Advance Technical Information HiPerFASTTM IGBT B2-Class High Speed IGBT VCES = 600 V = 40 A IC25 VCE(sat) = 2.3 V tfi(typ) = 80 ns IXGA 16N60B2 IXGP 16N60B2 IXGA 16N60B2D1 IXGP 16N60B2D1 D1 Symbol Test Conditions Maximum Ratings VCES TJ = 25C to 150C 600 V VCGR TJ = 25C to 150C; RGE = 1 M 600 V VGES Continuous 20 V VGEM Transient 30 V IC25 TC = 25C 40 A IC110 TC = 110C 16 A ID110 TC = 110C (IXG_16N60B2D1 diode) 11 A ICM TC = 25C, 1 ms 100 A SSOA (RBSOA) VGE = 15 V, TJ = 125C, RG = 22 Clamped inductive load ICM = 32 @0.8 VCES A PC TC = 25C 150 W -55 ... +150 C TJM 150 C Tstg -55 ... +150 C TJ Md Weight Mounting torque (M3.5 screw) TO-263 (IXGA) G C Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s 300 Maximum tab temperature soldering SMD devices for 10s 260 C 4 2 g g Test Conditions VGE(th) IC = 250 A, VCE = VGE ICES VCE = VCES VGE = 0 V IGES VCE = 0 V, VGE = 20 V VCE(sat) IC = 12A, VGE = 15 V Note 2 (c) 2004 IXYS All rights reserved Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 2.5 16N60B2 16N60B2D1 TJ=125C 1.8 5.0 V 25 50 A A 100 nA 2.3 V V C (TAB) C = Collector TAB = Collector Features z z z Symbol C E G = Gate E = Emitter z TO-220 TO-263 C (TAB) TO-220 (IXGP) G 0.55/5 Nm/lb.in. E International standard packages IGBT and anti-parallel FRED for resonant power supplies - Induction heating - Rice cookers MOS Gate turn-on - drive simplicity Fast Recovery Expitaxial Diode (FRED) - soft recovery with low IRM Advantages z z z Saves space (two devices in one package) Easy to mount with 1 screw Reduces assembly time and cost DS99141A(3/04) IXGP 16N60B2 IXGA 16N60B2D1 IXGA 16N60B2 IXGA 16N60B2D1 Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. gfs IC = 12A; VCE = 10 V, Note 2. Cies VCE = 25 V, VGE = 0 V, f = 1 MHz 12 S 780 pF 55 65 pF pF 19 pF 32 nC Qge 6 nC Qgc 10 nC 25 ns Coes 8 16N620B2 16N60B2D1 Cres Qg td(on) tri td(off) tfi IC = 20A, VGE = 15 V, VCE = 0.5 VCES Inductive load, TJ = 25C 15 IC = 12 A; VGE = 15 V VCE = 400 V; RG = Roff = 22 Note 1. Eoff td(on) tri Eon td(off) tfi IC = 12A; VGE = 15 V VCE = 400 V; RG = Roff = 22 (16N60B2) Symbol Test Conditions 150 ns 150 260 J ns ns 110 ns 170 ns 350 J 0.5 0.83 K/W K/W TO-263 Outline Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. VF IF = 10 A, VGE = 0 V TJ = 125 C IRM IF = 12 A; -diF/dt = 100 A/s, VR = 100 V t rr VGE = 0 V; TJ = 125 C t rr IF = 1 A; -diF/dt = 100 A/s; VR = 30 V, VGE = 0 V 2.66 1.66 V V 2.5 A 110 ns 30 ns 2.5 K/W RthJC Notes: 80 mJ (IXGP) Reverse Diode (FRED) ns 18 Eoff RthJC RthCK 150 0.35 Note 1 Pins: ns 70 25 Inductive load, TJ = 125C TO-220 Outline 1. Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ or increased RG. 2. Pulse test, t < 300 s, duty cycle d < 2 % Dim. Millimeter Min. Max. Inches Min. Max. A A1 4.06 2.03 4.83 2.79 .160 .080 .190 .110 b b2 0.51 1.14 0.99 1.40 .020 .045 .039 .055 c c2 0.46 1.14 0.74 1.40 .018 .045 .029 .055 D D1 8.64 7.11 9.65 8.13 .340 .280 .380 .320 E E1 e 9.65 6.86 2.54 10.29 8.13 BSC .380 .270 .100 .405 .320 BSC L L1 L2 L3 L4 14.61 2.29 1.02 1.27 0 15.88 2.79 1.40 1.78 0.38 .575 .090 .040 .050 0 .625 .110 .055 .070 .015 R 0.46 0.74 .018 .029 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 1 - Gate 3 - Emitter