Data Sheet
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Zener diode
EDZV series
Applications Dimensions (Unit : mm) Land size figure (Unit : mm)
Constant voltage control
Features
1) Compact,2-pin mini-mold type for
high-density mounting.(EMD2)
2) High reliability.
3) Can be mounted automatically,
using chip mounter.
Structure
Construction
Silicon epitaxial planar
Taping dimensions (Unit : mm)
Absolute maximum ratings (Ta=25°C)
Symbol Unit
PmW
Tj °C
Tstg °C
Topr °C
Junction temperature 150
Operating temperature 55 to 150
Parameter Limits
Storage temperature 55 to 150
Power dissipation 150
EMD2
0.8
1.7
0.6
ROHM : EMD2
JEITA : SC-79
JEDEC :SOD-523
0.12±0.05
0.6±0.1
0.3±0.05
0.8±0.05
1.2±0.05
1.6±0.1
EX. EDZV3.6B
dot (year week factory)
1/5 2011.10 - Rev.A
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Data Sheet
EDZV series
Electical characteristics (Ta=25°C)
MIN. MAX. Iz(mA) MAX. Iz(mA) MAX. Iz(mA) MAX. VR(V)
EDZV 3.6B 3.600 3.845 5.0 100 5.0 1000 1.0 10.0 1.0
EDZV 3.9B 3.890 4.160 5.0 100 5.0 1000 1.0 5.0 1.0
EDZV 4.3B 4.170 4.430 5.0 100 5.0 1000 1.0 5.0 1.0
EDZV 4.7B 4.550 4.750 5.0 100 5.0 800 0.5 2.0 1.0
EDZV 5.1B 4.980 5.200 5.0 80 5.0 500 0.5 2.0 1.5
EDZV 5.6B 5.490 5.730 5.0 60 5.0 200 0.5 1.0 2.5
EDZV 6.2B 6.060 6.330 5.0 60 5.0 100 0.5 1.0 3.0
EDZV 6.8B 6.650 6.930 5.0 40 5.0 60 0.5 0.5 3.5
EDZV 7.5B 7.280 7.600 5.0 30 5.0 60 0.5 0.5 4.0
EDZV 8.2B 8.020 8.360 5.0 30 5.0 60 0.5 0.5 5.0
EDZV 9.1B 8.850 9.230 5.0 30 5.0 60 0.5 0.5 6.0
EDZV 10B 9.770 10.210 5.0 30 5.0 60 0.5 0.1 7.0
EDZV 11B 10.760 11.220 5.0 30 5.0 60 0.5 0.1 8.0
EDZV 12B 11.740 12.240 5.0 30 5.0 80 0.5 0.1 9.0
EDZV 13B 12.910 13.490 5.0 37 5.0 80 0.5 0.1 10.0
EDZV 15B 14.340 14.980 5.0 42 5.0 80 0.5 0.1 11.0
EDZV 16B 15.850 16.510 5.0 50 5.0 80 0.5 0.1 12.0
EDZV 18B 17.560 18.350 5.0 65 5.0 80 0.5 0.1 13.0
EDZV 20B 19.520 20.390 5.0 85 5.0 100 0.5 0.1 15.0
EDZV 22B 21.540 22.470 5.0 100 5.0 100 0.5 0.1 17.0
EDZV 24B 23.720 24.780 5.0 120 5.0 120 0.5 0.1 19.0
EDZV 27B 26.190 27.530 2.0 150 2.0 150 0.5 0.1 21.0
EDZV 30B 29.190 30.690 2.0 200 2.0 200 0.5 0.1 23.0
EDZV 33B 32.150 33.790 2.0 250 2.0 250 0.5 0.1 25.0
EDZV 36B 35.070 36.870 2.0 300 2.0 300 0.5 0.1 27.0
(1) The zener voltage(Vz) is measured 40ms after power is supplied.
(2) The operating resistances(Zz,Zzk) are measured by superimposing a minute alternating current
on the regulated current(Iz)
MARKING (Type No.)
TYPE TYPE NO. TYPE TYPE NO.
EDZV 3.6B 62 EDZV 12B 25
EDZV 3.9B 72 EDZV 13B 35
EDZV 4.3B 82 EDZV 15B 45
EDZV 4.7B 92 EDZV 16B 55
EDZV 5.1B A2 EDZV 18B 65
EDZV 5.6B C2 EDZV 20B 75
EDZV 6.2B E2 EDZV 22B 85
EDZV 6.8B F2 EDZV 24B 95
EDZV 7.5B H2 EDZV 27B A5
EDZV 8.2B J2 EDZV 30B C5
EDZV 9.1B L2 EDZV 33B E5
EDZV 10B 05 EDZV 36B F5
EDZV 11B 15
Rising operataing
resistance ：Zz(Ω)Reverse current ：
IR(A)
TYP.
Symbol
Zener voltage ：Vz(V) Operating resistance ：Zz(Ω)
2/5 2011.10 - Rev.A
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© 2011 ROHM Co., Ltd. All rights reserved.
Data Sheet
EDZV series
10
100
1000
0.001 0.01 0.1 1 10 100 1000
Rth(j-a)
Rth(j-c)
0.1
1
10
100
1000
0.001 0.01 0.1 1 10 100
POWER DISSIPATION:Pd(mW)
TIME:t(ms)
PRSM-TIME CHARACTERISTICS
TEMP.COEFFICIENCE:γz(%/°C)
ZENER VOLTAGE：Vz(V)
γz-Vz CHARACTERISTICS TIME:t(s)
Rth-t CHARACTERISTICS
TRANSIENT
THAERMAL IMPEDANCE:Rth (°C/W) REVERSE SURGE MAXIM U M
POWER:PRSM(W)
0
50
100
150
200
0 25 50 75 100 125 150
0.001
0.01
0.1
1
10
0 5 10 15 20 25 30 35 40
24
2018
16
15
13
12
11
10
9.1
6.2
5.1
36
33
22 30
27
3.6
8.2
7.5
5.6
6.8
4.7
4.3
3.9
ZENER CURRENT:Iz(mA)
ZENER VOLTAGE:Vz(V)
Vz-Iz CHARACTERISTICS
-0.08
-0.06
-0.04
-0.02
0
0.02
0.04
0.06
0.08
0.1
0 10203040
-5
0
5
10
15
20
25
30
35
40
AMBIENT TEMPERATURE:Ta(°C)
Pd-Ta CHARACTERISTICS
TEMP.COEFFICIENCE:γz(mV/°C)
t
PRSM
1pulse
Input waveform
Mounted on epoxy board
%/°C
mV/°C
3/5 2011.10 - Rev.A
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© 2011 ROHM Co., Ltd. All rights reserved.
Data Sheet
EDZV10B
4/5 2011.10 - Rev.A
0.001
0.01
0.1
1
10
99.5 10 10.5 11
Ta=−25°C
Ta=125°C
Ta=75°C
Ta=25°C
ZENER CURRENT:Iz(mA)
ZENER VOLTAGE:Vz(V)
Vz−Iz CHARACTERISTICS
0.01
0.1
1
10
100
1000
02468
Ta=125°C
Ta=25°C
Ta=75°C
REVERSE VOLT AGE：VR(V)
VR−IR CHARACTERISTICS
REVERSE CURRENT:IR (pA)
1
10
100
02468
f=1MHz
CAPACITANC E BETWEEN
TERMINALS:Ct(pF)
REVERSE VOLT AGE:VR(V)
VR-Ct CHARACTERISTICS
9.7
9.8
9.9
10.0
10.1
10.2
AVE:9.996V
Ta=25°C
IZ=5mA
n=30pcs
Vz DISRESION MAP
ZENER VOLTAGE:Vz(Ｖ)
0
1
2
3
4
5
6
7
8
9
10
Ta=25°C
VR=7.0V
n=30pcs
AVE:1.053pA
IR DISRESION MAP
REVERSE CURRENT:IR(pA)
10
11
12
13
14
15
16
17
18
19
20
AVE:17.4pF
Ta=25°C
f=1MHz
VR=0V
n=10pcs
Ct DISRESI ON MAP
CAPACITANCE
BETWEENTERMINALS:Ct(pF)
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© 2011 ROHM Co., Ltd. All rights reserved.
Data Sheet
EDZV10B
5/5 2011.10 - Rev.A
1
10
100
1000
0.1 110
ZENER CURRENT(mA)
Zz−Iz CHARACTERISTICS
DYNAMIC IMPEDANCE: Zz (Ω)
0
5
10
15
20
25
30
C=200pF
R=0Ω C=150pF
R=330Ω C=100pF
R=1.5kΩ
AVE：13.8kV
No break at 30kV No break at 30kV
ESD DISPERSIO N MAP
ELECTROSTATIC
DISCHARGE TEST ESD [kV]
R1120A
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