MEGOHM CHIP RESISTORS MSTF 4 MSTF 4 SERIES 0.040" SIZE RESIST ANCE RANGE RESISTANCE 0.040" x 0.040" x .010" 0.003" 1M TO 15M 1M 15M CHIP RESISTORS MSTF 6 SERIES 0.060" x 0.060" x .010" 0.003" 2M TO 35M 2M 35M SIZE RESIST ANCE RANGE RESISTANCE 0.040" MSDR 4 SERIES SIZE RESIST ANCE RANGE RESISTANCE RESIST ANCE RA TIO RESISTANCE RATIO MSTF 6 0.040" x 0.040" x .010" 0.003" 1M TO 10M 1M 10M 1% ST ANDARD; OPTIONAL TO 0.1% STANDARD; COMMON SERIES DA TA DAT 0.060" 0.060" MSDR 4 0.040" SUBSTRA TE MA TERIAL SUBSTRATE MATERIAL BOND P ADS PADS BACKSIDE SURFACE TOLERANCES T.C.R. NICHROME TANT ALUM NITRIDE ANTALUM CURRENT NOISE DIELECTRIC BREAKDOWN INSULA TION RESIST ANCE INSULATION RESISTANCE OPERA TING VOL TAGE OPERATING VOLT POWER RA TING RATING SHORT TERM OVERLOAD HIGH TEMP EXPOSURE THERMAL SHOCK MOISTURE RESIST ANCE RESISTANCE ST ABILITY STABILITY OPERA TING TEMP RANGE OPERATING STRA Y DISTRIBUTED STRAY CAP ACIT ANCE CAPACIT ACITANCE SILICON QUARTZ SILICON, QUARTZ, OR GLASS GOLD (15,000 A MIN.), OPTIONAL: ALUMINUM (10,000 A MIN.) BARE SUBSTRA TE OR GOLD BACK OPTIONAL SUBSTRATE 0.5%, 1%, 2%, 5%, 10%; TO 0.1% AVAILABLE** 25ppm/C ST ANDARD; OPTIONAL TO 5ppm/C STANDARD; 150ppm/C ST ANDARD; OPTIONAL TO 10ppm/C STANDARD; -20dB 400 V MIN. 10 12 MIN. 100 V MAX. 250 mW (70C DERA TED LINEARL Y TO 150C) P = 2 / R DERATED LINEARLY 5X RA TED POWER, 25 0. 0.22 5% MAX. R/R RATED 25 C, 5 SEC., 0. 150C, 100 HRS., 0.25% 0.25% MAX. R/R MIL-STD 202, METHOD 107F 0.25% MAX. R/R 107F,, 0.25% MIL-STD 202, METHOD 106, 0. 0. 0.55% MAX. R/R 1000 HRS., 70 C, 100% Power 0.5% MAX. R/R 70C, Power,, 0.5% -5 -555C TO +150C 2pF 0.02pF PART NUMBER DESIGNA TION DESIGNATION 0.040" R1 R2 R1 = R2 R1 + R2 = Rt Note: If R1 = R2, then custom design required. XXXXX X X XXXXX SERIES SUBSTRA TE SUBSTRATE RESISTIVE FILM TOT AL TOTAL OHMIC VALUE MSTF4 MSTF6 MSDR4 G = Glass Q = Quartz S = Silicon N = Nichrome T = Tantalum Nitride 5-Digit Number: 1st 4 Digits Are Significant With "R" As Decimal Point When Required. 5th Digit Represents Number of Zeros. X TOLERANCE ** B D F G J K EXAMPLES: MSTF4SN-10003F-G = 0.040" x 0.040", Silicon Substrate, Nichrome Resistor ol., Gold Bond Pads. Resistor,, 1M 1M , 1% TTol., MSTF6ST -10004F-FGB = 0.060" x 0.060", Silicon Substrate, MSTF6ST-10004F-FGB Tantalum Nitride Resistor , 1% TTol., ol., 100ppm/C Resistor,, 10M 10M Gold Backside MINI-SYSTEMS, INC. THIN FILM DIVISION 20 DA VID ROAD, N. A TTLEBORO, MA 02760 DAVID ATTLEBORO, 508-695-0203 FAX: 508-695-6076 MSDR4SN-10004F-RCE = 0.040" x 0.040", Silicon Substrate, Nichrome Resistor , 1% TTol., ol., 0.1% Ratio, Aluminum Resistor,, 10M 10M Bond Pads. **Consult Sales department for tolerances <0.5%. DCN TF 103-G-0306 = 0.1% = 0.5% = 1% = 2% = 5% = 10% X OPTION DESIGNA TOR DESIGNATOR (If Required) A = 50ppm/C B = 25ppm/C C = 10ppm/C D = 5ppm/C E = Aluminum Bond Pads GB = Gold Backside F = 100ppm/C G = Gold Bond Pads (Always used when no other option is required) RC = 0.1% Ratio* RD = 0.5% Ratio* * MSDR-4 ONL Y ONLY