PRELIMINARY
Microsemi
RF Products Division
140 Commerce Drive, Montgomeryville PA 18936, (215) 631-9840, Fax: (215) 631-9855
Page 1 of 1
Copyright 2000
CXXXX.PDF 2000-11-06
WWW.Microsemi .COM
MMBR901MLT1/MRF9011MLT1
RF & MICROWAVE TRANSISTORS
RF PRODUCTS DIVISION
DESCRIPTION
DESCRIPTIONDESCRIPTION
DESCRIPTION
The MMBR901LT1/MRF9011LT1 are low noise, high gain, discrete
silicon bipolar transistors housed in low cost plastic packages.
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
KEY FEATURES
KEY FEATURES KEY FEATURES
KEY FEATURES
!
APPLICATIONS/BENEFIT
APPLICATIONS/BENEFITAPPLICATIONS/BENEFIT
APPLICATIONS/BENEFITS
SS
S
! LNA, Oscillator
, Pre-Driver
ABSOLUTE MAXIMUM RATINGS
(T
CASE
= 25
C)
Symbol Parameter Value Unit
VCBO
Collector-Base Voltage 25 V
VCEO
Collector-Emitter Voltage 15 V
VEBO
Emitter-Base Voltage 2.0 V
IC
Device Current 30 mA
PDISS
Power Dissipation 375 mW
TJ
Junction Temperature 150 C
TSTG
Storage Temperature -55 to +150
C
THERMAL DATA
RTH(j-c)
Junction-Case Thermal Resistance 250 C/W
MMBR901MLT1/MRF9011MLT1
!
!
High FTau-3.8GHz
Low noise-1.8dB@1GHz
Low cost SOT23/SOT143
package
SOT-23
MMBR901MLT1
SOT-143
MRF9011MLT1
STATIC ELECTRICAL SPECIFICATIONS (TCASE = 25C)
Symbol Test Conditions Min. Typ. Max.
Units
BV
CBO
I
C
= .1mA I
E
= 0 25 V
BV
CEO
I
C
=1.0mA I
B
= 0
15 V
I
CBO
V
CB
= 15V I
E
= 0
50
nA
h
FE
V
CE
= 5 V I
C
= 5 mA
30 200
DYMANIC ELECTRICAL SPECIFICATIONS (TCASE = 25C)
Symbol Test Conditions Min. Typ. Max.
Units
f = 1.0 MHz
V
CB
= 10 V
GHz
F
CB
C
FTau
NF
G
NFmin
P
0.55
3.8
1.8
13.5
V
CE
= 10 V I = 15 mA
C
f = 1.0 GHz
V
CE
= 10 V I = 5 mA
C
f = 1.0 GHz
V
CE
= 10 V I = 5 mA
C
f = 1.0 GHz
S21
2
V
CE
= 6 V I = 5 mA
C
f = 1.0 GHz 12
dB
dB
dB
