MMBR901MLT1/MRF9011MLT1 RF PRODUCTS RF & MICROWAVE TRANSISTORS DIVISION DESCRIPTION KEY FEATURES EL PR The MMBR901LT1/MRF9011LT1 are low noise, high gain, discrete silicon bipolar transistors housed in low cost plastic packages. ! Low noise-1.8dB@1GHz ! Low cost SOT23/SOT143 package IMPORTANT: For the most current data, consult MICROSEMI's website: http://www.microsemi.com Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature Value 25 15 2.0 30 375 150 -55 to +150 APPLICATIONS/BENEFITS APPLICATIONS/BENEFITS Unit V V V mA mW C C IM Symbol VCBO VCEO VEBO IC PDISS TJ TSTG ABSOLUTE MAXIMUM RATINGS (TCASE = 25 C) ! LNA, Oscillator, Pre-Driver SOT-143 SOT-23 MRF9011MLT1 MMBR901MLT1 THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance 250 W W W . Microsemi .COM ! High FTau-3.8GHz C/W Symbol BVCBO BVCEO I CBO hFE Test Conditions IC = .1mA IC =1.0mA VCB = 15V VCE = 5 V IE = 0 IB = 0 IE = 0 IC = 5 mA Y AR IN STATIC ELECTRICAL SPECIFICATIONS (TCASE = 25 C) Min. 25 15 Typ. Max. 50 200 30 Units V V nA Symbol CCB FTau NFmin GNF S 21 2 Test Conditions VCB = 10 V f = 1.0 MHz VCE = 10 V IC= 15 mA f VCE = 10 V IC= 5 mA f VCE = 10 V IC= 5 mA f VCE = 6 V IC= 5 mA f Copyright 2000 CXXXX.PDF 2000-11-06 = 1.0 GHz = 1.0 GHz = 1.0 GHz = 1.0 GHz Min. Microsemi Typ. 0.55 3.8 1.8 13.5 12 Max. RF Products Division 140 Commerce Drive, Montgomeryville PA 18936, (215) 631-9840, Fax: (215) 631-9855 Units PF GHz dB dB dB Page 1 of 1 MMBR901MLT1/MRF9011MLT1 DYMANIC ELECTRICAL SPECIFICATIONS (TCASE = 25 C)