Dissipation Po 350 mw Storage Temperature . Tsta 150 C Thermal Resistance Junction to Ambient Rth(-a) 357 C Refer to MPSAOS5 for graphs 1. Base 2. Emitier 3. Coltector ELECTRICAL CHARACTERISTICS (T, =25C) Characteristic Symbot Test Condition _ Min Max | Unit *Collector-Emitter Breakdown Voltage | BVceo k=1mA, !s=O : 60 v Emitter-Base Breakdown Voltage BVeno le=100pA, Ig=O0 4 Vv Collector Cutoff Current lesa Vca=60V, =O 0.1 pA Collector Cutoff Current tceo Vce=60V, la=0 0.1 pA DC Current Gain Nee Vce=1V, le=10mA 50 Vce=1V, k= 100mA 50 Collector-Emitter Saturation Voltage Vee (sat). | =100mA, !g=10mA 0.25 Vv Base-Emitter On Voltage Vee (on) Vce=1V, b= 100MA 1.2 Vv Current Gain-Bandwidth Product fr Voce 2V, lb=10mA, f= 100MHz 100 MHz * Pulse Test: PW<300us, Duty Cycles2% Marking A . 1 H A ce SAMSUNG SEMICONDUCTOR ; 558