2817 Vi ALY RYT BME = i A nH AABN se BE BE a u 4% aati TAAC | TCAC | TOH| TOE | TOD vod 1 DD/STANDBY VIL VIK | Ci VOL/VOL VOH/IVOH | Co (C) max. | max | max | max | max max min | max max nin max [typ] (ns) | (ns) | (ns) | (ns) | (ns) v) (mA) () () | @P) | (W/mA) (V/A) (pF) 28C17-15 MICROCHIP O~70 | 150 | 150 tof 73 50 4, 5~5.5 30/2 0.8 2.0 0. 45/2.1 2.4/0.4 28017-20 MICROCHIP O~70 | 200} 200 Ig} 8) 55 4.5~5.5 30/2 0.8 2.0 0, 45/2. 1 2.4/0.4 28C17-25 MICROCHIP O~70 | 250} 250 10} 120) 70 4.5~5.5 30/2 08 2.0 0, 45/2. 1 2.4/0. 4 287A INTEL O~70] 250} 250 0 60 4. 75~5. 25 120/55 0.8 2.0 10 0. 45/2. 1 2.4/0. 4 10 | NMOS 2817A-1 INTEL O~76 + 200) 200 6 60, 4. 75~-5. 25 120/55 0.8 2.0 16 0. 45/2. 1 2.4/0.4 10 | NMOS 2817A-2 INTEL O~70 | 200} 200 0 60] 4. 75~-5. 25 120/55 0.8 2.0 10 0. 45/2. 1 2.4/0.4 10 | NMOS 2817A-3 INTEL O~70 | 350} 350 a 80} 4. 75~-5.25 120/55 0.8 2.0 10 G. 45/2. 4 2.4/0.4 10 | NMOS 2817A-4 INTEL O~70 | 450] 450 a 100] 4. 75~-5. 25 120/55 0.8 2.0 10 0. 45/2.1 2.4/0.4 10 | NMOS 2817A-350 SEEQ O~70} 350) 350 0 80 4.55.5 110/40 0.8 2.0 6 0.4/2.1 2. 4/0. 4 10 2817A/AH-200 SEEQ O~70} 200] 200 0 60 4,545.5 110/40 0.8 2.0 6 0.4/2.1 2.4/0.4 10 2817A/AH-250 SEEQ O~70} 250} 250 0 60 4.5~5.5 110/40 08 2.0 6 0.4/2.1 2. 4/0. 4 10 2817A/AH- 300 SEEQ O~70 | 300} 300 0 60 4.5~5.5 110/40 0.8 2.0 6 0.4/2.1 2.4/0. 4 10 5517A/AH-200 SEEQ O~70 | 200; 200 0 60 4. 5~5. 5 110/40 0.8 2.0 6 0.4/2.1 2.4/0.4 10 5517A/AH-250 SEEQ O~70] 250) 250 0 60 4.5~5.5 110/40 0.8 2.0 fi 0.4/2.1 2.4/0.4 10 5517A/AH- 300 SEEQ O~70{ 300) 300 0 60 4.5~5.5 110/40 0.8 2.0 6 0.4/2.1 2.4/0.4 i0 AT28017-15 ATMEL O~70}] 150] 150 0 70 50 4. 5~-5.5 30/2 0.8 2.0 4* 0.4/2.1 2.4/0.4] 8+ AT28017-20 ATMEL O~70 | 200} 200 0; 80 59 4, 5~5.5 30/2 0.8 2.0 4 0.4/2.1 2.4/0.4] 8 AT28C17-25 ATMEL O~70 | 250 | 250 0} 100] 60 4, 5-~5.5 30/2 0.8 2.0 4 0.4/2.1 2.4/0.4) 8 CAT28C17A-15 CATALYST O~70] 150) 150 20 50 4.5~5.5 35/1 0.8 2.0 6 0.4/2.1 2.4/0.4 10 | CMOS CAT28C17A-20 CATALYST O~70]| 200} 200} 20 55 4.5~5.5 38/1 0.8 2.0 6 0.472. 1 2.4/0. 4 10 | CMOS CAT28C17A-25 CATALYST O~70| 250} 250 20 60 4.5~5.5 35/1 0.8 2.0 6 0.4/2.1 2.4/0. 4 10 | CMOS KM280171-15 SAM -40~85 | 150) 150 10 60 4.5~5.5 30/1 0.8 2.0 8 0.4/2.1 2.4/0. 4 8 KM280171-20 SAM -40~85 | 200) 200 10 80 4,5~5.5 30/1 0.8 2.0 8 0.4/2.1 2.4/0.4 8 KM28C171-25 SAM ~40~85 | 250) 250 10 | 100 4, 5~-5.5 30/1 0.8 2.0 8 0.4/2.1 2.4/0.4 8 KM2817A-25 SAM O~70| 250} 250 20| 120 60 4. 5~5.5 110/50 0.8 2.2 6 0.4/2.1 2.4/0.4 10 KH2817A-30 SAM O~70] 300} 300; 20] 120] 980 4. 5~-5. 5 110/50 0.8 2.2 6 0.4/2.1 2.4/0. 4 10 KM2817A-35 SAM Q~70) 350] 350 20} 120 90 4.5~5.5 110/50 0.8 2.2 6 0.4/2.1 2.4/0.4 10 NMC9817-20 NS O~70| 200} 200 i 80, 4. 75-5. 25 80/25 a8 2.0 10 0, 45/2. 1 2.4/0.4 10 NMC9817-25 NS O~-70 | 250} 250 0 100 4. 75~-5, 25 80/25 0.8 2.0 10 0. 45/2.1 2.4/0.4 10 NMC9817-35 NS O~70| 350| 350 0 WOO] 4. 75~~5. 25 80/25 0.8 2.0 10 0. 45/2. 1 2.4/0.4 10 NMC9817A-20 NS O~70| 200} 200 0 80} 4. 75~5. 25 80/25 0.8 2.0 10 0. 45/2. 1 2.4/0. 4 10 NMC9817A-25 NS O~70] 250} 250 0 100] 4. 75~-5. 25 80/25 0.8 2.0 10 6. 45/2.1 2.4/0.4 10 NMC9817A-35 NS O~70| 350} 350 0 100] 4. 75~-5. 25 80/25 0.8 2.0 10 0. 45/2. 1 2.4/0.4 10 $-28171 SEIKO -50~-95 | 200 | 200 20} 80 55 4, 5~-5.5 35/1 0.8 2.0 6 0.4/2.4 2.4/0. 4 10 XLS2817A-200 EXEL O~70 | 200 | 200 0 GO] 4. 75~-5. 25 120/55 0.8 2.0 10 0. 45/2. 1 2.4/0.4 10 XLS2817A-250 EXEL O~70| 250} 250 0 GO] 4. 75~5. 25 120/55 0.8 2.0 10 0. 45/2.1 2.44.4) 10 XLS2817A-350 EXEL, O~-70| 350} 350 q 80) 4. 75~5. 25 120/55 0.8 2.0 10 0. 45/2. 1 2.4/0. 4 10 XLS2817A-450 EXEL O~70| 450} 450 0 10} 4. 75~5. 25} 120/55 0.8 2.0 10 0. 45/2. 1 2.4/0. 4 1016K n/CMOS EEPROM (2,048 <8) 28PIN Oe > RR ase @7or7k = @ +5vii-m th. R/B] @ 20ms CAA ul (HS). : NCL] @ VA AM I THAT AT TS, : 128 x 16 8 A7[3] MIAA DHE T *Ready/ Busy CHa 4. . (16384) A @ R/BOLVLALAS Vy tw TS), ae @ 2817 (Intel). No~ Aro ROM 42 As As Az Ai Ao WE DOo _ DO; cs DOz Vss [14] OE R/B DOo~ DO, OBR Vop: +5V. Pin 28 ik He Vss (GND) Pin 14 @ READ (OE=L) @ READ (CS=L) | Ao~ Ais Ao~A12 / cs Do | a) | DO DO | Read High-Z , JEHEIN DI | Write