© 2004 IXYS All rights reserved
G = Gate C = Collector
E = Emitter TAB = Collector
Symbol Test Conditions Maximum Ratings
VCES TJ= 25°C to 150°C 600 V
VCGR TJ= 25°C to 150°C; RGE = 1 MΩ600 V
VGES Continuous ±20 V
VGEM Transient ±30 V
IC25 TC= 25°C40A
IC110 TC= 110°C16A
ID110 TC= 110°C (IXG_16N60B2D1 diode) 11 A
ICM TC= 25°C, 1 ms 100 A
SSOA VGE= 15 V, TJ = 125°C, RG = 22 Ω ICM = 32 A
(RBSOA) Clamped inductive load @0.8 VCES
PCTC= 25°C 150 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
MdMounting torque (M3.5 screw) 0.55/5 Nm/lb.in.
Maximum lead temperature for soldering 300 °C
1.6 mm (0.062 in.) from case for 10 s
Maximum tab temperature 260 °C
soldering SMD devices for 10s
Weight TO-220 4 g
TO-263 2 g
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VGE(th) IC = 250 µA, VCE = VGE 2.5 5.0 V
ICES VCE = VCES 16N60B2 25 µA
VGE = 0 V 16N60B2D1 50 µA
IGES VCE = 0 V, VGE = ±20 V ±100 nA
VCE(sat) IC = 12A, VGE = 15 V 2.3 V
Note 2 TJ=125°C 1.8 V
Features
zInternational standard packages
zIGBT and anti-parallel FRED for
resonant power supplies
- Induction heating
- Rice cookers
zMOS Gate turn-on
- drive simplicity
zFast Recovery Expitaxial Diode (FRED)
- soft recovery with low IRM
Advantages
zSaves space (two devices in one
package)
zEasy to mount with 1 screw
zReduces assembly time and cost
DS99141A(3/04)
HiPerFASTTM IGBT
B2-Class High Speed IGBT
IXGA 16N60B2
IXGP 16N60B2
IXGA 16N60B2D1
IXGP 16N60B2D1
VCES = 600 V
IC25 =40A
VCE(sat) = 2.3 V
tfi(typ) =80ns
D1
TO-220 (IXGP)
GCE
C (TAB)
C (TAB)
G
E
TO-263 (IXGA)
Advance Technical Information
IXYS reserves the right to change limits, test conditions, and dimensions.
IXGP 16N60B2 IXGA 16N60B2D1
IXGA 16N60B2 IXGA 16N60B2D1
Reverse Diode (FRED) Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
VFIF = 10 A, VGE = 0 V 2.66 V
TJ = 125 °C 1.66 V
IRM IF = 12 A; -diF/dt = 100 A/µs, VR = 100 V 2.5 A
trr VGE = 0 V; TJ = 125 °C 110 ns
trr IF = 1 A; -diF/dt = 100 A/µs; VR = 30 V, VGE = 0 V 30 ns
RthJC 2.5 K/W
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs IC= 12A; VCE = 10 V, 8 12 S
Note 2.
Cies VCE = 25 V, VGE = 0 V, f = 1 MHz 780 pF
Coes 16N620B2 55 pF
16N60B2D1 65 pF
Cres 19 pF
Qg IC = 20A, VGE = 15 V, VCE = 0.5 VCES 32 nC
Qge 6nC
Qgc 10 nC
td(on) 25 ns
tri 15 ns
td(off) 70 150 ns
tfi 80 150 ns
Eoff 150 260 µJ
td(on) 25 ns
tri 18 ns
Eon (16N60B2) 0.35 mJ
td(off) 110 ns
tfi 170 ns
Eoff 350 µJ
RthJC 0.83 K/W
RthCK (IXGP) 0.5 K/W
Inductive load, TJ = 125°°
°°
°C
IC = 12A; VGE = 15 V
VCE = 400 V; RG = Roff = 22 Ω
Note 1
Inductive load, TJ = 25°°
°°
°C
IC = 12 A; VGE = 15 V
VCE = 400 V; RG = Roff = 22 Ω
Note 1.
Notes: 1. Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or
increased RG.
2. Pulse test, t < 300 µs, duty cycle d < 2 %
TO-220 Outline
TO-263 Outline
Pins: 1 - Gate
3 - Emitter
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.06 4.83 .160 .190
A1 2.03 2.79 .080 .110
b 0.51 0.99 .020 .039
b2 1.14 1.40 .045 .055
c 0.46 0.74 .018 .029
c2 1.14 1.40 .045 .055
D 8.64 9.65 .340 .380
D1 7.11 8.13 .280 .320
E 9.65 10.29 .380 .405
E1 6.86 8.13 .270 .320
e 2.54 BSC .100 BSC
L 14.61 15.88 .575 .625
L1 2.29 2.79 .090 .110
L2 1.02 1.40 .040 .055
L3 1.27 1.78 .050 .070
L4 0 0.38 0 .015
R 0.46 0.74 .018 .029
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
